Vishay Siliconix SQ2362ES-T1_GE3

Overview

SQ2362ES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 4.3 A continuous drain current at 25 °C, and 0.068 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a compact high-reliability switch in engine control modules and body electronics.

For engineers reviewing the SQ2362ES-T1_GE3 datasheet, SQ2362ES-T1_GE3 pinout, SQ2362ES-T1_GE3 application, or SQ2362ES-T1_GE3 equivalent, this device is selected for low-voltage automotive load switching where thermal robustness, 100 % R_g and UIS testing, and SOT-23 footprint compatibility are critical design requirements.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching performance: typical total gate charge is 7.6 nC at V_GS = 10 V, with turn-on delay of 6 ns and rise time of 20 ns under standard test conditions (V_DD = 30 V, R_g = 1 Ω). Its dynamic parameters-including C_iss = 440 pF, C_oss = 50 pF, and C_rss = 22 pF-are optimized for efficient gate drive in 12 V automotive systems.

The device integrates a built-in body diode with forward voltage of 0.8 V at I_F = 1.7 A and V_GS = 0 V, supporting bidirectional current handling in H-bridge and reverse-polarity protection circuits. Its thermal resistance R_thJA is 166 °C/W on a 1"² FR4 PCB, enabling reliable operation without heatsinking in space-constrained modules.

Key Specifications

Pinout & Package

SOT-23 (TO-236) package: 3-pin surface-mount, 2.8 mm × 2.1 mm × 1.02 mm body height, lead (Pb)-free and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with DMN2053LW-7 and IPB050N04LGATMA1, the SQ2362ES-T1_GE3 uniquely balances AEC-Q101 compliance, SOT-23 mountability, and 60 V/4.3 A capability-making it the only option among the three qualified for space-constrained, high-temperature automotive load switching without layout change.

Availability

SQ2362ES-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and reverse polarity protection circuits requiring stable component supply across automotive production lifecycles.

Supply support for SQ2362ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ2362ES-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® automotive MOSFET family, engineered specifically for under-hood and chassis-mounted electronic control units demanding extended temperature operation and transient robustness.

FAQ

What is the maximum gate-source voltage rating for SQ2362ES-T1_GE3?

The SQ2362ES-T1_GE3 has a maximum gate-source voltage (V_GS) rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS within –12 V to +15 V, especially during hot-plug or ESD events. The SQ2362ES-T1_GE3 datasheet confirms this rating applies across the full operating temperature range.

Is SQ2362ES-T1_GE3 suitable for high-frequency PWM applications?

Yes, the SQ2362ES-T1_GE3 supports high-frequency PWM with a total gate charge (Q_g) of 7.6 nC and fast switching times: 6 ns turn-on delay, 20 ns rise time, and 18 ns fall time. These values were measured at V_DD = 30 V, R_g = 1 Ω, and I_D ≈ 2.4 A. When paired with appropriate gate drivers, the SQ2362ES-T1_GE3 enables clean 20–50 kHz switching in automotive motor control and LED dimming applications.

Does SQ2362ES-T1_GE3 include an integrated body diode, and what is its forward voltage?

Yes, the SQ2362ES-T1_GE3 includes a monolithic body diode with a typical forward voltage (V_SD) of 0.8 V at I_F = 1.7 A and V_GS = 0 V. This diode is fully characterized in the datasheet's "Source-Drain Diode Ratings" section and supports freewheeling current in inductive loads. Its performance is validated across the full –55 °C to +175 °C junction temperature range, making it usable in regenerative braking interfaces and flyback converters.

How does the R_DS(on) of SQ2362ES-T1_GE3 change with temperature?

The R_DS(on) of SQ2362ES-T1_GE3 increases with junction temperature: at V_GS = 10 V and I_D = 2.4 A, it rises from 0.057 Ω (typical) at 25 °C to 0.147 Ω (max) at 175 °C. This positive temperature coefficient is inherent to silicon MOSFETs and provides inherent current sharing stability in parallel configurations. The SQ2362ES-T1_GE3 datasheet includes normalized R_DS(on) vs. T_J curves confirming this behavior across all operating conditions.

What thermal resistance values apply to SQ2362ES-T1_GE3 in standard PCB mounting?

When mounted on a 1"² FR4 PCB (2 oz. copper, double-sided), the SQ2362ES-T1_GE3 exhibits R_thJA = 166 °C/W (junction-to-ambient) and R_thJF = 50 °C/W (junction-to-foot). These values are measured per JEDEC JESD51-2 and JESD51-14 standards. The foot thermal path is particularly relevant for SOT-23 packages where the drain pad conducts heat directly into inner-layer copper planes. The SQ2362ES-T1_GE3 thermal data is validated across multiple production lots and included in Vishay's official thermal characterization report.