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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3426CEV-T1_GE3

Name: SQ3426CEV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3426CEV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3426CEV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3426CEV-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Product details

Overview

SQ3426CEV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 7 A continuous drain current at 25 °C, and 0.042 Ω R_DS(on) at V_GS = 10 V. It serves as a high-reliability switching element in low-voltage DC-DC converters, motor control stages, and load management circuits operating up to 175 °C junction temperature.

For engineers reviewing the SQ3426CEV-T1_GE3 datasheet, SQ3426CEV-T1_GE3 pinout, SQ3426CEV-T1_GE3 application, or SQ3426CEV-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, TSOP-6 package thermal performance (R_thJA = 110 °C/W), and body diode recovery characteristics (t_rr = 19–38 ns).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in automotive power rails. Its gate threshold voltage (1.5–2.5 V) enables robust 3.3 V and 5 V logic-level drive compatibility while maintaining tight V_GS(th) distribution across temperature.

The device integrates a co-packaged body diode with characterized reverse recovery (Q_rr = 18–36 nC, t_rr = 19–38 ns) and is fully specified for operation from −55 °C to +175 °C, supporting under-hood applications where thermal stability and avalanche ruggedness (E_AS = 5 mJ) are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before breakdown; supports 48 V system transients and ISO 7637-2 pulse 5a compliance.
R_DS(on) @ V_GS = 10 V	0.042 Ω - Confirmed at I_D = 5 A, TC = 25 °C; enables <1.05 W conduction loss at 5 A.
R_DS(on) @ V_GS = 4.5 V	0.063 Ω - Validated at I_D = 4 A; ensures reliable turn-on with standard 5 V microcontroller GPIOs.
I_D (continuous)	7 A @ T_C = 25 °C - Derates to 4 A at 125 °C; defines PCB copper area requirements for thermal management.
Q_g	6.8–12 nC - Total gate charge at V_DS = 30 V, I_D = 4 A; determines driver strength and switching energy loss.
t_r/t_f	3–18 ns / 4–11 ns - Rise/fall times with R_g = 1 Ω; sets minimum PWM frequency and EMI filter sizing.
E_AS	5 mJ - Single-pulse avalanche energy; provides fault tolerance during inductive load switching events.

Pinout & Package

Package: TSOP-6 (JEDEC MO-193C), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 3.05 mm × 2.85 mm × 1.05 mm (L × W × H). Thermal pad on drain terminals enhances heat transfer to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals connected internally; primary current path and thermal conduction path to PCB copper.
3	Gate (G)	Control input; requires <5.7 Ω gate resistance to limit ringing and ensure stable switching per datasheet test conditions.
4	Source (S)	Power return node; referenced for gate drive and used as local ground for current sensing in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD; supports ASIL-B system integration.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness-no statistical sampling.
TrenchFET® architecture	Enables lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs, improving efficiency in 100–500 kHz switching applications.
175 °C maximum junction temperature	Permits operation in engine bay environments without derating beyond datasheet thermal limits; validated over full temperature range.
Body diode with t_rr ≤ 38 ns	Fast, soft-recovery intrinsic diode reduces switching losses and voltage overshoot in synchronous rectification and freewheeling paths.

Applications

Automotive Body Control Module (BCM)	48 V Mild Hybrid DC-DC Converter
Use Scenario: Switching power distribution for lighting, window lift, and seat actuation loads in modern BCMs. IC Role / Device Role / Timing Role: Low-side load switch controlling 12 V/24 V resistive and inductive loads. Use Value: AEC-Q101 qualification and 175 °C rating ensure long-term reliability in sealed, thermally constrained modules.	Use Scenario: Synchronous rectification stage in bidirectional buck-boost converter between 12 V and 48 V domains. IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) power switch with low R_DS(on) and fast body diode recovery. Use Value: 0.042 Ω R_DS(on) at 10 V and Q_rr = 18–36 nC minimize conduction and recovery losses at partial load.
Electric Power Steering (EPS) Motor Driver	Industrial PLC Output Stage
Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS motor. IC Role / Device Role / Timing Role: High-side or low-side switching element with avalanche energy rating for fault handling. Use Value: 5 mJ E_AS and 10 A I_AS provide margin against inductive kickback during phase commutation faults.	Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules. IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO to 24 V industrial solenoids and indicators. Use Value: Logic-level gate drive (V_GS(th) max 2.5 V) ensures full enhancement with 3.3 V MCU outputs without level-shifting.

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: Switching power distribution for lighting, window lift, and seat actuation loads in modern BCMs.

IC Role / Device Role / Timing Role: Low-side load switch controlling 12 V/24 V resistive and inductive loads.

Use Value: AEC-Q101 qualification and 175 °C rating ensure long-term reliability in sealed, thermally constrained modules.

Use Scenario: Synchronous rectification stage in bidirectional buck-boost converter between 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) power switch with low R_DS(on) and fast body diode recovery.

Use Value: 0.042 Ω R_DS(on) at 10 V and Q_rr = 18–36 nC minimize conduction and recovery losses at partial load.

Electric Power Steering (EPS) Motor Driver

Industrial PLC Output Stage

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS motor.

IC Role / Device Role / Timing Role: High-side or low-side switching element with avalanche energy rating for fault handling.

Use Value: 5 mJ E_AS and 10 A I_AS provide margin against inductive kickback during phase commutation faults.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules.

IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO to 24 V industrial solenoids and indicators.

Use Value: Logic-level gate drive (V_GS(th) max 2.5 V) ensures full enhancement with 3.3 V MCU outputs without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470TRPBF	R_DS(on) = 0.045 Ω @ 10 V, but not AEC-Q101 qualified; R_thJA = 125 °C/W (higher thermal resistance).	Not suitable for automotive under-hood use; acceptable for industrial ambient <125 °C.	Select only if AEC-Q101 is not required and thermal margin permits higher junction rise.
DMN3026LFG-7	R_DS(on) = 0.032 Ω @ 10 V, AEC-Q101 qualified, but TSOP-6 pinout differs (G/S/D/S/G/D vs. D/D/G/S/D/D); non-pin-compatible.	Requires PCB layout revision; better conduction loss but higher gate charge (14 nC).	Consider for efficiency-critical designs where board re-spin is feasible and gate drive capability supports higher Q_g.

Compared with IRF7470TRPBF and DMN3026LFG-7, SQ3426CEV-T1_GE3 delivers balanced trade-offs: certified automotive reliability, industry-leading thermal resistance (R_thJA = 110 °C/W), and verified body diode performance-making it optimal for cost-sensitive, thermally constrained automotive power switches.

Availability

SQ3426CEV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, 48 V mild hybrid systems, electric power steering modules, and industrial programmable logic controller output stages requiring stable component supply and long-term lifecycle support.

Supply support for SQ3426CEV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The SQ3426CEV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for demanding under-hood and chassis-mounted power switching applications requiring AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum continuous drain current rating for SQ3426CEV-T1_GE3 at 125 °C case temperature?

The SQ3426CEV-T1_GE3 has a continuous drain current rating of 4 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package and must be applied when designing for sustained operation in high-ambient environments such as engine compartments. The SQ3426CEV-T1_GE3 maintains full functionality and reliability within this limit when mounted per recommended PCB layout guidelines.

Is SQ3426CEV-T1_GE3 suitable for 3.3 V microcontroller gate drive?

Yes, SQ3426CEV-T1_GE3 is compatible with 3.3 V logic-level drive due to its gate threshold voltage range of 1.5–2.5 V and confirmed R_DS(on) of 0.063 Ω at V_GS = 4.5 V. At 3.3 V, the device remains enhanced with usable on-resistance-though higher than at 4.5 V-and is widely deployed in automotive modules using 3.3 V MCUs. Full characterization data for V_GS = 3.3 V is available in the Transfer Characteristics graph on page 3 of the datasheet for SQ3426CEV-T1_GE3.

Does SQ3426CEV-T1_GE3 include integrated ESD protection on the gate terminal?

SQ3426CEV-T1_GE3 does not specify integrated gate ESD protection diodes in its datasheet. Gate-source leakage is rated at ±100 nA at ±12 V and ±300 nA at ±20 V, consistent with standard MOSFET gate oxide integrity. System-level ESD protection (e.g., external TVS or series resistor) is recommended per automotive EMC standards. The SQ3426CEV-T1_GE3 gate oxide is qualified per AEC-Q101 HBM Class 2 (≥2 kV), but no dedicated on-chip clamp structures are documented.

What is the thermal resistance from junction to foot (R_thJF) for SQ3426CEV-T1_GE3?

The junction-to-foot thermal resistance (R_thJF) for SQ3426CEV-T1_GE3 is 30 °C/W, as published in the Thermal Resistance Ratings table. This parameter quantifies heat flow from the silicon die directly to the exposed drain pad (foot) of the TSOP-6 package and is critical for estimating junction temperature when the device is soldered to a thermally enhanced PCB layer. R_thJF = 30 °C/W enables accurate thermal modeling independent of ambient convection effects-key for SQ3426CEV-T1_GE3 deployment in sealed enclosures.

How is the avalanche ruggedness of SQ3426CEV-T1_GE3 validated?

SQ3426CEV-T1_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per AEC-Q101 requirements, with single-pulse avalanche energy (E_AS) rated at 5 mJ and peak avalanche current (I_AS) at 10 A. These values are measured using standardized L = 0.1 mH test circuits and represent worst-case inductive energy absorption capability without failure. This validation ensures SQ3426CEV-T1_GE3 can safely handle transient overvoltage events in motor drive and solenoid control applications.

SQ3426CEV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3426CEV-T1_GE3 FAQ

1.How can I place an order for SQ3426CEV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3426CEV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3426CEV-T1_GE3 reliable?

The price and inventory of SQ3426CEV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3426CEV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3426CEV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3426CEV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3426CEV-T1_GE3?

SQ3426CEV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3426CEV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3426CEV-T1_GE3?

For technical support, including SQ3426CEV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3426CEV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3426CEV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3426CEV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3426CEV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3426CEV-T1_GE3?

All SQ3426CEV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3426CEV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3426CEV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3426CEV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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