My Inquiry
My Account
Vishay Siliconix SQ2361ES-T1_BE3
- Part No.:
- SQ2361ES-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2361ES-T1_BE3.pdf
- Description:
- MOSFET P-CH 60V 2.8A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:91,009
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQ2361ES-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -60 V VDS, 0.177 Ω RDS(on) at -10 V VGS, and -2.8 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power control applications.
For engineers reviewing the SQ2361ES-T1_BE3 datasheet, SQ2361ES-T1_BE3 pinout, SQ2361ES-T1_BE3 application, or SQ2361ES-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, SOT-23 terminal mapping, and validated alternatives for automotive body electronics, load switching, and reverse polarity protection designs.
Technical Context
This device uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with 9 nC total gate charge (Qg) at -10 V. Its -2.5 V maximum gate threshold voltage (VGS(th)) ensures robust turn-on margin in 12 V automotive systems with battery droop.
The MOSFET integrates a source-drain diode with -0.9 V typical forward voltage (VSD) at -1.5 A and supports unidirectional reverse-current blocking. Thermal resistance RthJA is 175 °C/W on 1"² FR4 PCB, enabling compact placement in space-constrained modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Withstands full automotive load-dump transients without breakdown |
| RDS(on) @ -10 V | 0.177 Ω - Delivers ≤ 1.4 W conduction loss at -2.4 A DC load |
| ID (continuous) | -2.8 A @ TC = 25 °C - Supports medium-power solenoid and lamp drivers |
| TJ range | -55 to +175 °C - Certified for engine bay and transmission control unit environments |
| Qg | 9 nC - Enables <11 ns turn-on delay with 1 Ω gate driver for fast PWM control |
| VGS(th) | -1.5 to -2.5 V - Ensures reliable turn-on down to 9 V battery voltage |
| EAS | 7.8 mJ - Withstands single-pulse inductive energy during relay coil de-energization |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3 terminals: 1.7 mm × 2.9 mm footprint, 1.12 mm max height, and 0.95 mm lead pitch. Optimized for automated placement and reflow soldering per IPC-J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≥ -10 V drive for full enhancement; 4.1 Ω typical gate resistance limits ringing |
| 2 (S) | Source | Reference node for gate drive; connects to system ground or high-side return path |
| 3 (D) | Drain | High-side switch output; ties to load supply rail; thermally coupled to PCB copper via exposed drain pad |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UIS stress per Rev. D test plan |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and avalanche ruggedness before shipment |
| TrenchFET® technology | Enables lower RDS(on) vs. planar P-MOSFETs of same die size, improving thermal efficiency |
| Drain-source diode | Integrated body diode with -1.2 V max VSD supports freewheeling in inductive loads |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions |
Applications
| Body Control Module (BCM) | Engine Control Unit (ECU) Power Distribution |
|---|---|
Use Scenario: Switching 12 V accessory loads (e.g., interior lighting, door locks) in centralized vehicle body controllers. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to downstream circuits using logic-level gate drive. Use Value: Low RDS(on) minimizes voltage drop and heat generation during sustained operation at ambient up to 85 °C. | Use Scenario: Isolating sensor power rails or actuator supplies in engine management systems subject to wide temperature swings. IC Role / Device Role / Timing Role: Reverse polarity protection switch placed between battery input and LDO regulator input stage. Use Value: -60 V VDS rating withstands ISO 7637-2 pulse 5a (load dump), eliminating need for external TVS clamping. |
| Transmission Control Module (TCM) | Advanced Driver Assistance Systems (ADAS) Camera Power |
Use Scenario: Controlling solenoid valves and shift actuators in automatic transmission hydraulic control units. IC Role / Device Role / Timing Role: Medium-current P-channel switch driven by microcontroller GPIO with pull-up configuration. Use Value: 175 °C max TJ enables direct mounting near hot transmission housings without derating. | Use Scenario: Enabling/disabling power to rear-view or surround-view camera modules mounted externally on vehicle body panels. IC Role / Device Role / Timing Role: Cold-cranking compatible load switch ensuring camera operation during cranking-induced 6 V battery dips. Use Value: -2.5 V max VGS(th) guarantees turn-on even at 7.5 V supply, supporting ISO 16750-2 cold-cranking profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LW-7 | RDS(on) = 0.22 Ω @ -4.5 V; SOT-23 package; no AEC-Q101 qualification | Not suitable for automotive safety-critical or under-hood locations requiring qualification | Select when cost sensitivity outweighs automotive compliance requirements |
| AO3401A | RDS(on) = 0.085 Ω @ -4.5 V; higher ID rating (-4.2 A); not AEC-Q101 qualified | Better conduction efficiency but lacks automotive reliability validation and high-temp capability | Prefer for non-automotive industrial or consumer power switches needing lower RDS(on) |
Compared with DMN2053LW-7 and AO3401A, SQ2361ES-T1_BE3 trades slightly higher RDS(on) for guaranteed AEC-Q101 qualification, 175 °C operation, and production-tested UIS robustness-critical for automotive power distribution where field failure risk must be minimized.
Availability
SQ2361ES-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine control unit power distribution, and ADAS camera module enable circuits requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQ2361ES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high-reliability and automotive-grade solutions.
The SQ2361ES-T1_BE3 belongs to Vishay's TrenchFET® automotive P-channel MOSFET family, engineered specifically for high-temperature, high-ruggedness load switching in vehicle power networks.
FAQ
What is the maximum continuous drain current rating for SQ2361ES-T1_BE3 at 125 °C case temperature?
The SQ2361ES-T1_BE3 supports -1.6 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under high ambient conditions and must be applied in thermal design calculations for engine bay applications where case temperatures exceed 85 °C. The SQ2361ES-T1_BE3 maintains safe operation within its SOA boundary up to this limit.
Is SQ2361ES-T1_BE3 suitable for reverse polarity protection in 24 V commercial vehicle systems?
SQ2361ES-T1_BE3 is rated for -60 V VDS, making it suitable for 24 V nominal systems with expected transients up to ±58 V per ISO 16750-2. However, its -2.8 A continuous rating and thermal resistance require careful PCB copper area design to manage power dissipation during sustained reverse fault conditions. For higher-current 24 V applications, a larger-package alternative should be evaluated alongside SQ2361ES-T1_BE3.
Does SQ2361ES-T1_BE3 include integrated ESD protection on the gate terminal?
The SQ2361ES-T1_BE3 does not specify integrated gate ESD protection in its datasheet. Gate-source leakage (IGSS) is rated at ±100 nA at ±20 V, consistent with standard MOSFET construction. System-level ESD protection-such as a 10 kΩ series gate resistor and 12 V Zener clamp-is recommended for I/O lines exposed to human contact or harness interfaces. This applies directly to SQ2361ES-T1_BE3 in body control modules where gate traces may route near connectors.
What is the typical gate-to-source capacitance (Ciss) of SQ2361ES-T1_BE3 and how does it affect driving requirements?
SQ2361ES-T1_BE3 has a typical input capacitance (Ciss) of 380 pF at VDS = -30 V, which determines gate charge demand during switching. With 9 nC total gate charge (Qg), this value supports clean edge rates using standard 1–10 Ω gate resistors. Higher Ciss would increase Miller effect and slow switching; SQ2361ES-T1_BE3's value balances speed and drive simplicity for 100 kHz PWM in automotive power switches.
Can SQ2361ES-T1_BE3 be used in parallel configurations to increase current capacity?
SQ2361ES-T1_BE3 is not characterized for paralleling in the datasheet. Its negative temperature coefficient of RDS(on) supports inherent current sharing, but mismatched threshold voltages and layout asymmetry can cause imbalance. For applications requiring >2.8 A, Vishay recommends using a single higher-rated device such as SQJ852EP-T1_GE3 rather than paralleling multiple SQ2361ES-T1_BE3 units, as thermal coupling and gate drive synchronization introduce reliability risks not addressed in SQ2361ES-T1_BE3's qualification scope.
SQ2361ES-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 177mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2361ES-T1_BE3 FAQ
1.How can I place an order for SQ2361ES-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2361ES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2361ES-T1_BE3 reliable?
The price and inventory of SQ2361ES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2361ES-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ2361ES-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2361ES-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2361ES-T1_BE3?
SQ2361ES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2361ES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2361ES-T1_BE3?
For technical support, including SQ2361ES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2361ES-T1_BE3 requirements.
6.How does Aetrix verify that SQ2361ES-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ2361ES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2361ES-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ2361ES-T1_BE3?
All SQ2361ES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2361ES-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2361ES-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ2361ES-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQ2361ES-T1_BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
