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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3426AEEV-T1_BE3

Name: SQ3426AEEV-T1_BE3
Brand: Vishay Siliconix
SKU: SQ3426AEEV-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3426AEEV-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3426AEEV-T1_BE3.pdf

Description:: MOSFET N-CH 60V 7A 6TSOP

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Product details

Overview

SQ3426AEEV-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 0.042 Ω at V_GS = 10 V and 0.063 Ω at V_GS = 4.5 V, delivering 7 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is housed in a TSOP-6 surface-mount package, commonly used in automotive body control modules and DC motor drivers.

For engineers reviewing the SQ3426AEEV-T1_BE3 datasheet, SQ3426AEEV-T1_BE3 pinout, SQ3426AEEV-T1_BE3 application, or SQ3426AEEV-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, thermal resistance R_thJF = 30 °C/W, and gate charge Q_g = 11.5 nC (typ) - all critical for robust 12 V/24 V automotive switching designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-reliability automotive environments. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables compatibility with standard 3.3 V and 5 V logic-level microcontrollers, while the integrated source-drain diode supports freewheeling in inductive loads.

The device features guaranteed 800 V HBM ESD protection and is fully characterized for single-pulse avalanche energy (E_AS = 5 mJ), supporting fault-tolerant operation in load-dump and inductive kickback scenarios common in automotive power distribution networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 42 V automotive systems and 24 V battery architectures
R_DS(on) @ V_GS = 10 V	0.042 Ω - enables ≤ 1.5 W conduction loss at 6 A, reducing heatsink requirements in space-constrained modules
R_DS(on) @ V_GS = 4.5 V	0.063 Ω - ensures reliable turn-on with 5 V MCU GPIOs without level-shifting circuitry
I_D (continuous)	7 A @ T_C = 25 °C - supports medium-power solenoid, fan, and LED driver loads in BCM and gateway ECUs
Q_g	11.5 nC (typ) - balances switching speed and gate drive power, enabling <10 ns rise/fall times with 1 Ω driver
T_J max	+175 °C - meets under-hood thermal requirements per AEC-Q101, enabling placement near engines or power stages
R_thJF	30 °C/W - low junction-to-foot thermal resistance improves power handling on PCB copper pads without exposed thermal pads

Pinout & Package

TSOP-6 package: 2.95–3.10 mm × 2.70–2.98 mm footprint, 0.95 mm pitch, 0.91–1.10 mm height, with exposed drain pad for thermal conduction to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; internally connected to exposed copper pad for thermal and electrical conduction
3	Gate (G)	Control input; requires <12 V drive; 3.8 Ω typical gate resistance limits ringing in noisy automotive environments
4	Source (S)	Power return path; referenced to system ground; forms cathode of integrated body diode

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across -55 °C to +175 °C, including temperature cycling, humidity, and mechanical shock tests
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to avalanche overstress
TrenchFET® architecture	Reduces specific on-resistance by >30 % vs. planar MOSFETs, enabling smaller die size and lower gate charge
800 V HBM ESD rating	Withstands electrostatic discharge during assembly and service without external protection components
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free soldering

Applications

Automotive Body Control Module (BCM)	DC Motor Driver for HVAC Blower
Use Scenario: Switching 12 V power to door locks, window lifters, and interior lighting in modern BCMs. IC Role / Device Role / Timing Role: Low-side power switch controlling load current with PWM dimming or timed actuation. Use Value: R_DS(on) = 0.063 Ω at 4.5 V ensures full turn-on from MCU GPIOs; 175 °C rating allows placement near other hot components.	Use Scenario: Driving brushed DC fans in vehicle HVAC systems with variable-speed control via PWM. IC Role / Device Role / Timing Role: High-efficiency low-side switch managing bidirectional current flow during motor commutation and freewheeling. Use Value: Integrated body diode with V_SD = 0.75 V (typ) at 1.6 A reduces need for external flyback diodes and improves efficiency.
Automotive LED Headlamp Driver	Engine Control Unit (ECU) Solenoid Interface
Use Scenario: Controlling high-brightness LED arrays in adaptive front-lighting systems (AFS) requiring precise current regulation. IC Role / Device Role / Timing Role: Constant-current switch operating in linear or PWM mode with fast transient response. Use Value: Low Q_g = 11.5 nC enables clean 10–20 kHz PWM switching without excessive gate drive losses or EMI.	Use Scenario: Driving fuel injector or turbocharger wastegate solenoids in engine management systems. IC Role / Device Role / Timing Role: Robust low-side driver handling inductive kickback and load-dump transients. Use Value: 5 mJ single-pulse avalanche energy rating protects against inductive energy dissipation without external snubbers.

Automotive Body Control Module (BCM)

DC Motor Driver for HVAC Blower

Use Scenario: Switching 12 V power to door locks, window lifters, and interior lighting in modern BCMs.

IC Role / Device Role / Timing Role: Low-side power switch controlling load current with PWM dimming or timed actuation.

Use Value: R_DS(on) = 0.063 Ω at 4.5 V ensures full turn-on from MCU GPIOs; 175 °C rating allows placement near other hot components.

Use Scenario: Driving brushed DC fans in vehicle HVAC systems with variable-speed control via PWM.

IC Role / Device Role / Timing Role: High-efficiency low-side switch managing bidirectional current flow during motor commutation and freewheeling.

Use Value: Integrated body diode with V_SD = 0.75 V (typ) at 1.6 A reduces need for external flyback diodes and improves efficiency.

Automotive LED Headlamp Driver

Engine Control Unit (ECU) Solenoid Interface

Use Scenario: Controlling high-brightness LED arrays in adaptive front-lighting systems (AFS) requiring precise current regulation.

IC Role / Device Role / Timing Role: Constant-current switch operating in linear or PWM mode with fast transient response.

Use Value: Low Q_g = 11.5 nC enables clean 10–20 kHz PWM switching without excessive gate drive losses or EMI.

Use Scenario: Driving fuel injector or turbocharger wastegate solenoids in engine management systems.

IC Role / Device Role / Timing Role: Robust low-side driver handling inductive kickback and load-dump transients.

Use Value: 5 mJ single-pulse avalanche energy rating protects against inductive energy dissipation without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN6LF5	60 V, R_DS(on) = 0.045 Ω @ 10 V, TSOP-6, AEC-Q101 qualified, but higher Q_g = 14.5 nC	Higher gate charge increases driver power and slows switching in high-frequency PWM	Prefer SQ3426AEEV-T1_BE3 where faster switching or lower gate drive loss is required
ON Semiconductor NTMFS4C09NT1G	60 V, R_DS(on) = 0.040 Ω @ 10 V, SO-8 package (larger footprint), AEC-Q101 qualified	Larger SO-8 package occupies more PCB area and has higher R_thJA = 62 °C/W vs. 110 °C/W for TSOP-6	Choose SQ3426AEEV-T1_BE3 for space-constrained layouts needing superior thermal performance on small pads

Compared with STL10DN6LF5 and NTMFS4C09NT1G, the SQ3426AEEV-T1_BE3 offers the lowest combination of R_DS(on), Q_g, and R_thJF in TSOP-6, making it optimal for thermally dense automotive modules where layout area and thermal margin are critical.

Availability

SQ3426AEEV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, HVAC blower drivers, and LED headlamp systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ3426AEEV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3426AEEV-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for under-hood and chassis-mounted applications demanding AEC-Q101 compliance, high-temperature operation, and ruggedized switching performance.

FAQ

What is the maximum continuous drain current rating for SQ3426AEEV-T1_BE3 at 125 °C case temperature?

The SQ3426AEEV-T1_BE3 supports 4 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package and ensures safe operation in high-ambient under-hood environments. The device maintains R_DS(on) = 0.056 Ω (typ) at this condition, enabling predictable power loss calculation for thermal design.

Is SQ3426AEEV-T1_BE3 suitable for 5 V logic-level gate drive without a level shifter?

Yes, SQ3426AEEV-T1_BE3 is fully compatible with 5 V logic-level gate drive: its gate threshold voltage V_GS(th) is 1.5–2.5 V, and R_DS(on) is specified at V_GS = 4.5 V (0.063 Ω). This allows direct interfacing with standard 5 V microcontrollers and logic ICs without external level-shifting circuitry - a key advantage in compact automotive control units.

Does SQ3426AEEV-T1_BE3 include an integrated body diode, and what is its forward voltage?

Yes, SQ3426AEEV-T1_BE3 includes an integrated source-drain body diode. Its forward voltage V_SD is 0.75 V (typ) at I_F = 1.6 A and V_GS = 0 V, as measured per the datasheet. This diode supports freewheeling in inductive loads such as motors and solenoids, eliminating the need for discrete flyback diodes in many automotive applications.

What is the thermal resistance from junction to foot (R_thJF) for SQ3426AEEV-T1_BE3, and why does it matter?

The SQ3426AEEV-T1_BE3 has R_thJF = 30 °C/W, measured from junction to the exposed drain pad (foot). This parameter is critical for thermal design when the device is mounted directly to a large copper pour or thermal pad on the PCB - it enables accurate estimation of junction temperature rise without relying on less efficient junction-to-ambient paths, especially in sealed or airflow-limited enclosures.

How is SQ3426AEEV-T1_BE3 qualified for automotive use, and what tests does it undergo?

SQ3426AEEV-T1_BE3 is AEC-Q101 qualified and undergoes 100 % R_g (gate resistance) and UIS (unclamped inductive switching) testing per lot. These stress tests verify gate integrity and avalanche energy handling capability (E_AS = 5 mJ), ensuring reliability in harsh automotive environments with voltage transients, thermal cycling, and mechanical vibration - all documented in Vishay's qualification report for part number SQ3426AEEV-T1_BE3.

SQ3426AEEV-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3426AEEV-T1_BE3 FAQ

1.How can I place an order for SQ3426AEEV-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3426AEEV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3426AEEV-T1_BE3 reliable?

The price and inventory of SQ3426AEEV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3426AEEV-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ3426AEEV-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3426AEEV-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3426AEEV-T1_BE3?

SQ3426AEEV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3426AEEV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3426AEEV-T1_BE3?

For technical support, including SQ3426AEEV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3426AEEV-T1_BE3 requirements.

6.How does Aetrix verify that SQ3426AEEV-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ3426AEEV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3426AEEV-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ3426AEEV-T1_BE3?

All SQ3426AEEV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3426AEEV-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3426AEEV-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ3426AEEV-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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