Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3426EV-T1_GE3

Name: SQ3426EV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3426EV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ3426EV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3426EV-T1_GE3.pdf

Description:: MOSFET N-CHANNEL 60V 7A 6TSOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:40,740

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ3426EV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V (D–S), with R_DS(on) = 0.042 Ω at V_GS = 10 V and 0.063 Ω at V_GS = 4.5 V, delivering 7 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, LED lighting, and body electronics.

For engineers reviewing the SQ3426EV-T1_GE3 datasheet, SQ3426EV-T1_GE3 pinout, SQ3426EV-T1_GE3 application, or SQ3426EV-T1_GE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (R_thJF = 30 °C/W), 100 % R_g and UIS testing, and guaranteed gate charge (Q_g = 6.3–12 nC) for predictable switching in 12 V automotive systems.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC–DC converters and load-switching applications. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while the integrated body diode supports freewheeling in inductive loads.

The device features a thermally enhanced TSOP-6 package with four drain terminals (pins 1, 2, 5, 6), one source (pin 4), and one gate (pin 3), enabling low-inductance layout and efficient heat transfer through the drain pad to PCB copper. Its R_DS(on) remains stable across -55 °C to +175 °C, supporting operation in extreme ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V nominal systems and 12 V automotive battery transients up to ±60 V.
R_DS(on) @ V_GS = 10 V	0.042 Ω - Enables ≤0.21 W conduction loss at 7 A, reducing thermal stress in compact PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.063 Ω - Ensures reliable turn-on with standard logic-level drivers in start-stop and low-voltage wake-up circuits.
I_D Continuous @ T_C = 25 °C	7 A - Supports high-side or low-side switching of solenoids, fans, and LED arrays without external heatsinking.
Q_g Total Gate Charge	6.3–12 nC - Predictable switching energy for accurate gate driver sizing and EMI estimation in 100–500 kHz PWM designs.
T_J Operating Range	-55 to +175 °C - Qualified for engine bay, transmission control, and ADAS sensor power stages per AEC-Q101 Rev D.
R_thJF	30 °C/W - Low junction-to-foot thermal resistance allows direct thermal coupling to inner-layer copper planes for passive cooling.

Pinout & Package

TSOP-6 surface-mount package with exposed drain pad for thermal and electrical connection; dimensions per JEDEC MO-193C (3.05 mm × 2.85 mm × 1.0 mm).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals connected to internal die drain metallization and exposed thermal pad - must be soldered to large PCB copper area for thermal management.
4	Source (S)	Single-source terminal; forms return path for load current and reference node for gate drive - requires low-impedance ground plane routing.
3	Gate (G)	Control input with typical gate resistance R_g = 1.9–5.7 Ω - sensitive to noise; requires local RC snubber or gate resistor for dV/dt control in high-noise environments.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, UHAST, and ESD testing - eliminates need for customer requalification in Tier-1 modules.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor commutation and relay driving.
TrenchFET® architecture	Optimized cell pitch and trench depth yield lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs - improves efficiency in space-constrained 12 V buck regulators.
Low C_iss/C_oss ratio	C_iss = 560–720 pF, C_oss = 85–110 pF - enables zero-voltage switching (ZVS) capability in resonant topologies and reduces Miller-induced shoot-through risk.
Enhanced avalanche rating	E_AS = 5 mJ - withstands repetitive inductive energy spikes during fault events without degradation - critical for solenoid and fuel injector drivers.

Applications

Automotive Body Control Module	LED Headlamp Driver
Use Scenario: Switching 12 V power to door locks, window lifters, and mirror actuators in BCM subassemblies. IC Role / Device Role / Timing Role: Low-side load switch controlling resistive/inductive loads with PWM dimming or timed actuation. Use Value: R_DS(on) stability over temperature ensures consistent torque delivery across -40 °C to +85 °C cabin environments.	Use Scenario: High-efficiency constant-current switching for adaptive front-lighting system (AFS) matrix LED arrays. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 200–300 kHz. Use Value: Low Q_g and fast t_r/t_f (12–18 ns / 7–11 ns) minimize switching losses and enable precise current regulation.
Engine Management System	Start-Stop System Load Switch
Use Scenario: Driving fuel injectors and ignition coil primary windings in gasoline direct injection (GDI) engines. IC Role / Device Role / Timing Role: High-speed, high-reliability switch handling repetitive 5–20 A pulsed currents with <100 ns turn-off. Use Value: 100 % UIS testing and 10 A single-pulse avalanche current (I_AS) ensure survival during coil flyback transients.	Use Scenario: Isolating auxiliary 12 V loads (HVAC blower, infotainment) during engine cranking to maintain bus voltage. IC Role / Device Role / Timing Role: Controlled high-side switch activated by MCU GPIO with soft-start via gate resistor tuning. Use Value: V_GS(th) tolerance (1.5–2.5 V) guarantees turn-on even at 9 V battery sag, preventing unintended load dropout.

Automotive Body Control Module

LED Headlamp Driver

Use Scenario: Switching 12 V power to door locks, window lifters, and mirror actuators in BCM subassemblies.

IC Role / Device Role / Timing Role: Low-side load switch controlling resistive/inductive loads with PWM dimming or timed actuation.

Use Value: R_DS(on) stability over temperature ensures consistent torque delivery across -40 °C to +85 °C cabin environments.

Use Scenario: High-efficiency constant-current switching for adaptive front-lighting system (AFS) matrix LED arrays.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 200–300 kHz.

Use Value: Low Q_g and fast t_r/t_f (12–18 ns / 7–11 ns) minimize switching losses and enable precise current regulation.

Engine Management System

Start-Stop System Load Switch

Use Scenario: Driving fuel injectors and ignition coil primary windings in gasoline direct injection (GDI) engines.

IC Role / Device Role / Timing Role: High-speed, high-reliability switch handling repetitive 5–20 A pulsed currents with <100 ns turn-off.

Use Value: 100 % UIS testing and 10 A single-pulse avalanche current (I_AS) ensure survival during coil flyback transients.

Use Scenario: Isolating auxiliary 12 V loads (HVAC blower, infotainment) during engine cranking to maintain bus voltage.

IC Role / Device Role / Timing Role: Controlled high-side switch activated by MCU GPIO with soft-start via gate resistor tuning.

Use Value: V_GS(th) tolerance (1.5–2.5 V) guarantees turn-on even at 9 V battery sag, preventing unintended load dropout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N06LS3	R_DS(on) = 0.0014 Ω @ 10 V (lower), but larger PG-TSDSON-8 package and higher Q_g (28 nC); not AEC-Q101 qualified.	Targeted at high-efficiency server PSUs, not automotive under-hood use.	Select only for non-automotive industrial 60 V switching where footprint and qualification are secondary.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 0.009 Ω @ 10 V, SO-8FL package, AEC-Q101 qualified, but higher C_iss (1750 pF) and no R_thJF spec.	Better for high-current (>20 A), lower-frequency (<100 kHz) applications like seat heater control.	Prefer when board space permits larger SO-8FL and peak current exceeds 10 A - not drop-in for TSOP-6 layout.

Compared with BSC014N06LS3 and NTMFS4C09NT1G, the SQ3426EV-T1_GE3 offers optimal balance of AEC-Q101 compliance, TSOP-6 footprint, and mid-range R_DS(on)/Q_g for cost-sensitive 7 A automotive switches where thermal coupling to PCB is prioritized over ultra-low on-resistance.

Availability

SQ3426EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, and engine management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ3426EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3426EV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for under-hood power switching where AEC-Q101 reliability, thermal robustness, and gate-drive compatibility with low-voltage MCUs are mandatory.

FAQ

What is the maximum continuous drain current rating for SQ3426EV-T1_GE3 at 125 °C case temperature?

The SQ3426EV-T1_GE3 supports 4 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package and ensures safe operation in high-ambient under-hood locations. The device maintains R_DS(on) stability up to 175 °C junction temperature, making it suitable for sustained 4 A loads with appropriate PCB copper area.

Is SQ3426EV-T1_GE3 suitable for high-side switching configurations?

Yes, SQ3426EV-T1_GE3 can be used in high-side switching applications when paired with a gate driver capable of providing V_GS ≥ 10 V relative to the source node. Its 60 V V_DS rating and AEC-Q101 qualification make it appropriate for 12 V automotive high-side loads such as HVAC blowers and headlamp leveling motors, provided gate drive isolation and bootstrap timing are properly designed.

Does SQ3426EV-T1_GE3 have an integrated ESD protection diode on the gate?

No, SQ3426EV-T1_GE3 does not integrate gate ESD protection diodes. Its gate-source leakage (I_GSS) is specified at ±100 nA (±12 V) and ±300 nA (±20 V), confirming absence of clamping structures. External gate protection - such as a 12 V Zener between gate and source - is recommended in noisy automotive environments to prevent gate oxide damage during assembly or system transients.

What is the typical gate threshold voltage range for SQ3426EV-T1_GE3, and how does it affect MCU compatibility?

The SQ3426EV-T1_GE3 has a gate threshold voltage (V_GS(th)) range of 1.5 V to 2.5 V at I_D = 250 μA. This low-threshold design ensures full enhancement with 3.3 V and 5 V logic outputs, enabling direct drive from automotive microcontrollers without level-shifting. However, designers must verify gate drive strength to avoid partial turn-on during voltage transitions, especially in PWM dimming circuits.

Can SQ3426EV-T1_GE3 replace older Vishay SQ3426E parts in existing designs?

Yes, SQ3426EV-T1_GE3 is a direct replacement for SQ3426E variants with identical pinout, electrical specifications, and TSOP-6 package dimensions. The "V" suffix denotes updated wafer fabrication and AEC-Q101 qualification per Rev C datasheet (2022), offering improved UIS robustness and tighter R_DS(on) distribution. No PCB or firmware changes are required for migration from legacy SQ3426E to SQ3426EV-T1_GE3.

SQ3426EV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 720 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3426EV-T1_GE3 FAQ

1.How can I place an order for SQ3426EV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3426EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3426EV-T1_GE3 reliable?

The price and inventory of SQ3426EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3426EV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3426EV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3426EV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3426EV-T1_GE3?

SQ3426EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3426EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3426EV-T1_GE3?

For technical support, including SQ3426EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3426EV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3426EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3426EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3426EV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3426EV-T1_GE3?

All SQ3426EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3426EV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3426EV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3426EV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …