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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3419AEEV-T1_BE3

Name: SQ3419AEEV-T1_BE3
Brand: Vishay Siliconix
SKU: SQ3419AEEV-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3419AEEV-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3419AEEV-T1_BE3.pdf

Description:: P-CHANNEL 40-V (D-S) 175C MOSFET

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Product details

Overview

SQ3419AEEV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -40 V drain-source voltage, 0.061 Ω R_DS(on) at -10 V V_GS, and -6.9 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, body electronics, and power distribution modules.

For engineers reviewing the SQ3419AEEV-T1_BE3 datasheet, SQ3419AEEV-T1_BE3 pinout, SQ3419AEEV-T1_BE3 application, or SQ3419AEEV-T1_BE3 equivalent, key selection criteria include its -40 V rating, low R_DS(on) at -4.5 V gate drive, 100 % R_g and UIS tested reliability, and TSOP-6 footprint compatibility with space-constrained automotive PCB layouts.

Technical Context

This device uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching in a thermally efficient TSOP-6 package. Its gate threshold voltage (V_GS(th)) ranges from -1.5 V to -2.5 V, enabling robust turn-on with standard 5 V or 3.3 V logic-level gate drivers in high-side load switch configurations.

The MOSFET integrates a built-in body diode with -0.75 V typical forward voltage at -1.6 A, supporting bidirectional current handling in reverse-polarity protection and H-bridge motor control. Thermal resistance R_thJA is 110 °C/W (PCB mount), and R_thJF is 30 °C/W (junction-to-foot), confirming suitability for surface-mount thermal management in under-hood environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin
R_DS(on) @ V_GS = -10 V	0.061 Ω - Enables ≤ 0.42 W conduction loss at -6.9 A, reducing heatsink requirements
R_DS(on) @ V_GS = -4.5 V	0.093 Ω - Ensures reliable operation with 5 V microcontroller GPIOs without level-shifting
I_D (continuous)	-6.9 A @ T_C = 25 °C - Supports medium-power loads like fuel pumps, HVAC actuators, and LED drivers
T_J range	-55 °C to +175 °C - Qualified for under-hood and transmission-control applications per AEC-Q101
Q_g (total)	12.5 nC max - Enables <34 ns turn-off delay with 1 Ω gate resistor, minimizing switching losses
E_AS	16.7 mJ - Withstands single-pulse avalanche energy during inductive load switching transients

Pinout & Package

TSOP-6 package (JEDEC MO-193C) with exposed drain pad for enhanced thermal performance; 3.05 mm × 2.85 mm footprint, 1.0 mm max height, and gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected to exposed copper pad - primary heat path to PCB; must be soldered to large copper pour
3	Gate (G)	Control terminal; requires ≤ ±12 V drive; 5.3 Ω typical gate resistance limits ringing
4	Source (S)	Reference node for gate drive; connects to load return or battery ground in high-side switch topology

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per Rev. D test plan
100 % R_g and UIS testing	Every unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® architecture	Reduces specific on-resistance by >25 % vs. planar P-channel MOSFETs of same die size
ESD protection	800 V HBM - eliminates need for external ESD clamps in infotainment and sensor interface modules
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912

Applications

Engine Control Unit (ECU) Power Switching	Automotive Body Control Module (BCM)
Use Scenario: High-side switching of solenoid valves and fuel injectors in 12 V engine management systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with fast turn-on/off controlled by MCU PWM output. Use Value: Low 0.093 Ω R_DS(on) at -4.5 V enables direct drive from 5 V microcontrollers, eliminating level shifters and reducing BOM count.	Use Scenario: Reverse-polarity protection and power gating for door lock actuators, window lift motors, and interior lighting. IC Role / Device Role / Timing Role: High-side switch configured with source tied to battery and drain to load, providing fail-safe isolation. Use Value: 175 °C rated junction temperature ensures stable operation in sealed BCM enclosures near HVAC ducts.
LED Headlamp Driver	Start-Stop System Load Management
Use Scenario: PWM dimming control of high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Synchronous rectifier and current sink in buck-based LED driver topology. Use Value: 16.7 mJ avalanche energy rating absorbs inductive kickback from LED string inductance during rapid PWM transitions.	Use Scenario: Controlled disconnection of non-critical loads (e.g., infotainment, seat heaters) during engine cranking to maintain 9 V minimum bus voltage. IC Role / Device Role / Timing Role: High-side power switch activated by vehicle network command to isolate subsystems. Use Value: -40 V V_DS rating accommodates ISO 7637-2 pulse 5a (load dump up to +35 V) with safety margin.

Engine Control Unit (ECU) Power Switching

Automotive Body Control Module (BCM)

Use Scenario: High-side switching of solenoid valves and fuel injectors in 12 V engine management systems.

IC Role / Device Role / Timing Role: P-channel MOSFET used as load switch with fast turn-on/off controlled by MCU PWM output.

Use Value: Low 0.093 Ω R_DS(on) at -4.5 V enables direct drive from 5 V microcontrollers, eliminating level shifters and reducing BOM count.

Use Scenario: Reverse-polarity protection and power gating for door lock actuators, window lift motors, and interior lighting.

IC Role / Device Role / Timing Role: High-side switch configured with source tied to battery and drain to load, providing fail-safe isolation.

Use Value: 175 °C rated junction temperature ensures stable operation in sealed BCM enclosures near HVAC ducts.

LED Headlamp Driver

Start-Stop System Load Management

Use Scenario: PWM dimming control of high-brightness LED arrays in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Synchronous rectifier and current sink in buck-based LED driver topology.

Use Value: 16.7 mJ avalanche energy rating absorbs inductive kickback from LED string inductance during rapid PWM transitions.

Use Scenario: Controlled disconnection of non-critical loads (e.g., infotainment, seat heaters) during engine cranking to maintain 9 V minimum bus voltage.

IC Role / Device Role / Timing Role: High-side power switch activated by vehicle network command to isolate subsystems.

Use Value: -40 V V_DS rating accommodates ISO 7637-2 pulse 5a (load dump up to +35 V) with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	TO-220 package, -100 V rating, 0.3 Ω R_DS(on) at -10 V - higher voltage but significantly higher on-resistance and larger footprint	Used in industrial power supplies; not AEC-Q101 qualified or optimized for automotive thermal cycling	Select only if higher voltage rating is mandatory and board space/thermal constraints are secondary
DMG2305UVT-7	TSOP-6, -20 V, 0.052 Ω R_DS(on) at -4.5 V - lower voltage rating, tighter gate threshold distribution, no AEC-Q101 certification	Common in consumer portable devices; lacks automotive reliability validation and 175 °C operation	Consider for cost-sensitive non-automotive designs where -20 V rating suffices and qualification is not required

Compared with IRF9530NPBF and DMG2305UVT-7, SQ3419AEEV-T1_BE3 uniquely balances AEC-Q101 compliance, -40 V rating, low R_DS(on) at logic-level drive, and TSOP-6 thermal efficiency-making it the only option qualified for under-hood high-reliability switching in modern 12 V/48 V hybrid architectures.

Availability

SQ3419AEEV-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and LED lighting systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ3419AEEV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SQ3419AEEV-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET product line, engineered specifically for high-side switching in harsh-environment vehicle subsystems where thermal stability and transient robustness are critical.

FAQ

What is the maximum gate-source voltage rating for SQ3419AEEV-T1_BE3?

The absolute maximum gate-source voltage (V_GS) for SQ3419AEEV-T1_BE3 is ±12 V. Exceeding this rating risks permanent gate oxide damage. Designers should ensure gate drive circuits limit transient overshoot using Zener clamps or resistive dividers, especially in noisy automotive environments where coupled noise may exceed specification limits. The SQ3419AEEV-T1_BE3 datasheet specifies this value in the Absolute Maximum Ratings table on page 1.

Is SQ3419AEEV-T1_BE3 suitable for high-side load switch applications?

Yes, SQ3419AEEV-T1_BE3 is explicitly designed for high-side load switching in automotive systems. Its P-channel configuration allows source connection to the positive rail and gate control via MCU GPIO or dedicated driver ICs. With -2.0 V typical V_GS(th) and low R_DS(on) at -4.5 V, the SQ3419AEEV-T1_BE3 achieves full enhancement using standard 5 V logic, eliminating need for charge pumps or level shifters in most implementations.

Does SQ3419AEEV-T1_BE3 have integrated ESD protection?

Yes, SQ3419AEEV-T1_BE3 features typical human-body-model (HBM) ESD protection of 800 V, as stated in the Features section of the Vishay datasheet. This internal protection reduces susceptibility to handling damage during assembly and improves field reliability in modules exposed to static-prone environments such as dashboard assemblies or service bay repairs. No external TVS diode is required solely for ESD mitigation when proper PCB layout practices are followed.

What is the thermal resistance from junction to ambient for SQ3419AEEV-T1_BE3?

The junction-to-ambient thermal resistance (R_thJA) for SQ3419AEEV-T1_BE3 is 110 °C/W under standard test conditions: mounted on a 1" × 1" FR4 PCB with 2 oz copper on both sides. This value assumes full soldering of the exposed drain pad to a thermal plane. In actual designs, R_thJA will improve with larger copper areas and multiple thermal vias - a key consideration for maintaining <175 °C T_J in sustained -6.9 A operation. The SQ3419AEEV-T1_BE3 datasheet reports this in the Thermal Resistance Ratings table.

How does SQ3419AEEV-T1_BE3 perform at elevated temperatures?

SQ3419AEEV-T1_BE3 maintains functional performance up to +175 °C junction temperature, with R_DS(on) increasing to 0.081 Ω at T_J = 175 °C and V_GS = -10 V. Its AEC-Q101 qualification confirms parametric stability across -55 °C to +175 °C, including gate threshold drift <±0.5 V and zero-gate-voltage leakage <150 μA at max temperature. These characteristics make SQ3419AEEV-T1_BE3 suitable for under-hood applications where ambient temperatures exceed 125 °C.

SQ3419AEEV-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 6.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 61mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 975 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3419AEEV-T1_BE3 FAQ

1.How can I place an order for SQ3419AEEV-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3419AEEV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3419AEEV-T1_BE3 reliable?

The price and inventory of SQ3419AEEV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3419AEEV-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ3419AEEV-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3419AEEV-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3419AEEV-T1_BE3?

SQ3419AEEV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3419AEEV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3419AEEV-T1_BE3?

For technical support, including SQ3419AEEV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3419AEEV-T1_BE3 requirements.

6.How does Aetrix verify that SQ3419AEEV-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ3419AEEV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3419AEEV-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ3419AEEV-T1_BE3?

All SQ3419AEEV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3419AEEV-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3419AEEV-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ3419AEEV-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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