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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3456CEV-T1_GE3

Name: SQ3456CEV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3456CEV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3456CEV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3456CEV-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 30 V (D-S)

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Inventory:2,250

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Product details

Overview

SQ3456CEV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 30 V V_DS, 7.8 A continuous drain current at 25 °C, and R_DS(on) of 0.035 Ω at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood automotive power switching in DC-DC converters and motor drivers.

For engineers reviewing the SQ3456CEV-T1_GE3 datasheet, SQ3456CEV-T1_GE3 pinout, SQ3456CEV-T1_GE3 application, or SQ3456CEV-T1_GE3 equivalent, key selection criteria include its TSOP-6 package thermal performance (R_thJA = 110 °C/W), 100 % R_g and UIS tested reliability, and low gate charge (Q_g = 6–10 nC) for efficient high-frequency switching.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables robust drive compatibility with standard logic-level controllers, while the body diode exhibits t_rr = 10–20 ns and Q_rr = 5–10 nC for reduced switching losses in synchronous rectification.

The device features a single N-channel configuration in a thermally enhanced TSOP-6 package with four drain terminals (pins 1, 2, 5, 6), one source (pin 4), and one gate (pin 3). Its R_thJF = 38 °C/W supports direct heat transfer to PCB copper, and it is rated for 100 % avalanche energy testing (E_AS = 5 mJ) per pulse.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V battery rail applications with transient margin.
R_DS(on) @ V_GS = 10 V	0.035 Ω - Enables ≤ 1.6 W conduction loss at 7.8 A, suitable for compact high-efficiency power stages.
R_DS(on) @ V_GS = 4.5 V	0.052 Ω - Ensures reliable turn-on with 3.3 V or 5 V gate drivers in low-voltage control domains.
Q_g	6–10 nC - Reduces gate drive power and switching transition time in PWM frequencies up to 1 MHz.
t_r/t_f	12–18 ns / 8–12 ns - Supports fast edge rates with minimal overlap loss in hard-switched topologies.
T_J max	+175 °C - Qualified for under-hood environments including engine control units and HVAC actuators.
I_D pulsed	31 A - Handles short-term surge currents during motor startup or load dump events.

Pinout & Package

Package: TSOP-6 (JEDEC MO-193C), surface-mount, lead (Pb)-free and halogen-free, footprint compatible with standard 6-lead TSOP land pattern (0.95 mm pitch, 3.05 mm × 2.85 mm body).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Four parallel drain terminals reduce package inductance and improve current sharing; connected internally to die drain metallization.
3	Gate (G)	Control terminal with R_g = 3.0–11 Ω; requires <10 nC total charge for full enhancement.
4	Source (S)	Power return path; referenced to gate drive ground; used for current sensing in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, HTRB, and UHAST-enables deployment without additional qualification effort.
100 % R_g and UIS tested	Each unit undergoes production screening for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor drive fault conditions.
TrenchFET® architecture	Delivers lower R_DS(on) × area than planar MOSFETs-enables smaller PCB real estate and higher power density in space-constrained modules.
Body diode t_rr = 10–20 ns	Minimizes reverse recovery loss and EMI generation during freewheeling in buck or half-bridge converters.
R_thJF = 38 °C/W	Enables direct thermal coupling to PCB copper pour-supports >1.3 W continuous dissipation at 125 °C case temperature without heatsink.

Applications

Automotive Body Control Module (BCM)	12 V DC-DC Converter Secondary Side
Use Scenario: Switching power distribution for door locks, lighting, and window lift motors in BCM subassemblies. IC Role / Device Role / Timing Role: Low-side power switch controlling 5–10 A resistive/inductive loads with PWM or on/off duty cycles. Use Value: AEC-Q101 qualification and 175 °C operation ensure reliability across vehicle lifetime; low R_DS(on) reduces thermal derating and simplifies thermal design.	Use Scenario: Synchronous rectification in 12 V output stage of isolated flyback or forward converter powering infotainment systems. IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) synchronous rectifier replacing Schottky diode to improve efficiency by 2–4 %. Use Value: Fast t_r/t_f and low Q_g minimize switching loss; body diode Q_rr = 5–10 nC prevents shoot-through during dead-time transitions.
Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-side or low-side driver for solenoid-type fuel injectors requiring precise 1–5 ms pulse-width control. IC Role / Device Role / Timing Role: Current-switching element with fast turn-off (t_f = 8–12 ns) to limit injector coil demagnetization delay. Use Value: Guaranteed UIS rating (IAS = 10 A, EAS = 5 mJ) withstands inductive kickback without external snubbers.	Use Scenario: PWM-controlled power stage for brushless DC blower motors in climate control systems. IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 20–30 kHz with peak currents up to 15 A (pulsed). Use Value: R_DS(on) stability over temperature (0.064 Ω max at 175 °C) ensures consistent torque control across ambient range (-40 to +105 °C).

Automotive Body Control Module (BCM)

12 V DC-DC Converter Secondary Side

Use Scenario: Switching power distribution for door locks, lighting, and window lift motors in BCM subassemblies.

IC Role / Device Role / Timing Role: Low-side power switch controlling 5–10 A resistive/inductive loads with PWM or on/off duty cycles.

Use Value: AEC-Q101 qualification and 175 °C operation ensure reliability across vehicle lifetime; low R_DS(on) reduces thermal derating and simplifies thermal design.

Use Scenario: Synchronous rectification in 12 V output stage of isolated flyback or forward converter powering infotainment systems.

IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) synchronous rectifier replacing Schottky diode to improve efficiency by 2–4 %.

Use Value: Fast t_r/t_f and low Q_g minimize switching loss; body diode Q_rr = 5–10 nC prevents shoot-through during dead-time transitions.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-side or low-side driver for solenoid-type fuel injectors requiring precise 1–5 ms pulse-width control.

IC Role / Device Role / Timing Role: Current-switching element with fast turn-off (t_f = 8–12 ns) to limit injector coil demagnetization delay.

Use Value: Guaranteed UIS rating (IAS = 10 A, EAS = 5 mJ) withstands inductive kickback without external snubbers.

Use Scenario: PWM-controlled power stage for brushless DC blower motors in climate control systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch operating at 20–30 kHz with peak currents up to 15 A (pulsed).

Use Value: R_DS(on) stability over temperature (0.064 Ω max at 175 °C) ensures consistent torque control across ambient range (-40 to +105 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 0.0014 Ω R_DS(on) @ 10 V, PG-TSDSON-8 package (3.3 × 3.3 mm)	Higher voltage rating and lower R_DS(on), but larger footprint and no AEC-Q101 documentation publicly available for this variant	Select when 40 V system margin or <1 mΩ conduction loss is required; verify automotive qualification status separately.
ON Semiconductor NTMFS4C09NT1G	30 V V_DS, 0.0042 Ω R_DS(on) @ 10 V, SO-8FL package; AEC-Q101 qualified	Lower R_DS(on) but higher Q_g (14 nC) and larger thermal resistance (R_thJA = 130 °C/W)	Prefer for ultra-low-loss static applications where gate drive capability permits higher Q_g; avoid in high-frequency, thermally constrained layouts.

Compared with BSC014N04LS6 and NTMFS4C09NT1G, the SQ3456CEV-T1_GE3 offers optimal balance of automotive qualification, TSOP-6 compactness, and mid-range R_DS(on)/Q_g for cost-sensitive 12 V power switches where board space and thermal management are constrained.

Availability

SQ3456CEV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V DC-DC conversion, and motor control applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for SQ3456CEV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability, high-performance power components for automotive, industrial, and computing markets.

The SQ3456CEV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for demanding under-hood power switching where high temperature operation, ruggedness, and qualification assurance are mandatory.

FAQ

What is the maximum continuous drain current rating for SQ3456CEV-T1_GE3 at 125 °C case temperature?

The SQ3456CEV-T1_GE3 has a continuous drain current (I_D) rating of 4.5 A at T_C = 125 °C. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and is specified in the Absolute Maximum Ratings table of the official Vishay datasheet (Document Number: 62060, Rev. B).

Is SQ3456CEV-T1_GE3 suitable for high-frequency PWM motor control above 200 kHz?

Yes, SQ3456CEV-T1_GE3 supports high-frequency PWM motor control up to 500 kHz due to its low total gate charge (6–10 nC), fast switching times (t_r = 12–18 ns, t_f = 8–12 ns), and low output capacitance (C_oss = 73–85 pF). These parameters minimize switching loss and enable clean edges in BLDC gate drive applications.

Does SQ3456CEV-T1_GE3 include integrated ESD protection on the gate terminal?

No, SQ3456CEV-T1_GE3 does not include integrated gate ESD protection. The gate-source leakage (I_GSS) is specified at ±100 nA at ±20 V, and the absolute maximum V_GS is ±20 V-designers must implement external gate protection (e.g., Zener clamp or RC snubber) per application requirements and layout parasitics.

What is the thermal resistance from junction to ambient (R_thJA) for SQ3456CEV-T1_GE3 under standard PCB mounting conditions?

The junction-to-ambient thermal resistance (R_thJA) for SQ3456CEV-T1_GE3 is 110 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value assumes standard JEDEC test conditions and is critical for calculating steady-state junction temperature in thermally constrained automotive modules.

Can SQ3456CEV-T1_GE3 be used in a high-side switch configuration with 12 V supply?

Yes, SQ3456CEV-T1_GE3 can be used in high-side configurations with a 12 V supply, provided the gate is driven to ≥12 V relative to the source (e.g., using a bootstrap or charge-pump gate driver). Its V_GS(th) range (1.5–2.5 V) and 20 V maximum V_GS rating support robust enhancement, and its 30 V V_DS provides sufficient margin for load dump transients.

SQ3456CEV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3456CEV-T1_GE3 FAQ

1.How can I place an order for SQ3456CEV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3456CEV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3456CEV-T1_GE3 reliable?

The price and inventory of SQ3456CEV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3456CEV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3456CEV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3456CEV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3456CEV-T1_GE3?

SQ3456CEV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3456CEV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3456CEV-T1_GE3?

For technical support, including SQ3456CEV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3456CEV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3456CEV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3456CEV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3456CEV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3456CEV-T1_GE3?

All SQ3456CEV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3456CEV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3456CEV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3456CEV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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