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Vishay Siliconix SQ2361CEES-T1_GE3
- Part No.:
- SQ2361CEES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2361CEES-T1_GE3.pdf
- Description:
- MOSFET P-CH 60V 2.8A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,754
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Product details
Overview
SQ2361CEES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -60 V drain-source voltage, 0.170 Ω RDS(on) at VGS = -10 V, and -2.8 A continuous drain current at TC = 25 °C. It serves as a high-side load switch in 12 V/24 V automotive power distribution systems requiring AEC-Q101 qualification and 175 °C junction operation.
For engineers reviewing the SQ2361CEES-T1_GE3 datasheet, SQ2361CEES-T1_GE3 pinout, SQ2361CEES-T1_GE3 application, or SQ2361CEES-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, SOT-23 terminal mapping, and validated alternatives for automotive body control modules, LED lighting drivers, and reverse-polarity protection circuits.
Technical Context
This device employs Vishay's TrenchFET® process to achieve low gate charge (10–15 nC) and fast switching (td(on) = 9–12 ns, tf = 4–6 ns), enabling efficient PWM control in space-constrained automotive modules. Its -1.5 V to -2.5 V gate threshold voltage ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
The integrated body diode exhibits 23–46 ns reverse recovery time and 25–50 nC Qrr, supporting synchronous rectification and flyback energy recirculation in DC-DC converters. Thermal resistance of 75 °C/W (junction-to-foot) enables direct thermal coupling to PCB copper planes for sustained 0.67 W dissipation at 125 °C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Withstands transients up to ISO 7637-2 Pulse 1 (-100 V/50 ms) in 24 V systems without avalanche failure. |
| RDS(on) @ VGS = -10 V | 0.170 Ω max - Limits conduction loss to ≤ 1.2 mW at 100 mA load; supports ≥ 95 % efficiency in low-power switches. |
| ID (continuous) | -2.8 A @ TC = 25 °C - Sustains typical automotive solenoid or relay coil currents without derating on 1" FR4 PCB. |
| Qg | 10–15 nC - Enables <1 μs full-switching cycle with 10 Ω gate resistor, reducing dynamic losses in 100 kHz+ PWM. |
| TJ range | -55 to +175 °C - Qualified for under-hood applications including engine control units and transmission control modules. |
| EAS | 8.4 mJ - Absorbs inductive kickback from 100 mH loads switched at 1 A without external snubber. |
| VGS(th) | -1.5 to -2.5 V - Ensures robust noise margin against 12 V system ripple while enabling direct microcontroller drive. |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3 terminals: 1.7 mm × 2.9 mm footprint, 1.12 mm max height, and 0.95 mm lead pitch. Designed for automated placement and reflow soldering per IPC-J-STD-020D.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≤ ±20 V bias; 2.15–6.45 Ω internal gate resistance limits ringing. |
| 2 (S) | Source | Reference node for gate drive; connects to system ground or high-side rail return path in P-channel configuration. |
| 3 (D) | Drain | High-side output terminal; thermally coupled to PCB copper via exposed drain pad; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, HTRB, and UHAST-no field reliability waivers needed. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and single-pulse avalanche ruggedness (IAS = -13 A, EAS = 8.4 mJ). |
| TrenchFET® technology | Delivers 25 % lower RDS(on) vs. planar P-MOSFETs in same SOT-23 footprint, improving thermal headroom by 12 °C/W. |
| ESD protection | 800 V HBM rating eliminates need for external TVS in most dashboard and infotainment I/O interfaces. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). |
Applications
| Automotive Body Control Module | LED Headlamp Driver |
|---|---|
Use Scenario: High-side switching of door lock actuators and window lift motors in 12 V battery-powered systems. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with active-low enable signal from MCU GPIO. Use Value: -2.8 A rating handles peak inrush of 2.5 A solenoids; 175 °C rating ensures operation near HVAC ducts. |
Use Scenario: Constant-current dimming control for daytime running lights (DRL) using PWM frequency > 200 Hz. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter stage regulating 12 V → 5 V for LED strings. Use Value: 4–6 ns fall time minimizes switching loss at 500 kHz; low Qgd/Qgs ratio improves duty cycle linearity. |
| Reverse-Polarity Protection | Start-Stop System Power Switch |
Use Scenario: Preventing damage from accidental battery cable reversal in aftermarket telematics units. IC Role / Device Role / Timing Role: Low-loss series pass element placed between battery input and main DC-DC converter. Use Value: 0.170 Ω RDS(on) limits voltage drop to 425 mV at 2.5 A, avoiding brownout during cold cranking. |
Use Scenario: Managing auxiliary power rail during engine stop/start cycles in mild hybrid vehicles. IC Role / Device Role / Timing Role: Controlled power gating element activated by BCM command to isolate non-critical loads. Use Value: 100 % UIS testing ensures survival of 100 V load dump pulses; -55 °C start capability supports arctic climates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LFG-7 | Lower VDS (-20 V), higher ID (-4.2 A), smaller 1.6 mm × 1.6 mm DFN package; no AEC-Q101 qualification. | Suitable only for non-automotive 3.3 V logic-controlled loads; cannot replace SQ2361CEES-T1_GE3 in ISO 16750-compliant designs. | Select when board space is critical and automotive qualification is not required. |
| AO3401 | Same SOT-23 package, -30 V VDS, 0.085 Ω RDS(on) @ -4.5 V, but only industrial-grade (not AEC-Q101 qualified). | Lacks high-temperature validation beyond 150 °C; unsuitable for under-hood deployment or extended life testing. | Use for cost-sensitive consumer electronics where 175 °C operation and automotive stress screening are unnecessary. |
Compared with DMN2053LFG-7 and AO3401, SQ2361CEES-T1_GE3 uniquely combines -60 V rating, AEC-Q101 qualification, and 175 °C operation-making it the only viable option for high-reliability automotive power switching where voltage margin, thermal endurance, and qualification compliance are jointly mandatory.
Availability
SQ2361CEES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, reverse-polarity protection circuits, and start-stop system power switches requiring stable component supply across multi-year production cycles.
Supply support for SQ2361CEES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with over 50 years of automotive-grade component development.
The SQ2361CEES-T1_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding extended temperature operation and rigorous stress testing.
FAQ
What is the maximum continuous drain current for SQ2361CEES-T1_GE3 at 125 °C case temperature?
The SQ2361CEES-T1_GE3 supports -1.6 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under high ambient conditions; actual usable current depends on PCB copper area and airflow. The SQ2361CEES-T1_GE3 maintains safe operation within its SOA curve up to this limit without requiring forced cooling.
Is SQ2361CEES-T1_GE3 compatible with standard SOT-23 footprints used for other P-channel MOSFETs?
Yes, SQ2361CEES-T1_GE3 uses the industry-standard SOT-23 (TO-236) package with 0.95 mm lead pitch and defined mechanical dimensions per Vishay document 71196. Its pinout (G-S-D) matches JEDEC MO-178AB, ensuring compatibility with existing SOT-23 land patterns designed for 3-terminal P-MOSFETs like AO3401 or Si2301. No PCB redesign is needed for drop-in replacement within same voltage/current class.
Does SQ2361CEES-T1_GE3 require a gate driver IC for MCU-level control?
No, SQ2361CEES-T1_GE3 features a gate threshold voltage of -1.5 V to -2.5 V, allowing direct drive from 3.3 V or 5 V microcontroller GPIO pins without external level shifting. Its 10–15 nC total gate charge enables clean switching with ≤ 10 Ω series gate resistor; however, a small RC snubber may be added for EMI suppression in noisy automotive environments. The SQ2361CEES-T1_GE3 is optimized for logic-level compatibility.
How does the body diode performance of SQ2361CEES-T1_GE3 impact its use in flyback or buck converter topologies?
The SQ2361CEES-T1_GE3 body diode has a forward voltage of -0.8 to -1.2 V at -1.5 A and reverse recovery time of 23–46 ns, making it suitable for synchronous rectification in low-power DC-DC converters. Its Qrr of 25–50 nC reduces switching loss compared to standard Schottky diodes in 100–500 kHz applications. In flyback configurations, the SQ2361CEES-T1_GE3 body diode safely handles leakage inductance energy without oscillation due to controlled soft recovery characteristics.
What is the significance of the "T1_GE3" suffix in SQ2361CEES-T1_GE3?
The "T1_GE3" suffix denotes Vishay's tape-and-reel packaging variant: "T1" indicates 3000-unit reel quantity, and "GE3" specifies lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1. This suffix confirms the SQ2361CEES-T1_GE3 meets automotive environmental standards and is suitable for high-volume SMT assembly without post-process cleaning or special handling.
SQ2361CEES-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2361CEES-T1_GE3 FAQ
1.How can I place an order for SQ2361CEES-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2361CEES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2361CEES-T1_GE3 reliable?
The price and inventory of SQ2361CEES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2361CEES-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ2361CEES-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2361CEES-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2361CEES-T1_GE3?
SQ2361CEES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2361CEES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2361CEES-T1_GE3?
For technical support, including SQ2361CEES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2361CEES-T1_GE3 requirements.
6.How does Aetrix verify that SQ2361CEES-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2361CEES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2361CEES-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ2361CEES-T1_GE3?
All SQ2361CEES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2361CEES-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2361CEES-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ2361CEES-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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