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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3460EV-T1_GE3

Name: SQ3460EV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3460EV-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ3460EV-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3460EV-T1_GE3.pdf

Description:: MOSFET N-CH 20V 8A 6TSOP

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Inventory:1,053

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Product details

Overview

SQ3460EV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, 8 A continuous drain current at 25 °C, and 0.030 Ω R_DS(on) at V_GS = 4.5 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and load switching in 12 V automotive systems.

For engineers reviewing the SQ3460EV-T1_GE3 datasheet, SQ3460EV-T1_GE3 pinout, SQ3460EV-T1_GE3 application, or SQ3460EV-T1_GE3 equivalent, this page delivers verified thermal resistance (R_thJA = 110 °C/W), gate charge (Q_g = 9.3 nC typ), avalanche energy rating (E_AS = 5 mJ), and TSOP-6 package layout details critical for high-reliability automotive PCB design.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(on) at logic-level gate drive (1.8–4.5 V), enabling direct interface with microcontroller GPIOs without level-shifting. Its 100 % R_g and UIS testing ensures robustness against gate oscillation and unclamped inductive switching stress in automotive solenoid and lamp drivers.

The device features a source-drain diode with V_SD = 0.77 V typ at 5 A and I_SM = 32 A pulsed, supporting freewheeling in H-bridge and buck converter topologies. Thermal design is anchored to its R_thJF = 41 °C/W (junction-to-foot) and R_thJA = 110 °C/W (PCB mount), validated on 1" × 1" FR-4 with 2 oz copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 4.5 V	0.030 Ω - Enables <150 mW conduction loss at 8 A, reducing thermal load in space-constrained modules.
I_D Continuous @ T_C = 25 °C	8 A - Sustained current capability suitable for fuel injector or fan motor drivers without forced cooling.
E_AS	5 mJ - Confirmed single-pulse avalanche energy tolerance for reliable operation during inductive turn-off events.
T_J Operating Range	−55 to +175 °C - Validated for under-hood environments including engine control units and transmission control modules.
Q_g	9.3 nC typ - Low gate charge supports fast switching (>1 MHz) with minimal driver power consumption.
R_thJA	110 °C/W - Thermal resistance measured on standard 1" × 1" FR-4 PCB, used to calculate junction temperature rise in layout planning.

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm height, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
(1, 2, 5, 6) D	Drain	High-current output node; electrically and thermally connected to exposed pad for heat dissipation.
(3) G	Gate	Control input; requires ≤ ±8 V drive; 6.2–18.6 Ω gate resistance affects switching speed and ringing.
(4) S	Source	Power return path and reference for gate drive; tied to system ground in low-side switch configuration.

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD, ensuring long-term reliability in safety-critical systems.
100 % R_g and UIS Tested	Every unit screened for gate resistance consistency and unclamped inductive switching survival-critical for solenoid and relay drivers.
TrenchFET® Architecture	Enables low R_DS(on) at 1.8 V gate drive, allowing direct MCU control without external level shifters in 3.3 V systems.
Halogen-Free & RoHS Compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC, supporting environmental compliance in global vehicle supply chains.

Applications

Fuel Injector Driver	Automotive HVAC Blower Control
Use Scenario: Precise PWM-controlled current delivery to 12 V gasoline/diesel fuel injectors in engine management systems. IC Role / Device Role / Timing Role: Low-side switch managing inductive load commutation with fast turn-on/turn-off (t_d(on) = 8 ns typ, t_f = 8 ns typ). Use Value: 0.030 Ω R_DS(on) minimizes power loss during extended duty cycles, while 175 °C rating ensures stable operation near hot engine blocks.	Use Scenario: Variable-speed control of brushed DC blowers in climate control modules. IC Role / Device Role / Timing Role: High-efficiency power switch in half-bridge or single-ended topology, handling 5–8 A peak loads. Use Value: 5 mJ E_AS withstands back-EMF spikes during abrupt shutdown; R_thJF = 41 °C/W enables compact heatsinking via PCB copper.
Transmission Solenoid Actuator	LED Headlamp Dimming Circuit
Use Scenario: Driving 12 V hydraulic pressure control solenoids in automatic transmission valve bodies. IC Role / Device Role / Timing Role: Robust low-side switch subjected to repetitive inductive switching and high ambient temperatures. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee operational integrity over 15-year vehicle lifetimes under thermal cycling.	Use Scenario: Current-regulated dimming of high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled current sink with fast switching and low conduction loss. Use Value: 9.3 nC Q_g enables clean 1–2 kHz dimming waveforms; 0.77 V V_SD reduces reverse recovery losses in synchronous rectification mode.

Fuel Injector Driver

Automotive HVAC Blower Control

Use Scenario: Precise PWM-controlled current delivery to 12 V gasoline/diesel fuel injectors in engine management systems.

IC Role / Device Role / Timing Role: Low-side switch managing inductive load commutation with fast turn-on/turn-off (t_d(on) = 8 ns typ, t_f = 8 ns typ).

Use Value: 0.030 Ω R_DS(on) minimizes power loss during extended duty cycles, while 175 °C rating ensures stable operation near hot engine blocks.

Use Scenario: Variable-speed control of brushed DC blowers in climate control modules.

IC Role / Device Role / Timing Role: High-efficiency power switch in half-bridge or single-ended topology, handling 5–8 A peak loads.

Use Value: 5 mJ E_AS withstands back-EMF spikes during abrupt shutdown; R_thJF = 41 °C/W enables compact heatsinking via PCB copper.

Transmission Solenoid Actuator

LED Headlamp Dimming Circuit

Use Scenario: Driving 12 V hydraulic pressure control solenoids in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: Robust low-side switch subjected to repetitive inductive switching and high ambient temperatures.

Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee operational integrity over 15-year vehicle lifetimes under thermal cycling.

Use Scenario: Current-regulated dimming of high-brightness LED arrays in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: PWM-controlled current sink with fast switching and low conduction loss.

Use Value: 9.3 nC Q_g enables clean 1–2 kHz dimming waveforms; 0.77 V V_SD reduces reverse recovery losses in synchronous rectification mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(on) = 0.022 Ω @ 4.5 V, but only rated to 150 °C TJ and not AEC-Q101 qualified.	Lacks automotive qualification; suitable for industrial or consumer DC-DC where temperature stress is lower.	Select DMN2020LFG-7 only if AEC-Q101 is not required and lower R_DS(on) justifies reduced thermal margin.
IPD20N03L3-20	Higher V_DS = 30 V, R_DS(on) = 0.020 Ω @ 4.5 V, AEC-Q101 qualified, but larger TO-252 package.	Requires PCB rework due to different footprint and thermal interface; better for higher-power loads.	Choose IPD20N03L3-20 when 30 V headroom or >10 A current is needed, accepting larger board area and assembly cost.

Compared with DMN2020LFG-7 and IPD20N03L3-20, the SQ3460EV-T1_GE3 uniquely balances AEC-Q101 compliance, TSOP-6 compactness, and 175 °C operation-making it optimal for space- and temperature-constrained automotive actuators where qualification and footprint are non-negotiable.

Availability

SQ3460EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC actuation, and lighting systems requiring stable component supply across multi-year production programs.

Supply support for SQ3460EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ3460EV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for under-hood switching applications demanding AEC-Q101 qualification, high-temperature operation, and low gate-drive voltage compatibility.

FAQ

What is the maximum gate-source voltage rating for SQ3460EV-T1_GE3?

The SQ3460EV-T1_GE3 has a maximum gate-source voltage (V_GS) rating of ±8 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to stay within this range-especially during transient conditions like ESD or inductive kickback.

Is SQ3460EV-T1_GE3 suitable for high-frequency PWM switching above 500 kHz?

Yes, the SQ3460EV-T1_GE3 supports high-frequency PWM switching with typical values of t_d(on) = 8 ns, t_r = 8 ns, t_d(off) = 21 ns, and t_f = 8 ns. Its low Q_g (9.3 nC typ) and Q_gd (1.4 nC typ) minimize switching losses, making it viable for 500 kHz–1 MHz operation in compact DC-DC converters and LED drivers-provided gate drive strength and PCB layout minimize parasitic inductance.

Does SQ3460EV-T1_GE3 include an integrated body diode, and what is its forward voltage?

Yes, the SQ3460EV-T1_GE3 includes an inherent N-channel MOSFET body diode. Its forward voltage (V_SD) is 0.77 V typical at I_F = 5 A and T_J = 25 °C, rising to 1.2 V maximum. This diode supports freewheeling in inductive loads and synchronous rectification, though its recovery characteristics are not optimized for high-speed ZVS applications.

What is the thermal resistance from junction to ambient (R_thJA) for SQ3460EV-T1_GE3, and how is it measured?

The SQ3460EV-T1_GE3 has a junction-to-ambient thermal resistance (R_thJA) of 110 °C/W, measured on a standard 1" × 1" FR-4 PCB with 2 oz copper on both sides. This value assumes no additional heatsinking and serves as a baseline for estimating junction temperature rise under real-world conditions-designers must verify actual thermal performance using their specific board layout and airflow.

How does the R_DS(on) of SQ3460EV-T1_GE3 change with temperature and gate voltage?

The R_DS(on) of SQ3460EV-T1_GE3 increases with junction temperature and decreases with higher gate voltage: at V_GS = 4.5 V, R_DS(on) rises from 0.030 Ω at 25 °C to 0.053 Ω at 175 °C; at V_GS = 1.8 V, it is 0.038 Ω at 25 °C but degrades more steeply with temperature. These dependencies are documented in the datasheet's "On-Resistance vs. Junction Temperature" and "On-Resistance vs. Gate-to-Source Voltage" curves.

SQ3460EV-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3460EV-T1_GE3 FAQ

1.How can I place an order for SQ3460EV-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3460EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3460EV-T1_GE3 reliable?

The price and inventory of SQ3460EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3460EV-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ3460EV-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3460EV-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3460EV-T1_GE3?

SQ3460EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3460EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3460EV-T1_GE3?

For technical support, including SQ3460EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3460EV-T1_GE3 requirements.

6.How does Aetrix verify that SQ3460EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ3460EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3460EV-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ3460EV-T1_GE3?

All SQ3460EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3460EV-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3460EV-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ3460EV-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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