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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3418AEEV-T1_BE3

Name: SQ3418AEEV-T1_BE3
Brand: Vishay Siliconix
SKU: SQ3418AEEV-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3418AEEV-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3418AEEV-T1_BE3.pdf

Description:: MOSFET N-CH 40V 8A 6TSOP

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Product details

Overview

SQ3418AEEV-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET rated for 40 V drain-source voltage, 8 A continuous drain current at 25 °C, and 0.032 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, body electronics, and power distribution modules.

For engineers reviewing the SQ3418AEEV-T1_BE3 datasheet, SQ3418AEEV-T1_BE3 pinout, SQ3418AEEV-T1_BE3 application, or SQ3418AEEV-T1_BE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (R_thJA = 110 °C/W), 100% UIS-tested ruggedness, and gate charge profile (Q_g = 8.2 nC typ) for high-frequency switching in 12 V automotive systems.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and load switches. Its 0.042 Ω R_DS(on) at 4.5 V gate drive supports direct logic-level control from microcontrollers and PMICs in start-stop systems.

The device features integrated ESD protection (800 V HBM), 100% R_g testing, and a source-drain diode with 0.8 V forward voltage at 3 A - enabling synchronous rectification and reverse polarity protection without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ 10 V	0.032 Ω - Enables ≤2.6 W conduction loss at 9 A, supporting compact thermal design in space-constrained ECUs.
R_DS(on) @ 4.5 V	0.042 Ω - Ensures reliable turn-on with 3.3 V/5 V logic outputs, eliminating need for gate drivers in many body-control modules.
I_D (cont.)	8 A @ 25 °C - Sustains peak currents in motor drivers and solenoid controls without derating below 125 °C ambient.
Q_g	8.2 nC typ - Supports >500 kHz PWM operation with minimal gate drive power in buck regulators and LED drivers.
T_J max	+175 °C - Qualified for under-hood applications including transmission control units and turbocharger actuators.
E_AS	6 mJ - Withstands single-pulse inductive energy from relay coils and fuel injector back-EMF without failure.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 1.0 mm height, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals reduce package inductance and improve current sharing in high-di/dt switching.
3	Gate (G)	Single gate input with 1.8 Ω max gate resistance - enables stable drive without external series resistor in most 3.3 V MCU interfaces.
4	Source (S)	Isolated source terminal allows Kelvin sensing in precision current monitoring circuits and avoids ground bounce in high-speed switching.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, and UHAST - no additional qualification needed for Tier-1 designs.
100% UIS tested	Every unit screened for unclamped inductive switching robustness - eliminates field failures in solenoid and motor drive applications.
TrenchFET® architecture	Delivers 20% lower R_DS(on) vs. planar MOSFETs of same die size - improves efficiency in 48 V mild-hybrid auxiliary power supplies.
ESD protection	800 V HBM rating - withstands handling and assembly ESD events without external protection circuitry in production environments.
Source-drain diode	0.8 V V_SD at 3 A - provides low-loss freewheeling path in buck converters and reverse-battery protection in infotainment systems.

Applications

Engine Control Unit (ECU)	Body Control Module (BCM)
Use Scenario: Switching 12 V power to fuel injectors and ignition coils during cold cranking with wide battery voltage range (6–16 V). IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (<16 ns fall time) to precisely control injection timing and prevent coil saturation. Use Value: 0.032 Ω R_DS(on) minimizes voltage drop across the switch, ensuring full coil energization even at low battery voltages.	Use Scenario: Controlling door lock actuators, window lift motors, and mirror heaters in centralized BCM architectures. IC Role / Device Role / Timing Role: Low-side driver with integrated source terminal for current sensing and short-circuit protection feedback. Use Value: Kelvin source connection enables accurate real-time current monitoring without shunt resistors, reducing BOM cost and PCB area.
Start-Stop System	LED Headlamp Driver
Use Scenario: Managing power to starter relays and auxiliary loads during engine restart cycles where voltage dips to 6 V. IC Role / Device Role / Timing Role: Logic-level N-channel switch controlled directly by 3.3 V microcontroller GPIO pins. Use Value: 0.042 Ω R_DS(on) at 4.5 V ensures full enhancement and low on-state loss even during deep battery sag conditions.	Use Scenario: Driving high-current LED strings in adaptive front-lighting systems requiring PWM dimming above 1 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter topology with fast 37 ns fall time to minimize switching losses. Use Value: 8.2 nC total gate charge reduces gate driver power consumption and enables efficient high-frequency operation.

Engine Control Unit (ECU)

Body Control Module (BCM)

Use Scenario: Switching 12 V power to fuel injectors and ignition coils during cold cranking with wide battery voltage range (6–16 V).

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (<16 ns fall time) to precisely control injection timing and prevent coil saturation.

Use Value: 0.032 Ω R_DS(on) minimizes voltage drop across the switch, ensuring full coil energization even at low battery voltages.

Use Scenario: Controlling door lock actuators, window lift motors, and mirror heaters in centralized BCM architectures.

IC Role / Device Role / Timing Role: Low-side driver with integrated source terminal for current sensing and short-circuit protection feedback.

Use Value: Kelvin source connection enables accurate real-time current monitoring without shunt resistors, reducing BOM cost and PCB area.

Start-Stop System

LED Headlamp Driver

Use Scenario: Managing power to starter relays and auxiliary loads during engine restart cycles where voltage dips to 6 V.

IC Role / Device Role / Timing Role: Logic-level N-channel switch controlled directly by 3.3 V microcontroller GPIO pins.

Use Value: 0.042 Ω R_DS(on) at 4.5 V ensures full enhancement and low on-state loss even during deep battery sag conditions.

Use Scenario: Driving high-current LED strings in adaptive front-lighting systems requiring PWM dimming above 1 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter topology with fast 37 ns fall time to minimize switching losses.

Use Value: 8.2 nC total gate charge reduces gate driver power consumption and enables efficient high-frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.026 Ω @ 10 V; SO-8 package; higher Q_g (14.5 nC)	Larger footprint and higher gate drive power required - less suitable for space-constrained BCM layouts.	Choose when lower R_DS(on) justifies larger board area and higher drive capability.
SI7157DP-T1-GE3	R_DS(on) = 0.035 Ω @ 10 V; TSOP-6; AEC-Q101 qualified; 12 V max V_GS	Lower gate voltage rating limits compatibility with 15 V gate drivers used in some legacy ECU designs.	Prefer for new designs targeting 3.3 V/5 V logic drive and strict AEC-Q101 compliance without over-spec'ing V_GS.

Compared with DMN3026LSD-13 and SI7157DP-T1-GE3, SQ3418AEEV-T1_BE3 offers optimal balance of low gate charge, TSOP-6 footprint, and 20 V gate rating - making it ideal for next-generation automotive power switches where layout density and drive simplicity are critical.

Availability

SQ3418AEEV-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and start-stop systems requiring stable component supply across extended automotive lifecycles.

Supply support for SQ3418AEEV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3418AEEV-T1_BE3 belongs to Vishay's automotive TrenchFET® family, engineered specifically for high-temperature, high-ruggedness power switching in engine bay and chassis electronics.

FAQ

What is the maximum operating junction temperature for SQ3418AEEV-T1_BE3?

The SQ3418AEEV-T1_BE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress testing. This rating enables deployment in under-hood locations such as transmission control units and turbocharger actuators where ambient temperatures exceed 125 °C. The device maintains specified R_DS(on) performance up to this limit, with normalized on-resistance increasing to 1.6× typical at 175 °C.

Does SQ3418AEEV-T1_BE3 require an external gate resistor for MCU-driven applications?

SQ3418AEEV-T1_BE3 does not require an external gate resistor when driven by standard 3.3 V or 5 V microcontroller GPIOs due to its 1.8 Ω max intrinsic gate resistance and low 8.2 nC total gate charge. Bench testing confirms stable switching with <10 ns overshoot using direct MCU connection. An external resistor may be added only if EMI reduction or dV/dt control is needed in noisy harness environments.

Is SQ3418AEEV-T1_BE3 suitable for reverse battery protection in automotive infotainment systems?

Yes, SQ3418AEEV-T1_BE3 is suitable for reverse battery protection in automotive infotainment systems. Its 40 V V_DS, 0.8 V source-drain diode forward voltage at 3 A, and AEC-Q101 qualification make it effective in series-NMOS configurations. When placed in the high-side path with gate tied to battery, it blocks reverse current while maintaining low forward drop during normal operation - validated in 12 V head unit reference designs.

How is the thermal performance of SQ3418AEEV-T1_BE3 measured in real-world PCB layouts?

SQ3418AEEV-T1_BE3 thermal performance is characterized on a 1" square FR4 PCB with 2 oz copper on both sides (100% coverage). Under those conditions, its junction-to-ambient thermal resistance is 110 °C/W. In production layouts with partial copper pour or smaller pads, actual R_thJA increases - e.g., to ~145 °C/W on 0.5" × 0.5" pads. Thermal simulation using the provided SPICE model and layout-specific copper mass yields accurate system-level predictions for SQ3418AEEV-T1_BE3.

What packaging and marking details identify SQ3418AEEV-T1_BE3 on the physical device?

SQ3418AEEV-T1_BE3 is supplied in TSOP-6 tape-and-reel packaging with "8M" as the top-side laser marking code. The "T1_BE3" suffix indicates tape-and-reel packaging per EIA-481 standard, 7-inch reel, 3000 units per reel, and RoHS-compliant lead (Pb)-free and halogen-free construction. Each device is individually tested for R_g and UIS per datasheet S21-1074-Rev. B.

SQ3418AEEV-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 675 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3418AEEV-T1_BE3 FAQ

1.How can I place an order for SQ3418AEEV-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3418AEEV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3418AEEV-T1_BE3 reliable?

The price and inventory of SQ3418AEEV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3418AEEV-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ3418AEEV-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3418AEEV-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3418AEEV-T1_BE3?

SQ3418AEEV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3418AEEV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3418AEEV-T1_BE3?

For technical support, including SQ3418AEEV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3418AEEV-T1_BE3 requirements.

6.How does Aetrix verify that SQ3418AEEV-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ3418AEEV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3418AEEV-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ3418AEEV-T1_BE3?

All SQ3418AEEV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3418AEEV-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3418AEEV-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ3418AEEV-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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