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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3418AEEV-T1_GE3

Name: SQ3418AEEV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3418AEEV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3418AEEV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3418AEEV-T1_GE3.pdf

Description:: MOSFET N-CHANNEL 30V 7.8A 6TSOP

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Product details

Overview

SQ3418AEEV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 8 A continuous drain current at 25 °C, and R_DS(on) of 0.032 Ω at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control and power distribution applications.

For engineers reviewing the SQ3418AEEV-T1_GE3 datasheet, SQ3418AEEV-T1_GE3 pinout, SQ3418AEEV-T1_GE3 application, or SQ3418AEEV-T1_GE3 equivalent, key selection criteria include its TSOP-6 package thermal resistance (R_thJF = 30 °C/W), 100 % R_g and UIS tested reliability, and 800 V typical ESD protection - critical for automotive body electronics and load switching designs.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and high-side/low-side driver stages. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the 528 pF input capacitance and 3.5 nC total gate charge support efficient PWM operation at frequencies up to several hundred kHz.

The device integrates a robust intrinsic body diode (V_SD = 0.8–1.2 V at 3 A) and is fully characterized for unclamped inductive switching (UIS) and avalanche energy (E_AS = 1.2 mJ), making it suitable for inductive load management without external flyback protection in many automotive circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V automotive systems with load dump margin
R_DS(on) @ 10 V	0.032 Ω - Enables ≤2.6 W conduction loss at 9 A, supporting compact thermal design
I_D (cont.)	8 A @ T_C = 25 °C - Sustained current capability on standard FR-4 PCB with 1"² copper
T_J max	+175 °C - Qualified for engine compartment placement per AEC-Q101 stress testing
Q_g	3.5 nC - Low gate charge reduces driver power and switching losses in 100–500 kHz SMPS
E_AS	1.2 mJ - Avalanche-rated for reliable operation during inductive turn-off transients
R_thJF	30 °C/W - Junction-to-drain thermal path enables direct heatsinking via PCB drain pads

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1–2–5–6 are internally connected to drain; Pin 3 is gate; Pin 4 is source.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	High-current output node; electrically and thermally tied to exposed pad
3	Gate (G)	Control terminal requiring <2.5 V threshold; sensitive to ESD (800 V typical)
4	Source (S)	Power return path; referenced for gate drive and current sensing

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and UHAST
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® architecture	Optimized cell layout delivering 20 % lower R_DS(on) vs. planar MOSFETs at same die size
Exposed drain pad	Enables low R_thJF (30 °C/W) and supports >5 W power dissipation with minimal PCB area
800 V typical ESD protection	Reduces need for external TVS on gate in assembly-line handling and module integration

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Control
Use Scenario: High-speed switching of 12 V inductive fuel injectors with 2–5 ms pulse width and 10–20 Hz repetition. IC Role / Device Role / Timing Role: Low-side switch providing precise current control and fast turn-off to minimize fuel misting. Use Value: R_DS(on) = 0.032 Ω and t_f = 7 ns ensure <100 mW conduction loss and <1 μs current decay, meeting OEM emission timing tolerances.	Use Scenario: PWM-controlled 12 V DC blower motor in cabin air handling units with variable speed and reverse polarity braking. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch enabling bidirectional motor control and regenerative braking. Use Value: 175 °C T_J rating and 1.2 mJ E_AS allow safe operation during stall conditions and inductive kickback without snubber circuits.
Body Control Module (BCM) Power Distribution	ADAS Camera Power Sequencing
Use Scenario: Solid-state replacement of mechanical relays for lighting, window lift, and seat actuator loads in BCMs. IC Role / Device Role / Timing Role: Load switch managing up to 8 A resistive/inductive loads with controlled slew rate and overcurrent detection interface. Use Value: TSOP-6 footprint and 30 °C/W R_thJF enable high-density routing and thermal management on space-constrained BCM PCBs.	Use Scenario: Controlled power-up/down sequencing of image sensor and ISP in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Precision power switch ensuring clean voltage ramp and inrush current limiting during cold start. Use Value: V_GS(th) = 1.5–2.5 V allows direct interface with 3.3 V microcontroller GPIO, eliminating level-shifter components.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Control

Use Scenario: High-speed switching of 12 V inductive fuel injectors with 2–5 ms pulse width and 10–20 Hz repetition.

IC Role / Device Role / Timing Role: Low-side switch providing precise current control and fast turn-off to minimize fuel misting.

Use Value: R_DS(on) = 0.032 Ω and t_f = 7 ns ensure <100 mW conduction loss and <1 μs current decay, meeting OEM emission timing tolerances.

Use Scenario: PWM-controlled 12 V DC blower motor in cabin air handling units with variable speed and reverse polarity braking.

IC Role / Device Role / Timing Role: High-current half-bridge low-side switch enabling bidirectional motor control and regenerative braking.

Use Value: 175 °C T_J rating and 1.2 mJ E_AS allow safe operation during stall conditions and inductive kickback without snubber circuits.

Body Control Module (BCM) Power Distribution

ADAS Camera Power Sequencing

Use Scenario: Solid-state replacement of mechanical relays for lighting, window lift, and seat actuator loads in BCMs.

IC Role / Device Role / Timing Role: Load switch managing up to 8 A resistive/inductive loads with controlled slew rate and overcurrent detection interface.

Use Value: TSOP-6 footprint and 30 °C/W R_thJF enable high-density routing and thermal management on space-constrained BCM PCBs.

Use Scenario: Controlled power-up/down sequencing of image sensor and ISP in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: Precision power switch ensuring clean voltage ramp and inrush current limiting during cold start.

Use Value: V_GS(th) = 1.5–2.5 V allows direct interface with 3.3 V microcontroller GPIO, eliminating level-shifter components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 10 V; no AEC-Q101 qualification; SO-8 package	Not approved for automotive safety-critical systems; limited to industrial or consumer-grade modules	Select only if AEC-Q101 compliance is not required and SO-8 layout is available
DMN3028LSD-13	R_DS(on) = 0.028 Ω @ 10 V; AEC-Q101 qualified; dual-N in SO-8	Offers dual configuration but requires board redesign; higher gate charge (5.2 nC)	Prefer when dual-switch topology or lower R_DS(on) justifies package and layout change

Compared with IRLML6344TRPBF and DMN3028LSD-13, the SQ3418AEEV-T1_GE3 delivers optimal balance of AEC-Q101 compliance, TSOP-6 space efficiency, and 3.5 nC gate charge - enabling simpler drive circuitry and smaller PCB area in single-switch automotive power nodes.

Availability

SQ3418AEEV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management subsystems, and ADAS power sequencing requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for SQ3418AEEV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3418AEEV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for under-hood and chassis-mounted power switching where high temperature, high reliability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum junction temperature rating for SQ3418AEEV-T1_GE3?

The SQ3418AEEV-T1_GE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress test conditions including high-temperature reverse bias and temperature cycling. This rating allows direct placement in high-ambient environments such as engine compartments, and the device maintains specified R_DS(on) and switching parameters up to this limit as confirmed in the Vishay datasheet revision A.

Is SQ3418AEEV-T1_GE3 pin-compatible with other TSOP-6 N-channel MOSFETs?

SQ3418AEEV-T1_GE3 follows the standard TSOP-6 pinout: pins 1, 2, 5, 6 = Drain; pin 3 = Gate; pin 4 = Source. While physical footprint matches common TSOP-6 devices, pin compatibility depends on internal connectivity - SQ3418AEEV-T1_GE3 uses quad-drain configuration, so verification against target layout and thermal pad alignment is required before substitution.

Does SQ3418AEEV-T1_GE3 require a gate resistor for automotive PWM applications?

Yes, SQ3418AEEV-T1_GE3 benefits from an external gate resistor (typically 5–22 Ω) to control dV/dt and suppress ringing in automotive PWM applications. Its low gate resistance (2.3 Ω typical) and 3.5 nC total gate charge make it responsive, but uncontrolled edge rates can cause EMI or shoot-through in half-bridge configurations - the datasheet recommends gate resistance selection based on driver strength and layout parasitics.

What is the avalanche energy rating of SQ3418AEEV-T1_GE3 and how is it validated?

The SQ3418AEEV-T1_GE3 is rated for 1.2 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, measured under standardized UIS test conditions. Vishay performs 100 % UIS testing on every production lot, confirming ruggedness against inductive turn-off transients - a requirement for automotive solenoid, injector, and motor control applications where snubbers are omitted for cost and space savings.

Can SQ3418AEEV-T1_GE3 be used with 3.3 V microcontroller GPIOs?

Yes, SQ3418AEEV-T1_GE3 has a gate threshold voltage range of 1.5–2.5 V, allowing full enhancement with 3.3 V logic-level drive. At V_GS = 4.5 V, it achieves R_DS(on) = 0.042 Ω - sufficient for most automotive low-power switching tasks. For highest efficiency, pairing with a dedicated gate driver is recommended, but direct MCU drive is viable for moderate-frequency, low-duty-cycle applications.

SQ3418AEEV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8A

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3.5 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 528 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3418AEEV-T1_GE3 FAQ

1.How can I place an order for SQ3418AEEV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3418AEEV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3418AEEV-T1_GE3 reliable?

The price and inventory of SQ3418AEEV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3418AEEV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3418AEEV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3418AEEV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3418AEEV-T1_GE3?

SQ3418AEEV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3418AEEV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3418AEEV-T1_GE3?

For technical support, including SQ3418AEEV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3418AEEV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3418AEEV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3418AEEV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3418AEEV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3418AEEV-T1_GE3?

All SQ3418AEEV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3418AEEV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3418AEEV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3418AEEV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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