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Vishay Siliconix SQ2351ES-T1_GE3
- Part No.:
- SQ2351ES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2351ES-T1_GE3.pdf
- Description:
- MOSFET P-CH 20V 3.2A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:14,514
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Product details
Overview
SQ2351ES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -20 V VDS, 0.115 Ω RDS(on) at VGS = -4.5 V, and -3.2 A continuous drain current at TC = 25 °C. It serves as a low-side load switch in 12 V automotive power rails, including body control modules and LED lighting drivers.
For engineers reviewing the SQ2351ES-T1_GE3 datasheet, SQ2351ES-T1_GE3 pinout, SQ2351ES-T1_GE3 application, or SQ2351ES-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, -1.0 V typical gate threshold voltage, and 100 % Rg and UIS tested reliability assurance.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with controlled gate charge (Qg = 3.4 nC typ). Its negative gate threshold (-0.6 to -1.5 V) enables direct interface with standard 3.3 V/5 V logic controllers without level shifting.
The device features integrated source-drain diode with VSD = -0.8 V typ at -2 A, supports pulsed drain currents up to -12.7 A, and delivers 1.8 mJ single-pulse avalanche energy - critical for inductive load switching in automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Withstands reverse battery and load dump transients in 12 V automotive systems |
| RDS(on) @ VGS = -4.5 V | 0.080 Ω typ / 0.115 Ω max - Enables <100 mW conduction loss at 3.2 A, reducing thermal stress |
| ID (continuous) | -3.2 A @ TC = 25 °C - Supports medium-power loads such as HVAC actuators and mirror heaters |
| TJ max | +175 °C - Qualified for under-hood applications per AEC-Q101, enabling placement near heat sources |
| Qg | 3.4 nC typ - Reduces gate drive power and enables efficient PWM operation up to 100 kHz |
| VGS(th) | -1.0 V typ - Ensures reliable turn-on with 3.3 V microcontroller GPIOs without external biasing |
| RthJA | 175 °C/W - Requires minimal PCB copper area (1"² FR4) for thermal management in space-constrained modules |
Pinout & Package
SOT-23 (TO-236) package: 3-pin surface-mount, 2.8 mm × 2.1 mm footprint, 1.12 mm max height, lead (Pb)-free and halogen-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts -4.5 V logic-level drive; 2.8–14.4 Ω gate resistance affects switching speed |
| 2 (S) | Source | Reference node for gate drive; connected to system ground or high-side return path in high-side configurations |
| 3 (D) | Drain | Power output terminal; connects to load; internally tied to exposed drain pad for thermal conduction in SOT-23 |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and ESD testing per Rev. F spec |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® technology | Enables lower RDS(on) vs. planar MOSFETs at same die size, improving power density |
| 175 °C TJ operation | Supports placement in engine bay or near power converters without derating below 125 °C ambient |
| Low Qgd/Qg ratio | 0.32 typ (1.1/3.4 nC) - Minimizes Miller effect, enabling stable switching with moderate gate drive strength |
Applications
| Automotive Body Control Module | LED Headlamp Dimming Circuit |
|---|---|
Use Scenario: Switching 12 V power to door lock actuators and window lift motors in BCM subassemblies. IC Role / Device Role / Timing Role: Low-side load switch controlling inductive loads with flyback protection via internal body diode. Use Value: -1.0 V VGS(th) ensures full enhancement using 3.3 V MCU outputs; 175 °C rating allows integration into sealed BCM housings. |
Use Scenario: PWM dimming of high-brightness LED strings in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Synchronous low-side switch operating at 1–20 kHz, leveraging fast tf = 8 ns typ for precise duty-cycle control. Use Value: 0.080 Ω RDS(on) limits I²R loss to <100 mW at 3.2 A, minimizing thermal impact on adjacent optical components. |
| Engine Control Unit Power Management | Automotive HVAC Blower Motor Driver |
Use Scenario: Isolating auxiliary 12 V supplies for sensor interfaces and CAN transceivers during key-off sleep mode. IC Role / Device Role / Timing Role: Always-on load switch with ultra-low IDSS = -1 μA max at -20 V, preserving battery life. Use Value: -55 to +175 °C operating range supports placement directly on ECU PCB near microcontroller and power regulators. |
Use Scenario: Controlling DC blower motor current in climate control systems with overcurrent and thermal shutdown requirements. IC Role / Device Role / Timing Role: Protected power switch handling pulsed currents up to -12.7 A during motor startup surges. Use Value: 1.8 mJ EAS rating absorbs inductive kickback without external snubbers, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 0.125 Ω min at -4.5 V; SOT-23-3 but not AEC-Q101 qualified | Lacks automotive qualification; suitable only for industrial or consumer designs | Select when AEC-Q101 is not required and cost sensitivity outweighs qualification needs |
| AO3401 | RDS(on) = 0.085 Ω typ at -4.5 V; 150 °C TJ max; no UIS or Rg testing | Lower thermal capability and unverified avalanche robustness limit use in harsh automotive environments | Prefer for non-automotive 12 V load switching where 175 °C operation is unnecessary |
Compared with DMN2020LSD-13 and AO3401, SQ2351ES-T1_GE3 provides verified AEC-Q101 compliance, 175 °C operation, and production-tested UIS performance - making it the only option qualified for under-hood deployment without additional system-level derating or validation.
Availability
SQ2351ES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, and engine management systems requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQ2351ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SQ2351ES-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for space-constrained, thermally demanding 12 V vehicle subsystems.
FAQ
What is the gate threshold voltage range for SQ2351ES-T1_GE3?
The SQ2351ES-T1_GE3 has a gate-source threshold voltage (VGS(th)) range of -0.6 V minimum to -1.5 V maximum, with -1.0 V typical at ID = -250 μA. This ensures reliable turn-on with 3.3 V logic while maintaining noise immunity in automotive electrical environments. The SQ2351ES-T1_GE3 maintains this specification across its full -55 °C to +175 °C operating junction temperature range.
Is SQ2351ES-T1_GE3 suitable for high-side switching configurations?
Yes, SQ2351ES-T1_GE3 can be used in high-side switching when paired with appropriate gate driving circuitry capable of pulling the gate to within 4.5 V of the source potential. Its -20 V VDS rating and -12.7 A pulsed current capability make it viable for 12 V rail isolation, though external level-shifting or charge-pump gate drivers are required. The SQ2351ES-T1_GE3 datasheet confirms operation in both high-side and low-side topologies.
Does SQ2351ES-T1_GE3 include integrated ESD protection?
No, SQ2351ES-T1_GE3 does not integrate dedicated ESD protection structures beyond inherent MOSFET gate oxide robustness. It is rated for ±12 V gate-source voltage (VGS) and undergoes 100 % Rg testing, but external TVS or RC filtering is recommended for ISO 10605-compliant automotive board-level ESD protection. The SQ2351ES-T1_GE3 relies on system-level design for ESD survivability.
What is the thermal resistance from junction to ambient for SQ2351ES-T1_GE3?
The junction-to-ambient thermal resistance (RthJA) of SQ2351ES-T1_GE3 is 175 °C/W when mounted on a 1" square FR4 PCB with 2 oz copper on both sides. This value assumes standard SOT-23 land pattern per Vishay Application Note 826. The SQ2351ES-T1_GE3 achieves this performance without thermal vias or heatsinks, supporting compact automotive module designs.
How is SQ2351ES-T1_GE3 marked on the package?
The SQ2351ES-T1_GE3 is laser-marked with the code "8S" on the top surface of the SOT-23 package, per Vishay's standard marking convention for this device. This marking is visible under 20× magnification and aligns with the ordering information in document 79771. The SQ2351ES-T1_GE3 marking is consistent across all production lots and qualifies for traceability per IATF 16949 requirements.
SQ2351ES-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 330 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2351ES-T1_GE3 FAQ
1.How can I place an order for SQ2351ES-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2351ES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2351ES-T1_GE3 reliable?
The price and inventory of SQ2351ES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2351ES-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ2351ES-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2351ES-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2351ES-T1_GE3?
SQ2351ES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2351ES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2351ES-T1_GE3?
For technical support, including SQ2351ES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2351ES-T1_GE3 requirements.
6.How does Aetrix verify that SQ2351ES-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2351ES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2351ES-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ2351ES-T1_GE3?
All SQ2351ES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2351ES-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2351ES-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ2351ES-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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