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Vishay Siliconix SQ3427EV-T1_GE3
- Part No.:
- SQ3427EV-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3427EV-T1_GE3.pdf
- Description:
- MOSFET P-CH 60V 5.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:16,223
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Product details
Overview
SQ3427EV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 0.095 Ω RDS(on) at -10 V gate drive, and -5.3 A continuous drain current at 25 °C - designed for high-side load switching in 12 V/24 V automotive power distribution systems.
For engineers reviewing the SQ3427EV-T1_GE3 datasheet, SQ3427EV-T1_GE3 pinout, SQ3427EV-T1_GE3 application, or SQ3427EV-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, TSOP-6 package thermal performance (RthJA = 110 °C/W), and robust UIS/100% Rg testing for under-hood reliability.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance with fast switching dynamics: total gate charge is 15.3 nC typical at -10 V, with turn-on delay of 8 ns and rise time of 24 ns under standard test conditions (VDD = -30 V, Rg = 1 Ω). Its negative threshold voltage (-2.0 V typ.) ensures reliable turn-on with standard logic-level gate drivers.
The integrated body diode supports reverse-current paths in H-bridge or bidirectional power control, with VSD = -0.8 V typical at -1.6 A and zero gate voltage - critical for freewheeling in motor control and regenerative braking circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - supports full automotive battery transients up to ISO 7637-2 Pulse 5a (±75 V). |
| RDS(on) @ VGS = -10 V | 0.095 Ω - enables <1 W conduction loss at 5 A, reducing heatsink requirements in space-constrained modules. |
| ID (continuous) | -5.3 A @ TC = 25 °C - suitable for driving solenoids, fuel pumps, and HVAC actuators without forced cooling. |
| Junction Temp Range | -55 to +175 °C - qualified for engine bay and transmission control unit mounting locations. |
| Qg | 15.3 nC typical - balances switching speed and gate driver power consumption in 10–100 kHz PWM applications. |
| EAS | 22 mJ - withstands inductive energy spikes from relay or motor coil de-energization without failure. |
| RthJF | 30 °C/W - enables direct thermal coupling to PCB copper pour for efficient heat extraction via drain terminals. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C) with exposed drain paddle for thermal and electrical performance; footprint compatible with IPC-7351B SOIC-6 density but with optimized thermal pad layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Four parallel drain connections tied to internal die source metallization and exposed thermal pad - primary current path and main thermal conduction path to PCB. |
| 3 | Gate (G) | Control terminal requiring ≤ ±20 V gate-source voltage; low input capacitance (Ciss = 700 pF typ.) reduces driver loading. |
| 4 | Source (S) | Reference node for gate drive and load return path; connects to system ground or high-side rail reference in floating configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD - no derating needed for under-hood deployment. |
| 100% Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parasitic oscillation or avalanche overstress. |
| TrenchFET® architecture | Enables lower RDS(on) × Qg figure-of-merit than planar MOSFETs - improves efficiency in duty-cycled power switches. |
| 175 °C maximum junction temperature | Permits operation in high-ambient environments (e.g., near exhaust manifolds or turbochargers) without thermal shutdown. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - meets global automotive OEM material declarations. |
Applications
| Engine Control Module Power Switching | Body Control Module Load Management |
|---|---|
Use Scenario: High-side switching of fuel injector drivers and ignition coil primaries in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlled by microcontroller GPIO with level-shifting circuitry. Use Value: Withstands repetitive 60 V load dump events and delivers stable RDS(on) across -40 to +150 °C ambient - ensures consistent pulse-width modulation timing and current delivery. | Use Scenario: Centralized power distribution for door locks, window lift motors, and interior lighting in BCMs. IC Role / Device Role / Timing Role: High-side load switch enabling individual circuit protection and diagnostics via current sensing at source terminal. Use Value: Low 0.135 Ω RDS(on) at -4.5 V gate drive allows direct interface with 5 V MCU outputs - eliminates need for external level shifters or gate drivers. |
| Transmission Control Unit Solenoid Drive | Electric Power Steering Motor Phase Control |
Use Scenario: Driving linear solenoids for hydraulic pressure regulation in automatic transmissions. IC Role / Device Role / Timing Role: Constant-current switch operating in linear mode during transient ramp-up, then saturated switching during hold phase. Use Value: 22 mJ single-pulse avalanche energy rating absorbs back-EMF from solenoid coil collapse - prevents destructive voltage spikes without external snubbers. | Use Scenario: Half-bridge high-side switch in EPS motor gate driver stages for 12 V or 48 V systems. IC Role / Device Role / Timing Role: Synchronized switching element in three-phase inverter leg, commutated at 10–20 kHz with precise dead-time control. Use Value: Fast 33 ns fall time and 25 ns turn-off delay support tight PWM timing margins - minimizes shoot-through risk and torque ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω @ -10 V), slower switching (Qg = 60 nC), no AEC-Q101 qualification. | Requires heatsink and external avalanche protection; limited to non-automotive industrial use. | Select only for cost-sensitive, non-automotive designs where board space and thermal constraints allow TO-220 mounting. |
| DMT6009LPS-13 | TSOP-6 package, lower RDS(on) (0.0085 Ω @ -10 V), higher ID (12 A), AEC-Q101 qualified, but larger die size increases gate charge (Qg = 32 nC). | Better conduction efficiency but demands stronger gate driver; may exceed layout area budget in compact modules. | Prefer when minimizing conduction loss dominates over switching loss and PCB real estate permits larger thermal pad. |
Compared with IRF9530NPBF and DMT6009LPS-13, the SQ3427EV-T1_GE3 offers optimal balance of automotive qualification, thermal performance in TSOP-6, and gate drive compatibility - making it ideal for space-constrained, high-reliability 12 V/24 V power switches where both efficiency and ruggedness are required.
Availability
SQ3427EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, transmission systems, and electric power steering requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for SQ3427EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ3427EV-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-side switching in harsh-environment vehicle subsystems where reliability, thermal resilience, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum gate-source voltage rating for SQ3427EV-T1_GE3?
The SQ3427EV-T1_GE3 has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits - including level shifters and transient suppressors - clamp VGS within this range during all operating and fault conditions. The SQ3427EV-T1_GE3 gate structure is optimized for robustness but not tolerant of sustained overvoltage.
Is SQ3427EV-T1_GE3 suitable for linear-mode operation in automotive current regulators?
Yes, the SQ3427EV-T1_GE3 supports linear-mode operation with validated safe operating area (SOA) curves up to 100 ms at 25 °C ambient. Its RDS(on) stability over temperature and 175 °C junction rating enable use in analog current regulation for solenoids and valves. However, designers must verify thermal dissipation using RthJA = 110 °C/W and RthJF = 30 °C/W values - the SQ3427EV-T1_GE3 requires adequate copper pour and airflow for sustained linear bias.
Does SQ3427EV-T1_GE3 have an integrated ESD protection diode on the gate?
No, the SQ3427EV-T1_GE3 does not include an integrated gate ESD protection diode. Its gate oxide is rated for ±20 V absolute maximum, and gate leakage (IGSS) is specified at ±100 nA - indicating no clamping structure. External gate protection (e.g., TVS diode between G and S) is recommended in systems exposed to handling or system-level ESD per ISO 10605. This design choice preserves low Ciss and fast switching in the SQ3427EV-T1_GE3.
What is the typical threshold voltage range for SQ3427EV-T1_GE3, and how does it vary with temperature?
The SQ3427EV-T1_GE3 has a gate-source threshold voltage (VGS(th)) range of -1.5 V to -2.5 V at 25 °C, with typical value -2.0 V. As temperature increases, VGS(th) becomes less negative - varying by approximately +0.002 V/°C - which means higher gate drive voltage is needed to maintain full enhancement at elevated junction temperatures. This behavior is documented in the SQ3427EV-T1_GE3 datasheet's "Threshold Voltage vs. Temperature" plot.
Can SQ3427EV-T1_GE3 be used in synchronous rectification applications?
No, the SQ3427EV-T1_GE3 is not optimized for synchronous rectification. Its body diode forward voltage (VSD = -0.8 V typ. at -1.6 A) and reverse recovery characteristics are not characterized for high-frequency rectification. The device lacks specified trr, Qrr, or soft-recovery behavior - critical parameters for SR MOSFETs. For such applications, dedicated synchronous rectifier MOSFETs like the SiR626DP should be selected instead of the SQ3427EV-T1_GE3.
SQ3427EV-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3427EV-T1_GE3 FAQ
1.How can I place an order for SQ3427EV-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3427EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3427EV-T1_GE3 reliable?
The price and inventory of SQ3427EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3427EV-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ3427EV-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3427EV-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3427EV-T1_GE3?
SQ3427EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3427EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3427EV-T1_GE3?
For technical support, including SQ3427EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3427EV-T1_GE3 requirements.
6.How does Aetrix verify that SQ3427EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ3427EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3427EV-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ3427EV-T1_GE3?
All SQ3427EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3427EV-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3427EV-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ3427EV-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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