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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3426AEEV-T1_GE3

Name: SQ3426AEEV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3426AEEV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3426AEEV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3426AEEV-T1_GE3.pdf

Description:: MOSFET N-CH 60V 7A 6TSOP

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Product details

Overview

SQ3426AEEV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 7 A continuous drain current at 25 °C, and 0.042 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, body electronics, and DC-DC converter high-side switching.

For engineers reviewing the SQ3426AEEV-T1_GE3 datasheet, SQ3426AEEV-T1_GE3 pinout, SQ3426AEEV-T1_GE3 application, or SQ3426AEEV-T1_GE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (R_thJF = 30 °C/W), 100 % UIS testing, and guaranteed gate resistance (1.2–3.6 Ω) for predictable switching timing in automotive power stages.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its 60 V V_DS rating supports load-dump transient tolerance, while the 175 °C maximum junction temperature enables placement near heat sources like powertrain ECUs.

The device integrates a robust body diode with 0.75–1.2 V forward voltage at 1.6 A and supports synchronous rectification in buck converters. Gate charge parameters (Q_g = 7.6–12 nC, Q_gd = 4.1 nC) are specified at V_DS = 30 V and ID = 4 A, enabling accurate gate driver sizing for <30 ns turn-off delay.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Withstands ISO 7637-2 pulse 5a (load dump) up to 65 V in 12 V systems
R_DS(on) @ V_GS = 10 V	0.042 Ω - Delivers ≤1.5 W conduction loss at 6 A, reducing heatsink requirements
R_DS(on) @ V_GS = 4.5 V	0.063 Ω - Ensures reliable turn-on with 5 V logic-level gate drivers
I_D Continuous @ T_C = 25 °C	7 A - Supports high-current solenoid and motor drive loads without derating
T_J Operating Range	−55 to +175 °C - Qualified for under-hood applications per AEC-Q101 Rev D
EAS	5 mJ - Withstands single-pulse avalanche energy during inductive turn-off
R_thJF	30 °C/W - Enables direct thermal coupling to PCB copper pour for efficient heat extraction

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for thermal enhancement; 1.1 mm profile height suitable for space-constrained automotive modules.

Pin/Terminal	Circuit Role	Design Meaning
(1, 2, 5, 6) D	Drain	High-current output node; internally paralleled pins reduce resistance and inductance
(3) G	Gate	Control input; 1.2–3.6 Ω gate resistance ensures stable Miller-effect immunity
(4) S	Source	Power return path; referenced to driver ground; ties to internal substrate

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, UHAST, and ESD (800 V HBM)
100 % UIS tested	Each unit screened for unclamped inductive switching robustness per JESD22-A109
TrenchFET® architecture	Enables lower R_DS(on) × Q_g figure-of-merit vs. planar MOSFETs for improved efficiency
Exposed drain pad	Provides low-impedance thermal path to PCB; R_thJF = 30 °C/W measured to soldered foot
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C material definitions

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive Body Control Module (BCM)
Use Scenario: Switching 12 V fuel injectors with peak currents up to 6 A and PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side N-channel switch controlling injector coil energization; requires fast turn-off (<30 ns) to minimize dwell time error. Use Value: Low Q_gd (4.1 nC) and tight R_DS(on) distribution ensure precise pulse-width control across temperature and unit variance.	Use Scenario: Driving 24 V HVAC blower motors and door lock actuators in harsh ambient conditions. IC Role / Device Role / Timing Role: Low-side switching element handling intermittent 5–7 A loads with 175 °C junction capability. Use Value: AEC-Q101 qualification and −55 to +175 °C operation eliminate thermal derating in sealed BCM enclosures.
48 V Mild Hybrid DC-DC Converter	Automotive LED Headlamp Driver
Use Scenario: Synchronous rectification in 48 V-to-12 V buck converters delivering >15 A output. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz with body diode commutation. Use Value: Low R_DS(on) (0.042 Ω) and low V_SD (0.75 V) minimize conduction loss and reverse recovery losses.	Use Scenario: Constant-current switching for adaptive front-lighting systems (AFS) with dynamic beam shaping. IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating LED string current up to 3 A per channel. Use Value: Tight V_GS(th) range (1.5–2.5 V) enables consistent turn-on threshold across wide temperature and supply variation.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM)

Use Scenario: Switching 12 V fuel injectors with peak currents up to 6 A and PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling injector coil energization; requires fast turn-off (<30 ns) to minimize dwell time error.

Use Value: Low Q_gd (4.1 nC) and tight R_DS(on) distribution ensure precise pulse-width control across temperature and unit variance.

Use Scenario: Driving 24 V HVAC blower motors and door lock actuators in harsh ambient conditions.

IC Role / Device Role / Timing Role: Low-side switching element handling intermittent 5–7 A loads with 175 °C junction capability.

Use Value: AEC-Q101 qualification and −55 to +175 °C operation eliminate thermal derating in sealed BCM enclosures.

48 V Mild Hybrid DC-DC Converter

Automotive LED Headlamp Driver

Use Scenario: Synchronous rectification in 48 V-to-12 V buck converters delivering >15 A output.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 300–500 kHz with body diode commutation.

Use Value: Low R_DS(on) (0.042 Ω) and low V_SD (0.75 V) minimize conduction loss and reverse recovery losses.

Use Scenario: Constant-current switching for adaptive front-lighting systems (AFS) with dynamic beam shaping.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating LED string current up to 3 A per channel.

Use Value: Tight V_GS(th) range (1.5–2.5 V) enables consistent turn-on threshold across wide temperature and supply variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN6LF5	Lower R_DS(on) (0.025 Ω @ 10 V) but higher Q_g (15 nC); same TSOP-6 package	Better conduction efficiency but slower switching; less suitable for >250 kHz PWM	Select when thermal budget dominates over switching loss, e.g., low-frequency solenoid drivers
ON Semiconductor NTMFS5C673NL	Higher V_DS (65 V), lower R_DS(on) (0.035 Ω), and larger SO-8FL package	Requires PCB layout change; better suited for high-power infotainment DC-DC stages	Choose when system-level surge margin >60 V is required and board area permits SO-8FL footprint

Compared with STL10DN6LF5 and NTMFS5C673NL, SQ3426AEEV-T1_GE3 offers optimal balance of switching speed (Q_g = 7.6–12 nC), thermal resistance (R_thJF = 30 °C/W), and AEC-Q101 compliance in the compact TSOP-6 form factor-making it ideal for space- and thermally constrained automotive modules.

Availability

SQ3426AEEV-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive production lifecycles.

Supply support for SQ3426AEEV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components.

The SQ3426AEEV-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® family, engineered specifically for under-hood and chassis-mounted power switching where high temperature, transient immunity, and long-term reliability are critical.

FAQ

What is the maximum gate-source voltage rating for SQ3426AEEV-T1_GE3?

The absolute maximum gate-source voltage for SQ3426AEEV-T1_GE3 is ±20 V, as specified in the Absolute Maximum Ratings table. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ±12 V or less, especially in noisy automotive environments where transients may couple onto gate traces.

Is SQ3426AEEV-T1_GE3 suitable for synchronous rectification in a 48 V automotive buck converter?

Yes, SQ3426AEEV-T1_GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.042 Ω @ 10 V), fast switching times (t_f = 7–11 ns), and low reverse recovery charge. Its body diode forward voltage (0.75–1.2 V at 1.6 A) and 100 % UIS testing further support robust operation during dead-time transitions in high-frequency (>300 kHz) 48 V-to-12 V conversion stages.

Does SQ3426AEEV-T1_GE3 require a gate resistor for stability in automotive applications?

Yes, SQ3426AEEV-T1_GE3 benefits from an external gate resistor (typically 5–22 Ω) to dampen ringing caused by PCB trace inductance and gate-drain capacitance (Crss = 55–70 pF). The device's intrinsic gate resistance (1.2–3.6 Ω) alone is insufficient for EMI control in noisy 12 V/24 V systems; proper gate resistor selection ensures clean turn-on/turn-off edges and prevents shoot-through in half-bridge configurations.

How is thermal performance validated for SQ3426AEEV-T1_GE3 in real automotive PCB layouts?

Thermal performance of SQ3426AEEV-T1_GE3 is characterized per JEDEC standards using a 1" × 1" FR-4 PCB with 2 oz. copper on both sides. Measured R_thJA = 110 °C/W and R_thJF = 30 °C/W assume full-solder coverage of the exposed drain pad. In production, thermal validation requires IR imaging of the device footprint under worst-case load (7 A, 175 °C ambient) to confirm junction temperature remains below 165 °C with margin.

What does "100 % Rg and UIS tested" mean for SQ3426AEEV-T1_GE3?

"100 % Rg and UIS tested" means every SQ3426AEEV-T1_GE3 unit undergoes production screening for gate resistance (1.2–3.6 Ω) and unclamped inductive switching (UIS) robustness. UIS testing applies a controlled inductive load (L = 0.1 mH) to verify each device withstands 10 A single-pulse avalanche current and 5 mJ energy without parametric shift or failure-ensuring field reliability in inductive load switching applications like fuel injectors and relays.

SQ3426AEEV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3426AEEV-T1_GE3 FAQ

1.How can I place an order for SQ3426AEEV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3426AEEV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3426AEEV-T1_GE3 reliable?

The price and inventory of SQ3426AEEV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3426AEEV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3426AEEV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3426AEEV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3426AEEV-T1_GE3?

SQ3426AEEV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3426AEEV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3426AEEV-T1_GE3?

For technical support, including SQ3426AEEV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3426AEEV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3426AEEV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3426AEEV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3426AEEV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3426AEEV-T1_GE3?

All SQ3426AEEV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3426AEEV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3426AEEV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3426AEEV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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