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Vishay Siliconix SQ3425CEV-T1_GE3
- Part No.:
- SQ3425CEV-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3425CEV-T1_GE3.pdf
- Description:
- MOSFET P-CH 20V 7.4A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,635
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Product details
Overview
SQ3425CEV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -20 V drain-source voltage, 0.060 Ω RDS(on) at -4.5 V gate drive, and -7.4 A continuous drain current at TC = 25 °C. It serves as a high-side load switch in 12 V automotive power distribution systems including body control modules and lighting drivers.
For engineers reviewing the SQ3425CEV-T1_GE3 datasheet, SQ3425CEV-T1_GE3 pinout, SQ3425CEV-T1_GE3 application, or SQ3425CEV-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, -1.4 V gate threshold voltage, and robust 6 mJ single-pulse avalanche energy rating - all critical for under-hood automotive switching reliability.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance with fast switching performance: total gate charge is 7.4 nC (typ), turn-on delay is 11 ns, and output capacitance is 162 pF (typ) at -10 V VDS. Its gate threshold voltage range of -0.6 V to -1.4 V ensures stable turn-on behavior across temperature and manufacturing variation.
The device integrates a body diode with 18 ns reverse recovery time and 8 nC Qrr, enabling efficient synchronous rectification or freewheeling in DC-DC converters. Thermal design is supported by 30 °C/W junction-to-foot resistance and 110 °C/W junction-to-ambient (PCB mount), validated per JEDEC MO-193C standard.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 12 V automotive battery rail with margin against load dump transients |
| RDS(on) @ VGS = -4.5 V | 0.060 Ω - Enables <150 mW conduction loss at 7.4 A, supporting thermally constrained PCB layouts |
| ID (continuous) | -7.4 A @ TC = 25 °C - Sustains full-load current in compact TSOP-6 footprint without forced cooling |
| TJ max | +175 °C - Qualified for under-hood environments including engine control units and transmission control modules |
| EAS | 6 mJ - Withstands repetitive inductive switching stress in solenoid and motor driver applications |
| AEC-Q101 | Qualified - Meets automotive reliability requirements for temperature cycling, HTRB, and UIS testing |
| Qg | 7.4 nC (typ) - Low gate charge enables fast switching with minimal driver power consumption |
Pinout & Package
TSOP-6 surface-mount package per JEDEC MO-193C: 3.05 mm × 2.85 mm × 1.00 mm body, lead pitch 0.95 mm, 100 % matte tin lead finish, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Internally connected drain terminals - provide low-inductance, high-current path to PCB copper pour |
| 3 | Gate (G) | Control input requiring -4.5 V to fully enhance; gate resistance 6.3 Ω (typ) limits ringing during switching |
| 4 | Source (S) | Reference node for gate drive and current sensing; tied to system ground or high-side rail return path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 20 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche capability are verified per unit - no sampling-based qualification |
| Body diode with trr = 18 ns | Reduces switching losses in bidirectional current paths, e.g., reverse polarity protection circuits |
| Junction-to-foot thermal resistance = 30 °C/W | Enables direct thermal coupling to internal PCB ground plane, bypassing solder joint thermal bottleneck |
| Marking code "9P" | Uniquely identifies SQ3425CEV-T1_GE3 on tape-and-reel packaging for traceability in automotive production |
Applications
| Automotive Body Control Module | LED Headlamp Driver |
|---|---|
|
Use Scenario: High-side switching of door lock actuators and window lift motors in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with active-low enable logic and integrated overtemperature shutdown. Use Value: -7.4 A rating supports peak motor inrush; 175 °C TJ max ensures operation near HVAC ducts; AEC-Q101 compliance guarantees field reliability. |
Use Scenario: PWM-controlled current regulation for high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Synchronous rectifier and current sink in buck converter topology, operating at 200–500 kHz switching frequency. Use Value: 7.4 nC Qg and 11 ns td(on) minimize dead-time losses; low Coss (162 pF) reduces capacitive switching loss at high frequency. |
| Reverse Polarity Protection | Start-Stop System Power Switch |
|
Use Scenario: Input protection circuit preventing damage from battery misconnection in infotainment head units and telematics control units. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and system input, conducting only when VIN is correctly polarized. Use Value: -1.4 V VGS(th) ensures reliable turn-on at cold-crank voltages down to 6 V; -20 V VDS withstands jump-start transients up to ±24 V. |
Use Scenario: Controlled engagement/disengagement of starter motor and alternator in micro-hybrid 12 V start-stop systems. IC Role / Device Role / Timing Role: High-side power switch managing main battery feed to ECU and sensor subsystems during engine restart events. Use Value: 6 mJ EAS absorbs inductive kickback from relay coils and solenoids; 100 % UIS tested ensures consistent surge immunity across production lots. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PBF | RDS(on) = 0.055 Ω @ -4.5 V but rated only to +150 °C; not AEC-Q101 qualified | Limited to industrial or consumer-grade 12 V systems without under-hood thermal stress | Select when cost sensitivity outweighs automotive qualification and extended temperature needs |
| DMT6009LSD-13 | Same TSOP-6 package and -20 V rating; RDS(on) = 0.058 Ω @ -4.5 V; AEC-Q101 qualified but lower EAS (4.5 mJ) | Suitable for lower-energy switching loads like interior lighting, but marginal for solenoid drivers | Prefer where board space matches and avalanche margin can be relaxed by external clamping |
Compared with IRF7425PBF and DMT6009LSD-13, SQ3425CEV-T1_GE3 provides the highest combination of automotive qualification, 175 °C operation, and 6 mJ avalanche robustness - making it the only choice for safety-critical or thermally aggressive under-hood functions.
Availability
SQ3425CEV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, reverse polarity protection, and start-stop system power management requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQ3425CEV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SQ3425CEV-T1_GE3 belongs to Vishay's TrenchFET® Automotive series, engineered specifically for demanding 12 V automotive power switching applications where thermal resilience, avalanche ruggedness, and AEC-Q101 compliance are mandatory.
FAQ
What is the gate threshold voltage range for SQ3425CEV-T1_GE3?
The SQ3425CEV-T1_GE3 has a gate-source threshold voltage (VGS(th)) range of -0.6 V to -1.4 V, measured at VDS = VGS and ID = -250 μA. This negative threshold ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers referenced to the source, and supports stable operation across -55 °C to +175 °C junction temperature.
Is SQ3425CEV-T1_GE3 suitable for reverse polarity protection in automotive ECUs?
Yes, SQ3425CEV-T1_GE3 is well-suited for reverse polarity protection due to its -20 V VDS rating, which accommodates jump-start transients up to ±24 V, and its -1.4 V maximum VGS(th), ensuring conduction even at cold-crank battery voltages down to 6 V. Its AEC-Q101 qualification and 175 °C rating further validate its use in engine bay and ECU applications.
Does SQ3425CEV-T1_GE3 have an integrated body diode, and what are its key parameters?
Yes, SQ3425CEV-T1_GE3 includes a monolithic body diode with forward voltage VSD = -0.8 V to -1.2 V at IF = -1.7 A and VGS = 0 V. Its reverse recovery time is 18 ns (typ), Qrr is 8 nC (typ), and peak reverse recovery current IRM(REC) is -0.86 A - characteristics optimized for low-loss freewheeling in DC-DC converters and motor drives.
What thermal metrics define the cooling performance of SQ3425CEV-T1_GE3 on a standard PCB?
SQ3425CEV-T1_GE3 delivers RthJA = 110 °C/W (PCB mount, 1" × 1" FR4, 2 oz Cu) and RthJF = 30 °C/W (junction-to-foot). The low RthJF enables direct thermal transfer from the exposed drain pads to internal ground planes, while RthJA reflects realistic board-level dissipation for layout validation using standard automotive PCB stackups.
How does the avalanche energy rating of SQ3425CEV-T1_GE3 impact its use in inductive load switching?
SQ3425CEV-T1_GE3 is rated for 6 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This specification allows safe clamping of inductive kickback from solenoids, relays, and small motors without external snubbers - a critical feature for automotive power switches where failure modes must be contained within the MOSFET itself.
SQ3425CEV-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 840 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3425CEV-T1_GE3 FAQ
1.How can I place an order for SQ3425CEV-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3425CEV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3425CEV-T1_GE3 reliable?
The price and inventory of SQ3425CEV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3425CEV-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ3425CEV-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3425CEV-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3425CEV-T1_GE3?
SQ3425CEV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3425CEV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3425CEV-T1_GE3?
For technical support, including SQ3425CEV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3425CEV-T1_GE3 requirements.
6.How does Aetrix verify that SQ3425CEV-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ3425CEV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3425CEV-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ3425CEV-T1_GE3?
All SQ3425CEV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3425CEV-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3425CEV-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ3425CEV-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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