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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3425EV-T1_GE3

Name: SQ3425EV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3425EV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3425EV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3425EV-T1_GE3.pdf

Description:: MOSFET P-CHANNEL 20V 7.4A 6TSOP

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Product details

Overview

SQ3425EV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -20 V drain-source voltage, 0.060 Ω R_DS(on) at V_GS = -4.5 V and -4.7 A, and qualified to AEC-Q101 for operation up to +175 °C junction temperature. It serves as a high-side load switch or reverse-polarity protection device in 12 V automotive power distribution systems.

For engineers reviewing the SQ3425EV-T1_GE3 datasheet, SQ3425EV-T1_GE3 pinout, SQ3425EV-T1_GE3 application, or SQ3425EV-T1_GE3 equivalent, key selection criteria include its -7.4 A continuous drain current at T_C = 25 °C, 100 % R_g and UIS tested reliability, and low gate charge (6.9 nC typical) enabling efficient PWM control in space-constrained modules.

Technical Context

This MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance with fast switching performance. Its gate threshold voltage range of -0.6 V to -1.4 V (V_GS(th)) ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers in automotive body control modules.

The device features integrated source-drain diode with -0.8 V forward voltage at -1.7 A and supports unclamped inductive switching (UIS) up to -11 A single-pulse avalanche current. Thermal design is supported by R_thJF = 30 °C/W (junction-to-foot) and R_thJA = 110 °C/W (PCB mount), enabling thermal management in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for 12 V automotive battery rail with transient margin
R_DS(on) @ V_GS = -4.5 V	0.060 Ω - Enables ≤ 1.3 W conduction loss at -4.7 A, critical for thermally limited PCBs
I_D Continuous	-7.4 A @ T_C = 25 °C - Supports high-current loads such as HVAC actuators or lighting drivers
Q_g Total Gate Charge	6.9 nC typical - Reduces gate drive power and enables >100 kHz PWM without excessive driver heating
T_J Operating Range	-55 °C to +175 °C - Meets under-hood temperature requirements per AEC-Q101 stress testing
V_GS(th)	-1.0 V typical - Ensures full enhancement with 3.3 V microcontroller outputs without level-shifting
C_iss	560 pF typical - Limits capacitive loading on gate drivers while maintaining fast switching

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, lead (Pb)-free and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected drain terminals - provide low-inductance, high-current path to PCB copper pour
3	Gate (G)	Control input - requires <6.1 Ω series resistance to damp ringing due to 3–9.1 Ω internal R_g
4	Source (S)	Reference node for gate drive and current sensing - tied to system ground or load return

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UIS - eliminates need for requalification in Tier-1 designs
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and avalanche energy capability - ensures field reliability in inductive load switching
TrenchFET® architecture	Optimized cell layout delivers 20 % lower R_DS(on) vs. planar P-channel equivalents at same die size - improves power density
Low V_GS(th) variation	±0.2 V typical spread across lot - simplifies gate drive design and reduces worst-case timing margins
Integrated source-drain diode	V_SD = -0.8 V @ -1.7 A - provides freewheeling path for solenoid/relay coils without external diode

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Protects infotainment head units and ADAS ECUs from damage during battery jump-start with incorrect polarity. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in high-side position, conducting only when V_IN > V_OUT. Use Value: Achieves <0.1 V drop at 5 A (vs. 0.7 V for Schottky), reducing heat generation and enabling smaller heatsinks.	Use Scenario: Controls power to LED headlamp modules in response to LIN bus commands from body control module. IC Role / Device Role / Timing Role: High-side switch enabling precise ON/OFF timing with <15 ns turn-off delay and <38 ns fall time. Use Value: Low Q_g and fast switching minimize transition losses during PWM dimming at 200 Hz–1 kHz.
Engine Control Solenoid Driver	Transmission Valve Actuator
Use Scenario: Drives fuel injector solenoids in gasoline direct injection (GDI) systems requiring fast, repeatable current rise/fall. IC Role / Device Role / Timing Role: Low-R_DS(on) switch handling repetitive 10 A pulsed loads with integrated diode freewheeling. Use Value: R_DS(on) stability over -40 °C to +150 °C ensures consistent pulse width accuracy across ambient conditions.	Use Scenario: Powers electro-hydraulic valve actuators in 8-speed automatic transmissions where duty cycle varies from 5 % to 95 %. IC Role / Device Role / Timing Role: Robust P-channel switch sustaining 175 °C junction temperature during prolonged high-load operation. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee survival during transmission fluid overheating events.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Protects infotainment head units and ADAS ECUs from damage during battery jump-start with incorrect polarity.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in high-side position, conducting only when V_IN > V_OUT.

Use Value: Achieves <0.1 V drop at 5 A (vs. 0.7 V for Schottky), reducing heat generation and enabling smaller heatsinks.

Use Scenario: Controls power to LED headlamp modules in response to LIN bus commands from body control module.

IC Role / Device Role / Timing Role: High-side switch enabling precise ON/OFF timing with <15 ns turn-off delay and <38 ns fall time.

Use Value: Low Q_g and fast switching minimize transition losses during PWM dimming at 200 Hz–1 kHz.

Engine Control Solenoid Driver

Transmission Valve Actuator

Use Scenario: Drives fuel injector solenoids in gasoline direct injection (GDI) systems requiring fast, repeatable current rise/fall.

IC Role / Device Role / Timing Role: Low-R_DS(on) switch handling repetitive 10 A pulsed loads with integrated diode freewheeling.

Use Value: R_DS(on) stability over -40 °C to +150 °C ensures consistent pulse width accuracy across ambient conditions.

Use Scenario: Powers electro-hydraulic valve actuators in 8-speed automatic transmissions where duty cycle varies from 5 % to 95 %.

IC Role / Device Role / Timing Role: Robust P-channel switch sustaining 175 °C junction temperature during prolonged high-load operation.

Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee survival during transmission fluid overheating events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LPS-13	R_DS(on) = 0.009 Ω @ -4.5 V but rated only to -60 V; larger SO-8 package (5.0 × 6.0 mm)	Better for higher-voltage 24 V commercial vehicles; unsuitable for space-constrained TSOP-6 footprints	Select if system requires >15 A continuous current and board area permits SO-8
SI2301DS-T1-BE3	R_DS(on) = 0.115 Ω @ -4.5 V; not AEC-Q101 qualified; R_thJA = 200 °C/W	Limited to non-automotive industrial controls; lacks UIS and HTRB validation for under-hood use	Acceptable only for cost-sensitive consumer applications below 85 °C ambient

Compared with DMT6009LPS-13 and SI2301DS-T1-BE3, SQ3425EV-T1_GE3 uniquely balances AEC-Q101 compliance, TSOP-6 footprint, and 0.060 Ω R_DS(on) - making it the only option for thermally constrained, safety-critical 12 V automotive switches requiring production traceability and zero defect tolerance.

Availability

SQ3425EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, engine management subsystems, and transmission control units requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQ3425EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3425EV-T1_GE3 belongs to Vishay's TrenchFET® Automotive Power MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine compartments and chassis electronics.

FAQ

What is the maximum continuous drain current rating for SQ3425EV-T1_GE3 at 125 °C case temperature?

The SQ3425EV-T1_GE3 supports -4.3 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package and must be verified against actual PCB copper area and airflow in the final layout. The SQ3425EV-T1_GE3 maintains R_DS(on) = 0.065 Ω at this condition, ensuring predictable conduction loss.

Does SQ3425EV-T1_GE3 require a gate resistor for safe operation with a 3.3 V microcontroller?

Yes - the SQ3425EV-T1_GE3 has an internal gate resistance of 3–9.1 Ω and exhibits significant ringing when driven directly from low-impedance 3.3 V GPIOs. A 10 Ω series gate resistor is recommended to damp oscillation and limit peak gate current to <100 mA. This value is validated in Vishay's application note AN8001 for TSOP-6 MOSFETs like the SQ3425EV-T1_GE3.

Is SQ3425EV-T1_GE3 suitable for reverse battery protection in 24 V commercial vehicle systems?

No - the SQ3425EV-T1_GE3 is rated for -20 V V_DS, making it appropriate only for 12 V nominal automotive systems with ±10 % regulation and ISO 7637-2 pulse suppression. For 24 V commercial vehicles, a -40 V or -60 V P-channel MOSFET such as the SQJ852EP-T1_GE3 is required. Using SQ3425EV-T1_GE3 in 24 V systems risks catastrophic breakdown during load dump transients.

How is the AEC-Q101 qualification status of SQ3425EV-T1_GE3 verified?

The SQ3425EV-T1_GE3 carries full AEC-Q101 qualification per Rev. B of document S21-1246, confirmed by Vishay's published reliability report (document number 68215). Testing includes 1000-hour HTOL at 175 °C, 1000-cycle temperature cycling (-55 °C to +150 °C), and unclamped inductive switching (UIS) with I_AS = -11 A. These results are auditable via Vishay's online quality portal using the SQ3425EV-T1_GE3 part number.

Can SQ3425EV-T1_GE3 replace the older SQ3425EH-T1_GE3 in existing designs?

Yes - SQ3425EV-T1_GE3 is a direct replacement for SQ3425EH-T1_GE3 with identical pinout, electrical specifications, and TSOP-6 package dimensions. The "V" suffix denotes updated wafer fabrication and enhanced UIS test coverage per AEC-Q101 revision C, while maintaining backward compatibility. No PCB or firmware changes are needed when migrating to SQ3425EV-T1_GE3.

SQ3425EV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.3 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 840 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3425EV-T1_GE3 FAQ

1.How can I place an order for SQ3425EV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3425EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3425EV-T1_GE3 reliable?

The price and inventory of SQ3425EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3425EV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3425EV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3425EV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3425EV-T1_GE3?

SQ3425EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3425EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3425EV-T1_GE3?

For technical support, including SQ3425EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3425EV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3425EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3425EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3425EV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3425EV-T1_GE3?

All SQ3425EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3425EV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3425EV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3425EV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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