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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3410EV-T1_BE3

Name: SQ3410EV-T1_BE3
Brand: Vishay Siliconix
SKU: SQ3410EV-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3410EV-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3410EV-T1_BE3.pdf

Description:: N-CHANNEL 30-V (D-S) 175C MOSFET

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Product details

Overview

SQ3410EV-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 8 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It delivers R_DS(on) of 0.0175 Ω at V_GS = 10 V and 0.0213 Ω at V_GS = 4.5 V in a TSOP-6 package, supporting high-efficiency low-side switching in engine control units and battery management systems.

For engineers reviewing the SQ3410EV-T1_BE3 datasheet, SQ3410EV-T1_BE3 pinout, SQ3410EV-T1_BE3 application, or SQ3410EV-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, thermal performance up to 175 °C, and validated operation under pulsed avalanche conditions (E_AS = 24 mJ).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in automotive power stages. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 2.5 V, enabling robust turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining low leakage (I_DSS ≤ 150 μA at 175 °C).

Dynamic parameters include total gate charge (Q_g) of 14–21 nC at V_GS = 10 V, input capacitance (C_iss) of 804–1005 pF, and fast switching times (t_d(on) ≤ 14 ns, t_f ≤ 11 ns), supporting high-frequency PWM control in DC-DC converters and motor drivers without excessive gate drive power.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients.
R_DS(on) @ V_GS = 10 V	0.0175 Ω - Enables ≤ 0.35 W conduction loss at 8 A, reducing thermal stress in compact PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.0213 Ω - Ensures reliable on-state performance with 3.3 V microcontroller GPIOs or low-voltage gate drivers.
T_J(max)	+175 °C - Supports operation in under-hood environments without derating in engine control modules.
E_AS	24 mJ - Validated single-pulse avalanche energy tolerance enables robustness against inductive switching surges.
Q_g	14–21 nC - Determines gate driver current requirement (~2.1 mA avg. for 1 MHz PWM with 10 V swing).
R_thJA	110 °C/W - Thermal resistance from junction to ambient on 1"² FR-4 PCB, defining heatsinking needs for sustained 5 W dissipation.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 0.5 mm max height. Optimized for automated assembly and thermal transfer via exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected drain terminals - provide parallel current paths and low-inductance thermal conduction to PCB copper pour.
3	Gate (G)	Control terminal - accepts 0–20 V gate-source voltage; requires <21 nC charge for full enhancement.
4	Source (S)	Reference node for gate drive and current sensing - tied to power ground in low-side switch configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications per stress test requirements including HTOL, TC, UHAST, and ESD.
100 % R_g tested	Ensures consistent gate resistance (1.5–7 Ω) across production lots, critical for predictable switching timing.
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling higher current density in TSOP-6.
100 % UIS tested	Each unit verified for unclamped inductive switching robustness - guarantees E_AS ≥ 24 mJ performance.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for green manufacturing.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive Body Control Module (BCM) Load Switch
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems operating at ambient temperatures up to 150 °C. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current with precise PWM duty cycle modulation. Use Value: 0.0213 Ω R_DS(on) at 4.5 V ensures full saturation using 5 V MCU outputs, minimizing power loss during extended injection pulses.	Use Scenario: Power distribution to lighting, window motors, and HVAC actuators in centralized body electronics architectures. IC Role / Device Role / Timing Role: Protected load switch providing overcurrent and thermal shutdown via external monitoring circuitry. Use Value: 175 °C T_J(max) allows uninterrupted operation during prolonged high-current loads in sealed BCM enclosures.
12 V Battery Management System (BMS) Protection	Start-Stop System Solenoid Interface
Use Scenario: Reverse polarity and short-circuit protection in automotive 12 V battery backup circuits with real-time current monitoring. IC Role / Device Role / Timing Role: Primary power FET in high-side or low-side protection path, controlled by dedicated protection IC. Use Value: 30 V V_DS rating accommodates ISO 7637-2 pulse 5a (load dump up to 35 V), eliminating need for external clamping.	Use Scenario: Engagement/disengagement control of starter motor solenoids in micro-hybrid start-stop systems with frequent cycling. IC Role / Device Role / Timing Role: Fast-switching interface between low-power controller and high-current solenoid coil. Use Value: 24 mJ E_AS rating withstands repeated inductive kickback without degradation during >100,000 cycles.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM) Load Switch

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems operating at ambient temperatures up to 150 °C.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current with precise PWM duty cycle modulation.

Use Value: 0.0213 Ω R_DS(on) at 4.5 V ensures full saturation using 5 V MCU outputs, minimizing power loss during extended injection pulses.

Use Scenario: Power distribution to lighting, window motors, and HVAC actuators in centralized body electronics architectures.

IC Role / Device Role / Timing Role: Protected load switch providing overcurrent and thermal shutdown via external monitoring circuitry.

Use Value: 175 °C T_J(max) allows uninterrupted operation during prolonged high-current loads in sealed BCM enclosures.

12 V Battery Management System (BMS) Protection

Start-Stop System Solenoid Interface

Use Scenario: Reverse polarity and short-circuit protection in automotive 12 V battery backup circuits with real-time current monitoring.

IC Role / Device Role / Timing Role: Primary power FET in high-side or low-side protection path, controlled by dedicated protection IC.

Use Value: 30 V V_DS rating accommodates ISO 7637-2 pulse 5a (load dump up to 35 V), eliminating need for external clamping.

Use Scenario: Engagement/disengagement control of starter motor solenoids in micro-hybrid start-stop systems with frequent cycling.

IC Role / Device Role / Timing Role: Fast-switching interface between low-power controller and high-current solenoid coil.

Use Value: 24 mJ E_AS rating withstands repeated inductive kickback without degradation during >100,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 0.0014 Ω R_DS(on) @ 10 V, PG-TSDSON-8 package - higher voltage margin but larger footprint and no AEC-Q101 documentation in public datasheet.	Preferred for 48 V mild-hybrid systems; less suitable for space-constrained TSOP-6 layouts.	Select if 40 V rating and lower R_DS(on) outweigh package size and qualification transparency requirements.
ON Semiconductor NTMFS4C06NT1G	30 V V_DS, 0.0058 Ω R_DS(on) @ 10 V, SO-8FL package - lower on-resistance but not AEC-Q101 qualified per public documentation.	Used in industrial power supplies; lacks automotive reliability validation for safety-critical functions.	Consider only for non-safety automotive subsystems where qualification traceability is not mandated.

Compared with BSC014N04LS6 and NTMFS4C06NT1G, the SQ3410EV-T1_BE3 offers the only combination of AEC-Q101 certification, TSOP-6 form factor, and validated 175 °C operation - making it uniquely suited for space- and reliability-constrained engine bay applications.

Availability

SQ3410EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and battery management systems requiring stable component supply across extended product lifecycles and temperature extremes.

Supply support for SQ3410EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power efficiency, reliability, and miniaturization for automotive, industrial, and computing markets.

The SQ3410EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine management, chassis, and electrification subsystems.

FAQ

What is the maximum continuous drain current rating for SQ3410EV-T1_BE3 at 125 °C case temperature?

The SQ3410EV-T1_BE3 supports 6.8 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package and ensures safe operation without exceeding the 175 °C maximum junction temperature under typical PCB mounting conditions.

Is SQ3410EV-T1_BE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQ3410EV-T1_BE3 is explicitly AEC-Q101 qualified per the Vishay datasheet revision B. Qualification includes high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD) testing per HBM and CDM standards - all performed on representative production lots.

Does SQ3410EV-T1_BE3 have an integrated body diode, and what is its forward voltage?

Yes, SQ3410EV-T1_BE3 includes a parasitic source-drain body diode. At I_F = 5 A and T_J = 25 °C, the forward voltage (V_SD) is 0.8–1.2 V. This diode supports freewheeling current in inductive loads and is characterized for pulsed current up to 32 A (I_SM).

What is the gate threshold voltage range for SQ3410EV-T1_BE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for SQ3410EV-T1_BE3 is 1.5–2.5 V at I_D = 250 μA. This range ensures reliable turn-on with 3.3 V or 5 V logic-level drivers while maintaining low off-state leakage (<100 nA), making it compatible with standard automotive microcontrollers without level-shifting circuitry.

Can SQ3410EV-T1_BE3 be used in high-frequency switching applications such as DC-DC converters?

Yes, SQ3410EV-T1_BE3 is suitable for high-frequency switching up to several hundred kHz due to its low Q_g (14–21 nC), fast switching times (t_d(on) ≤ 14 ns, t_f ≤ 11 ns), and low C_iss (804–1005 pF). Its R_DS(on) stability across temperature further supports consistent efficiency in synchronous buck regulators.

SQ3410EV-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1005 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3410EV-T1_BE3 FAQ

1.How can I place an order for SQ3410EV-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3410EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3410EV-T1_BE3 reliable?

The price and inventory of SQ3410EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3410EV-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ3410EV-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3410EV-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3410EV-T1_BE3?

SQ3410EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3410EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3410EV-T1_BE3?

For technical support, including SQ3410EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3410EV-T1_BE3 requirements.

6.How does Aetrix verify that SQ3410EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ3410EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3410EV-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ3410EV-T1_BE3?

All SQ3410EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3410EV-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3410EV-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ3410EV-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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