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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2361ES-T1_GE3

Name: SQ2361ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2361ES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2361ES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2361ES-T1_GE3.pdf

Description:: MOSFET P-CH 60V 2.8A SSOT23

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Product details

Overview

SQ2361ES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -60 V V_DS, 175 °C maximum junction temperature, and 0.177 Ω R_DS(on) at -10 V V_GS. It delivers -2.8 A continuous drain current and is AEC-Q101 qualified for under-hood power control applications including load switching and reverse polarity protection.

For engineers reviewing the SQ2361ES-T1_GE3 datasheet, SQ2361ES-T1_GE3 pinout, SQ2361ES-T1_GE3 application, or SQ2361ES-T1_GE3 equivalent, this page provides verified electrical parameters, thermal performance data, validated SOT-23 terminal mapping, and confirmed automotive-grade alternatives aligned with ISO/TS 16949 production requirements.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching with 9 nC total gate charge and 8 ns turn-on delay. Its -1.5 V to -2.5 V gate threshold voltage ensures robust noise immunity in 12 V automotive systems while supporting logic-level drive from microcontrollers.

The MOSFET integrates a body diode with -0.9 V forward voltage at -1.5 A and supports unidirectional reverse-current blocking. Thermal design is enabled by 75 °C/W junction-to-foot resistance and 175 °C/W junction-to-ambient rating on 1"² FR4 PCB - critical for space-constrained engine control modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports full automotive battery transients up to ISO 7637-2 Pulse 5a (87 V clamp).
R_DS(on) @ -10 V	0.177 Ω - Enables ≤ 1.2 W conduction loss at -2.8 A, reducing heatsink need in compact ECUs.
I_D (cont)	-2.8 A @ T_C = 25 °C - Sustains typical solenoid or lamp loads without derating in ambient < 85 °C.
Q_g	9 nC - Allows efficient 100 kHz PWM switching with < 1 W gate driver power at 5 V logic level.
T_J max	+175 °C - Qualified for under-hood placement near exhaust manifolds or turbochargers.
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics per JESD22-A108.
E_AS	7.8 mJ - Withstands single-pulse inductive kickback from 12 V relay coils without failure.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 1.02 mm max height, 2.80–3.04 mm length, and 2.10–2.64 mm width - compatible with standard pick-and-place equipment and reflow profiles per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; accepts -10 V to -4.5 V logic-level drive; 4.1 Ω typical gate resistance limits ringing.
2 (S)	Source	Reference node for gate drive; connects to system ground or high-side return path in high-side switch configs.
3 (D)	Drain	Power output terminal; ties to load; thermally coupled to PCB copper for heat dissipation via junction-to-foot path.

Key Features

Feature	Design Value
TrenchFET® construction	Enables 0.130 Ω typical R_DS(on) at -10 V, improving efficiency over planar P-channel MOSFETs by ≥25 %.
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from avalanche overstress.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - supports automotive OEM material declarations.
1"² PCB thermal rating	175 °C/W R_thJA measured on standard FR4 board enables thermal modeling without custom heatsinks.

Applications

Engine Control Unit Power Switching	Automotive Body Control Module
Use Scenario: High-side switching of fuel injector drivers in gasoline direct injection systems. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled 12 V supply enable with < 100 ns turn-off for precise pulse-width modulation. Use Value: 0.246 Ω R_DS(on) at -4.5 V ensures < 2.5 W loss during 5 ms peak injection pulses, maintaining < 125 °C junction temp.	Use Scenario: Reverse polarity protection for LIN bus transceivers and door module sensors. IC Role / Device Role / Timing Role: Low-loss series blocking element placed between battery and protected circuitry. Use Value: -60 V V_DS withstands jump-start transients; -1 μA I_DSS prevents standby current leakage in always-on domains.
LED Headlamp Dimming Circuit	Transmission Control Solenoid Driver
Use Scenario: PWM-controlled current sink for adaptive front-lighting system (AFS) matrix LEDs. IC Role / Device Role / Timing Role: Low-side switch operating at 2 kHz with 12 V supply and 350 mA load current. Use Value: 9 nC Q_g minimizes gate drive losses; 0.177 Ω R_DS(on) limits conduction loss to < 45 mW per channel.	Use Scenario: 12 V solenoid actuation in 8-speed automatic transmission valve bodies. IC Role / Device Role / Timing Role: High-reliability power switch cycling 10⁶+ times over vehicle lifetime. Use Value: AEC-Q101 qualification and 7.8 mJ E_AS ensure survival against inductive flyback spikes during rapid de-energization.

Engine Control Unit Power Switching

Automotive Body Control Module

Use Scenario: High-side switching of fuel injector drivers in gasoline direct injection systems.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled 12 V supply enable with < 100 ns turn-off for precise pulse-width modulation.

Use Value: 0.246 Ω R_DS(on) at -4.5 V ensures < 2.5 W loss during 5 ms peak injection pulses, maintaining < 125 °C junction temp.

Use Scenario: Reverse polarity protection for LIN bus transceivers and door module sensors.

IC Role / Device Role / Timing Role: Low-loss series blocking element placed between battery and protected circuitry.

Use Value: -60 V V_DS withstands jump-start transients; -1 μA I_DSS prevents standby current leakage in always-on domains.

LED Headlamp Dimming Circuit

Transmission Control Solenoid Driver

Use Scenario: PWM-controlled current sink for adaptive front-lighting system (AFS) matrix LEDs.

IC Role / Device Role / Timing Role: Low-side switch operating at 2 kHz with 12 V supply and 350 mA load current.

Use Value: 9 nC Q_g minimizes gate drive losses; 0.177 Ω R_DS(on) limits conduction loss to < 45 mW per channel.

Use Scenario: 12 V solenoid actuation in 8-speed automatic transmission valve bodies.

IC Role / Device Role / Timing Role: High-reliability power switch cycling 10⁶+ times over vehicle lifetime.

Use Value: AEC-Q101 qualification and 7.8 mJ E_AS ensure survival against inductive flyback spikes during rapid de-energization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LFG-7	-20 V V_DS, 0.095 Ω R_DS(on) @ -4.5 V, SOT-23 package	Limited to 24 V systems; not AEC-Q101 qualified	Select only for non-automotive 12 V industrial controls where transient immunity is less critical.
SI2301DS-T1-BE3	-20 V V_DS, 0.115 Ω R_DS(on) @ -4.5 V, same SOT-23 footprint	Lower voltage rating; no 175 °C operation or UIS testing	Acceptable for cabin electronics with ambient < 105 °C and no under-hood placement.

Compared with DMN2053LFG-7 and SI2301DS-T1-BE3, the SQ2361ES-T1_GE3 uniquely supports -60 V transients, 175 °C operation, and AEC-Q101 validation - making it the only option for engine bay power switching where reliability under extreme thermal and electrical stress is mandatory.

Availability

SQ2361ES-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, LED lighting systems, and transmission solenoid drivers requiring stable component supply across extended temperature and voltage ranges.

Supply support for SQ2361ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with manufacturing and reliability validation across automotive, industrial, and computing markets.

The SQ2361ES-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® automotive MOSFET family, engineered specifically for high-reliability 12 V and 24 V vehicle subsystems demanding extended temperature operation and transient robustness.

FAQ

What is the maximum continuous drain current for SQ2361ES-T1_GE3 at 125 °C case temperature?

The SQ2361ES-T1_GE3 supports -1.6 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under high ambient conditions and must be applied when designing for under-hood environments exceeding 85 °C ambient temperature. The SQ2361ES-T1_GE3 maintains safe operation within its SOA curve up to this limit.

Does SQ2361ES-T1_GE3 require a gate resistor for automotive 12 V applications?

Yes - a 10 Ω to 47 Ω gate resistor is recommended for SQ2361ES-T1_GE3 in automotive applications to dampen ringing caused by PCB trace inductance and prevent false turn-on from dv/dt coupling. The SQ2361ES-T1_GE3 has 4.1 Ω typical gate resistance, but external resistance improves EMI performance and ensures clean switching edges during CAN/LIN bus co-location.

Is SQ2361ES-T1_GE3 suitable for reverse battery protection in 24 V commercial vehicles?

No - the SQ2361ES-T1_GE3 is rated for -60 V V_DS, which meets 12 V automotive requirements (ISO 7637-2 Pulse 5a), but is insufficient for 24 V systems where transients can exceed -100 V. For 24 V commercial vehicles, a -100 V or higher P-channel MOSFET such as SQM40024EL is required; the SQ2361ES-T1_GE3 should only be used in certified 12 V passenger car platforms.

What is the body diode forward voltage of SQ2361ES-T1_GE3 at -1.5 A and 25 °C?

The body diode forward voltage of SQ2361ES-T1_GE3 is -0.9 V to -1.2 V at I_F = -1.5 A and T_J = 25 °C, per the Source-Drain Diode Characteristics table. This low V_SD reduces conduction loss during freewheeling in inductive load circuits and contributes to the SQ2361ES-T1_GE3's suitability for high-efficiency solenoid drivers.

How does the SQ2361ES-T1_GE3 perform at elevated junction temperatures?

The SQ2361ES-T1_GE3 exhibits controlled R_DS(on) increase with temperature: 0.320 Ω max at T_J = 175 °C and V_GS = -10 V, ID = -2.4 A. This predictable drift allows accurate thermal modeling in engine control units, and the SQ2361ES-T1_GE3 remains fully functional across its -55 °C to +175 °C operating range without parameter discontinuity.

SQ2361ES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 177mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: -

SQ2361ES-T1_GE3 FAQ

1.How can I place an order for SQ2361ES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2361ES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2361ES-T1_GE3 reliable?

The price and inventory of SQ2361ES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2361ES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2361ES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2361ES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2361ES-T1_GE3?

SQ2361ES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2361ES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2361ES-T1_GE3?

For technical support, including SQ2361ES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2361ES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2361ES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2361ES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2361ES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2361ES-T1_GE3?

All SQ2361ES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2361ES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2361ES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2361ES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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