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Vishay Siliconix SQ2362ES-T1_BE3
- Part No.:
- SQ2362ES-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2362ES-T1_BE3.pdf
- Description:
- MOSFET N-CH 60V 4.3A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:405
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Product details
Overview
SQ2362ES-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 4.3 A continuous drain current at 25 °C, and 0.068 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for under-hood motor control and load switching in automotive ECUs.
For engineers reviewing the SQ2362ES-T1_BE3 datasheet, SQ2362ES-T1_BE3 pinout, SQ2362ES-T1_BE3 application, or SQ2362ES-T1_BE3 equivalent, key selection criteria include its SOT-23 package footprint, 100 % Rg and UIS tested reliability, low gate charge (7.6 nC typ), and validated thermal performance on FR4 PCBs.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and high-side/low-side load switches. Its 1.5–2.5 V gate threshold voltage enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while the integrated body diode supports freewheeling in inductive loads.
The device features a junction-to-foot thermal resistance of 50 °C/W and junction-to-ambient of 166 °C/W (PCB mount), enabling reliable operation in thermally constrained automotive modules. All units undergo 100 % Rg and unclamped inductive switching (UIS) testing per AEC-Q101 requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V battery rails. |
| RDS(on) @ VGS = 10 V | 0.068 Ω - Low on-resistance minimizes I²R losses in 4.3 A continuous switching applications. |
| ID (continuous, TC = 25 °C) | 4.3 A - Rated current supports medium-power solenoid and fan drivers without heatsinking. |
| Qg (total gate charge) | 7.6 nC typ - Enables efficient 1 MHz-class switching with moderate gate driver strength. |
| TJ operating range | −55 to +175 °C - Full automotive temperature compliance for engine bay and transmission control units. |
| VGS(th) | 1.5–2.5 V - Ensures turn-on with standard logic-level MCU outputs and reduces risk of spurious conduction. |
| Ciss | 440–550 pF - Predictable input capacitance simplifies gate drive loop stability analysis. |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3 leads: 1. Gate (G), 2. Source (S), 3. Drain (D). Dimensions: 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm height. Designed for reflow soldering on 1"×1" FR4 PCBs with 2 oz copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate terminal | Controls channel conduction; requires ≤ ±20 V bias; 1.3–4.1 Ω gate resistance affects switching speed and ringing. |
| 2 (S) | Source terminal | Reference node for gate drive; connects to system ground or floating return path in high-side configurations. |
| 3 (D) | Drain terminal | High-side or low-side power path connection; thermally coupled to PCB copper via exposed drain pad in SOT-23 variant. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UIS stress-no additional qualification required for Tier 1 ECU designs. |
| 100 % Rg test | Each unit verified for gate resistance consistency, ensuring predictable turn-on timing and reducing batch-to-batch timing skew in synchronized arrays. |
| TrenchFET® architecture | Delivers lower RDS(on) per die area than planar MOSFETs, enabling compact SOT-23 packaging without sacrificing current capability. |
| Integrated body diode | Rated for 3.8 A continuous source current and 12 A single-pulse avalanche energy-supports safe inductive flyback in relay/solenoid drivers. |
Applications
| Engine Control Unit Load Switch | Automotive HVAC Blower Driver |
|---|---|
Use Scenario: Switching 12 V fuel pump or injector solenoid in engine management module with ambient temperatures up to 150 °C. IC Role / Device Role / Timing Role: Low-side power switch controlling current flow to inductive load; handles repetitive 100 ms pulses with 20 % duty cycle. Use Value: 0.068 Ω RDS(on) limits power dissipation to <150 mW at 4.3 A, eliminating need for external heatsink in sealed ECU enclosures. | Use Scenario: Driving brushed DC blower motor in climate control system with PWM speed regulation. IC Role / Device Role / Timing Role: High-side or low-side PWM switch operating at 20–25 kHz; withstands reverse recovery stress from motor back-EMF. Use Value: 12 A single-pulse avalanche rating and 7 mJ EAS prevent failure during motor stall or sudden direction reversal events. |
| Body Control Module LED Driver | Transmission Control Solenoid Interface |
Use Scenario: Controlling high-brightness LED clusters (e.g., daytime running lights) with constant-current regulation. IC Role / Device Role / Timing Role: Precision current sink switch; gate driven by op-amp feedback loop to maintain stable LED current. Use Value: Tight VGS(th) distribution (1.5–2.5 V) ensures consistent turn-on across production lots, minimizing LED brightness variation. | Use Scenario: Actuating hydraulic pressure control solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: Robust low-side switch handling 2.5 A continuous current at 125 °C case temperature during sustained gear shifts. Use Value: RDS(on) derating to 0.147 Ω at 175 °C still delivers <1 W conduction loss-critical for long-term reliability in oil-immersed environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | 20 V VDS, 4.6 A ID, 0.042 Ω RDS(on) @ 4.5 V - lower voltage rating, tighter gate threshold (0.5–1.2 V). | Not suitable for 48 V or 60 V bus applications; limited to 12 V/24 V low-voltage subsystems. | Select only when system VDS < 25 V and logic-level drive below 1.2 V is required. |
| IPD220N06N3GATMA1 | 60 V VDS, 22 A ID, 0.0022 Ω RDS(on) @ 10 V - TO-252 package, higher current, 3× larger footprint. | Requires PCB redesign due to DPAK package and thermal pad; over-specified for <5 A loads. | Choose only when >10 A current or >2 W power dissipation demands larger thermal mass. |
Compared with DMN2004LK-7 and IPD220N06N3GATMA1, the SQ2362ES-T1_BE3 uniquely balances AEC-Q101 compliance, SOT-23 space efficiency, and 60 V/4.3 A capability-making it optimal for cost- and size-constrained automotive modules where full DPAK performance is unnecessary.
Availability
SQ2362ES-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC blower drivers, and body control module LED interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQ2362ES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ2362ES-T1_BE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® family, engineered specifically for high-reliability automotive power switching where thermal robustness, avalanche tolerance, and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current for SQ2362ES-T1_BE3 at 125 °C case temperature?
The SQ2362ES-T1_BE3 supports 2.5 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package; actual usable current depends on PCB copper area and ambient conditions. The SQ2362ES-T1_BE3 maintains stable RDS(on) performance up to 175 °C junction temperature.
Is SQ2362ES-T1_BE3 suitable for high-side switching configurations?
Yes, the SQ2362ES-T1_BE3 can be used in high-side configurations when paired with a gate driver capable of providing VGS ≥ 10 V relative to the source node. Its 60 V VDS rating and −55 to +175 °C operating range make it viable for 12 V and 24 V high-side loads, though layout must minimize source inductance to avoid shoot-through during switching transitions. The SQ2362ES-T1_BE3 does not integrate bootstrap or level-shift circuitry.
Does SQ2362ES-T1_BE3 have a guaranteed avalanche energy rating?
Yes, the SQ2362ES-T1_BE3 is rated for 7 mJ single-pulse avalanche energy (EAS) and 12 A single-pulse avalanche current (IAS) under L = 0.1 mH test conditions. These values are production-tested per AEC-Q101 requirements, confirming ruggedness against inductive switching transients in automotive solenoid and motor applications. The SQ2362ES-T1_BE3 datasheet specifies these parameters explicitly in the Absolute Maximum Ratings section.
What is the gate-source leakage current specification for SQ2362ES-T1_BE3?
The SQ2362ES-T1_BE3 has a maximum gate-source leakage current (IGSS) of ±100 nA at VGS = ±20 V and TC = 25 °C, as stated in the Static Characteristics table. This low leakage ensures minimal gate drive current demand and stable turn-off behavior in battery-powered or low-power automotive modules. The SQ2362ES-T1_BE3 maintains this specification across its full operating temperature range.
How does the RDS(on) of SQ2362ES-T1_BE3 change with temperature?
The SQ2362ES-T1_BE3 exhibits positive temperature coefficient behavior: RDS(on) increases from 0.068 Ω at 25 °C to 0.114 Ω at 125 °C and 0.147 Ω at 175 °C (VGS = 10 V, ID = 2.4 A). This characteristic provides inherent current sharing stability in parallel configurations and improves short-circuit tolerance. The SQ2362ES-T1_BE3 datasheet provides normalized RDS(on) vs. TJ curves on page 4.
SQ2362ES-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 68mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2362ES-T1_BE3 FAQ
1.How can I place an order for SQ2362ES-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2362ES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2362ES-T1_BE3 reliable?
The price and inventory of SQ2362ES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2362ES-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ2362ES-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2362ES-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2362ES-T1_BE3?
SQ2362ES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2362ES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2362ES-T1_BE3?
For technical support, including SQ2362ES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2362ES-T1_BE3 requirements.
6.How does Aetrix verify that SQ2362ES-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ2362ES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2362ES-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ2362ES-T1_BE3?
All SQ2362ES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2362ES-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2362ES-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ2362ES-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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