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Vishay Siliconix SQ2337CES-T1_GE3
- Part No.:
- SQ2337CES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2337CES-T1_GE3.pdf
- Description:
- MOSFET P-CH 80V 2.2A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,274
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Product details
Overview
SQ2337CES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -80 V drain-source voltage, 0.290 Ω RDS(on) at VGS = -10 V, and -2.2 A continuous drain current at TC = 25 °C. It serves as a high-side load switch or reverse-polarity protection device in 12 V/24 V automotive power rails.
For engineers reviewing the SQ2337CES-T1_GE3 datasheet, SQ2337CES-T1_GE3 pinout, SQ2337CES-T1_GE3 application, or SQ2337CES-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design guidance for automotive body electronics, infotainment power management, and ECU subsystems.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low gate charge (9.3 nC typical) and fast switching (td(on) = 8 ns, tf = 4 ns), enabling efficient PWM control in space-constrained automotive modules. Its -175 °C maximum junction temperature supports operation in under-hood environments with minimal derating.
The device integrates a robust body diode with 25 ns typical reverse recovery time and 30 nC Qrr, allowing reliable freewheeling in inductive loads such as solenoids and relays without external catch diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -80 V - Withstands transients up to ISO 7637-2 Pulse 5a (clamped to -80 V) in 24 V systems |
| RDS(on) @ VGS = -10 V | 0.290 Ω - Enables ≤ 1.4 W conduction loss at -1.2 A, suitable for thermally limited PCB layouts |
| ID (continuous, TC = 25 °C) | -2.2 A - Supports typical automotive sensor or LED driver loads without heatsinking |
| Qg (total gate charge) | 9.3 nC typical - Reduces gate drive power and enables use with low-current MCU GPIOs |
| TJ max | +175 °C - Meets AEC-Q101 requirement for extended temperature operation in engine bay modules |
| EAS | 6 mJ - Absorbs inductive energy from 12 V solenoid coils without avalanche failure |
| RthJA | 166 °C/W - Validated on 1" × 1" FR-4 PCB; defines thermal margin for surface-mount-only designs |
Pinout & Package
SOT-23 (TO-236) package: 3-pin, surface-mount, lead (Pb)-free and halogen-free, footprint per Vishay Doc. 71196 (D = 2.80–3.04 mm, E = 2.10–2.64 mm, e = 0.95 mm BSC).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires -10 V to fully enhance; threshold range -1.5 V to -2.5 V ensures noise immunity in automotive 12 V systems |
| 2 | Source (S) | Common reference node; tied to system ground or battery positive in high-side configuration |
| 3 | Drain (D) | Power output terminal; connects to load; exposed drain pad provides thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including temperature cycling, HTRB, and UHAST per Rev. A test plan |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® technology | Delivers lower RDS(on) × Qg figure-of-merit than planar P-channel MOSFETs of same size |
| Body diode with low Qrr | 30 nC reverse recovery charge minimizes switching losses and EMI in relay/solenoid drivers |
| 175 °C junction rating | Enables direct mounting near heat sources (e.g., motor drivers) without thermal derating penalties |
Applications
| Automotive Door Module | Infotainment Power Sequencing |
|---|---|
|
Use Scenario: Controlling window lift motor direction and lock actuator enable signals in centralized door ECUs. IC Role / Device Role / Timing Role: High-side P-channel switch isolating 12 V supply to actuators during sleep mode. Use Value: Low RDS(on) limits voltage drop across SQ2337CES-T1_GE3 during active drive; AEC-Q101 qualification ensures reliability over 15-year vehicle life. |
Use Scenario: Enabling/disabling 5 V and 3.3 V rails for display, audio codec, and Bluetooth modules based on ignition state. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch managing power-up sequencing and standby leakage. Use Value: -80 V VDS withstands load dump transients; -175 °C TJ max supports operation behind dashboard in summer ambient. |
| Engine Control Unit (ECU) Sensor Bias | LED Headlamp Dimming Circuit |
|
Use Scenario: Providing regulated bias voltage to oxygen sensors and knock sensors requiring stable 12 V reference. IC Role / Device Role / Timing Role: Precision current-limited switch with integrated body diode for fault-tolerant bias delivery. Use Value: Tight VGS(th) distribution (-1.5 V to -2.5 V) ensures consistent turn-on across temperature; 6 mJ EAS handles sensor cable ESD events. |
Use Scenario: PWM-controlled dimming of daytime running lights (DRL) and position lamps using constant-current topology. IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET in high-side buck controller feedback path. Use Value: 9.3 nC Qg and 4 ns fall time support >20 kHz PWM without excessive gate drive loss; SOT-23 footprint saves board area in tight lamp housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011LFG-7 | RDS(on) = 0.22 Ω @ -4.5 V (lower gate drive voltage capability); Qg = 11.5 nC (higher switching loss) | Better suited for 3.3 V logic-level control; less ideal for 12 V gate drive due to higher RDS(on) at -10 V vs. SQ2337CES-T1_GE3 | Select when gate drive voltage is limited to ≤ -4.5 V and lower RDS(on) at low VGS is critical |
| AO3401 | RDS(on) = 0.085 Ω @ -4.5 V but only rated to -30 V VDS; not AEC-Q101 qualified | Acceptable for non-automotive consumer lighting or industrial controls where transient immunity and qualification are not required | Choose only for cost-sensitive, non-automotive applications with < -30 V system requirements |
Compared with DMN2011LFG-7 and AO3401, the SQ2337CES-T1_GE3 uniquely combines -80 V rating, AEC-Q101 qualification, and optimized RDS(on)/Qg balance for 12 V automotive power switching-making it irreplaceable in safety-critical or high-transient environments where alternatives lack either voltage headroom or automotive validation.
Availability
SQ2337CES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, infotainment power sequencing, and engine management systems requiring stable component supply across multi-year production cycles.
Supply support for SQ2337CES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ2337CES-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for robust, space-efficient power switching in harsh-temperature, high-transient automotive subsystems.
FAQ
What is the maximum continuous drain current rating for SQ2337CES-T1_GE3 at 125 °C case temperature?
The SQ2337CES-T1_GE3 supports -1.3 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained high-temperature operation. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C when operating near this limit. The SQ2337CES-T1_GE3 datasheet confirms this value is measured with standard 1" × 1" FR-4 mounting.
Is SQ2337CES-T1_GE3 suitable for reverse polarity protection in 24 V automotive systems?
Yes, the SQ2337CES-T1_GE3 is explicitly designed for reverse polarity protection in 12 V and 24 V automotive systems. Its -80 V VDS rating exceeds ISO 7637-2 Pulse 5a requirements (up to -75 V), and its -175 °C TJ max ensures functionality during hot-cranking events. The SQ2337CES-T1_GE3 body diode is rated for -3.7 A continuous source current, supporting fault-current handling during reverse connection.
Does SQ2337CES-T1_GE3 require a gate resistor for safe operation with a microcontroller GPIO?
A gate resistor is recommended for the SQ2337CES-T1_GE3 to dampen ringing and control dV/dt, especially in noisy automotive environments. While the SQ2337CES-T1_GE3 gate resistance is specified as 2.2–7 Ω, a 10–47 Ω series resistor between MCU GPIO and SQ2337CES-T1_GE3 gate improves EMI immunity and prevents shoot-through in half-bridge configurations. No pull-down is needed-the SQ2337CES-T1_GE3 gate threshold ensures default-off behavior.
What is the body diode forward voltage of SQ2337CES-T1_GE3 at -0.8 A and room temperature?
The SQ2337CES-T1_GE3 body diode exhibits a forward voltage of -0.8 V to -1.2 V at IF = -0.8 A and TA = 25 °C, as stated in the "Source-Drain Diode Ratings" section. This low VSD reduces conduction loss during freewheeling in inductive loads like fuel injectors or HVAC actuators. The SQ2337CES-T1_GE3 datasheet specifies this value is measured with VGS = 0 V, confirming intrinsic diode behavior without gate bias.
How does the SQ2337CES-T1_GE3 compare to N-channel alternatives in high-side switching applications?
The SQ2337CES-T1_GE3 eliminates the need for gate-boost circuitry required by N-channel MOSFETs in high-side roles, simplifying layout and reducing BOM count. Unlike N-channel solutions, the SQ2337CES-T1_GE3 operates directly from 12 V battery rail with no level-shifting-its -2.0 V typical VGS(th) ensures clean turn-on with standard automotive logic. This makes SQ2337CES-T1_GE3 preferable for compact, cost-sensitive modules where gate drive complexity must be minimized.
SQ2337CES-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 290mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 40 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2337CES-T1_GE3 FAQ
1.How can I place an order for SQ2337CES-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2337CES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2337CES-T1_GE3 reliable?
The price and inventory of SQ2337CES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2337CES-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ2337CES-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2337CES-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2337CES-T1_GE3?
SQ2337CES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2337CES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2337CES-T1_GE3?
For technical support, including SQ2337CES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2337CES-T1_GE3 requirements.
6.How does Aetrix verify that SQ2337CES-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2337CES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2337CES-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ2337CES-T1_GE3?
All SQ2337CES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2337CES-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2337CES-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ2337CES-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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