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Vishay Siliconix SQ3419EV-T1_BE3
- Part No.:
- SQ3419EV-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3419EV-T1_BE3.pdf
- Description:
- MOSFET P-CH 40V 6.9A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,825
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Product details
Overview
SQ3419EV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -40 V VDS, 0.058 Ω RDS(on) at VGS = -10 V, and -6.9 A continuous drain current at TC = 25 °C. It serves as a high-side load switch or reverse-polarity protection device in 12 V/24 V automotive power distribution systems.
For engineers reviewing the SQ3419EV-T1_BE3 datasheet, SQ3419EV-T1_BE3 pinout, SQ3419EV-T1_BE3 application, or SQ3419EV-T1_BE3 equivalent, key selection criteria include AEC-Q101 qualification, 175 °C maximum junction temperature, RDS(on) stability over temperature, avalanche energy rating (EAS = 13.6 mJ), and gate charge (Qg = 7.5–11.3 nC) for fast switching in space-constrained modules.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and robust avalanche capability. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard automotive logic-level gate drivers, while its 100 % Rg and UIS testing guarantees production consistency under transient stress.
The device features integrated body diode with VSD = -0.8 to -1.2 V at IF = -1.6 A and supports pulsed drain currents up to -27 A. Thermal design is enabled by validated RthJA = 110 °C/W (PCB mount) and RthJF = 30 °C/W (junction-to-foot), supporting high-power density layouts in engine control units and body electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage for 24 V automotive systems with load dump margin |
| RDS(on) @ VGS = -10 V | 0.058 Ω - Enables ≤ 2.8 W conduction loss at -6.9 A, critical for thermally constrained modules |
| ID (continuous) | -6.9 A @ TC = 25 °C - Sustained current handling for high-side battery disconnect switches |
| EAS | 13.6 mJ - Confirmed single-pulse avalanche energy for inductive load switching reliability |
| Qg | 7.5–11.3 nC - Gate drive energy enabling <40 ns total switching time with 1 Ω driver |
| TJ max | +175 °C - Supports operation in under-hood environments without derating penalties |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and UHAST |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, lead (Pb)-free and halogen-free. Optimized for automated placement and reflow soldering on double-sided FR4 PCBs with 2 oz copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; electrically tied internally; requires thermal pad connection to PCB ground plane |
| 3 | Gate (G) | Control input; 2.6–7.9 Ω gate resistance limits ringing and EMI during switching |
| 4 | Source (S) | Reference node for gate drive; connects to load side in high-side configuration or battery negative in reverse polarity protection |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| 100 % Rg and UIS tested | Ensures every unit meets gate resistance tolerance (2.6–7.9 Ω) and survives single-pulse avalanche stress |
| Body diode forward voltage | VSD = -0.8 to -1.2 V at -1.6 A enables efficient freewheeling in DC motor drives without external diode |
| Thermal performance | RthJF = 30 °C/W allows direct heat transfer from drain terminals to PCB copper, reducing thermal bottleneck |
| Marking code | "8V" laser marking enables traceability and rapid visual identification on assembled boards |
Applications
| Engine Control Unit Power Switching | Automotive Body Control Module |
|---|---|
|
Use Scenario: High-side switching of fuel pump, radiator fan, or injector drivers in ECU submodules. IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled power rail switch with fast turn-off (<40 ns fall time) to prevent back-EMF damage. Use Value: RDS(on) stability up to 175 °C avoids thermal runaway during sustained engine operation; EAS rating absorbs inductive kickback. |
Use Scenario: Reverse-polarity protection and load switching for door module actuators, lighting, and window lift motors. IC Role / Device Role / Timing Role: Bidirectional protection switch placed between battery input and downstream 12 V rail. Use Value: Low VGS(th) (-1.5 to -2.5 V) ensures full enhancement with microcontroller GPIO; -55 to +175 °C operating range covers cabin-to-trunk ambient extremes. |
| Start-Stop System Battery Management | ADAS Camera Power Sequencing |
|
Use Scenario: Controlled battery isolation during engine cranking and regenerative braking events in 12 V start-stop systems. IC Role / Device Role / Timing Role: High-side switch enabling precise timing of power-up/down sequences for auxiliary ECUs. Use Value: Qg = 7.5–11.3 nC allows clean, low-overshoot switching with minimal gate driver power; AEC-Q101 qualification ensures field reliability over 15-year vehicle life. |
Use Scenario: Power enable/disable for CMOS image sensors and ISP processors in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Low-noise, low-leakage power switch minimizing standby current (<1 μA IDSS at -40 V). Use Value: Ultra-low IDSS (≤ -150 μA at 175 °C) prevents battery drain during long-term parking; compact TSOP-6 footprint saves board space in tight camera housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PBF | RDS(on) = 0.065 Ω @ -10 V; RthJA = 125 °C/W; not AEC-Q101 qualified | Limited to industrial/commercial use; lacks automotive stress screening and high-temp validation | Acceptable for non-safety-critical 12 V systems where qualification is not mandated |
| DMG2307L-7 | RDS(on) = 0.075 Ω @ -4.5 V; Qg = 5.5 nC; AEC-Q101 qualified; SOT-23-6 package | Smaller footprint but higher RDS(on); lower power dissipation limit due to smaller thermal mass | Better for ultra-compact designs with moderate current (<4 A); less suitable for sustained -6.9 A loads |
Compared with IRF7425PBF and DMG2307L-7, SQ3419EV-T1_BE3 delivers superior thermal robustness (RthJF = 30 °C/W), higher avalanche energy (13.6 mJ), and tighter RDS(on) spec at elevated temperature-making it optimal for high-reliability automotive power switching where junction heating and transient immunity are critical.
Availability
SQ3419EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and ADAS power management requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQ3419EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ3419EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-side switching, reverse-battery protection, and load-dump tolerant power distribution in harsh-temperature vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQ3419EV-T1_BE3 at 125 °C case temperature?
The SQ3419EV-T1_BE3 supports -4 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained high-temperature operation, and must be verified against actual board layout and airflow conditions when designing for under-hood applications.
Is SQ3419EV-T1_BE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQ3419EV-T1_BE3 is AEC-Q101 qualified. This includes stress tests such as high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling (TC), unbiased highly accelerated stress test (uHAST), and electrostatic discharge (HBM/MM). Full qualification data is documented in Vishay's reliability report for this part number.
What is the typical gate-source threshold voltage range for SQ3419EV-T1_BE3, and how does it affect drive compatibility?
The SQ3419EV-T1_BE3 has a VGS(th) range of -1.5 V to -2.5 V (min/typ/max at ID = -250 μA). This ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO outputs, eliminating need for level-shifting circuits in most automotive body control applications.
Can SQ3419EV-T1_BE3 be used in reverse-polarity protection circuits, and what design considerations apply?
Yes, SQ3419EV-T1_BE3 is commonly used for reverse-polarity protection due to its P-channel topology and low RDS(on). Key considerations include ensuring gate is pulled to battery positive via resistor when input is reversed, verifying VGS stays within ±20 V during transients, and confirming the body diode orientation blocks reverse current flow in normal operation.
What is the safe operating area (SOA) limitation for SQ3419EV-T1_BE3 at DC operation, and how is it determined?
At DC, the SOA of SQ3419EV-T1_BE3 is limited by RDS(on) and thermal resistance. With RDS(on) = 0.058 Ω and RthJA = 110 °C/W, maximum sustainable DC current is ~3.2 A (assuming 100 °C rise above 25 °C ambient). The published SOA graph on page 5 of the datasheet confirms this boundary under single-pulse and DC conditions.
SQ3419EV-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.3 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 990 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3419EV-T1_BE3 FAQ
1.How can I place an order for SQ3419EV-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3419EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3419EV-T1_BE3 reliable?
The price and inventory of SQ3419EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3419EV-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ3419EV-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3419EV-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3419EV-T1_BE3?
SQ3419EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3419EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3419EV-T1_BE3?
For technical support, including SQ3419EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3419EV-T1_BE3 requirements.
6.How does Aetrix verify that SQ3419EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ3419EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3419EV-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ3419EV-T1_BE3?
All SQ3419EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3419EV-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3419EV-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ3419EV-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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