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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2351ES-T1_BE3

Name: SQ2351ES-T1_BE3
Brand: Vishay Siliconix
SKU: SQ2351ES-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2351ES-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2351ES-T1_BE3.pdf

Description:: MOSFET P-CH 20V 3.2A SOT23-3

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Product details

Overview

SQ2351ES-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -20 V drain-source voltage, 175 °C maximum junction temperature, and delivering R_DS(on) = 0.080 Ω (typ) at V_GS = -4.5 V with I_D = -2.4 A - used in low-side load switching for automotive body electronics including LED lighting control and power distribution modules.

For engineers reviewing the SQ2351ES-T1_BE3 datasheet, SQ2351ES-T1_BE3 pinout, SQ2351ES-T1_BE3 application, or SQ2351ES-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, -55 °C to +175 °C operating range, and validated thermal performance on FR4 PCBs - critical for under-hood and interior automotive power management designs.

Technical Context

This P-channel MOSFET employs TrenchFET® technology to achieve low gate charge (Q_g = 3.4 nC typ) and fast switching (t_d(on) = 20 ns typ, t_f = 8 ns typ), enabling efficient PWM-controlled load switching in space-constrained automotive modules. Its negative threshold voltage (V_GS(th) = -0.6 to -1.5 V) ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drive.

The device features integrated source-drain diode with V_SD = -0.8 to -1.2 V at I_F = -2 A and supports pulsed drain current up to -12.7 A (I_DM). Thermal design is supported by verified R_thJA = 175 °C/W (PCB mount) and R_thJF = 75 °C/W (junction-to-foot), enabling reliable operation in thermally demanding environments without heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = -4.5 V	0.080 Ω (typ) - Enables <190 mW conduction loss at 1.5 A, reducing thermal stress in compact PCB layouts.
I_D Continuous @ T_C = 25 °C	-3.2 A - Supports steady-state loads such as interior lighting, sensors, and small actuators without derating.
Q_g Total Gate Charge	3.4 nC (typ) - Low drive power requirement simplifies gate driver selection and reduces switching losses at 10–100 kHz PWM frequencies.
T_J Operating Range	-55 °C to +175 °C - Validated for under-hood placement and high-temperature cabin modules per AEC-Q101 stress testing.
V_GS(th)	-0.6 to -1.5 V - Ensures guaranteed turn-on with 3.3 V microcontroller GPIOs and eliminates need for level-shifting circuitry.
E_AS	1.8 mJ - Avalanche energy rating supports robustness against inductive kickback in relay/coil driving applications.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3-pin configuration: 1.5 mm × 2.9 mm footprint, 1.1 mm max height, and gull-wing leads optimized for automated assembly and thermal dissipation via PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting negative V_GS; requires no external pull-up due to P-channel logic polarity.
2 (S)	Source	Common reference node tied to system ground or positive rail depending on switch topology; connects to internal body diode anode.
3 (D)	Drain	Switched output node; connects to load (e.g., LED string or solenoid); body diode cathode referenced to this terminal.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - required for Tier-1 ECU and body control module qualification.
100 % R_g and UIS tested	Each unit undergoes gate resistance screening and unclamped inductive switching validation - ensures consistent switching behavior and ruggedness in real-world inductive loads.
TrenchFET® architecture	Enables lower R_DS(on) per die area and reduced Q_g/R_DS(on) ratio - improves efficiency in battery-powered and thermally constrained applications.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - meets global automotive OEM environmental compliance requirements.
Single-pulse avalanche rated	E_AS = 1.8 mJ enables safe operation during transient overvoltage events without external snubbers in relay replacement circuits.

Applications

Automotive LED Lighting Control	Body Control Module Power Distribution
Use Scenario: Switching 12 V LED headlamp or interior lighting strings in response to CAN/LIN commands. IC Role / Device Role / Timing Role: Low-side load switch controlling current path to LED anodes; operates in DC or PWM mode up to 100 kHz. Use Value: R_DS(on) ≤ 0.115 Ω minimizes voltage drop and heat generation, enabling direct mounting on small PCBs without heatsinks.	Use Scenario: Managing power to door lock actuators, window lift motors, or mirror heaters in centralized body controllers. IC Role / Device Role / Timing Role: High-reliability P-channel switch replacing mechanical relays; driven by microcontroller GPIO with active-low logic. Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure uninterrupted operation in hot under-dash environments over 15-year vehicle lifetimes.
Engine Bay Sensor Power Gating	Start-Stop System Load Management
Use Scenario: Enabling/disabling pressure, temperature, or position sensors located near engine block or exhaust manifold. IC Role / Device Role / Timing Role: Precision power switch isolating sensor supply rails during sleep mode to reduce quiescent current. Use Value: V_GS(th) range (-0.6 to -1.5 V) guarantees turn-on with 3.3 V MCU outputs, eliminating level shifters and saving board space.	Use Scenario: Controlling auxiliary loads (e.g., HVAC blower, infotainment) during engine restart cycles in 12 V start-stop systems. IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET handling repeated 10–50 ms on/off transitions synchronized with crank detection. Use Value: t_f = 8 ns (typ) and low Q_g enable clean edge transitions and minimal shoot-through risk during rapid cycling.

Automotive LED Lighting Control

Body Control Module Power Distribution

Use Scenario: Switching 12 V LED headlamp or interior lighting strings in response to CAN/LIN commands.

IC Role / Device Role / Timing Role: Low-side load switch controlling current path to LED anodes; operates in DC or PWM mode up to 100 kHz.

Use Value: R_DS(on) ≤ 0.115 Ω minimizes voltage drop and heat generation, enabling direct mounting on small PCBs without heatsinks.

Use Scenario: Managing power to door lock actuators, window lift motors, or mirror heaters in centralized body controllers.

IC Role / Device Role / Timing Role: High-reliability P-channel switch replacing mechanical relays; driven by microcontroller GPIO with active-low logic.

Use Value: AEC-Q101 qualification and 175 °C T_J rating ensure uninterrupted operation in hot under-dash environments over 15-year vehicle lifetimes.

Engine Bay Sensor Power Gating

Start-Stop System Load Management

Use Scenario: Enabling/disabling pressure, temperature, or position sensors located near engine block or exhaust manifold.

IC Role / Device Role / Timing Role: Precision power switch isolating sensor supply rails during sleep mode to reduce quiescent current.

Use Value: V_GS(th) range (-0.6 to -1.5 V) guarantees turn-on with 3.3 V MCU outputs, eliminating level shifters and saving board space.

Use Scenario: Controlling auxiliary loads (e.g., HVAC blower, infotainment) during engine restart cycles in 12 V start-stop systems.

IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET handling repeated 10–50 ms on/off transitions synchronized with crank detection.

Use Value: t_f = 8 ns (typ) and low Q_g enable clean edge transitions and minimal shoot-through risk during rapid cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011LFG-7	R_DS(on) = 0.125 Ω @ -4.5 V; SOT-23 package; AEC-Q101 qualified; higher R_DS(on) and Q_g = 4.5 nC.	Marginally higher conduction loss; suitable where thermal margin exists but identical layout compatibility required.	Select when existing PCB layout must be preserved and slight efficiency trade-off is acceptable.
AO3401A	R_DS(on) = 0.085 Ω @ -4.5 V; SOT-23; not AEC-Q101 qualified; R_thJA = 200 °C/W (higher thermal resistance).	Limited to non-safety-critical interior applications; unsuitable for under-hood or long-life automotive deployments.	Consider only for cost-sensitive consumer or industrial prototypes lacking automotive qualification requirements.

Compared with DMN2011LFG-7 and AO3401A, SQ2351ES-T1_BE3 delivers superior thermal performance (R_thJA = 175 °C/W), tighter V_GS(th) distribution, and full AEC-Q101 validation - making it the preferred choice for production automotive modules requiring zero-defect reliability and extended temperature operation.

Availability

SQ2351ES-T1_BE3 is available at Aetrix Electronics and suitable for automotive LED lighting control, body control module power distribution, and engine bay sensor power gating requiring stable component supply across multi-year production programs.

Supply support for SQ2351ES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ2351ES-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for robust, space-efficient power switching in harsh-temperature vehicle subsystems.

FAQ

What is the maximum continuous drain current for SQ2351ES-T1_BE3 at 125 °C case temperature?

The maximum continuous drain current for SQ2351ES-T1_BE3 is -1.8 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained high-temperature operation and must be applied in thermal design calculations for automotive under-hood applications where ambient temperatures exceed 85 °C.

Is SQ2351ES-T1_BE3 suitable for reverse polarity protection circuits?

Yes, SQ2351ES-T1_BE3 is commonly used in reverse polarity protection due to its P-channel configuration, -20 V V_DS, and low R_DS(on). When placed in the high-side position with source connected to input and drain to load, it blocks reverse voltage while conducting forward current with minimal drop - validated in Vishay Application Note AN826 for automotive power rail protection.

Does SQ2351ES-T1_BE3 require a gate resistor for typical automotive MCU drive?

No external gate resistor is required for basic on/off switching with standard 3.3 V or 5 V automotive MCUs, as SQ2351ES-T1_BE3 has low input capacitance (C_iss = 265 pF typ) and gate threshold compatible with logic levels. However, a 10–47 Ω series resistor is recommended to damp ringing and control dV/dt in high-noise environments or when driving inductive loads.

What is the avalanche energy rating of SQ2351ES-T1_BE3 and how is it validated?

SQ2351ES-T1_BE3 is rated for single-pulse avalanche energy E_AS = 1.8 mJ at I_AS = -6 A and L = 0.1 mH, as measured per JEDEC JESD24-1. This rating is confirmed through 100 % UIS testing on every production lot, ensuring each device can safely absorb inductive energy spikes without failure in relay-coil or solenoid driving applications.

How does the thermal resistance R_thJA of SQ2351ES-T1_BE3 compare between PCB mount and junction-to-foot measurements?

SQ2351ES-T1_BE3 has R_thJA = 175 °C/W for PCB-mounted conditions (1" × 1" FR4, 2 oz Cu) and R_thJF = 75 °C/W (junction-to-foot). The lower R_thJF indicates efficient heat transfer from die to drain pad, enabling enhanced thermal performance when the drain is connected to large copper areas - a key advantage over alternatives with higher junction-to-ambient resistance.

SQ2351ES-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 330 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2351ES-T1_BE3 FAQ

1.How can I place an order for SQ2351ES-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2351ES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2351ES-T1_BE3 reliable?

The price and inventory of SQ2351ES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2351ES-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ2351ES-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2351ES-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2351ES-T1_BE3?

SQ2351ES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2351ES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2351ES-T1_BE3?

For technical support, including SQ2351ES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2351ES-T1_BE3 requirements.

6.How does Aetrix verify that SQ2351ES-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ2351ES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2351ES-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ2351ES-T1_BE3?

All SQ2351ES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2351ES-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2351ES-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ2351ES-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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