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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2337ES-T1_GE3

Name: SQ2337ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2337ES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2337ES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2337ES-T1_GE3.pdf

Description:: MOSFET P-CH 80V 2.2A SOT23-3

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Product details

Overview

SQ2337ES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET with -80 V V_DS, 0.290 Ω R_DS(on) at -10 V V_GS, and -2.2 A continuous drain current at T_C = 25 °C, housed in a SOT-23 package and qualified to AEC-Q101 for under-hood power control applications.

For engineers reviewing the SQ2337ES-T1_GE3 datasheet, SQ2337ES-T1_GE3 pinout, SQ2337ES-T1_GE3 application, or SQ2337ES-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, junction-to-foot resistance (50 °C/W), gate charge (11.5 nC typ.), and automotive reliability validation per AEC-Q101.

Technical Context

This P-channel MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with 5 ns turn-on delay and 10 ns rise time at -40 V V_DS. It supports bidirectional blocking up to -80 V and features integrated body diode with -0.8 V forward voltage at -0.8 A.

Designed for high-temperature operation, it maintains stable threshold voltage (-1.5 to -2.5 V) across -55 to +175 °C junction range and exhibits normalized R_DS(on) drift of ≤2.5× from 25 °C to 150 °C, enabling robust load switching in engine control units and battery management systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-80 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 24 V automotive systems with load dump transients.
R_DS(on) @ -10 V	0.290 Ω - On-resistance at rated gate drive; determines conduction loss of ~0.7 W at -1.2 A DC load current.
I_D (cont.)	-2.2 A @ T_C = 25 °C - Continuous current capability with PCB heatsinking; derates to -1.3 A at 125 °C case temperature.
Q_g	11.5 nC (typ.) - Total gate charge; sets minimum driver strength requirement for <10 ns switching transitions.
R_thJF	50 °C/W - Junction-to-foot thermal resistance; enables direct thermal path to copper pour or metal-core PCB for high-reliability mounting.
E_AS	6 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching in relay drivers and solenoid controls.
V_GS(th)	-1.5 to -2.5 V - Gate threshold range; ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers when used with pull-up biasing.

Pinout & Package

SOT-23 (TO-236) surface-mount plastic package with 3 leads, 1.02 mm max height, and 2.64 mm × 1.40 mm footprint; optimized for automated placement and reflow soldering on FR-4 PCBs with recommended pad dimensions per Vishay Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting negative V_GS; requires external pull-up resistor for high-side switch operation.
2 (S)	Source	Reference node for gate drive and current return path; connected to system ground or positive rail depending on topology.
3 (D)	Drain	Power output terminal; electrically tied to internal die substrate and thermal foot for low-inductance heat transfer.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, HTRB, and UIS testing per Rev. C specification.
TrenchFET® architecture	Enables 0.241 Ω typical R_DS(on) at -10 V while maintaining <12 ns fall time for efficient PWM motor control.
100 % R_g and UIS tested	Each unit screened for gate resistance (2.2–7 Ω) and unclamped inductive switching integrity to prevent field failure.
Junction temperature range	Rated from -55 to +175 °C; supports operation in engine control modules without derating at ambient >125 °C.
Low C_iss/C_oss ratio	495 pF/40 pF typical - improves hard-switching efficiency and reduces EMI in DC-DC converter high-side switches.

Applications

Engine Control Unit (ECU) Load Switch	Automotive Body Control Module (BCM)
Use Scenario: Switching 12 V/24 V solenoids, fuel injectors, and HVAC actuators in engine bay environments. IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery with logic-level compatible gate drive. Use Value: -80 V V_DS withstands ISO 7637-2 pulse 5a load dump; 175 °C T_J rating ensures uninterrupted operation during extended idle-stop cycles.	Use Scenario: Managing interior lighting, window lift motors, and door lock actuators in distributed BCM nodes. IC Role / Device Role / Timing Role: Low-power load switch with integrated body diode for reverse polarity protection and freewheeling. Use Value: 0.290 Ω R_DS(on) limits I²R heating to <1 W at 1.8 A peak; SOT-23 footprint enables compact multi-channel PCB layouts.
Battery Disconnect Switch	Start-Stop System Auxiliary Power Control
Use Scenario: Isolating auxiliary battery banks or backup power rails during vehicle shutdown or fault conditions. IC Role / Device Role / Timing Role: Bidirectional blocking switch with low leakage (<1 μA IDSS at -80 V) for long-term storage safety. Use Value: -50 μA IDSS at 125 °C ensures <10 μA total standby current across 10 parallel channels, meeting OEM quiescent current targets.	Use Scenario: Controlling power to infotainment, ADAS sensors, and telematics modules during engine cranking events. IC Role / Device Role / Timing Role: Fast-turning P-channel switch synchronized with crank detection to maintain clean supply sequencing. Use Value: 5 ns t_d(on) and 8 ns t_f enable sub-100 ns response to crank signal, preventing brownout-induced resets in critical subsystems.

Engine Control Unit (ECU) Load Switch

Automotive Body Control Module (BCM)

Use Scenario: Switching 12 V/24 V solenoids, fuel injectors, and HVAC actuators in engine bay environments.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling power delivery with logic-level compatible gate drive.

Use Value: -80 V V_DS withstands ISO 7637-2 pulse 5a load dump; 175 °C T_J rating ensures uninterrupted operation during extended idle-stop cycles.

Use Scenario: Managing interior lighting, window lift motors, and door lock actuators in distributed BCM nodes.

IC Role / Device Role / Timing Role: Low-power load switch with integrated body diode for reverse polarity protection and freewheeling.

Use Value: 0.290 Ω R_DS(on) limits I²R heating to <1 W at 1.8 A peak; SOT-23 footprint enables compact multi-channel PCB layouts.

Battery Disconnect Switch

Start-Stop System Auxiliary Power Control

Use Scenario: Isolating auxiliary battery banks or backup power rails during vehicle shutdown or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional blocking switch with low leakage (<1 μA IDSS at -80 V) for long-term storage safety.

Use Value: -50 μA IDSS at 125 °C ensures <10 μA total standby current across 10 parallel channels, meeting OEM quiescent current targets.

Use Scenario: Controlling power to infotainment, ADAS sensors, and telematics modules during engine cranking events.

IC Role / Device Role / Timing Role: Fast-turning P-channel switch synchronized with crank detection to maintain clean supply sequencing.

Use Value: 5 ns t_d(on) and 8 ns t_f enable sub-100 ns response to crank signal, preventing brownout-induced resets in critical subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LFG-7	-20 V V_DS, 0.045 Ω R_DS(on) @ -4.5 V, SOT-23 package	Limited to 12 V systems; unsuitable for 24 V load dump or high-voltage transients	Select only for low-voltage interior modules where -20 V rating suffices and lower R_DS(on) justifies cost premium.
SI2301DS-T1-BE3	-20 V V_DS, 0.115 Ω R_DS(on) @ -4.5 V, SOT-23 package	No AEC-Q101 qualification; lacks UIS and HTRB validation for automotive deployment	Acceptable for non-automotive industrial or consumer applications requiring cost-sensitive P-channel switching.

Compared with DMN2053LFG-7 and SI2301DS-T1-BE3, SQ2337ES-T1_GE3 uniquely combines -80 V rating, AEC-Q101 compliance, and 175 °C operation-making it the only option among the three qualified for under-hood 24 V systems with transient immunity and extended temperature life.

Availability

SQ2337ES-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, battery management, and start-stop system designs requiring stable component supply across extended production lifecycles.

Supply support for SQ2337ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SQ2337ES-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET product line, engineered specifically for high-temperature, high-transient-load switching in engine control, chassis, and powertrain systems.

FAQ

What is the maximum junction temperature rating for SQ2337ES-T1_GE3?

The SQ2337ES-T1_GE3 has a maximum junction temperature rating of +175 °C, validated per AEC-Q101 stress testing. This allows uninterrupted operation in under-hood environments where ambient temperatures exceed 125 °C, and ensures long-term reliability in engine control units and transmission control modules where thermal margins are constrained.

Is SQ2337ES-T1_GE3 qualified to AEC-Q101 standards?

Yes, SQ2337ES-T1_GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet revision C. It undergoes 100 % R_g and UIS testing, along with temperature cycling, high-temperature reverse bias (HTRB), and accelerated moisture resistance testing to meet automotive reliability requirements for passenger and commercial vehicles.

What is the typical gate charge value for SQ2337ES-T1_GE3?

The typical total gate charge (Q_g) for SQ2337ES-T1_GE3 is 11.5 nC at V_GS = -10 V and V_DS = -40 V. This value directly impacts driver selection and switching loss; for example, driving Q_g with a 1 Ω gate resistor yields ~12 ns effective gate delay, supporting PWM frequencies up to 2 MHz in low-duty-cycle applications.

Can SQ2337ES-T1_GE3 be used in high-side switch configurations?

Yes, SQ2337ES-T1_GE3 is designed for high-side switching in P-channel topology. Its -80 V V_DS, -2.5 V maximum V_GS(th), and SOT-23 drain-connected thermal foot allow direct integration into 12 V/24 V rail monitoring circuits with external pull-up biasing-common in battery disconnect and pre-charge control stages.

What is the R_DS(on) value of SQ2337ES-T1_GE3 at V_GS = -6 V?

The R_DS(on) of SQ2337ES-T1_GE3 is 0.314 Ω maximum at V_GS = -6 V and I_D = -1.1 A. This makes it compatible with 5 V microcontroller GPIOs or level-shifted logic drivers, delivering predictable conduction loss (~0.38 W) without requiring dedicated -10 V gate supplies in space-constrained automotive modules.

SQ2337ES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2337ES-T1_GE3 FAQ

1.How can I place an order for SQ2337ES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2337ES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2337ES-T1_GE3 reliable?

The price and inventory of SQ2337ES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2337ES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2337ES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2337ES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2337ES-T1_GE3?

SQ2337ES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2337ES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2337ES-T1_GE3?

For technical support, including SQ2337ES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2337ES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2337ES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2337ES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2337ES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2337ES-T1_GE3?

All SQ2337ES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2337ES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2337ES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2337ES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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