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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2362CES-T1_GE3

Name: SQ2362CES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2362CES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2362CES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2362CES-T1_GE3.pdf

Description:: MOSFET N-CH 60V 4.3A SOT23-3

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Product details

Overview

SQ2362CES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 60 V V_DS, 4.3 A continuous drain current at 25 °C, and R_DS(on) of 0.068 Ω at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood automotive power switching in DC-DC converters, LED drivers, and motor control circuits.

For engineers reviewing the SQ2362CES-T1_GE3 datasheet, SQ2362CES-T1_GE3 pinout, SQ2362CES-T1_GE3 application, or SQ2362CES-T1_GE3 equivalent, key selection criteria include its SOT-23 package thermal performance (R_thJA = 166 °C/W), 100 % R_g and UIS tested reliability, and guaranteed 175 °C operation in space-constrained automotive modules.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(on) and fast switching in high-temperature environments. Its gate threshold voltage (V_GS(th)) is tightly specified at 1.5–2.5 V, enabling robust drive with standard 3.3 V or 5 V logic-level controllers.

The device integrates a body diode with reverse recovery time (t_rr) of 17–34 ns and Q_rr of 15–30 nC, supporting synchronous rectification and flyback topologies where diode conduction and recovery behavior directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin
R_DS(on) @ V_GS = 10 V	0.068 Ω - Enables <1 W conduction loss at 4.3 A, critical for thermally constrained SOT-23 PCB layouts
R_DS(on) @ V_GS = 4.5 V	0.075 Ω - Supports direct drive from 5 V microcontrollers without level-shifting circuitry
I_D (continuous)	4.3 A @ T_C = 25 °C - Rated for sustained current in compact surface-mount power stages
T_J operating range	−55 to +175 °C - Qualified for engine bay, transmission control, and ADAS sensor module mounting
Q_g (total gate charge)	8.1–12 nC - Determines gate driver power requirement and switching speed in PWM applications
AEC-Q101 qualified	Yes - Validated per automotive stress test requirements including HTOL, TC, and UHAST

Pinout & Package

SOT-23 (TO-236) package: 3-pin surface-mount, 2.8 mm × 2.1 mm footprint, 1.12 mm max height, with drain-connected tab for thermal relief on PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤20 V absolute max rating; 1.3–4.1 Ω internal gate resistance limits ringing
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side switch configurations
3 (D)	Drain	High-side power path; internally connected to exposed pad for thermal conduction to PCB

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) per mm² in SOT-23, reducing board area and thermal resistance
100 % R_g and UIS testing	Ensures gate robustness against transient overvoltage and avalanche energy survival in real-world load dumps
Body diode with t_rr = 17–34 ns	Minimizes reverse recovery losses in buck and flyback converters operating above 100 kHz
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly
Marking code "9X"	Enables traceability to wafer lot and assembly batch for automotive PPAP documentation

Applications

Automotive LED Headlamp Driver	Engine Control Unit (ECU) Solenoid Switch
Use Scenario: High-brightness LED arrays in adaptive front lighting systems requiring PWM dimming and thermal derating at 125 °C ambient. IC Role / Device Role / Timing Role: Low-side switching element controlling LED current path; driven by MCU PWM output with 4.5 V gate voltage. Use Value: R_DS(on) = 0.075 Ω @ 4.5 V ensures <1.5 W loss at 4.3 A, enabling stable operation without heatsink in sealed headlamp housing.	Use Scenario: 12 V solenoid actuation in fuel injectors or variable valve timing actuators with repetitive 10 ms on/off cycles. IC Role / Device Role / Timing Role: Power switch interfacing between ECU microcontroller and inductive load; handles 17 A pulsed current during turn-on. Use Value: Single-pulse avalanche energy rating (E_AS = 7 mJ) clamps inductive kickback safely without external snubber components.
ADAS Camera Module Power Sequencing	12 V to 5 V Automotive DC-DC Converter
Use Scenario: Controlled power-up/down sequencing of image sensor, ISP, and interface ICs in surround-view camera modules. IC Role / Device Role / Timing Role: Hot-swap enable switch placed between input rail and downstream LDOs; supports soft-start via gate RC network. Use Value: V_GS(th) = 1.5–2.5 V allows precise turn-on threshold tuning with resistor divider, preventing brown-out during cold-crank conditions.	Use Scenario: Primary switch in synchronous buck converter supplying 5 V to infotainment and telematics subsystems. IC Role / Device Role / Timing Role: High-frequency switching element operating at 500 kHz with 2.4 A RMS current; body diode conducts freewheeling current. Use Value: Q_rr = 15–30 nC and t_rr = 17–34 ns reduce cross-conduction losses and EMI generation compared to standard MOSFETs in same package.

Automotive LED Headlamp Driver

Engine Control Unit (ECU) Solenoid Switch

Use Scenario: High-brightness LED arrays in adaptive front lighting systems requiring PWM dimming and thermal derating at 125 °C ambient.

IC Role / Device Role / Timing Role: Low-side switching element controlling LED current path; driven by MCU PWM output with 4.5 V gate voltage.

Use Value: R_DS(on) = 0.075 Ω @ 4.5 V ensures <1.5 W loss at 4.3 A, enabling stable operation without heatsink in sealed headlamp housing.

Use Scenario: 12 V solenoid actuation in fuel injectors or variable valve timing actuators with repetitive 10 ms on/off cycles.

IC Role / Device Role / Timing Role: Power switch interfacing between ECU microcontroller and inductive load; handles 17 A pulsed current during turn-on.

Use Value: Single-pulse avalanche energy rating (E_AS = 7 mJ) clamps inductive kickback safely without external snubber components.

ADAS Camera Module Power Sequencing

12 V to 5 V Automotive DC-DC Converter

Use Scenario: Controlled power-up/down sequencing of image sensor, ISP, and interface ICs in surround-view camera modules.

IC Role / Device Role / Timing Role: Hot-swap enable switch placed between input rail and downstream LDOs; supports soft-start via gate RC network.

Use Value: V_GS(th) = 1.5–2.5 V allows precise turn-on threshold tuning with resistor divider, preventing brown-out during cold-crank conditions.

Use Scenario: Primary switch in synchronous buck converter supplying 5 V to infotainment and telematics subsystems.

IC Role / Device Role / Timing Role: High-frequency switching element operating at 500 kHz with 2.4 A RMS current; body diode conducts freewheeling current.

Use Value: Q_rr = 15–30 nC and t_rr = 17–34 ns reduce cross-conduction losses and EMI generation compared to standard MOSFETs in same package.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN601DWKQ-7	R_DS(on) = 0.075 Ω @ 4.5 V; same SOT-23 package but higher Q_g (14 nC); AEC-Q101 qualified	Higher gate charge increases driver loss at >200 kHz; better suited for lower-frequency solenoid control than high-speed DC-DC	Select DMN601DWKQ-7 when prioritizing cost over switching efficiency in non-PWM applications.
IPB070N06LG	TO-263 package; R_DS(on) = 0.007 Ω @ 10 V; 60 A rated; AEC-Q101 qualified	Requires PCB redesign due to larger footprint and thermal pad; intended for high-current inverters, not space-limited modules	Choose IPB070N06LG only when >10 A continuous current or <0.01 Ω R_DS(on) is mandatory-no drop-in replacement.

Compared with DMN601DWKQ-7 and IPB070N06LG, SQ2362CES-T1_GE3 uniquely balances ultra-compact SOT-23 packaging, 175 °C capability, and sub-0.08 Ω R_DS(on) at 4.5 V-making it optimal for thermally dense, size-constrained automotive modules where layout area and junction temperature are primary constraints.

Availability

SQ2362CES-T1_GE3 is available at Aetrix Electronics and suitable for automotive LED drivers, ECU solenoid interfaces, and ADAS camera power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ2362CES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ2362CES-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine control, lighting, and safety-critical electronic modules.

FAQ

What is the maximum junction temperature rating for SQ2362CES-T1_GE3?

The SQ2362CES-T1_GE3 is rated for continuous operation from −55 °C to +175 °C junction temperature and is AEC-Q101 qualified for automotive under-hood use. This rating is validated through high-temperature operating life (HTOL) testing and applies across its full voltage and current operating range, making SQ2362CES-T1_GE3 suitable for placement near heat sources such as engines or power converters without derating below 175 °C.

Is SQ2362CES-T1_GE3 compatible with standard SOT-23 footprints and reflow profiles?

Yes, SQ2362CES-T1_GE3 uses the industry-standard SOT-23 (TO-236) package with documented dimensions (2.80–3.04 mm × 2.10–2.64 mm) and is qualified for lead-free reflow per JEDEC J-STD-020. Its thermal pad is electrically connected to the drain, so PCB layout must isolate the pad from ground unless intentional thermal sinking to drain potential is required-SQ2362CES-T1_GE3 does not require special stencil or profile adjustments beyond standard Class 3 lead-free processes.

Does SQ2362CES-T1_GE3 have integrated avalanche ruggedness?

Yes, SQ2362CES-T1_GE3 is 100 % tested for unclamped inductive switching (UIS) and specifies single-pulse avalanche energy (E_AS) of 7 mJ at T_J = 25 °C. This ruggedness enables reliable operation in inductive load switching (e.g., solenoids, relays) without external snubbers, and the rating is maintained across its qualified temperature range-confirming SQ2362CES-T1_GE3's suitability for automotive transients defined in ISO 7637-2.

What is the gate threshold voltage range for SQ2362CES-T1_GE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for SQ2362CES-T1_GE3 is specified from 1.5 V to 2.5 V at I_D = 250 μA. This tight range ensures consistent turn-on behavior across temperature and process variation, allowing direct interface with 3.3 V and 5 V microcontrollers without gate drivers. At V_GS = 4.5 V, SQ2362CES-T1_GE3 delivers R_DS(on) = 0.075 Ω-confirming strong enhancement-mode operation well within logic-level drive margins.

How does the body diode performance of SQ2362CES-T1_GE3 compare to general-purpose MOSFETs in the same package?

SQ2362CES-T1_GE3 features a fast, low-Q_rr body diode with reverse recovery time (t_rr) of 17–34 ns and Q_rr of 15–30 nC-measured under standardized 3.9 A, 100 A/μs conditions. This outperforms typical SOT-23 MOSFETs (t_rr > 50 ns, Q_rr > 50 nC), reducing switching losses and EMI in synchronous rectifier and flyback applications-key for maintaining efficiency in compact 12 V automotive DC-DC converters using SQ2362CES-T1_GE3.

SQ2362CES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 68mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2362CES-T1_GE3 FAQ

1.How can I place an order for SQ2362CES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2362CES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2362CES-T1_GE3 reliable?

The price and inventory of SQ2362CES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2362CES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2362CES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2362CES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2362CES-T1_GE3?

SQ2362CES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2362CES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2362CES-T1_GE3?

For technical support, including SQ2362CES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2362CES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2362CES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2362CES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2362CES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2362CES-T1_GE3?

All SQ2362CES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2362CES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2362CES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2362CES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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