My Inquiry
My Account
Vishay Siliconix SQ3426EV-T1_BE3
- Part No.:
- SQ3426EV-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3426EV-T1_BE3.pdf
- Description:
- MOSFET N-CHANNEL 60V 7A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,126
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQ3426EV-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 7 A continuous drain current at 25 °C, and 0.042 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, LED lighting, and DC-DC converter high-side switching.
For engineers reviewing the SQ3426EV-T1_BE3 datasheet, SQ3426EV-T1_BE3 pinout, SQ3426EV-T1_BE3 application, or SQ3426EV-T1_BE3 equivalent, this page delivers verified thermal ratings, gate charge (6.3–12 nC), RDS(on) vs. temperature behavior, and TSOP-6 package layout compatibility for automotive PCB design validation.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching performance: typical total gate charge is 6.3–12 nC, turn-on delay is 9–14 ns, and fall time is 7–11 ns under standard test conditions (VDD = 30 V, Rg = 1 Ω). Its 100 % Rg and UIS tested construction ensures robustness in repetitive avalanche and gate-drive mismatch scenarios.
The device features a thermally enhanced TSOP-6 package with integrated drain-to-foot thermal path (RthJF = 30 °C/W) and is characterized across -55 °C to +175 °C, supporting operation in engine control units and battery management systems where ambient temperatures exceed 125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive bus applications with transient margin. |
| RDS(on) @ VGS = 10 V | 0.042 Ω - Enables ≤ 1.5 W conduction loss at 6 A, critical for thermally constrained modules. |
| RDS(on) @ VGS = 4.5 V | 0.063 Ω - Supports logic-level drive from 3.3 V/5 V microcontrollers without gate boosters. |
| ID (continuous) | 7 A @ TC = 25 °C - Sustains motor stall currents in small BLDC drivers and solenoid interfaces. |
| EAS | 5 mJ - Rated single-pulse avalanche energy supports inductive load switching without snubbers. |
| TJ max | +175 °C - Qualified for under-hood placement in transmission control modules and ADAS power stages. |
| Qg | 6.3–12 nC - Low gate charge enables efficient PWM operation up to 500 kHz in compact DC-DC regulators. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C) with exposed drain pad for thermal enhancement; footprint matches standard 6-lead TSOP land pattern (0.95 mm pitch, 3.05 mm × 2.85 mm body).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Internally connected to exposed copper pad - primary thermal and current path to PCB ground plane. |
| 3 | Gate (G) | High-impedance control input requiring <300 nA leakage at ±20 V; sensitive to ESD (HBM >2 kV). |
| 4 | Source (S) | Reference node for gate drive and current sensing; tied to low-side return in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UHAST - required for ASIL-B subsystems. |
| 100 % Rg testing | Ensures gate resistance consistency (1.9–5.7 Ω), critical for predictable switching timing and EMI control. |
| TrenchFET® architecture | Delivers 21 S transconductance and low Crss (55–70 pF), minimizing Miller-induced shoot-through risk. |
| 100 % UIS testing | Guarantees ruggedness against unclamped inductive switching events common in motor drives and relay coils. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly. |
Applications
| Automotive Body Control Module | LED Headlamp Driver |
|---|---|
Use Scenario: Switching 12 V supply to door lock actuators and window lift motors with intermittent duty. IC Role / Device Role / Timing Role: High-side load switch controlling up to 7 A peak current with fast turn-off to prevent back-EMF damage. Use Value: 0.042 Ω RDS(on) limits power dissipation to <2 W at full load, enabling compact heatsinkless design in tight BCM enclosures. |
Use Scenario: PWM dimming of high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Low-loss, high-frequency (≥200 kHz) switching element in buck-based constant-current driver stage. Use Value: 6.3–12 nC gate charge and 7–11 ns fall time enable clean PWM edges with minimal switching loss at 300 kHz. |
| Engine Control Unit Power Stage | 48 V Mild Hybrid DC-DC Converter |
Use Scenario: Driving fuel injector solenoids and ignition coil primaries in gasoline direct injection systems. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated switch handling inductive kickback up to 100 V transients. Use Value: 5 mJ EAS rating eliminates need for external clamping diodes, reducing BOM count and board area. |
Use Scenario: Synchronous rectification in bidirectional 12 V/48 V DC-DC converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Low-RDS(on) N-channel MOSFET used in high-side position with bootstrap gate drive. Use Value: 0.063 Ω RDS(on) at 4.5 V gate drive allows direct control from 5 V controller outputs, simplifying gate driver design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL10DN6LF5 | Lower RDS(on) (0.028 Ω @ 10 V) but higher Qg (14 nC); same TSOP-6 package. | Better conduction efficiency at high current; less suitable for high-frequency PWM due to higher gate charge. | Select when thermal budget dominates over switching frequency constraints. |
| ON Semiconductor NTMFS4C06NT1G | Higher ID (12 A) and lower RDS(on) (0.022 Ω @ 10 V); larger SO-8 package (not TSOP-6). | Requires PCB layout change; better for high-current, low-duty-cycle loads like HVAC blowers. | Choose only if board space permits SO-8 and peak current exceeds 7 A. |
Compared with STL10DN6LF5 and NTMFS4C06NT1G, the SQ3426EV-T1_BE3 offers optimal balance of low gate charge, TSOP-6 footprint, and AEC-Q101 compliance - making it preferred for space-constrained, high-frequency automotive switches where layout reuse is critical.
Availability
SQ3426EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, and engine control unit power stages requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQ3426EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ3426EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for under-hood power switching with guaranteed AEC-Q101 qualification and extended temperature operation.
FAQ
What is the maximum continuous drain current rating for SQ3426EV-T1_BE3 at 125 °C case temperature?
The SQ3426EV-T1_BE3 supports 4 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package and must be validated against actual PCB copper area and airflow in the target application. The SQ3426EV-T1_BE3 maintains safe operation within its SOA curve up to this current level when mounted per recommended land pattern.
Is SQ3426EV-T1_BE3 suitable for high-side switching with 3.3 V microcontroller gate drive?
Yes - the SQ3426EV-T1_BE3 has RDS(on) = 0.063 Ω at VGS = 4.5 V and gate threshold voltage VGS(th) = 1.5–2.5 V, enabling reliable turn-on with 3.3 V logic when driven through a level-shifting buffer or dedicated gate driver. However, full 7 A capability requires ≥4.5 V gate drive; the SQ3426EV-T1_BE3 should not be operated near its maximum current with only 3.3 V applied directly to the gate.
Does SQ3426EV-T1_BE3 include integrated ESD protection on the gate terminal?
No - the SQ3426EV-T1_BE3 does not integrate ESD protection diodes. Its gate oxide is rated for HBM >2 kV per AEC-Q101, but external TVS or RC filtering is recommended in high-noise automotive environments. The SQ3426EV-T1_BE3 gate leakage remains ≤±300 nA at ±20 V, confirming absence of internal clamps that would increase leakage.
What is the thermal resistance from junction to foot (RthJF) for SQ3426EV-T1_BE3, and how is it used in thermal design?
The SQ3426EV-T1_BE3 has RthJF = 30 °C/W, measured from junction to the exposed drain pad (foot). This value enables accurate modeling of heat flow into the PCB copper plane, especially when using multiple thermal vias under the pad. Unlike RthJA, RthJF is stable across board layouts - the SQ3426EV-T1_BE3 benefits most from optimized copper pour and via density rather than ambient airflow.
Can SQ3426EV-T1_BE3 replace older Vishay Si3426DV in existing designs?
Yes - the SQ3426EV-T1_BE3 is a direct drop-in replacement for Si3426DV, sharing identical TSOP-6 pinout, marking code (8Q), and electrical specifications. Both are AEC-Q101 qualified and share the same RDS(on), Qg, and thermal ratings. The SQ3426EV-T1_BE3 supersedes Si3426DV with updated process control and extended lifetime reliability data, requiring no PCB or firmware changes.
SQ3426EV-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 720 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3426EV-T1_BE3 FAQ
1.How can I place an order for SQ3426EV-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3426EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3426EV-T1_BE3 reliable?
The price and inventory of SQ3426EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3426EV-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ3426EV-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3426EV-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3426EV-T1_BE3?
SQ3426EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3426EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3426EV-T1_BE3?
For technical support, including SQ3426EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3426EV-T1_BE3 requirements.
6.How does Aetrix verify that SQ3426EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ3426EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3426EV-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ3426EV-T1_BE3?
All SQ3426EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3426EV-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3426EV-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ3426EV-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQ3426EV-T1_BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
