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Vishay Siliconix SQ2361AEES-T1_BE3
- Part No.:
- SQ2361AEES-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2361AEES-T1_BE3.pdf
- Description:
- MOSFET P-CH 60V 2.8A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,982
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Product details
Overview
SQ2361AEES-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -60 V drain-source voltage, 0.170 Ω RDS(on) at -10 V VGS, and -2.8 A continuous drain current at 25 °C. It serves as a high-side load switch or reverse-polarity protection device in 12 V/24 V automotive power distribution modules.
For engineers reviewing the SQ2361AEES-T1_BE3 datasheet, SQ2361AEES-T1_BE3 pinout, SQ2361AEES-T1_BE3 application, or SQ2361AEES-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction temperature rating, -1.5 V to -2.5 V gate threshold voltage, and 100 % UIS-tested ruggedness for inductive load switching in engine control units and body electronics.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with tight parametric distribution across temperature. Its negative gate threshold enables direct logic-level drive from automotive microcontrollers without level-shifting, while the integrated source-drain diode supports freewheeling in relay drivers and solenoid controls.
The device features guaranteed Rg (4.3 Ω typ) and single-pulse avalanche energy rating (8.4 mJ), supporting robust transient immunity in stop-start systems and battery disconnect circuits where unclamped inductive kickback must be absorbed without failure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Supports full automotive load dump (ISO 7637-2 Pulse 5a) up to 60 V without breakdown |
| RDS(on) @ -10 V | 0.170 Ω - Enables ≤ 1.2 W conduction loss at -2.8 A, suitable for thermally constrained PCB areas |
| ID (cont) | -2.8 A @ TC = 25 °C - Matches typical current requirements of HVAC actuators and door lock motors |
| VGS(th) | -1.5 to -2.5 V - Ensures reliable turn-on with 3.3 V or 5 V MCU GPIOs in low-voltage wake-up modes |
| EAS | 8.4 mJ - Absorbs single-pulse inductive energy from 12 V solenoids (e.g., fuel injectors) without derating |
| TJ max | +175 °C - Certified for under-hood placement in transmission control modules and ADAS ECUs |
| Qg | 10–15 nC - Enables fast switching (<30 ns rise/fall) with standard gate drivers, minimizing switching losses |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 1.12 mm max height, 2.64 mm max width, and 3.04 mm max length - optimized for automated placement and reflow in high-volume automotive PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting negative VGS; requires no external pull-up due to P-channel topology |
| 2 (S) | Source | Common reference node tied to system supply rail; connects to internal body diode anode |
| 3 (D) | Drain | Switched output node; connects to load; forms cathode of integrated source-drain diode |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test conditions including HTOL, TC, UHAST, and ESD - eliminates qualification overhead for Tier 1 suppliers |
| 100 % UIS tested | Each unit undergoes unclamped inductive switching validation at rated IAS = -13 A, ensuring field reliability in motor drive applications |
| TrenchFET® process | Delivers 20 % lower RDS(on) vs. planar P-MOSFETs in same SOT-23 footprint, reducing thermal footprint by 1.5 °C/W |
| ESD protection | 800 V HBM rating - withstands handling and assembly ESD events without external protection components |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - meets global automotive environmental compliance mandates |
Applications
| Engine Control Unit (ECU) Power Switching | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and ignition coil primary circuits in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled power path with fast turn-off to limit inductive flyback energy. Use Value: 8.4 mJ EAS rating ensures single-pulse survivability during misfire events; -60 V VDS accommodates 12 V system transients. | Use Scenario: Reverse-polarity protection and load switching for interior lighting, window lift motors, and mirror actuators. IC Role / Device Role / Timing Role: High-side switch enabling fail-safe shutdown and battery isolation during sleep mode. Use Value: -2.5 V VGS(th) max allows clean turn-on with 3.3 V CAN/LIN microcontroller outputs; +175 °C rating supports under-dash mounting. |
| Start-Stop System Battery Management | ADAS Camera Power Sequencing |
Use Scenario: Controlled connection/disconnection of auxiliary battery banks during engine cranking and regenerative braking phases. IC Role / Device Role / Timing Role: Load switch managing bidirectional current flow with integrated body diode for freewheeling. Use Value: -2.8 A ID rating matches typical auxiliary load currents; 0.170 Ω RDS(on) limits voltage drop to <500 mV at full load. | Use Scenario: Sequenced power enable for multi-rail camera modules requiring strict inrush current control and fault isolation. IC Role / Device Role / Timing Role: Pre-regulator switch isolating downstream DC-DC converters during fault conditions. Use Value: 100 % UIS testing guarantees survival during hot-swap events; SOT-23 footprint enables compact layout near sensor connectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V (lower), but VDS = -20 V only - insufficient for 12 V load dump | Restricted to low-voltage infotainment subsystems; not AEC-Q101 qualified | Select only for non-automotive 3.3 V logic-driven loads where voltage margin is not required |
| IPB80P04P4L-02 | TO-263 package, -40 V VDS, 0.0028 Ω RDS(on) - higher current, larger footprint, different thermal path | Designed for high-power motor drives; incompatible SOT-23 PCB layout and thermal management | Choose when >10 A current or forced-air cooling is needed; not a drop-in replacement |
Compared with DMG2305UVT-7 and IPB80P04P4L-02, the SQ2361AEES-T1_BE3 uniquely balances -60 V rating, AEC-Q101 compliance, and SOT-23 scalability - making it the only viable option for space-constrained, high-transient automotive high-side switches requiring 175 °C operation.
Availability
SQ2361AEES-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and start-stop battery management systems requiring stable component supply across extended product lifecycles.
Supply support for SQ2361AEES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ2361AEES-T1_BE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET family, engineered specifically for high-reliability, high-temperature switching in 12 V and 24 V vehicle electrical architectures.
FAQ
What is the maximum junction temperature rating for SQ2361AEES-T1_BE3?
The SQ2361AEES-T1_BE3 is rated for a maximum junction temperature of +175 °C, validated per AEC-Q101 stress testing. This enables deployment in under-hood environments such as transmission control units and engine compartments where ambient temperatures exceed 125 °C. The SQ2361AEES-T1_BE3 maintains specified RDS(on) and switching parameters up to this limit, with thermal derating curves provided in the datasheet for PCB layout optimization.
Is SQ2361AEES-T1_BE3 suitable for reverse-polarity protection in automotive applications?
Yes, SQ2361AEES-T1_BE3 is widely used for reverse-polarity protection due to its P-channel configuration, -60 V VDS rating, and integrated source-drain diode. When placed high-side with source tied to battery positive, it blocks reverse current while conducting forward current with only 0.170 Ω on-resistance at -10 V gate drive. The SQ2361AEES-T1_BE3's AEC-Q101 qualification and 175 °C rating ensure reliability in harsh automotive environments where polarity reversal may occur during jump-starting or service.
Does SQ2361AEES-T1_BE3 require a gate driver IC for MCU interfacing?
No, SQ2361AEES-T1_BE3 does not require an external gate driver when driven by standard 3.3 V or 5 V automotive microcontrollers. Its VGS(th) range of -1.5 V to -2.5 V ensures full enhancement with logic-level gate voltages, and its 10–15 nC total gate charge allows fast switching using typical MCU GPIOs with series resistance ≤10 Ω. The SQ2361AEES-T1_BE3's low Qg and moderate Rg (4.3 Ω typ) simplify drive circuitry while maintaining <30 ns switching times.
What is the significance of 100 % UIS testing for SQ2361AEES-T1_BE3?
100 % UIS (Unclamped Inductive Switching) testing means every SQ2361AEES-T1_BE3 unit is individually validated to safely absorb inductive energy without failure - critical for driving solenoids, relays, and fuel injectors. During UIS stress, the SQ2361AEES-T1_BE3 operates in avalanche mode, dissipating energy up to its rated 8.4 mJ EAS. This 100 % production test eliminates field failures caused by unclamped inductive kickback, distinguishing it from MOSFETs that only meet UIS spec statistically.
How does SQ2361AEES-T1_BE3 compare to generic SOT-23 P-MOSFETs in thermal performance?
SQ2361AEES-T1_BE3 delivers superior thermal performance versus generic SOT-23 P-MOSFETs due to its optimized die-to-package interface and Vishay's TrenchFET® process, achieving RthJA = 175 °C/W (PCB mount) and RthJF = 75 °C/W (junction-to-foot). Its 0.170 Ω RDS(on) at -10 V reduces static power dissipation by ~35 % compared to typical 0.26 Ω alternatives, directly lowering junction temperature rise. The SQ2361AEES-T1_BE3's thermal metrics are fully characterized per JEDEC standards and validated across -55 °C to +175 °C.
SQ2361AEES-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2361AEES-T1_BE3 FAQ
1.How can I place an order for SQ2361AEES-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2361AEES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2361AEES-T1_BE3 reliable?
The price and inventory of SQ2361AEES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2361AEES-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ2361AEES-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2361AEES-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2361AEES-T1_BE3?
SQ2361AEES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2361AEES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2361AEES-T1_BE3?
For technical support, including SQ2361AEES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2361AEES-T1_BE3 requirements.
6.How does Aetrix verify that SQ2361AEES-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ2361AEES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2361AEES-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ2361AEES-T1_BE3?
All SQ2361AEES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2361AEES-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2361AEES-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ2361AEES-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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