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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3426EEV-T1-GE3

Name: SQ3426EEV-T1-GE3
Brand: Vishay Siliconix
SKU: SQ3426EEV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3426EEV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3426EEV-T1-GE3.pdf

Description:: MOSFET N-CH 60V 7A 6TSOP

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Inventory:3,320

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Product details

Overview

SQ3426EEV-T1-GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 7 A continuous drain current at 25 °C, and 0.042 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, body electronics, and DC motor drive circuits.

For engineers reviewing the SQ3426EEV-T1-GE3 datasheet, SQ3426EEV-T1-GE3 pinout, SQ3426EEV-T1-GE3 application, or SQ3426EEV-T1-GE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (R_thJA = 110 °C/W), 100 % R_g and UIS tested reliability, and gate threshold voltage range of 1.5–2.5 V under automotive operating conditions.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its 0.063 Ω R_DS(on) at V_GS = 4.5 V enables robust operation with standard logic-level gate drivers, while 7.6 nC total gate charge supports efficient PWM control in motor and load-switching applications.

The device integrates a built-in body diode with 0.75–1.2 V forward voltage at 1.6 A, and features 800 V HBM ESD protection. Its safe operating area is defined by R_DS(on)-limited conduction, avalanche energy rating of 5 mJ, and pulsed drain current capability of 29 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 42 V automotive systems and transient surge tolerance per ISO 7637-2.
R_DS(on) @ V_GS = 10 V	0.042 Ω - Enables ≤ 2.1 W conduction loss at 7 A, supporting thermally constrained PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.063 Ω - Ensures reliable turn-on with 5 V microcontroller outputs without level-shifting circuitry.
I_D (continuous) @ T_C = 25 °C	7 A - Sustains steady-state loads such as radiator fan motors or seat actuator drivers.
T_J max	+175 °C - Meets under-hood temperature requirements for engine management and transmission control modules.
Q_g	7.6 nC - Reduces gate drive power and switching losses in high-frequency (>100 kHz) PWM applications.
E_AS	5 mJ - Absorbs inductive kickback energy during fault events in solenoid and relay driver circuits.

Pinout & Package

Package: TSOP-6 surface-mount package with exposed drain pad for enhanced thermal dissipation; footprint matches JEDEC MO-178AB standard.

Pin/Terminal	Circuit Role	Design Meaning
(1, 2, 5, 6) D	Drain	High-current output node connected to internal power die and exposed thermal pad; requires direct PCB copper pour for heat transfer.
(3) G	Gate	Control input with 1.2–3.6 Ω gate resistance; sensitive to ESD and requires RC snubbing in high-dI/dt environments.
(4) S	Source	Power return path and reference for gate drive; tied to system ground plane to minimize common-mode noise in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use across -55 °C to +175 °C with extended lifetime testing per stress test conditions.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for motor commutation reliability.
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling smaller TSOP-6 footprint without sacrificing current handling.
800 V HBM ESD protection	Withstands electrostatic discharge during assembly and service without external protection components in controlled environments.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Control
Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition rates. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; must withstand 80 V inductive flyback and operate continuously at 150 °C ambient. Use Value: 0.042 Ω R_DS(on) limits power loss to <1.5 W at peak current, while 5 mJ E_AS safely clamps flyback energy without external TVS.	Use Scenario: PWM-controlled DC blower motor in passenger cabin HVAC system with variable speed and reverse polarity braking. IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration; requires fast turn-off (<30 ns fall time) and low gate charge for 20 kHz PWM. Use Value: 7.6 nC Q_g and 11 ns typical fall time enable efficient 20 kHz switching with minimal gate driver power consumption.
Body Control Module (BCM) Power Window Driver	Start-Stop System Solenoid Actuator
Use Scenario: Bidirectional window lift/lower control using dual-MOSFET H-bridge with overcurrent and thermal shutdown monitoring. IC Role / Device Role / Timing Role: High-current N-channel switch in low-side position; handles 15 A inrush and sustains 6 A continuous during full-load operation. Use Value: 29 A pulsed drain current rating accommodates motor startup surges, while +175 °C T_J rating ensures reliability during prolonged stall conditions.	Use Scenario: 12 V solenoid actuation for starter motor engagement/disengagement in 48 V mild-hybrid start-stop systems. IC Role / Device Role / Timing Role: Single-pole power switch driving inductive solenoid load with 100 ms on-time and 500 ms off-time duty cycle. Use Value: 100 % UIS tested performance guarantees survival through repeated unclamped inductive switching events without degradation.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Control

Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition rates.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; must withstand 80 V inductive flyback and operate continuously at 150 °C ambient.

Use Value: 0.042 Ω R_DS(on) limits power loss to <1.5 W at peak current, while 5 mJ E_AS safely clamps flyback energy without external TVS.

Use Scenario: PWM-controlled DC blower motor in passenger cabin HVAC system with variable speed and reverse polarity braking.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration; requires fast turn-off (<30 ns fall time) and low gate charge for 20 kHz PWM.

Use Value: 7.6 nC Q_g and 11 ns typical fall time enable efficient 20 kHz switching with minimal gate driver power consumption.

Body Control Module (BCM) Power Window Driver

Start-Stop System Solenoid Actuator

Use Scenario: Bidirectional window lift/lower control using dual-MOSFET H-bridge with overcurrent and thermal shutdown monitoring.

IC Role / Device Role / Timing Role: High-current N-channel switch in low-side position; handles 15 A inrush and sustains 6 A continuous during full-load operation.

Use Value: 29 A pulsed drain current rating accommodates motor startup surges, while +175 °C T_J rating ensures reliability during prolonged stall conditions.

Use Scenario: 12 V solenoid actuation for starter motor engagement/disengagement in 48 V mild-hybrid start-stop systems.

IC Role / Device Role / Timing Role: Single-pole power switch driving inductive solenoid load with 100 ms on-time and 500 ms off-time duty cycle.

Use Value: 100 % UIS tested performance guarantees survival through repeated unclamped inductive switching events without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.045 Ω @ 10 V; TSOP-6; no AEC-Q101 qualification; higher Q_g (10.5 nC)	Not approved for automotive safety-critical systems; suitable for industrial or consumer-grade 12 V motor drives.	Select only if AEC-Q101 compliance is not required and higher gate drive power is acceptable.
DMN3026LFG-7	R_DS(on) = 0.038 Ω @ 10 V; X1-DFN package; AEC-Q101 qualified; lower R_thJA (70 °C/W)	Requires different PCB layout due to DFN footprint and bottom-side thermal pad; better thermal performance but no leaded option.	Prefer when board space is constrained and thermal performance is prioritized over TSOP-6 compatibility.

Compared with IRF7470PBF and DMN3026LFG-7, the SQ3426EEV-T1-GE3 offers balanced trade-offs: AEC-Q101 compliance with TSOP-6 manufacturability, moderate R_DS(on), and proven UIS robustness-making it optimal for cost-sensitive yet reliability-critical automotive body and powertrain modules.

Availability

SQ3426EEV-T1-GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and DC motor drive applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SQ3426EEV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ3426EEV-T1-GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability 12 V/42 V vehicle subsystems where thermal resilience, surge immunity, and long-term parametric stability are mandatory.

FAQ

What is the maximum junction temperature rating for the SQ3426EEV-T1-GE3?

The SQ3426EEV-T1-GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress test conditions. This rating allows deployment in under-hood environments such as engine control units and transmission control modules where ambient temperatures exceed 125 °C. The device maintains specified R_DS(on) and switching parameters across this full range, with derating applied above T_C = 125 °C per the absolute maximum ratings table.

Is the SQ3426EEV-T1-GE3 pin-compatible with other TSOP-6 N-channel MOSFETs?

The SQ3426EEV-T1-GE3 uses the standard TSOP-6 pinout: pins 1, 2, 5, and 6 are Drain; pin 3 is Gate; pin 4 is Source. While many TSOP-6 MOSFETs share this configuration, pin compatibility alone does not guarantee functional interchangeability-R_DS(on), Q_g, and thermal characteristics differ significantly across vendors. Always verify gate drive requirements and SOA boundaries before substitution.

Does the SQ3426EEV-T1-GE3 require external gate resistors in automotive applications?

The SQ3426EEV-T1-GE3 benefits from an external gate resistor (typically 5–22 Ω) to dampen ringing and limit dV/dt-induced shoot-through in bridge configurations. Its intrinsic gate resistance is 1.2–3.6 Ω, but real-world PCB parasitics and driver output impedance necessitate external tuning. For fuel injector drivers, a 10 Ω series resistor is commonly used to achieve clean 10–20 ns rise/fall times while minimizing EMI.

What is the significance of the "-T1-GE3" suffix in SQ3426EEV-T1-GE3?

The "-T1-GE3" suffix denotes tape-and-reel packaging (T1), lead (Pb)-free and halogen-free construction (G), and compliance with Vishay's green electronics standards (E3). This ordering code specifies the commercial-grade reel format containing 3,000 units per reel, compatible with automated SMT placement equipment and meeting RoHS Directive 2011/65/EU and JEDEC JS-709C material requirements.

How is the SQ3426EEV-T1-GE3 protected against unclamped inductive switching events?

The SQ3426EEV-T1-GE3 undergoes 100 % unclamped inductive switching (UIS) testing per AEC-Q101, with a single-pulse avalanche energy rating of 5 mJ at L = 0.1 mH. This ensures survivability during worst-case inductive turn-off transients-such as those generated by fuel injectors or solenoids-without external snubbers. The device's avalanche-rated silicon structure absorbs energy by entering controlled breakdown, preventing catastrophic failure.

SQ3426EEV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3426EEV-T1-GE3 FAQ

1.How can I place an order for SQ3426EEV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3426EEV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3426EEV-T1-GE3 reliable?

The price and inventory of SQ3426EEV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3426EEV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SQ3426EEV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3426EEV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3426EEV-T1-GE3?

SQ3426EEV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3426EEV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3426EEV-T1-GE3?

For technical support, including SQ3426EEV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3426EEV-T1-GE3 requirements.

6.How does Aetrix verify that SQ3426EEV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3426EEV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3426EEV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SQ3426EEV-T1-GE3?

All SQ3426EEV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3426EEV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3426EEV-T1-GE3 part is unused and in its original packaging.

Return procedure for SQ3426EEV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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