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Vishay Siliconix SQ2361EES-T1-GE3
- Part No.:
- SQ2361EES-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2361EES-T1-GE3.pdf
- Description:
- MOSFET P-CH 60V 2.5A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,583
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Product details
Overview
SQ2361EES-T1-GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET with -60 V drain-source voltage rating, 0.150 Ω RDS(on) at -10 V gate drive, and AEC-Q101 qualification for under-hood power control in 12 V/24 V systems. It operates up to +175 °C junction temperature and delivers -2.5 A continuous drain current in SOT-23 package.
For engineers reviewing the SQ2361EES-T1-GE3 datasheet, SQ2361EES-T1-GE3 pinout, SQ2361EES-T1-GE3 application, or SQ2361EES-T1-GE3 equivalent, key selection criteria include its -60 V VDS, low RDS(on) at -4.5 V gate drive (0.200 Ω), AEC-Q101 qualification, thermal robustness to +175 °C, and SOT-23 footprint compatibility with space-constrained automotive modules.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with 11.2 nC total gate charge and 7 ns turn-on delay. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard logic-level automotive controllers.
The device integrates a built-in body diode with -0.8 V forward voltage at -1.5 A and supports unidirectional load switching in high-side configurations. Thermal design is enabled by validated RthJA = 175 °C/W (PCB mount) and RthJF = 75 °C/W (junction-to-foot).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Supports 24 V automotive battery systems with 2× safety margin against load dump transients |
| RDS(on) @ -10 V | 0.150 Ω - Enables <150 mW conduction loss at -2.5 A, critical for thermally constrained PCBs |
| RDS(on) @ -4.5 V | 0.200 Ω - Ensures full enhancement with 5 V microcontroller GPIO or CAN/LIN transceiver outputs |
| ID Continuous | -2.5 A @ TC = 25 °C - Rated for sustained current in fan drivers, solenoid controls, and LED matrix switches |
| TJ Range | -55 °C to +175 °C - Qualified for engine bay, transmission, and exhaust proximity mounting per AEC-Q101 |
| Qg | 11.2 nC - Allows efficient 100 kHz PWM switching with <1 W gate driver power at 5 V |
| EAS | 11 mJ - Withstands inductive kickback from 12 V relay coils without external snubbers |
Pinout & Package
Package: SOT-23 (TO-236), surface-mount, 3-terminal plastic package with exposed drain pad for thermal relief. Dimensions: 2.9 mm × 1.3 mm × 1.0 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting -4.5 V to -10 V logic-level drive; 5.4 Ω typical gate resistance limits ringing |
| 2 (D) | Drain | High-side power input node; electrically connected to exposed copper pad for thermal conduction to PCB |
| 3 (S) | Source | Return path to system ground; referenced for gate drive and used as output in high-side switch topology |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, mechanical shock, and humidity testing per Rev. D |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar P-channel MOSFETs at same die size and voltage class |
| ESD protection | 800 V HBM - Reduces need for external ESD protection in infotainment and body control modules |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C for green manufacturing |
Applications
| Engine Control Module Power Switch | Automotive HVAC Blower Control |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and camshaft phaser solenoids in ECU subassemblies. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled 12 V power delivery with fast turn-off (<29 ns td(off)) to prevent coil saturation. Use Value: -175 °C rated junction enables direct mounting near engine control units without derating; RDS(on) stability over temperature avoids current drift in closed-loop timing circuits. | Use Scenario: PWM-controlled blower motor speed regulation in climate control systems using 24 V supply rails. IC Role / Device Role / Timing Role: Low-loss high-side switch enabling 0–100 % duty cycle control with minimal heat generation on compact PCBs. Use Value: 0.200 Ω RDS(on) at -4.5 V allows direct MCU GPIO drive, eliminating level-shifter components and reducing BOM count. |
| Body Control Unit Load Driver | LED Headlamp Dimming Circuit |
Use Scenario: Driving door lock actuators, mirror heaters, and interior lighting loads in centralized body controllers. IC Role / Device Role / Timing Role: Robust load switch handling repetitive inrush currents up to -10 A (pulsed) during actuator engagement. Use Value: 11 mJ single-pulse avalanche energy absorbs energy from inductive loads without failure, improving field reliability. | Use Scenario: Precision dimming of high-brightness LED arrays in adaptive driving beam (ADB) headlamps. IC Role / Device Role / Timing Role: Fast-switching high-side current source enabling >1 kHz PWM with <12 ns fall time for flicker-free illumination. Use Value: Low Crss (40–50 pF) minimizes Miller effect, ensuring stable gate control during rapid transitions across wide temperature ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LFG-7 | RDS(on) = 0.190 Ω @ -4.5 V; VDS = -20 V; SOT-23 package | Limited to 12 V systems only; unsuitable for 24 V load dump environments | Select when cost sensitivity outweighs voltage margin requirements in low-voltage body electronics |
| IPD250N06L3-1R2 | RDS(on) = 1.2 mΩ @ -10 V; TO-252 package; 60 V rating | Higher current (250 A) and larger footprint; requires heatsinking for same thermal performance | Choose for high-power applications where PCB area and thermal mass allow TO-252 layout |
Compared with DMN2053LFG-7 and IPD250N06L3-1R2, the SQ2361EES-T1-GE3 uniquely balances -60 V capability, SOT-23 compactness, and -4.5 V logic compatibility-making it optimal for space-constrained, 24 V automotive modules requiring AEC-Q101 validation without thermal derating.
Availability
SQ2361EES-T1-GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC actuation, and body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQ2361EES-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal solutions.
The SQ2361EES-T1-GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for high-side switching in harsh-environment vehicle subsystems operating up to +175 °C.
FAQ
What is the maximum junction temperature rating for the SQ2361EES-T1-GE3?
The SQ2361EES-T1-GE3 has a specified operating junction temperature range of -55 °C to +175 °C, fully qualified per AEC-Q101 for under-hood automotive applications. This rating is validated through accelerated life testing and thermal transient characterization, and the device maintains RDS(on) stability up to this limit as confirmed in the datasheet's "On-Resistance vs. Junction Temperature" graph.
Is the SQ2361EES-T1-GE3 compatible with 5 V logic-level gate drive?
Yes, the SQ2361EES-T1-GE3 is fully compatible with 5 V logic-level gate drive: its gate threshold voltage range is -1.5 V to -2.5 V, and it achieves 0.200 Ω RDS(on) at VGS = -4.5 V with ID = -1.8 A. This enables direct interface with standard automotive microcontrollers and LIN/CAN transceivers without level-shifting circuitry.
Does the SQ2361EES-T1-GE3 include integrated ESD protection?
Yes, the SQ2361EES-T1-GE3 features typical human-body-model (HBM) ESD protection of 800 V, as stated in the official Vishay datasheet (S12-2198-Rev. C). This level of protection reduces susceptibility to handling damage during assembly and improves robustness in infotainment and body control module environments.
What is the thermal resistance from junction to ambient for the SQ2361EES-T1-GE3?
The SQ2361EES-T1-GE3 has a junction-to-ambient thermal resistance (RthJA) of 175 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value is measured under standardized conditions and serves as a baseline for thermal design; actual performance depends on PCB layout, copper area, and airflow.
How is the SQ2361EES-T1-GE3 marked on the package?
The SQ2361EES-T1-GE3 carries the marking code "8Nxxx" on the top surface of its SOT-23 package, where "xxx" denotes date code and lot traceability information. This marking aligns with Vishay's standard SOT-23 labeling convention and is verified in the "Ordering Information" section of the official datasheet.
SQ2361EES-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 545 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2361EES-T1-GE3 FAQ
1.How can I place an order for SQ2361EES-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2361EES-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2361EES-T1-GE3 reliable?
The price and inventory of SQ2361EES-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2361EES-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SQ2361EES-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2361EES-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2361EES-T1-GE3?
SQ2361EES-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2361EES-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2361EES-T1-GE3?
For technical support, including SQ2361EES-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2361EES-T1-GE3 requirements.
6.How does Aetrix verify that SQ2361EES-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2361EES-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2361EES-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SQ2361EES-T1-GE3?
All SQ2361EES-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2361EES-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2361EES-T1-GE3 part is unused and in its original packaging.
Return procedure for SQ2361EES-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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