Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3410EV-T1_GE3

Name: SQ3410EV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3410EV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ3410EV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3410EV-T1_GE3.pdf

Description:: MOSFET N-CH 30V 8A 6TSOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,749

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ3410EV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET rated for 30 V drain-source voltage, 8 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It delivers R_DS(on) of 17.5 mΩ at V_GS = 10 V and 21.3 mΩ at V_GS = 4.5 V in a TSOP-6 package, enabling high-efficiency power switching in engine control units and body electronics.

For engineers reviewing the SQ3410EV-T1_GE3 datasheet, SQ3410EV-T1_GE3 pinout, SQ3410EV-T1_GE3 application, or SQ3410EV-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % R_g and UIS testing, thermal performance up to 175 °C, and verified gate charge (Q_g = 14–21 nC) for fast switching in 12 V automotive systems.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and robust avalanche capability (E_AS = 24 mJ). Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers in safety-critical circuits.

The device features integrated source-drain diode with V_SD = 0.8–1.2 V at I_F = 5 A and exhibits stable R_DS(on) over temperature-normalized to 1.7× at 175 °C under V_GS = 10 V-supporting sustained operation in under-hood environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	17.5 mΩ - Enables ≤0.35 W conduction loss at 8 A, reducing thermal stress in compact PCB layouts.
R_DS(on) @ V_GS = 4.5 V	21.3 mΩ - Supports direct drive from microcontroller GPIOs without level-shifting in low-voltage control stages.
I_D Continuous @ T_C = 25 °C	8 A - Sustains full-rated current with heatsinking on FR-4 PCB (1" square), suitable for solenoid and motor driver outputs.
T_J Operating Range	−55 to +175 °C - Meets AEC-Q101 requirements for under-hood placement in engine management and transmission control modules.
Q_g Total Gate Charge	14–21 nC - Enables <30 ns turn-off delay with 1 Ω gate resistor, minimizing switching losses in PWM-driven loads.
E_AS Single-Pulse Avalanche Energy	24 mJ - Absorbs inductive kickback from relay coils or fuel injectors without external snubbers.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.05 mm height, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals reduce package inductance and improve current sharing; connected internally to die drain metallization.
3	Gate (G)	Single gate input with R_g = 1.5–7 Ω; designed for low-noise, EMI-optimized gate drive routing.
4	Source (S)	Source terminal tied to PCB ground plane; serves as reference for gate drive and current sensing in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive applications per stress test requirements including HTOL, TC, UHAST, and ESD HBM ≥2 kV.
100 % R_g and UIS Tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for reliability in transient-rich environments.
TrenchFET® Architecture	Optimized cell pitch and trench depth yield 20 % lower R_DS(on) × Q_g figure-of-merit vs. planar MOSFETs at same voltage class.
Junction-to-Foot Thermal Resistance	R_thJF = 30 °C/W - Enables efficient heat transfer from die to copper pad, supporting >1.6 W dissipation at 125 °C case temperature.
Low Threshold Voltage Spread	V_GS(th) = 1.5–2.5 V - Tight distribution ensures consistent turn-on across production lots, simplifying gate driver design.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive Body Control Module (BCM) Relay Driver
Use Scenario: Driving 12 V solenoid-type fuel injectors with PWM frequencies up to 2 kHz in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side or low-side switch controlling injector coil current; handles repetitive 22 A pulsed drain current (I_DM) during injection events. Use Value: 24 mJ avalanche energy rating eliminates need for external flyback diodes, reducing BOM count and PCB area in space-constrained ECU designs.	Use Scenario: Switching 12 V relays for headlight, wiper, or HVAC fan control in BCMs operating at ambient temperatures up to 85 °C. IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (<30 ns) to minimize contact arcing and extend relay mechanical life. Use Value: R_DS(on) of 21.3 mΩ at 4.5 V gate drive allows direct MCU GPIO control, eliminating discrete level shifters and reducing system latency.
Transmission Control Module (TCM) Solenoid Valve Driver	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: Controlling proportional pressure solenoids in 8-speed automatic transmissions requiring precise current regulation from 0.5 A to 3 A. IC Role / Device Role / Timing Role: Current-regulated switch in closed-loop analog driver stage; operates continuously at T_J = 150 °C during peak torque conditions. Use Value: Stable R_DS(on) temperature coefficient (normalized to 1.7× at 175 °C) enables accurate current sensing without dynamic calibration across temperature.	Use Scenario: Half-bridge phase leg in 12 V EPS motor controllers handling bidirectional 6.3 A source current (I_S) during regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; conducts reverse diode current during freewheeling intervals with V_SD ≤1.2 V. Use Value: 6.3 A continuous source current rating supports high-duty-cycle freewheeling without thermal derating, improving EPS responsiveness and efficiency.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM) Relay Driver

Use Scenario: Driving 12 V solenoid-type fuel injectors with PWM frequencies up to 2 kHz in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling injector coil current; handles repetitive 22 A pulsed drain current (I_DM) during injection events.

Use Value: 24 mJ avalanche energy rating eliminates need for external flyback diodes, reducing BOM count and PCB area in space-constrained ECU designs.

Use Scenario: Switching 12 V relays for headlight, wiper, or HVAC fan control in BCMs operating at ambient temperatures up to 85 °C.

IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (<30 ns) to minimize contact arcing and extend relay mechanical life.

Use Value: R_DS(on) of 21.3 mΩ at 4.5 V gate drive allows direct MCU GPIO control, eliminating discrete level shifters and reducing system latency.

Transmission Control Module (TCM) Solenoid Valve Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Controlling proportional pressure solenoids in 8-speed automatic transmissions requiring precise current regulation from 0.5 A to 3 A.

IC Role / Device Role / Timing Role: Current-regulated switch in closed-loop analog driver stage; operates continuously at T_J = 150 °C during peak torque conditions.

Use Value: Stable R_DS(on) temperature coefficient (normalized to 1.7× at 175 °C) enables accurate current sensing without dynamic calibration across temperature.

Use Scenario: Half-bridge phase leg in 12 V EPS motor controllers handling bidirectional 6.3 A source current (I_S) during regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; conducts reverse diode current during freewheeling intervals with V_SD ≤1.2 V.

Use Value: 6.3 A continuous source current rating supports high-duty-cycle freewheeling without thermal derating, improving EPS responsiveness and efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N3LLH6	30 V, R_DS(on) = 1.35 mΩ @ 10 V, but in LFPAK56 package (larger footprint, higher thermal mass); not AEC-Q101 qualified.	Higher current capacity (135 A) suits 48 V mild-hybrid systems-not drop-in for 12 V ECU space constraints.	Select only if board redesign permits larger package and AEC-Q101 is not required.
ON Semiconductor NTMFS4C09NT1G	30 V, R_DS(on) = 1.9 mΩ @ 10 V, SO-8FL package; AEC-Q101 qualified but higher Q_g (27 nC) increases switching loss.	Better conduction loss but slower switching limits use in >10 kHz PWM applications like EPS motor control.	Prefer for static switching where low R_DS(on) dominates; avoid where fast transition times are critical.

Compared with STL135N3LLH6 and NTMFS4C09NT1G, SQ3410EV-T1_GE3 offers optimal balance of AEC-Q101 compliance, TSOP-6 compactness, 21.3 mΩ R_DS(on) at 4.5 V, and 24 mJ avalanche rating-making it uniquely suited for space- and reliability-constrained 12 V automotive power stages without layout or qualification compromise.

Availability

SQ3410EV-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, transmission control modules, and electric power steering systems requiring stable component supply across automotive production lifecycles.

Supply support for SQ3410EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3410EV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for under-hood power switching where high temperature operation, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum junction temperature rating for SQ3410EV-T1_GE3?

The SQ3410EV-T1_GE3 has a specified operating junction temperature range of −55 °C to +175 °C, fully compliant with AEC-Q101 requirements for under-hood automotive applications. This rating is validated through high-temperature operating life (HTOL) testing and confirmed in the official Vishay datasheet (S22-0167-Rev. B).

Is SQ3410EV-T1_GE3 qualified to AEC-Q101 standards?

Yes, SQ3410EV-T1_GE3 is explicitly AEC-Q101 qualified as stated in the Vishay datasheet feature list and product summary. Qualification includes stress tests such as high-temperature reverse bias, temperature cycling, and unclamped inductive switching-ensuring suitability for automotive safety-critical functions.

What is the gate threshold voltage range for SQ3410EV-T1_GE3?

The gate threshold voltage (V_GS(th)) for SQ3410EV-T1_GE3 is specified as 1.5 V minimum, 2.0 V typical, and 2.5 V maximum at I_D = 250 μA. This tight distribution supports predictable turn-on behavior with 3.3 V or 5 V microcontroller outputs without external level shifting.

Does SQ3410EV-T1_GE3 have integrated avalanche ruggedness?

Yes, SQ3410EV-T1_GE3 is rated for single-pulse avalanche energy (E_AS) of 24 mJ at L = 0.1 mH, with I_AS = 22 A. This capability is 100 % tested per unit and enables reliable operation in inductive load switching without external protection components.

What package type does SQ3410EV-T1_GE3 use, and what are its key mechanical dimensions?

SQ3410EV-T1_GE3 uses the TSOP-6 surface-mount package (JEDEC MO-193C), measuring 3.05 mm × 2.85 mm × 1.05 mm. Pin configuration is Drain (pins 1,2,5,6), Gate (pin 3), and Source (pin 4), with four parallel drain leads for reduced inductance and improved thermal conduction to the PCB.

SQ3410EV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1005 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3410EV-T1_GE3 FAQ

1.How can I place an order for SQ3410EV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3410EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3410EV-T1_GE3 reliable?

The price and inventory of SQ3410EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3410EV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3410EV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3410EV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3410EV-T1_GE3?

SQ3410EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3410EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3410EV-T1_GE3?

For technical support, including SQ3410EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3410EV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3410EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3410EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3410EV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3410EV-T1_GE3?

All SQ3410EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3410EV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3410EV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3410EV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …