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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3419EV-T1_GE3

Name: SQ3419EV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3419EV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3419EV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3419EV-T1_GE3.pdf

Description:: MOSFET P-CH 40V 6.9A 6TSOP

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Product details

Overview

SQ3419EV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -40 V drain-source voltage, 0.058 Ω R_DS(on) at V_GS = -10 V, and -6.9 A continuous drain current at T_C = 25 °C. It serves as a high-reliability load switch or reverse-polarity protection device in 12 V automotive power distribution systems.

For engineers reviewing the SQ3419EV-T1_GE3 datasheet, SQ3419EV-T1_GE3 pinout, SQ3419EV-T1_GE3 application, or SQ3419EV-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, -1.5 V to -2.5 V gate threshold voltage range, and verified single-pulse avalanche energy of 13.6 mJ - all critical for under-hood power control designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with tight parametric distribution across temperature. Its gate threshold voltage (V_GS(th)) is specified between -1.5 V and -2.5 V at I_D = -250 μA, enabling robust turn-on with standard 5 V or 3.3 V logic-level gate drive in high-side switching configurations.

The device integrates a body diode with forward voltage of -0.8 V to -1.2 V at I_F = -1.6 A and V_GS = 0 V, and supports pulsed drain currents up to -27 A. Thermal design is enabled by R_thJA = 110 °C/W (PCB mount) and R_thJF = 30 °C/W (junction-to-foot), reflecting optimized thermal path through the exposed drain paddle.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V automotive battery systems with load dump margin
R_DS(on) @ V_GS = -10 V	0.058 Ω - Enables ≤ 2.8 W conduction loss at -6.9 A, supporting compact thermal layout
I_D (continuous)	-6.9 A @ T_C = 25 °C - Rated current for sustained operation with heatsinked PCB mounting
V_GS(th)	-1.5 to -2.5 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO without level shifting
E_AS	13.6 mJ - Confirmed single-pulse avalanche capability for inductive load switching safety
T_J(max)	+175 °C - Supports operation in engine compartment environments per AEC-Q101 stress testing
Q_g	7.5–11.3 nC - Low gate charge enables fast switching with minimal driver power dissipation

Pinout & Package

TSOP-6 surface-mount package with exposed drain paddle for thermal and electrical performance; dimensions per JEDEC MO-193C (3.05 mm × 2.85 mm × 1.05 mm).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected to exposed paddle; primary current path and thermal conduction path to PCB
3	Gate (G)	Control terminal requiring < ±100 nA leakage; sensitive to ESD; drives channel inversion
4	Source (S)	Reference node for gate drive; connects to load return or ground in high-side configuration

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, HTRB, and UHAST per Rev. D requirements
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® technology	Enables lower R_DS(on) per die area vs. planar MOSFETs, improving power density in space-constrained modules
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Protecting infotainment head units and ADAS ECUs from battery misconnection during service or jump-start events. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with battery input rail. Use Value: Eliminates 0.3–0.7 V diode drop, preserving system voltage margin while delivering full -6.9 A continuous current at 175 °C junction temperature.	Use Scenario: Controlled power-up sequencing of fuel pump drivers or HVAC blower motors in engine control modules. IC Role / Device Role / Timing Role: High-side switch enabling microcontroller-driven enable/disable with fast turn-on (<12 ns delay) and low R_DS(on). Use Value: Reduces conduction losses by >70 % versus mechanical relay, enabling silent, wear-free operation with integrated overtemperature shutdown margin.
DC-DC Converter Synchronous Rectifier	Automotive LED Headlamp Dimming
Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 5 V buck-boost converters for telematics gateways. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in discontinuous conduction mode with body diode commutation. Use Value: Achieves <0.092 Ω R_DS(on) at V_GS = -4.5 V, reducing rectifier losses by 40 % compared to Schottky diodes at 2 A load.	Use Scenario: PWM-controlled current regulation for adaptive front-lighting system (AFS) matrix LED clusters. IC Role / Device Role / Timing Role: High-speed switching element modulating LED string current with <36 ns rise time and <47 ns fall time. Use Value: Supports >10 kHz PWM dimming without audible noise or thermal derating, maintaining stable R_DS(on) up to 150 °C junction temperature.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Protecting infotainment head units and ADAS ECUs from battery misconnection during service or jump-start events.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with battery input rail.

Use Value: Eliminates 0.3–0.7 V diode drop, preserving system voltage margin while delivering full -6.9 A continuous current at 175 °C junction temperature.

Use Scenario: Controlled power-up sequencing of fuel pump drivers or HVAC blower motors in engine control modules.

IC Role / Device Role / Timing Role: High-side switch enabling microcontroller-driven enable/disable with fast turn-on (<12 ns delay) and low R_DS(on).

Use Value: Reduces conduction losses by >70 % versus mechanical relay, enabling silent, wear-free operation with integrated overtemperature shutdown margin.

DC-DC Converter Synchronous Rectifier

Automotive LED Headlamp Dimming

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 5 V buck-boost converters for telematics gateways.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in discontinuous conduction mode with body diode commutation.

Use Value: Achieves <0.092 Ω R_DS(on) at V_GS = -4.5 V, reducing rectifier losses by 40 % compared to Schottky diodes at 2 A load.

Use Scenario: PWM-controlled current regulation for adaptive front-lighting system (AFS) matrix LED clusters.

IC Role / Device Role / Timing Role: High-speed switching element modulating LED string current with <36 ns rise time and <47 ns fall time.

Use Value: Supports >10 kHz PWM dimming without audible noise or thermal derating, maintaining stable R_DS(on) up to 150 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 0.055 Ω @ -10 V but rated only to +150 °C; not AEC-Q101 qualified	Lacks automotive qualification and 175 °C rating; suitable for industrial/commercial DC-DC use only	Select IRF7425PBF only if AEC-Q101 compliance and extended temperature operation are not required
DMN3026LFG-7	R_DS(on) = 0.045 Ω @ -10 V but V_DS = -30 V; smaller 2 mm × 2 mm package; no avalanche rating published	Lower voltage rating limits use to 5 V/3.3 V systems; reduced thermal mass affects pulse handling	Choose DMN3026LFG-7 when board space is constrained and 30 V blocking suffices

Compared with IRF7425PBF and DMN3026LFG-7, the SQ3419EV-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and 13.6 mJ avalanche energy - making it the only option validated for under-hood automotive power switching where reliability under transient stress is non-negotiable.

Availability

SQ3419EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, reverse polarity protection, and high-side load switching requiring stable component supply across production lifecycles.

Supply support for SQ3419EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3419EV-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for robust, high-temperature switching in engine control, body electronics, and ADAS subsystems.

FAQ

What is the maximum junction temperature rating for the SQ3419EV-T1_GE3?

The SQ3419EV-T1_GE3 has a maximum junction temperature rating of +175 °C, validated per AEC-Q101 stress test conditions including high-temperature reverse bias and temperature cycling. This rating allows deployment in under-hood automotive locations where ambient temperatures exceed 125 °C, provided PCB thermal design maintains T_J ≤ 175 °C under worst-case power dissipation.

Is the SQ3419EV-T1_GE3 suitable for high-side switching with 3.3 V logic-level gate drive?

Yes, the SQ3419EV-T1_GE3 is suitable for high-side switching with 3.3 V logic-level gate drive due to its V_GS(th) range of -1.5 V to -2.5 V and R_DS(on) of 0.092 Ω at V_GS = -4.5 V. At 3.3 V drive (i.e., V_GS ≈ -3.3 V), the device achieves sufficient enhancement for loads up to ~3 A with acceptable on-resistance, confirmed by transfer characteristic curves in the official datasheet.

Does the SQ3419EV-T1_GE3 have avalanche capability, and is it production-tested?

Yes, the SQ3419EV-T1_GE3 has a specified single-pulse avalanche energy rating of 13.6 mJ (E_AS) with L = 0.1 mH, and 100 % UIS (unclamped inductive switching) testing is performed on every production lot. This ensures consistent ruggedness against inductive kickback in motor and solenoid driving applications without external snubbers.

What is the thermal resistance from junction to ambient for the SQ3419EV-T1_GE3 in standard PCB mounting?

The junction-to-ambient thermal resistance (R_thJA) for the SQ3419EV-T1_GE3 is 110 °C/W when mounted on a 1" square FR4 PCB with 2 oz. copper on both sides. This value assumes full solder coverage of the exposed drain paddle and is used for initial thermal estimation; actual performance depends on copper area, layer count, and airflow.

How does the SQ3419EV-T1_GE3 compare to standard silicon MOSFETs in terms of gate charge and switching speed?

The SQ3419EV-T1_GE3 features a total gate charge (Q_g) of 7.5–11.3 nC at V_GS = -4.5 V, enabling fast switching with turn-on delay of 8–12 ns and rise time of 24–36 ns. Compared to legacy planar P-channel MOSFETs with similar R_DS(on), its TrenchFET® structure reduces Q_g by ~25 %, lowering driver power loss and improving efficiency in high-frequency PWM applications.

SQ3419EV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 6.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 990 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3419EV-T1_GE3 FAQ

1.How can I place an order for SQ3419EV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3419EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3419EV-T1_GE3 reliable?

The price and inventory of SQ3419EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3419EV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3419EV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3419EV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3419EV-T1_GE3?

SQ3419EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3419EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3419EV-T1_GE3?

For technical support, including SQ3419EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3419EV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3419EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3419EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3419EV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3419EV-T1_GE3?

All SQ3419EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3419EV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3419EV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3419EV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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