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Vishay Siliconix SQ3427EV-T1_BE3
- Part No.:
- SQ3427EV-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3427EV-T1_BE3.pdf
- Description:
- MOSFET P-CH 60V 5.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,740
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Product details
Overview
SQ3427EV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 0.095 Ω RDS(on) at VGS = -10 V and -4.5 A, and 175 °C maximum junction temperature. It serves as a high-reliability load switch in 12 V/24 V automotive power distribution systems including body control modules and seat/mirror actuators.
For engineers reviewing the SQ3427EV-T1_BE3 datasheet, SQ3427EV-T1_BE3 pinout, SQ3427EV-T1_BE3 application, or SQ3427EV-T1_BE3 equivalent, this page delivers verified electrical parameters, TSOP-6 terminal mapping, AEC-Q101 qualification status, thermal resistance data, and validated alternative parts for automotive power switching design.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching with gate charge of 15.3 nC (typ) and 22 nC (max) at VGS = -10 V. Its -2.0 V typical gate threshold voltage enables robust turn-on with standard 5 V or 3.3 V logic-level gate drivers in high-side configurations.
The MOSFET integrates a built-in source-drain diode with -0.8 V forward voltage at -1.6 A and supports pulsed avalanche energy up to 22 mJ. Thermal design is enabled by RthJA = 110 °C/W (PCB mount) and RthJF = 30 °C/W (junction-to-foot), confirming suitability for thermally constrained automotive PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Withstands transients up to ISO 7637-2 Pulse 1 (-100 V) when used with appropriate clamping. |
| RDS(on) @ VGS = -10 V | 0.095 Ω - Delivers ≤ 2.16 W conduction loss at -4.5 A continuous current (TC = 25 °C). |
| RDS(on) @ VGS = -4.5 V | 0.135 Ω - Ensures functional switching with 5 V microcontroller GPIO without level-shifting. |
| ID Continuous | -5.3 A - Supports automotive loads such as door lock solenoids (≤ 5 A peak) with derating above 125 °C. |
| Qg | 15.3 nC (typ) - Enables <12 ns turn-on delay and <35 ns rise time with 1 Ω gate resistor at -10 V drive. |
| TJ Range | -55 to +175 °C - Qualified per AEC-Q101 for under-hood applications including engine control units. |
| EAS | 22 mJ - Provides single-pulse avalanche ruggedness for inductive load switching without external snubbers. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 1.05 mm max height. Optimized for automated placement and reflow soldering on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain terminals reduce package inductance and improve current sharing in high-di/dt switching. |
| 3 | Gate (G) | Single gate input with 5 Ω typical gate resistance - compatible with standard logic-level drivers and PWM controllers. |
| 4 | Source (S) | Isolated source terminal enables high-side configuration with referenced gate drive and accurate current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 0.095 Ω RDS(on) in TSOP-6 - 30 % lower on-resistance than planar P-channel alternatives at same voltage rating. |
| AEC-Q101 qualified | Validated for automotive use with 100 % Rg and UIS testing - meets reliability requirements for safety-critical body electronics. |
| 100 % Rg tested | Guarantees gate resistance between 2.5–7.5 Ω - ensures predictable switching speed and EMI performance across production lots. |
| Source-drain diode | VSD = -0.8 V at -1.6 A - provides freewheeling path for inductive loads without external diode in relay or motor drive circuits. |
| 175 °C operation | Supports placement near heat sources (e.g., power converters) without derating - extends system lifetime in high-ambient environments. |
Applications
| Automotive Body Control Module | Seat/Mirror Positioning Actuator |
|---|---|
Use Scenario: Switching 12 V power to window lift motors, door locks, and interior lighting in centralized BCMs. IC Role / Device Role / Timing Role: High-side load switch controlling current flow to resistive/inductive loads with reverse polarity protection. Use Value: Low RDS(on) minimizes voltage drop and self-heating during sustained 4–5 A operation; AEC-Q101 ensures 15+ year field reliability. |
Use Scenario: Driving bidirectional DC motors for electric seat adjustment and mirror folding functions. IC Role / Device Role / Timing Role: Half-bridge high-side switch enabling PWM-controlled direction and speed regulation. Use Value: Fast 24 ns rise time and 33 ns fall time support 20 kHz PWM without excessive switching loss; integrated diode handles back-EMF. |
| Engine Bay Sensor Power Supply | 24 V Commercial Vehicle Lighting |
Use Scenario: Providing switched 12 V power to crankshaft position sensors and camshaft sensors located near the engine block. IC Role / Device Role / Timing Role: Protected power rail switch with overvoltage and overtemperature fault tolerance. Use Value: 175 °C TJ rating allows direct mounting on hot engine control housings; -60 V VDS withstands load dump transients. |
Use Scenario: Controlling LED headlamps and fog lamps in heavy-duty trucks operating on 24 V systems. IC Role / Device Role / Timing Role: High-current load switch managing up to 5 A steady-state current with surge capability. Use Value: 21 A pulsed drain current rating accommodates cold-start inrush; TSOP-6 footprint simplifies thermal pad layout on multi-layer boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, -100 V rating, 0.3 Ω RDS(on) at -10 V - higher on-resistance and larger footprint. | Requires heatsink for >2 A loads; unsuitable for space-constrained automotive PCBs. | Select only if higher voltage margin or through-hole assembly is required; not drop-in compatible. |
| DMN601WK-7 | SOT-26 package, -60 V, 0.12 Ω RDS(on) at -10 V, 3.5 A ID - lower current rating and no AEC-Q101 qualification. | Limited to non-safety-critical consumer or industrial applications; lacks automotive reliability validation. | Use where cost is prioritized over automotive qualification and thermal performance; verify pulse current capability. |
Compared with IRF9530NPBF and DMN601WK-7, SQ3427EV-T1_BE3 delivers superior power density (0.095 Ω in TSOP-6), guaranteed AEC-Q101 compliance, and higher continuous current capability - making it the preferred choice for space- and reliability-constrained automotive power switches.
Availability
SQ3427EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, seat/mirror actuation systems, and engine bay sensor power management requiring stable component supply across extended product lifecycles.
Supply support for SQ3427EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ3427EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-reliability 12 V/24 V power switching in harsh-temperature vehicle subsystems.
FAQ
What is the gate threshold voltage range for SQ3427EV-T1_BE3?
The SQ3427EV-T1_BE3 has a gate-source threshold voltage (VGS(th)) ranging from -1.5 V to -2.5 V at ID = -250 μA. This ensures reliable turn-on with 3.3 V or 5 V logic-level drivers while maintaining noise immunity against spurious gate excitation in automotive environments. The SQ3427EV-T1_BE3 maintains stable threshold behavior across its full -55 °C to +175 °C operating range.
Is SQ3427EV-T1_BE3 qualified for automotive applications?
Yes, SQ3427EV-T1_BE3 is AEC-Q101 qualified and 100 % Rg and UIS tested per the Vishay datasheet S21-1246-Rev. B. It is designed for automotive power distribution, including body control modules and actuator drives, and supports operation up to +175 °C junction temperature - meeting critical reliability requirements for under-hood and cabin-mounted electronics.
What is the thermal resistance from junction to ambient for SQ3427EV-T1_BE3?
The SQ3427EV-T1_BE3 has a junction-to-ambient thermal resistance (RthJA) of 110 °C/W when mounted on a 1" square FR4 PCB. This value is measured under standardized conditions and guides thermal design for natural convection cooling. For enhanced thermal performance, the SQ3427EV-T1_BE3 also offers RthJF = 30 °C/W to the drain foot, enabling direct thermal coupling to copper pour or heatsink layers.
Can SQ3427EV-T1_BE3 be used in high-side switch configurations?
Yes, SQ3427EV-T1_BE3 is optimized for high-side switching due to its P-channel architecture, isolated source terminal (Pin 4), and -2.0 V typical VGS(th). When used with a simple gate driver referenced to the source, the SQ3427EV-T1_BE3 provides reverse polarity protection and controlled inrush limiting for 12 V/24 V loads - a key requirement in automotive power distribution networks.
What is the maximum pulsed drain current rating for SQ3427EV-T1_BE3?
The SQ3427EV-T1_BE3 supports a pulsed drain current (IDM) of -21 A under pulse test conditions (pulse width ≤ 300 μs, duty cycle ≤ 2 %). This rating enables robust handling of motor startup surges and solenoid inrush currents in automotive applications. The SQ3427EV-T1_BE3 also sustains -21 A single-pulse avalanche current (IAS) with 22 mJ energy absorption capability.
SQ3427EV-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3427EV-T1_BE3 FAQ
1.How can I place an order for SQ3427EV-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3427EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3427EV-T1_BE3 reliable?
The price and inventory of SQ3427EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3427EV-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ3427EV-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3427EV-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3427EV-T1_BE3?
SQ3427EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3427EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3427EV-T1_BE3?
For technical support, including SQ3427EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3427EV-T1_BE3 requirements.
6.How does Aetrix verify that SQ3427EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ3427EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3427EV-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ3427EV-T1_BE3?
All SQ3427EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3427EV-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3427EV-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ3427EV-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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