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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3457EV-T1_BE3

Name: SQ3457EV-T1_BE3
Brand: Vishay Siliconix
SKU: SQ3457EV-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3457EV-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3457EV-T1_BE3.pdf

Description:: MOSFET P-CHANNEL 30V 6.8A 6TSOP

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Product details

Overview

SQ3457EV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -30 V drain-source voltage, 6.8 A continuous drain current at 25 °C, and R_DS(on) of 0.065 Ω at V_GS = -10 V. It features TSOP-6 packaging, AEC-Q101 qualification, and operates up to +175 °C junction temperature - deployed in automotive body control modules for high-side load switching.

For engineers reviewing the SQ3457EV-T1_BE3 datasheet, SQ3457EV-T1_BE3 pinout, SQ3457EV-T1_BE3 application, or SQ3457EV-T1_BE3 equivalent, key selection criteria include its -30 V V_DS, low 0.065 Ω R_DS(on) at -10 V, AEC-Q101 compliance, thermal robustness to +175 °C, and TSOP-6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching performance in a P-channel configuration. Its gate threshold voltage range (-1.5 V to -2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level gate drive in high-side switch topologies.

The MOSFET integrates a built-in body diode with V_SD = -0.8 V to -1.1 V at -1.6 A, supporting bidirectional current handling in regenerative braking circuits and reverse-polarity protection. Thermal design is supported by R_thJF = 30 °C/W (junction-to-foot) and R_thJA = 110 °C/W (PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Withstands reverse battery transients up to ISO 7637-2 Pulse 1 (-60 V clamped) when used with external TVS.
R_DS(on) @ V_GS = -10 V	0.065 Ω - Enables ≤ 300 mW conduction loss at 6.8 A, critical for thermally constrained automotive modules.
I_D Continuous @ T_C = 25 °C	-6.8 A - Supports high-current loads such as HVAC actuators or LED headlamp drivers without forced cooling.
Junction Temp Range	-55 °C to +175 °C - Qualified for under-hood applications including engine control units and transmission control modules.
Q_g Total Gate Charge	14–21 nC - Determines gate driver power requirement; compatible with low-power microcontroller GPIOs via appropriate buffer stage.
AEC-Q101 Qualified	Yes - Validated per stress test requirements for automotive electronics, including HTRB, HAST, and UIS.
T_ch Thermal Resistance (J-F)	30 °C/W - Enables direct thermal coupling to copper pour or heatsink pad for improved power dissipation.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.05 mm profile, with exposed drain paddle for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Internally connected to exposed paddle; primary current path and thermal conduction path to PCB copper.
3	Gate (G)	Control terminal; requires ESD-safe routing and gate resistor (10–100 Ω) to damp ringing during switching.
4	Source (S)	Reference node for gate drive; connects to load return or battery positive in high-side configuration.

Key Features

Feature	Design Value
TrenchFET® Process	Delivers 35% lower R_DS(on) vs. planar P-channel MOSFETs at same die size, reducing board area and thermal mass.
100% R_g and UIS Tested	Ensures gate robustness against transient overvoltage and avalanche energy tolerance (E_AS = 10 mJ) in inductive load switching.
Lead (Pb)-Free & Halogen-Free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly.
Low Q_gd/Q_g Ratio	~25% (3–5 nC / 14–21 nC) - Improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments.

Applications

Body Control Module (BCM)	Automotive Lighting Control
Use Scenario: High-side switching of door lock actuators, mirror heaters, and interior lighting in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with gate driven by microcontroller GPIO through level-shifting circuitry. Use Value: R_DS(on) ≤ 0.065 Ω limits self-heating to <1 W at 4 A, enabling compact layout without heatsink in sealed BCM enclosures.	Use Scenario: PWM dimming and on/off control of LED headlamps and DRLs with reverse-polarity protection. IC Role / Device Role / Timing Role: High-side switch providing load isolation and polarity protection; body diode handles freewheeling current during PWM off-time. Use Value: V_SD ≤ -1.1 V ensures <1.8 W conduction loss at 1.6 A, minimizing thermal impact on optical housing and lens materials.
Engine Management System	Transmission Control Unit
Use Scenario: Power distribution to solenoid valves, fuel injectors, and sensor bias supplies in under-hood ECUs. IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche capability for inductive kickback suppression. Use Value: E_AS = 10 mJ withstands repetitive 14 V/100 ms inductive spikes without degradation, extending field lifetime beyond 15 years.	Use Scenario: Controlled power gating of hydraulic pressure control solenoids and shift actuator drivers. IC Role / Device Role / Timing Role: AEC-Q101 qualified load switch ensuring fail-safe shutdown during CAN bus fault conditions. Use Value: T_J rating up to +175 °C supports operation adjacent to transmission oil coolers where ambient exceeds +125 °C.

Body Control Module (BCM)

Automotive Lighting Control

Use Scenario: High-side switching of door lock actuators, mirror heaters, and interior lighting in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with gate driven by microcontroller GPIO through level-shifting circuitry.

Use Value: R_DS(on) ≤ 0.065 Ω limits self-heating to <1 W at 4 A, enabling compact layout without heatsink in sealed BCM enclosures.

Use Scenario: PWM dimming and on/off control of LED headlamps and DRLs with reverse-polarity protection.

IC Role / Device Role / Timing Role: High-side switch providing load isolation and polarity protection; body diode handles freewheeling current during PWM off-time.

Use Value: V_SD ≤ -1.1 V ensures <1.8 W conduction loss at 1.6 A, minimizing thermal impact on optical housing and lens materials.

Engine Management System

Transmission Control Unit

Use Scenario: Power distribution to solenoid valves, fuel injectors, and sensor bias supplies in under-hood ECUs.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche capability for inductive kickback suppression.

Use Value: E_AS = 10 mJ withstands repetitive 14 V/100 ms inductive spikes without degradation, extending field lifetime beyond 15 years.

Use Scenario: Controlled power gating of hydraulic pressure control solenoids and shift actuator drivers.

IC Role / Device Role / Timing Role: AEC-Q101 qualified load switch ensuring fail-safe shutdown during CAN bus fault conditions.

Use Value: T_J rating up to +175 °C supports operation adjacent to transmission oil coolers where ambient exceeds +125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	TO-220 package, higher R_DS(on) (0.3 Ω @ -10 V), lower I_D (-12 A), no AEC-Q101 qualification.	Requires heatsink; unsuitable for under-hood automotive use due to lack of automotive qualification and thermal derating.	Select only for non-automotive industrial prototypes where cost outweighs reliability and footprint constraints.
DMT3006LPS-13	TSOP-6, -30 V, R_DS(on) = 0.055 Ω @ -10 V, AEC-Q101 qualified, but lower I_D (-5.5 A) and higher Q_g (25 nC).	Better R_DS(on) but reduced current capacity and slower switching; may require stronger gate driver in high-frequency PWM.	Prefer for ultra-low-loss designs below 5 A; verify gate drive strength and thermal margin before substitution.

Compared with IRF9530NPBF and DMT3006LPS-13, SQ3457EV-T1_BE3 balances low R_DS(on), automotive qualification, and gate drive compatibility - making it optimal for space- and reliability-critical high-side switches in modern BCM and lighting ECUs.

Availability

SQ3457EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting systems, and engine management subsystems requiring stable component supply across extended product lifecycles.

Supply support for SQ3457EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ3457EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-reliability, high-temperature switching in 12 V and 24 V vehicle networks.

FAQ

What is the maximum allowable gate-source voltage for SQ3457EV-T1_BE3?

The absolute maximum gate-source voltage for SQ3457EV-T1_BE3 is ±20 V. Exceeding this rating risks permanent gate oxide damage. In practice, gate drive should be limited to -10 V for full enhancement and +10 V for safe turn-off, with series gate resistors to suppress ringing during fast transitions. The device's V_GS(th) range of -1.5 V to -2.5 V ensures predictable turn-on behavior with standard 3.3 V or 5 V logic-level drivers when properly biased.

Is SQ3457EV-T1_BE3 suitable for reverse-polarity protection in automotive systems?

Yes, SQ3457EV-T1_BE3 is widely used for reverse-polarity protection due to its P-channel topology and low R_DS(on). When placed between battery and load with source tied to battery+, the device blocks reverse current while allowing forward conduction with minimal voltage drop. Its -30 V V_DS rating accommodates ISO 7637-2 load dump transients, and the integrated body diode provides inherent freewheeling path. For full protection, pair with input TVS and fuse per ISO 16750-2.

Does SQ3457EV-T1_BE3 require a heatsink in typical automotive applications?

In most applications drawing ≤4 A continuous, SQ3457EV-T1_BE3 does not require an external heatsink when mounted on ≥1 oz. copper with ≥1"² thermal pad per Vishay's reference layout. Its R_thJA = 110 °C/W (PCB mount) and R_thJF = 30 °C/W enable sufficient heat transfer via the exposed drain paddle. At 6.8 A, junction temperature rise reaches ~75 °C above ambient - acceptable within the -55 °C to +175 °C rating if ambient stays below +100 °C. Thermal simulation is recommended for sealed enclosures.

How is the avalanche capability of SQ3457EV-T1_BE3 validated?

SQ3457EV-T1_BE3 is 100% tested for Unclamped Inductive Switching (UIS) per AEC-Q101 requirements, with single-pulse avalanche energy E_AS = 10 mJ at T_J = 25 °C. This rating is measured using L = 0.1 mH, I_AS = -14 A, and V_DD = -30 V. The device sustains repetitive avalanche events in real-world inductive load switching (e.g., solenoids, relays) without parameter shift - confirmed by accelerated life testing across temperature and humidity stress profiles.

Can SQ3457EV-T1_BE3 be used in 24 V commercial vehicle applications?

Yes, SQ3457EV-T1_BE3 is rated for -30 V V_DS, making it compatible with nominal 24 V systems where maximum transient voltage remains within specification (e.g., ISO 16750-2 Pulse 4a: +35 V). Its R_DS(on) increases only ~1.8× from 25 °C to 125 °C, preserving conduction efficiency across operating range. Derate I_D to -3.9 A at T_C = 125 °C per datasheet; ensure PCB layout maintains thermal path integrity to meet +175 °C T_J limit under worst-case ambient and power dissipation.

SQ3457EV-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 705 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3457EV-T1_BE3 FAQ

1.How can I place an order for SQ3457EV-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3457EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3457EV-T1_BE3 reliable?

The price and inventory of SQ3457EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3457EV-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ3457EV-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3457EV-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3457EV-T1_BE3?

SQ3457EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3457EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3457EV-T1_BE3?

For technical support, including SQ3457EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3457EV-T1_BE3 requirements.

6.How does Aetrix verify that SQ3457EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ3457EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3457EV-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ3457EV-T1_BE3?

All SQ3457EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3457EV-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3457EV-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ3457EV-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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