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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2348ES-T1_BE3

Name: SQ2348ES-T1_BE3
Brand: Vishay Siliconix
SKU: SQ2348ES-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2348ES-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2348ES-T1_BE3.pdf

Description:: MOSFET N-CH 30V 8A SOT23-3

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Product details

Overview

SQ2348ES-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 8 A continuous drain current at 25 °C, and 0.024 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in engine control units and body electronics.

For engineers reviewing the SQ2348ES-T1_BE3 datasheet, SQ2348ES-T1_BE3 pinout, SQ2348ES-T1_BE3 application, or SQ2348ES-T1_BE3 equivalent, key selection criteria include its 175 °C rated junction temperature, 100 % R_g and UIS tested reliability, SOT-23 footprint compatibility with space-constrained PCB layouts, and verified performance under pulsed avalanche stress (E_AS = 12 mJ).

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Q_g = 7.95–14.5 nC) and low Crss (40–50 pF) support efficient PWM operation in DC-DC converters and load switches, while the integrated body diode (V_SD = 0.8–1.2 V at 3.5 A) enables synchronous rectification and freewheeling functions.

The device is characterized across -55 °C to +175 °C and features guaranteed R_DS(on) stability up to 175 °C (0.042 Ω max at V_GS = 10 V, I_D = 12 A), validated thermal resistance (R_thJA = 166 °C/W on 1"² FR4 PCB), and robust avalanche capability (I_AS = 15.5 A, E_AS = 12 mJ) per single-pulse test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive systems and 12 V battery rails.
R_DS(on) @ V_GS = 10 V	0.024 Ω - Enables <192 mW conduction loss at 8 A, reducing thermal load in compact SOT-23 packages.
R_DS(on) @ V_GS = 4.5 V	0.032 Ω - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers without external level shifting.
I_D (continuous, T_C = 25 °C)	8 A - Supports high-current loads such as fuel injectors, solenoids, and LED matrix drivers in automotive modules.
E_AS	12 mJ - Withstands inductive energy spikes during switch-off in relay or motor drive circuits without failure.
T_J max	+175 °C - Certified for under-hood environments including engine control units and transmission control modules.
Q_g	7.95–14.5 nC - Low total gate charge enables fast switching with minimal driver power consumption.

Pinout & Package

SOT-23 (TO-236) package: 3-pin surface-mount, 2.80 × 2.10 × 1.12 mm body, lead (Pb)-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal accepting 0–20 V gate-source voltage; requires ≤27 Ω gate resistance to limit ringing and ensure stable turn-on/turn-off timing.
2	Source (S)	Reference node for gate drive and current return path; tied to system ground or low-side shunt in high-side configurations.
3	Drain (D)	High-current output terminal connected to load; thermally coupled to PCB copper via exposed drain pad for enhanced heat dissipation.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD, enabling deployment in safety-critical ECUs without additional qualification effort.
100 % R_g and UIS testing	Each unit undergoes production screening for gate resistance consistency and unclamped inductive switching robustness-critical for field reliability in noisy automotive environments.
TrenchFET® technology	Delivers lower R_DS(on) per die area than planar MOSFETs, allowing higher current density in SOT-23 without derating beyond datasheet limits.
175 °C junction rating	Enables operation in high-ambient zones (e.g., near exhaust manifolds or power inverters) where standard 150 °C parts would require thermal derating or heatsinking.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive Body Control Module (BCM) Load Switch
Use Scenario: Driving 12 V solenoid-type fuel injectors in gasoline direct injection systems with PWM duty cycles up to 80 %. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling injector coil current with precise on/off timing and fast fall time (t_f = 6–9 ns). Use Value: Low R_DS(on) minimizes power loss during extended injection pulses; 175 °C rating ensures stable operation adjacent to hot engine components.	Use Scenario: Managing power distribution to door locks, window motors, and interior lighting in BCMs with centralized load protection. IC Role / Device Role / Timing Role: Protected load switch providing overcurrent and thermal shutdown via external controller feedback loop. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee resilience against load dump transients and inductive kickback from motor windings.
Start-Stop System Battery Management	LED Headlamp Matrix Driver
Use Scenario: Controlling auxiliary battery isolation and regenerative braking energy routing in 12 V start-stop architectures. IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting reverse conduction through integrated body diode during energy recovery phases. Use Value: Low V_SD (0.8–1.2 V) reduces forward conduction loss in freewheeling mode; high I_AS (15.5 A) withstands surge currents during cranking events.	Use Scenario: Pixel-level current switching for adaptive LED headlamps requiring rapid dimming and fault-tolerant operation. IC Role / Device Role / Timing Role: Low-latency, high-reliability power switch enabling microsecond-scale PWM dimming and short-circuit detection. Use Value: Fast switching (t_d(off) = 21–32 ns) supports >10 kHz PWM frequencies; SOT-23 footprint allows dense array layout with minimal trace inductance.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM) Load Switch

Use Scenario: Driving 12 V solenoid-type fuel injectors in gasoline direct injection systems with PWM duty cycles up to 80 %.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling injector coil current with precise on/off timing and fast fall time (t_f = 6–9 ns).

Use Value: Low R_DS(on) minimizes power loss during extended injection pulses; 175 °C rating ensures stable operation adjacent to hot engine components.

Use Scenario: Managing power distribution to door locks, window motors, and interior lighting in BCMs with centralized load protection.

IC Role / Device Role / Timing Role: Protected load switch providing overcurrent and thermal shutdown via external controller feedback loop.

Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee resilience against load dump transients and inductive kickback from motor windings.

Start-Stop System Battery Management

LED Headlamp Matrix Driver

Use Scenario: Controlling auxiliary battery isolation and regenerative braking energy routing in 12 V start-stop architectures.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch supporting reverse conduction through integrated body diode during energy recovery phases.

Use Value: Low V_SD (0.8–1.2 V) reduces forward conduction loss in freewheeling mode; high I_AS (15.5 A) withstands surge currents during cranking events.

Use Scenario: Pixel-level current switching for adaptive LED headlamps requiring rapid dimming and fault-tolerant operation.

IC Role / Device Role / Timing Role: Low-latency, high-reliability power switch enabling microsecond-scale PWM dimming and short-circuit detection.

Use Value: Fast switching (t_d(off) = 21–32 ns) supports >10 kHz PWM frequencies; SOT-23 footprint allows dense array layout with minimal trace inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3028LSD-13	R_DS(on) = 0.028 Ω @ 10 V, SOT-23-3, AEC-Q101 qualified, but rated only to 150 °C TJ.	Limited to cabin-mounted modules; not suitable for under-hood placement above 150 °C ambient.	Select when thermal budget permits lower junction temperature operation and cost sensitivity outweighs 175 °C requirement.
AO3400A	R_DS(on) = 0.028 Ω @ 10 V, SOT-23-3, industrial grade only (not AEC-Q101 qualified), no UIS or R_g screening.	Not approved for automotive safety-critical systems; requires full qualification by end customer.	Use only in non-automotive or prototype applications where AEC-Q101 compliance is not mandated.

Compared with DMN3028LSD-13 and AO3400A, SQ2348ES-T1_BE3 uniquely combines 175 °C operation, AEC-Q101 qualification, and 100 % UIS/R_g testing-making it the only drop-in solution for high-temperature automotive power switching without design revalidation.

Availability

SQ2348ES-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and start-stop battery management systems requiring stable component supply and long-term lifecycle assurance.

Supply support for SQ2348ES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ2348ES-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and powertrain electronics.

FAQ

What is the maximum gate-source voltage rating for SQ2348ES-T1_BE3?

The SQ2348ES-T1_BE3 has a maximum gate-source voltage (V_GS) rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. For robust operation, gate drive circuits should be clamped to ≤±15 V with transient suppression, especially in automotive environments subject to load dump and ISO 7637-2 pulses. This specification is confirmed in the Absolute Maximum Ratings table of Vishay document 63706.

Is SQ2348ES-T1_BE3 suitable for high-frequency PWM applications like LED dimming?

Yes, SQ2348ES-T1_BE3 supports high-frequency PWM applications such as LED headlamp dimming due to its fast switching characteristics: t_d(on) = 4.5–7 ns, t_r = 8–12 ns, t_d(off) = 21–32 ns, and t_f = 6–9 ns. Its low Crss (40–50 pF) and Q_gd (1.3 nC) minimize Miller effect, enabling clean transitions at >10 kHz. These values are measured per JEDEC-standard conditions in the datasheet.

Does SQ2348ES-T1_BE3 have an integrated body diode, and what is its forward voltage?

Yes, SQ2348ES-T1_BE3 includes an integrated source-drain body diode with a forward voltage (V_SD) of 0.8–1.2 V at I_F = 3.5 A and V_GS = 0 V. This diode supports freewheeling in inductive loads and reverse-current conduction in start-stop battery management. The parameter is specified in the "Source-Drain Diode Ratings" section of document 63706.

What is the thermal resistance from junction to ambient for SQ2348ES-T1_BE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SQ2348ES-T1_BE3 is 166 °C/W when mounted on a 1" square FR4 PCB (2 oz copper, double-sided). This value assumes standard SOT-23 land pattern per Vishay application note AN826 and is critical for calculating safe operating area and derating curves at elevated ambient temperatures.

How is SQ2348ES-T1_BE3 marked on the package, and what does the marking indicate?

SQ2348ES-T1_BE3 is marked with the code "8Vxxx" on the top surface of the SOT-23 package, where "xxx" denotes date code and lot traceability information. This marking aligns with Vishay's standard SOT-23 labeling per document 71196 and confirms authenticity and revision status (Rev. C, Nov 2021). The "8V" prefix identifies the SQ2348ES family within Vishay's automotive MOSFET series.

SQ2348ES-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2348ES-T1_BE3 FAQ

1.How can I place an order for SQ2348ES-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2348ES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2348ES-T1_BE3 reliable?

The price and inventory of SQ2348ES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2348ES-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ2348ES-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2348ES-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2348ES-T1_BE3?

SQ2348ES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2348ES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2348ES-T1_BE3?

For technical support, including SQ2348ES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2348ES-T1_BE3 requirements.

6.How does Aetrix verify that SQ2348ES-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ2348ES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2348ES-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ2348ES-T1_BE3?

All SQ2348ES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2348ES-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2348ES-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ2348ES-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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