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Vishay Siliconix SQ2360EES-T1-GE3
- Part No.:
- SQ2360EES-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2360EES-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 4.4A TO236
- Quantity:
- Payment:
- Shipping:
Inventory:9,552
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Product details
Overview
SQ2360EES-T1-GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 4 A continuous drain current at 25 °C, and 0.085 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and load switching in 12 V automotive systems.
For engineers reviewing the SQ2360EES-T1-GE3 datasheet, SQ2360EES-T1-GE3 pinout, SQ2360EES-T1-GE3 application, or SQ2360EES-T1-GE3 equivalent, key selection criteria include its SOT-23 package thermal performance (RthJA = 166 °C/W), 100 % Rg and UIS tested reliability, and gate threshold voltage range (1.5–2.5 V) enabling robust 3.3 V/5 V logic-level drive compatibility.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in space-constrained automotive modules. Its 0.081 Ω typical RDS(on) at VGS = 4.5 V supports efficient operation with standard microcontroller GPIOs, while 7.4 nC total gate charge enables high-frequency PWM control without excessive driver losses.
The device integrates a built-in body diode with 0.8–1.2 V forward voltage at 1.5 A and supports unclamped inductive switching (UIS) up to 1.8 mJ. Thermal design is guided by validated junction-to-foot (RthJF = 50 °C/W) and junction-to-ambient (166 °C/W on 1"² FR-4 PCB) resistance values.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 42 V automotive systems and transient surge protection. |
| RDS(on) @ VGS = 10 V | 0.085 Ω - Enables ≤0.34 W conduction loss at 4 A, critical for thermally limited SOT-23 footprint. |
| RDS(on) @ VGS = 4.5 V | 0.130 Ω - Ensures reliable turn-on with 3.3 V MCU outputs, reducing need for external level-shifting. |
| ID Continuous @ TC = 25 °C | 4 A - Supports medium-power loads like fuel pump drivers, HVAC actuators, and LED matrix controllers. |
| Qg Total Gate Charge | 7.4 nC - Allows <15 ns turn-on delay and <17 ns rise time with 1 Ω gate resistor, suitable for 100+ kHz PWM. |
| TJ Operating Range | −55 to +175 °C - Meets under-hood ambient requirements per AEC-Q101, enabling placement near engines or ECUs. |
| EAS Avalanche Energy | 1.8 mJ - Withstands inductive kickback from solenoids and motors without external snubbers in many designs. |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3-pin configuration: compact 2.8 mm × 2.1 mm footprint, 1.12 mm max height, and gull-wing leads for automated assembly and thermal relief via PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - G | Gate | Control terminal accepting 0–10 V logic signals; 1.24–3.68 Ω gate resistance limits ringing and EMI during switching. |
| 2 - S | Source | Reference node for gate drive and current return path; tied to system ground in low-side switch configurations. |
| 3 - D | Drain | High-side output node connected to load; internally bonded to exposed drain pad for enhanced thermal conduction to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards. |
| 100 % Rg and UIS Tested | Each unit undergoes production screening for gate resistance consistency and single-pulse avalanche ruggedness. |
| TrenchFET® Architecture | Delivers lower RDS(on) per die area than planar MOSFETs, enabling higher current density in SOT-23. |
| ESD Protection | 800 V HBM rating reduces risk of handling damage during board assembly and rework. |
| Drain-Source Diode | Integrated body diode with 1.2 V max VSD at 1.5 A supports freewheeling in inductive loads without external components. |
Applications
| Engine Control Module Load Switching | Automotive LED Headlamp Dimming |
|---|---|
Use Scenario: Switching 12 V solenoid valves and fuel injectors in engine management units where space and thermal margin are constrained. IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU PWM output, handling repetitive 4 A pulsed loads with minimal heatsinking. Use Value: 0.085 Ω RDS(on) limits power dissipation to <1.4 W at full load, allowing direct mounting on small PCB areas without thermal vias. | Use Scenario: PWM dimming of high-brightness LED arrays in adaptive headlamps requiring precise current regulation and fast response. IC Role / Device Role / Timing Role: High-frequency (≥20 kHz) synchronous rectifier and current sink in constant-current LED driver stages. Use Value: 7.4 nC Qg and 11 ns rise time enable clean switching edges, minimizing electromagnetic interference in safety-critical lighting systems. |
| Body Control Unit Window Lift Drivers | Start-Stop System Auxiliary Loads |
Use Scenario: Driving reversible DC motors for power window and sunroof actuators in body control modules with strict EMC and lifetime requirements. IC Role / Device Role / Timing Role: Bidirectional half-bridge switch (paired with complementary P-channel) managing motor direction and braking via H-bridge topology. Use Value: 175 °C maximum junction temperature ensures reliability during extended stall conditions and high ambient cabin temperatures. | Use Scenario: Managing auxiliary loads (e.g., HVAC blower, seat heaters) during engine stop phases in 12 V start-stop systems with frequent thermal cycling. IC Role / Device Role / Timing Role: High-reliability load switch activated by CAN/LIN gateway controller to isolate non-essential circuits during cranking. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee survival across >100,000 stop-start cycles with inductive load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | 30 V VDS, 0.032 Ω RDS(on) @ 10 V, SO-8 package | Lower voltage rating; larger footprint; higher current capability | Select when system voltage ≤24 V and PCB area allows SO-8; not suitable for 42 V transients or SOT-23 space constraints. |
| AO3400 | 30 V VDS, 0.042 Ω RDS(on) @ 10 V, SOT-23 package, no AEC-Q101 | Same footprint but lacks automotive qualification and high-temp validation | Acceptable for non-automotive industrial or consumer use; avoid in safety-critical or under-hood deployments. |
Compared with DMN3020LSD-13 and AO3400, SQ2360EES-T1-GE3 uniquely combines 60 V rating, AEC-Q101 compliance, and SOT-23 packaging-enabling drop-in replacement only in 60 V automotive designs where thermal and qualification requirements match exactly.
Availability
SQ2360EES-T1-GE3 is available at Aetrix Electronics and suitable for automotive engine control, LED lighting systems, and body electronics requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQ2360EES-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability and automotive-grade performance.
The SQ2360EES-T1-GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for space-constrained, high-temperature switching in 12 V/42 V vehicle subsystems where AEC-Q101 validation and robust UIS performance are mandatory.
FAQ
What is the maximum continuous drain current for SQ2360EES-T1-GE3 at 125 °C case temperature?
The SQ2360EES-T1-GE3 supports 2.3 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package and must be verified against actual PCB layout and ambient conditions. Designers should reference the Safe Operating Area (SOA) curve in the datasheet to confirm pulse operation limits beyond this DC value. The SQ2360EES-T1-GE3 maintains stable RDS(on) up to 175 °C junction temperature, supporting short-term overloads.
Is SQ2360EES-T1-GE3 suitable for driving inductive loads without external flyback protection?
Yes, the SQ2360EES-T1-GE3 is 100 % UIS tested and rated for 1.8 mJ single-pulse avalanche energy, making it capable of safely clamping inductive kickback from solenoids, relays, and small DC motors without external diodes in many automotive applications. However, sustained repetitive inductive switching requires careful SOA analysis and may still benefit from external suppression depending on load L/R ratio and frequency. The SQ2360EES-T1-GE3 body diode VSD is 0.8–1.2 V at 1.5 A, providing inherent freewheeling path.
Does SQ2360EES-T1-GE3 meet AEC-Q101 requirements for automotive qualification?
Yes, SQ2360EES-T1-GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet revision F (26-May-14), covering stress tests including temperature cycling, highly accelerated life testing (HALT), and unbiased highly accelerated stress testing (UHAST). This qualification applies to the full SOT-23 packaged device and confirms suitability for automotive powertrain, chassis, and body electronics. The SQ2360EES-T1-GE3 marking code "8Mxxx" identifies units from qualified production lots.
What is the gate threshold voltage range for SQ2360EES-T1-GE3, and how does it affect 3.3 V logic drive?
The SQ2360EES-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.5 V to 2.5 V, ensuring reliable turn-on with 3.3 V microcontroller outputs. At VGS = 4.5 V, it achieves 0.130 Ω RDS(on), delivering sufficient current for most automotive loads. The low threshold minimizes risk of partial turn-on and shoot-through in half-bridge configurations. For robust noise immunity, designers should maintain ≥100 mV margin above VGS(th) max; the SQ2360EES-T1-GE3 meets this with standard 3.3 V I/O rails.
How does the thermal resistance of SQ2360EES-T1-GE3 impact PCB layout decisions?
The SQ2360EES-T1-GE3 has RthJA = 166 °C/W on a 1"² FR-4 PCB and RthJF = 50 °C/W to the drain pad, indicating that thermal performance heavily depends on copper area connected to the drain (pin 3). Effective layouts use ≥1 cm² of 2 oz. copper pour tied to the drain pad via multiple thermal vias. Reducing RthJA below 100 °C/W typically requires internal layer copper planes. The SQ2360EES-T1-GE3 datasheet provides recommended minimum pads and thermal pad dimensions to achieve rated performance.
SQ2360EES-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 370 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2360EES-T1-GE3 FAQ
1.How can I place an order for SQ2360EES-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2360EES-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2360EES-T1-GE3 reliable?
The price and inventory of SQ2360EES-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2360EES-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SQ2360EES-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2360EES-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2360EES-T1-GE3?
SQ2360EES-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2360EES-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2360EES-T1-GE3?
For technical support, including SQ2360EES-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2360EES-T1-GE3 requirements.
6.How does Aetrix verify that SQ2360EES-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2360EES-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2360EES-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SQ2360EES-T1-GE3?
All SQ2360EES-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2360EES-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2360EES-T1-GE3 part is unused and in its original packaging.
Return procedure for SQ2360EES-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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