Vishay Siliconix SQ3456BEV-T1_GE3
- Part No.:
- SQ3456BEV-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3456BEV-T1_GE3.pdf
- Description:
- MOSFET N-CH 30V 7.8A 6TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:6,687
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Product details
Overview
SQ3456BEV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 30 V VDS, 7.8 A continuous drain current at 25 °C, and RDS(on) of 0.035 Ω at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control and load switching in 12 V automotive systems.
For engineers reviewing the SQ3456BEV-T1_GE3 datasheet, SQ3456BEV-T1_GE3 pinout, SQ3456BEV-T1_GE3 application, or SQ3456BEV-T1_GE3 equivalent, this device is selected for high-reliability 30 V DC load switching where low on-resistance, robust avalanche capability (EAS = 5 mJ), and thermal stability across -55 °C to +175 °C are critical.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low gate charge (Qg = 6–10 nC) and fast switching (td(on) = 6–9 ns, tf = 8–12 ns), enabling efficient PWM control in automotive body electronics. Its TSOP-6 package provides enhanced thermal performance with RthJF = 38 °C/W to the drain foot.
The device integrates a robust intrinsic body diode (VSD = 0.8–1.1 V at IF = 3 A) and is 100 % tested for gate resistance (Rg = 3.0–11 Ω) and unclamped inductive switching (UIS), supporting reliable operation in inductive load circuits without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V automotive battery rail with surge margin |
| RDS(on) @ VGS = 10 V | 0.035 Ω - Enables ≤0.2 W conduction loss at 7.8 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 0.052 Ω - Ensures full enhancement with standard 5 V logic-level gate drive |
| ID (continuous, TC = 25 °C) | 7.8 A - Supports medium-power loads such as fuel pumps, radiator fans, and solenoids |
| EAS | 5 mJ - Withstands single-pulse inductive energy without failure in relay or motor drive turn-off |
| TJ max | +175 °C - Certified for under-hood environments including engine control modules and transmission ECUs |
| Qg | 6–10 nC - Low gate charge enables fast, low-loss switching with standard gate drivers |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, with exposed drain pad for thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-current output node; pins 1/2/5/6 and exposed pad form parallel drain connection for low RDS(on) and thermal path |
| 3 | Gate (G) | Control input; requires < ±20 V rating and low-impedance drive due to Qg = 6–10 nC |
| 4 | Source (S) | Power return reference; tied to system ground or low-side switch common point |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive use per stress test requirements including HTOL, TC, HTRB, and UHAST |
| 100 % Rg and UIS Tested | Each unit screened for gate resistance consistency and single-pulse avalanche ruggedness |
| TrenchFET® Architecture | Delivers 21 S transconductance (gfs) and low Ciss = 295–370 pF for stable high-frequency switching |
| RthJF = 38 °C/W | Direct thermal path from junction to drain foot enables >1.3 W power dissipation at 125 °C case temperature |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions |
Applications
| Engine Cooling Fan Control | Automotive HVAC Blower Motor |
|---|---|
Use Scenario: PWM-controlled 12 V DC brush motor driving engine cooling fan in thermal management system. IC Role / Device Role / Timing Role: Low-side switching MOSFET providing precise duty-cycle-regulated current to motor windings. Use Value: RDS(on) = 0.035 Ω minimizes I²R losses at 7.8 A peak, while EAS = 5 mJ absorbs flyback energy during PWM turn-off without external clamping. | Use Scenario: Speed-controlled blower motor in passenger cabin HVAC system with variable airflow demand. IC Role / Device Role / Timing Role: High-efficiency N-channel switch in low-side configuration, driven by MCU PWM output. Use Value: Logic-level compatibility (RDS(on) = 0.052 Ω @ 4.5 V) ensures full enhancement from 5 V microcontroller outputs, eliminating level-shifting circuitry. |
| Fuel Pump Driver | Transmission Solenoid Switch |
Use Scenario: Constant-current or PWM-driven 12 V fuel pump in gasoline direct injection (GDI) systems. IC Role / Device Role / Timing Role: Primary power switch regulating pump voltage and current under ECU command. Use Value: +175 °C rated junction temperature supports mounting near hot engine blocks; AEC-Q101 qualification ensures long-term reliability in safety-critical fuel delivery. | Use Scenario: On/off control of hydraulic pressure solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: Robust load switch handling repetitive inductive turn-off transients in gear-shifting cycles. Use Value: 100 % UIS testing guarantees survival over >10⁶ solenoid actuation cycles; low Qg reduces driver IC loading and switching losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 0.038 Ω @ 4.5 V; no AEC-Q101 qualification; RthJA = 120 °C/W | Not approved for automotive safety-critical systems; suitable only for industrial or consumer-grade 12 V switching | Select only if AEC-Q101 compliance is not required and thermal margin allows higher RthJA |
| DMN3028LFG-7 | RDS(on) = 0.028 Ω @ 4.5 V; AEC-Q101 qualified; TSOP-6 package; lower VGS(th) (1.0–2.0 V) | Better low-voltage drive margin and slightly lower conduction loss, but same thermal footprint and pinout | Preferred for new designs requiring tighter gate threshold control and marginally improved efficiency |
Compared with IRLML6344TRPBF, SQ3456BEV-T1_GE3 provides certified automotive reliability and superior thermal performance; versus DMN3028LFG-7, it trades minor RDS(on) increase for proven field history and identical layout compatibility in legacy AEC-Q101 designs.
Availability
SQ3456BEV-T1_GE3 is available at Aetrix Electronics and suitable for engine cooling fan control, automotive HVAC blower motors, and fuel pump drivers requiring stable component supply across extended temperature and automotive lifecycle requirements.
Supply support for SQ3456BEV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ3456BEV-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability 12 V load switching in harsh under-hood environments.
FAQ
What is the maximum continuous drain current for SQ3456BEV-T1_GE3 at 125 °C case temperature?
The SQ3456BEV-T1_GE3 supports 4.5 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package and ensures safe operation in high-ambient under-hood locations. The device maintains RDS(on) ≤ 0.064 Ω at 175 °C junction temperature, preserving switching efficiency even at elevated temperatures.
Is SQ3456BEV-T1_GE3 suitable for driving inductive loads like solenoids or relays?
Yes, SQ3456BEV-T1_GE3 is fully suitable for inductive load switching. It is 100 % tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy EAS = 5 mJ. Its robust body diode (VSD = 0.8–1.1 V) and low gate charge enable controlled turn-off without external snubbers in solenoid and relay driver circuits.
Does SQ3456BEV-T1_GE3 require a gate resistor for typical MCU-driven applications?
A gate resistor is recommended for SQ3456BEV-T1_GE3 in MCU-driven applications to damp ringing and control dV/dt. With Qg = 6–10 nC and typical gate drive impedance < 100 Ω, a 10–22 Ω series resistor optimizes switching speed while preventing oscillation. The device's Rg = 3.0–11 Ω internal gate resistance further stabilizes turn-on/turn-off behavior.
What is the thermal resistance from junction to ambient (RthJA) for SQ3456BEV-T1_GE3 in standard PCB mounting?
The SQ3456BEV-T1_GE3 has RthJA = 110 °C/W when mounted on a 1" square FR-4 PCB with 2 oz copper on both sides. This value assumes standard JEDEC test conditions and guides thermal design for natural-convection cooling. For higher power density, the lower RthJF = 38 °C/W to the drain foot enables direct thermal coupling to copper pours or heat spreaders.
How does the AEC-Q101 qualification of SQ3456BEV-T1_GE3 impact its use in automotive designs?
The AEC-Q101 qualification of SQ3456BEV-T1_GE3 confirms it meets rigorous stress tests for automotive electronics, including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. This certification allows direct use in safety-compliant modules like body control units and engine management systems without additional component-level qualification effort.
SQ3456BEV-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3456BEV-T1_GE3 FAQ
1.How can I place an order for SQ3456BEV-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3456BEV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3456BEV-T1_GE3 reliable?
The price and inventory of SQ3456BEV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3456BEV-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ3456BEV-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3456BEV-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3456BEV-T1_GE3?
SQ3456BEV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3456BEV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3456BEV-T1_GE3?
For technical support, including SQ3456BEV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3456BEV-T1_GE3 requirements.
6.How does Aetrix verify that SQ3456BEV-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ3456BEV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3456BEV-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ3456BEV-T1_GE3?
All SQ3456BEV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3456BEV-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3456BEV-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ3456BEV-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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