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Vishay Siliconix SQ3425EV-T1_BE3
- Part No.:
- SQ3425EV-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3425EV-T1_BE3.pdf
- Description:
- MOSFET P-CH 20V 7.4A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,881
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Product details
Overview
SQ3425EV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-side load switching in 12 V and 24 V systems. It features -20 V drain-source voltage rating, 0.060 Ω RDS(on) at VGS = -4.5 V, -7.4 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood applications including body control modules and power distribution units.
For engineers reviewing the SQ3425EV-T1_BE3 datasheet, SQ3425EV-T1_BE3 pinout, SQ3425EV-T1_BE3 application, or SQ3425EV-T1_BE3 equivalent, key selection criteria include its -175 °C maximum junction temperature, TSOP-6 package thermal performance (RthJF = 30 °C/W), and robust 100 % UIS testing for inductive load handling in automotive power management circuits.
Technical Context
This P-channel MOSFET operates as a high-side switch with gate-threshold voltage of -1.0 V (typical), enabling direct drive from 3.3 V or 5 V microcontrollers when used with level-shifting or charge-pump support. Its trench-based silicon structure delivers low gate charge (Qg = 6.9 nC typ) and fast switching (td(off) = 41 ns typ), reducing conduction and switching losses in PWM-controlled loads.
The device integrates a built-in source-drain diode with VSD = -0.8 V (typ) at IF = -1.7 A and supports pulsed avalanche energy up to 6 mJ. Thermal design is enabled by its junction-to-foot thermal resistance of 30 °C/W and validated operation across -55 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection |
| RDS(on) @ VGS = -4.5 V | 0.049 Ω (typ) - Enables <100 mW conduction loss at 7 A DC load current |
| ID (continuous) | -7.4 A @ TC = 25 °C - Supports high-current solenoid, lamp, and motor drivers |
| Qg | 6.9 nC (typ) - Reduces gate drive power and enables efficient 100 kHz+ PWM operation |
| TJ max | +175 °C - Qualified for under-hood placement without external heatsinking in compact modules |
| RthJF | 30 °C/W - Enables direct thermal coupling to PCB copper pour for passive cooling |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics reliability and lifetime validation |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 0.50 mm max height. Optimized for automated assembly and thermal transfer via exposed drain pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Internally paralleled terminals - connected to exposed copper pad for low-inductance, high-current path and thermal conduction to PCB |
| 3 | Gate (G) | Control input - requires negative VGS for turn-on; compatible with standard logic-level drivers with appropriate polarity |
| 4 | Source (S) | Power return node - tied to system ground or load reference; forms cathode of integrated body diode |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) in small TSOP-6 package while maintaining ruggedness against repetitive avalanche events |
| 100 % UIS tested | Guarantees reliable operation during inductive load turn-off transients without external snubbers in automotive actuators |
| Exposed drain thermal pad | Provides direct thermal path from junction to PCB - reduces RthJA to 110 °C/W on 1"² FR4 board |
| Low gate threshold variation | VGS(th) = -0.6 to -1.4 V - ensures consistent turn-on behavior across temperature and process corners |
| High-temperature operation | Rated for continuous operation up to +175 °C junction - eliminates derating concerns in engine compartment designs |
Applications
| Body Control Module (BCM) | Engine Control Unit (ECU) Power Distribution |
|---|---|
Use Scenario: Switching 12 V power to door lock actuators, mirror heaters, and interior lighting. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery with reverse-polarity and short-circuit protection. Use Value: Low RDS(on) minimizes voltage drop and heat generation during extended duty cycles in confined BCM enclosures. |
Use Scenario: Managing auxiliary power rails for sensors, fuel injectors, and ignition coils in engine bay environments. IC Role / Device Role / Timing Role: Robust high-side switch with AEC-Q101 qualification and 175 °C operation for under-hood deployment. Use Value: Eliminates need for external thermal management due to high-temperature rating and low RDS(on). |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Control |
Use Scenario: Providing controlled 12 V startup/shutdown sequencing to CMOS image sensors and ISP processors. IC Role / Device Role / Timing Role: Soft-start-capable high-side switch with fast turn-off to prevent fault propagation during camera reset. Use Value: Low Qg and fast td(off) enable precise power sequencing aligned with SoC wake/sleep timing. |
Use Scenario: Driving H-bridge half-bridge upper switches or managing EPS motor precharge circuits. IC Role / Device Role / Timing Role: High-reliability P-channel switch supporting frequent PWM cycling and transient overload conditions. Use Value: 100 % UIS testing ensures survival during motor stall and regenerative braking events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6009LPS-13 | RDS(on) = 0.009 Ω @ -4.5 V but rated only to -60 V; larger SO-8 package; not AEC-Q101 qualified | Targeted at industrial/commercial power supplies, not automotive environments | Select when higher voltage margin and lower RDS(on) are needed and AEC-Q101 is not required |
| IPD80P03P4L-04 | RDS(on) = 0.004 Ω @ -4.5 V; TO-252 package; AEC-Q101 qualified; higher ID (80 A) but larger footprint | Used in high-current EPS and transmission control modules where space allows | Choose for >20 A load capability and same automotive qualification, accepting larger board area |
Compared with DMT6009LPS-13 and IPD80P03P4L-04, SQ3425EV-T1_BE3 offers optimal balance of AEC-Q101 compliance, TSOP-6 compactness, and -7.4 A capability-making it ideal for space-constrained, thermally demanding automotive modules where full SO-8 or TO-252 real estate is unavailable.
Availability
SQ3425EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and ADAS power subsystems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SQ3425EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade qualification.
The SQ3425EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-side switching in harsh-environment vehicle systems where thermal resilience, avalanche robustness, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum operating junction temperature for SQ3425EV-T1_BE3?
The SQ3425EV-T1_BE3 is rated for continuous operation up to +175 °C junction temperature, verified per AEC-Q101 stress testing. This enables direct mounting in high-ambient zones such as engine compartments without forced cooling. The device maintains specified RDS(on) and switching parameters across the full -55 °C to +175 °C range, and its thermal characteristics are validated with RthJF = 30 °C/W to the exposed drain pad.
Is SQ3425EV-T1_BE3 suitable for high-side switching in 24 V commercial vehicle applications?
Yes, SQ3425EV-T1_BE3 supports 24 V nominal systems with its -20 V VDS rating and robust transient handling. Its 100 % UIS testing ensures survivability during load dump and inductive kickback events common in truck and bus electrical architectures. The -175 °C TJ(max) and AEC-Q101 qualification further validate suitability for heavy-duty vehicle power distribution modules where thermal and reliability margins are critical.
Does SQ3425EV-T1_BE3 require a gate driver IC for microcontroller interfacing?
SQ3425EV-T1_BE3 can be driven directly by 3.3 V or 5 V microcontrollers in low-frequency on/off applications, as its VGS(th) ranges from -0.6 V to -1.4 V. However, for PWM operation above 10 kHz or fast switching (<100 ns transitions), a dedicated gate driver is recommended to overcome its 6.9 nC total gate charge and minimize switching losses. The device does not integrate level-shifting, so high-side drive requires either a charge pump or isolated driver for full enhancement.
How is thermal performance validated for SQ3425EV-T1_BE3 in the TSOP-6 package?
Thermal performance of SQ3425EV-T1_BE3 is validated using JEDEC-standard test boards: RthJA = 110 °C/W measured on 1"² FR4 PCB with 2 oz. copper, and RthJF = 30 °C/W measured to the exposed drain pad. These values are confirmed through transient dual-interface testing and published in Vishay's thermal characterization report (Doc. #72610). The TSOP-6 footprint includes four drain pins and an internal thermal slug to maximize heat transfer to the PCB copper pour.
What packaging and marking details apply to SQ3425EV-T1_BE3?
SQ3425EV-T1_BE3 is supplied in tape-and-reel format (T1 suffix) per EIA-481 standard, with 3,000 units per reel. The marking code "8Z" appears on the top surface of the TSOP-6 package, and the device is lead (Pb)-free and halogen-free per Vishay's material compliance standards (Doc. #99912). The "_BE3" suffix denotes Vishay's enhanced reliability binning and automotive traceability protocol.
SQ3425EV-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.3 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 840 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3425EV-T1_BE3 FAQ
1.How can I place an order for SQ3425EV-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3425EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3425EV-T1_BE3 reliable?
The price and inventory of SQ3425EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3425EV-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ3425EV-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3425EV-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3425EV-T1_BE3?
SQ3425EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3425EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3425EV-T1_BE3?
For technical support, including SQ3425EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3425EV-T1_BE3 requirements.
6.How does Aetrix verify that SQ3425EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ3425EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3425EV-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ3425EV-T1_BE3?
All SQ3425EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3425EV-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3425EV-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ3425EV-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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