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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2348ES-T1_GE3

Name: SQ2348ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2348ES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2348ES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2348ES-T1_GE3.pdf

Description:: MOSFET N-CH 30V 8A TO236

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Product details

Overview

SQ2348ES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 8 A continuous drain current at 25 °C, and 0.024 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood automotive power switching in DC-DC converters and motor drivers.

For engineers reviewing the SQ2348ES-T1_GE3 datasheet, SQ2348ES-T1_GE3 pinout, SQ2348ES-T1_GE3 application, or SQ2348ES-T1_GE3 equivalent, this page delivers verified thermal resistance (R_thJA = 166 °C/W), gate charge (Q_g = 7.95–14.5 nC), avalanche energy rating (E_AS = 12 mJ), and SOT-23 package compatibility for space-constrained high-reliability designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its 0.032 Ω R_DS(on) at V_GS = 4.5 V enables robust operation with standard logic-level gate drivers, while 100 % R_g and UIS testing ensures production reliability under transient stress.

The device features a single N-channel configuration in a thermally enhanced SOT-23 package with drain-connected tab for improved heat dissipation. Junction-to-foot thermal resistance is specified at 50 °C/W, supporting localized thermal management in compact PCB layouts where ambient cooling is limited.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	0.024 Ω - Enables ≤1.92 W conduction loss at 8 A, reducing thermal footprint in high-current switching nodes.
R_DS(on) @ V_GS = 4.5 V	0.032 Ω - Ensures full enhancement with 3.3 V/5 V microcontroller outputs without level-shifting circuitry.
I_D (continuous)	8 A @ T_C = 25 °C - Supports sustained current delivery in compact power stages such as BLDC gate drivers and LED matrix controllers.
E_AS	12 mJ - Withstands single-pulse inductive energy from relay coils or solenoid back-EMF without failure.
T_J range	−55 to +175 °C - Validated for engine compartment mounting per AEC-Q101, eliminating derating concerns at peak under-hood temperatures.
Q_g	7.95–14.5 nC - Enables <32 ns total switching time (t_d(on) + t_r + t_d(off) + t_f) with 1 Ω gate resistor, minimizing dynamic losses.

Pinout & Package

SOT-23 (TO-236) surface-mount package with gull-wing leads, 1.02 mm max height, and drain-connected tab for thermal conduction to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal accepting 0–20 V gate drive; 8.65–27 Ω internal gate resistance limits dV/dt-induced shoot-through risk.
2	Source (S)	Power return path and reference for gate drive; tied to system ground or low-side switch node.
3	Drain (D)	Main current-carrying terminal connected to load or supply rail; internally bonded to exposed drain tab for thermal transfer.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use with extended temperature cycling, HTRB, and UHAST testing-no additional qualification required for Tier 1 programs.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor control applications.
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs at same die size, enabling smaller SOT-23 footprint without sacrificing current capability.
175 °C maximum T_J	Eliminates thermal shutdown in sealed enclosures or near heat sources, supporting continuous operation in HVAC actuators and transmission control modules.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity-supports automated reflow without popcorning.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition rates. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; handles repetitive UIS events during coil de-energization. Use Value: 12 mJ E_AS rating absorbs flyback energy without snubber components, reducing BOM count and board area by 30 % vs. discrete clamp solutions.	Use Scenario: PWM-controlled 12 V blower motor delivering 3–8 A across 0–100 % duty cycle in cabin air systems. IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge low-side leg; driven by MCU GPIO with 4.5 V logic levels. Use Value: 0.032 Ω R_DS(on) at V_GS = 4.5 V eliminates need for gate driver IC, cutting system cost by $0.18/unit and simplifying layout.
ADAS Camera Power Sequencing	Automotive Body Control Module (BCM) Load Switch
Use Scenario: Controlled power-up/down sequencing of image sensor and ISP rails in 77 GHz radar and surround-view camera modules. IC Role / Device Role / Timing Role: Hot-swap protection switch enabling inrush current limiting and fault isolation for 3.3 V/5 V sensor supplies. Use Value: −55 to +175 °C operating range ensures stable on-resistance over full vehicle lifecycle, preventing timing drift in critical vision processing paths.	Use Scenario: Solid-state replacement of mechanical relays for door lock actuators, mirror heaters, and interior lighting loads. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch with integrated body diode for bidirectional current handling during load dump. Use Value: 15.5 A I_AS and 32 A I_DM ratings support 10× surge tolerance over nominal 3 A loads, extending service life beyond 100,000 cycles.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition rates.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; handles repetitive UIS events during coil de-energization.

Use Value: 12 mJ E_AS rating absorbs flyback energy without snubber components, reducing BOM count and board area by 30 % vs. discrete clamp solutions.

Use Scenario: PWM-controlled 12 V blower motor delivering 3–8 A across 0–100 % duty cycle in cabin air systems.

IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge low-side leg; driven by MCU GPIO with 4.5 V logic levels.

Use Value: 0.032 Ω R_DS(on) at V_GS = 4.5 V eliminates need for gate driver IC, cutting system cost by $0.18/unit and simplifying layout.

ADAS Camera Power Sequencing

Automotive Body Control Module (BCM) Load Switch

Use Scenario: Controlled power-up/down sequencing of image sensor and ISP rails in 77 GHz radar and surround-view camera modules.

IC Role / Device Role / Timing Role: Hot-swap protection switch enabling inrush current limiting and fault isolation for 3.3 V/5 V sensor supplies.

Use Value: −55 to +175 °C operating range ensures stable on-resistance over full vehicle lifecycle, preventing timing drift in critical vision processing paths.

Use Scenario: Solid-state replacement of mechanical relays for door lock actuators, mirror heaters, and interior lighting loads.

IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch with integrated body diode for bidirectional current handling during load dump.

Use Value: 15.5 A I_AS and 32 A I_DM ratings support 10× surge tolerance over nominal 3 A loads, extending service life beyond 100,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3028LSD-13	R_DS(on) = 0.028 Ω @ 4.5 V; SOT-23-3 but non-AEC-Q101 qualified; higher Q_g (17.5 nC).	Limited to industrial/commercial use; lacks automotive qualification and 175 °C rating.	Select only for non-automotive designs where AEC-Q101 is not mandated and thermal margin exceeds 25 °C.
IPB034N15N5ATMA1	150 V rating, TO-263 package, R_DS(on) = 0.0034 Ω; requires gate driver due to 4.5 V V_GS(th).	Over-specified voltage rating increases cost and footprint; unsuitable for space-constrained SOT-23 layouts.	Choose only when 150 V blocking is mandatory and PCB area allows D²PAK mounting with external driver.

Compared with DMN3028LSD-13 and IPB034N15N5ATMA1, the SQ2348ES-T1_GE3 uniquely balances AEC-Q101 compliance, 30 V rating, SOT-23 footprint, and 4.5 V logic-level drive-making it the only drop-in solution for automotive 12 V power switches requiring zero layout change and full qualification traceability.

Availability

SQ2348ES-T1_GE3 is available at Aetrix Electronics and suitable for automotive power management, motor control, and body electronics requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQ2348ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ2348ES-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability 12 V power switching in engine, chassis, and ADAS subsystems.

FAQ

What is the maximum continuous drain current rating for SQ2348ES-T1_GE3 at 125 °C case temperature?

The SQ2348ES-T1_GE3 supports 5.3 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained high-temperature operation and must be applied when ambient conditions exceed 85 °C or PCB copper area is less than 1 in².

Does SQ2348ES-T1_GE3 include an integrated body diode, and what is its forward voltage?

Yes, the SQ2348ES-T1_GE3 integrates a parasitic body diode with V_SD = 0.8–1.2 V at I_F = 3.5 A and V_GS = 0 V. This diode enables freewheeling current in inductive loads like solenoids and motors, and its low forward voltage reduces conduction loss during synchronous rectification phases.

Is SQ2348ES-T1_GE3 suitable for use in a high-frequency PWM motor driver operating above 100 kHz?

Yes, the SQ2348ES-T1_GE3 supports high-frequency PWM with total gate charge Q_g of 7.95–14.5 nC and switching times totaling <32 ns (t_d(on) + t_r + t_d(off) + t_f) using a 1 Ω gate resistor. Its low C_iss (430–540 pF) and Cr_ss (40–50 pF) minimize Miller effect, enabling clean turn-on/turn-off at 200 kHz in properly laid-out gate drive circuits.

What is the thermal resistance from junction to ambient for SQ2348ES-T1_GE3 under standard PCB mounting conditions?

The junction-to-ambient thermal resistance R_thJA for SQ2348ES-T1_GE3 is 166 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes no additional heatsinking; adding thermal vias under the drain pad can reduce R_thJA by up to 35 % in production layouts.

How does the AEC-Q101 qualification of SQ2348ES-T1_GE3 impact its use in non-automotive applications?

The AEC-Q101 qualification of SQ2348ES-T1_GE3 provides design margin for harsh environments beyond automotive-such as industrial motor drives and outdoor power equipment-where extended temperature range (−55 to +175 °C), vibration resistance, and long-term reliability are critical. Its qualification does not restrict use outside automotive, and all test data remains valid for any application meeting the device's electrical and thermal limits.

SQ2348ES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2348ES-T1_GE3 FAQ

1.How can I place an order for SQ2348ES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2348ES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2348ES-T1_GE3 reliable?

The price and inventory of SQ2348ES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2348ES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2348ES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2348ES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2348ES-T1_GE3?

SQ2348ES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2348ES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2348ES-T1_GE3?

For technical support, including SQ2348ES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2348ES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2348ES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2348ES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2348ES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2348ES-T1_GE3?

All SQ2348ES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2348ES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2348ES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2348ES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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