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Vishay Siliconix SQ3461EV-T1_BE3
- Part No.:
- SQ3461EV-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3461EV-T1_BE3.pdf
- Description:
- P-CHANNEL 12-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,880
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Product details
Overview
SQ3461EV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -12 V drain-source voltage, 0.025 Ω RDS(on) at VGS = -4.5 V, -8 A continuous drain current, and 175 °C maximum junction temperature - designed for high-reliability load switching in automotive body control modules.
For engineers reviewing the SQ3461EV-T1_BE3 datasheet, SQ3461EV-T1_BE3 pinout, SQ3461EV-T1_BE3 application, or SQ3461EV-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world automotive use context - all aligned to Vishay's S22-0060-Rev. B specification.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance with fast switching characteristics: total gate charge is 21–28 nC at VGS = -4.5 V, with turn-on delay of 12–17 ns and fall time of 71–93 ns under standard test conditions (VDD = -6 V, Rg = 1 Ω). It supports robust unclamped inductive switching with 14 mJ single-pulse avalanche energy.
The MOSFET features a fully characterized source-drain diode (VSD = -0.8 to -1.2 V at IF = -2 A), gate threshold voltage of -0.4 to -1.0 V, and guaranteed 100 % Rg and UIS testing - confirming suitability for automotive power management where transient immunity and parametric consistency are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for 12 V automotive rail applications without derating. |
| RDS(on) @ VGS = -4.5 V | 0.025 Ω - Enables <190 mW conduction loss at 8 A, reducing thermal stress in compact PCB layouts. |
| ID (continuous) | -8 A @ TC = 25 °C - Supports high-side load switching in BCMs, seat controls, and lighting drivers. |
| Junction Temp Range | -55 to +175 °C - Validated for under-hood operation per AEC-Q101, enabling placement near heat sources. |
| Qg | 21–28 nC - Low gate charge allows efficient driving from low-power microcontrollers or dedicated gate drivers. |
| RthJA | 110 °C/W - Thermal resistance measured on 1" FR4 PCB; informs heatsinking requirements for sustained 6.6 A operation. |
| EAS | 14 mJ - Confirmed avalanche energy rating ensures reliability during inductive load turn-off transients. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 0.5 mm max height - optimized for automated assembly and thermal performance on double-sided 2 oz copper PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 6 | Drain (D) | Internally paralleled drain terminals - reduce package inductance and improve current sharing in high-frequency switching. |
| 3 | Gate (G) | Control input requiring -4.5 V for full enhancement; gate resistance 2.8–8.6 Ω limits ringing and EMI. |
| 5 | Source (S) | Power return path; tied to system ground in high-side configurations or to load in low-side setups. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UIS - eliminates need for additional qualification testing. |
| TrenchFET® architecture | Delivers 21% lower RDS(on) vs. planar P-channel equivalents at same die size, improving power density. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures batch-to-batch reliability. |
| Low VGS(th) range (-0.4 to -1.0 V) | Enables direct drive from 3.3 V or 5 V logic without level-shifting, simplifying interface design in microcontroller-based systems. |
| Source-drain diode VSD = -0.8 to -1.2 V | Reduces reverse recovery losses in freewheeling paths, supporting efficient PWM dimming in LED headlamp drivers. |
Applications
| Automotive Body Control Module (BCM) | Smart Rearview Mirror Heater Control |
|---|---|
Use Scenario: Switching 12 V resistive heating elements in vehicle door modules and interior lighting circuits. IC Role / Device Role / Timing Role: High-side load switch controlling up to 8 A heater loads with fast turn-off to prevent thermal runaway. Use Value: 175 °C junction rating enables mounting directly on heated PCBs; low RDS(on) minimizes self-heating during continuous duty cycles. |
Use Scenario: Regulating power to transparent conductive oxide (TCO) heater layers on electrochromic rearview mirrors. IC Role / Device Role / Timing Role: PWM-controlled low-side switch delivering precise thermal ramp rates (0–60 °C in <30 s). Use Value: Fast fall time (71–93 ns) and low Qg support 20 kHz+ PWM without gate driver overhead, improving temperature resolution. |
| LED Headlamp Dimming Driver | Seat Position Memory Actuator Power Stage |
Use Scenario: Driving high-brightness LED strings in adaptive front-lighting systems (AFS) with analog/digital dimming. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, operating at 500 kHz switching frequency. Use Value: Ciss = 1600–2000 pF and Coss = 620–770 pF enable stable loop response; low RDS(on) reduces conduction loss below 0.2 W. |
Use Scenario: Controlling bidirectional DC motors in power seat adjustment systems with H-bridge half-bridge configuration. IC Role / Device Role / Timing Role: High-side switch in dual-SQ3461EV-T1_BE3 H-bridge providing ±8 A motor current capability. Use Value: Matched RDS(on) across devices ensures balanced current sharing; AEC-Q101 qualification guarantees 15-year field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS | 40 V VDS, 1.4 mΩ RDS(on) @ -10 V, SO-8 package - higher voltage rating but larger footprint and no AEC-Q101 certification. | Targeted at industrial 24/48 V systems; unsuitable for space-constrained automotive modules requiring TSOP-6. | Select only if higher voltage margin or lower RDS(on) at -10 V bias is required and AEC-Q101 compliance is not mandatory. |
| ON Semiconductor NTMFS4C02P | -20 V VDS, 0.028 Ω RDS(on) @ -4.5 V, PowerTDFN 3.3 × 3.3 mm - AEC-Q101 qualified but 30% larger area than TSOP-6. | Used in infotainment power rails; thermal performance limited by smaller copper area in same PCB layout. | Prefer when higher current derating margin is needed; avoid if board space is constrained to TSOP-6 land pattern. |
Compared with BSC014N04LS and NTMFS4C02P, the SQ3461EV-T1_BE3 offers optimal balance of AEC-Q101 compliance, TSOP-6 footprint, -12 V rating matched to automotive battery systems, and proven 175 °C operation - making it the preferred choice for cost-sensitive, space-limited automotive load switches.
Availability
SQ3461EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, smart mirror systems, LED lighting drivers, and seat actuator control requiring stable component supply across extended production lifecycles.
Supply support for SQ3461EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade qualification.
The SQ3461EV-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability load switching in 12 V vehicle networks - prioritizing parametric stability and transient robustness over raw performance metrics.
FAQ
What is the maximum continuous drain current for SQ3461EV-T1_BE3 at 125 °C case temperature?
The SQ3461EV-T1_BE3 supports -6.6 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package and must be applied in thermal design calculations for sustained operation in under-hood environments. The SQ3461EV-T1_BE3 maintains RDS(on) ≤ 0.033 Ω at this condition when VGS = -4.5 V.
Is SQ3461EV-T1_BE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQ3461EV-T1_BE3 is AEC-Q101 qualified, with documentation confirming completion of temperature cycling, high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) tests. The datasheet explicitly states "AEC-Q101 qualified" and notes 100 % Rg and UIS testing per unit - verifying robustness for automotive under-hood deployment. SQ3461EV-T1_BE3 meets the full stress test profile defined in AEC-Q101 Rev D.
What is the gate threshold voltage range for SQ3461EV-T1_BE3, and how does it affect drive compatibility?
The gate threshold voltage (VGS(th)) for SQ3461EV-T1_BE3 is -0.4 V (min) to -1.0 V (max) at ID = -250 μA, enabling reliable turn-on with 3.3 V or 5 V logic-level gate drivers. This low threshold ensures full enhancement even with marginal gate drive margins, reducing risk of partial conduction and thermal failure. The SQ3461EV-T1_BE3 operates predictably across its specified VGS range without requiring external level shifters.
Can SQ3461EV-T1_BE3 be used in high-frequency PWM applications like LED dimming?
Yes, SQ3461EV-T1_BE3 supports high-frequency PWM with turn-on delay of 12–17 ns and fall time of 71–93 ns under standard test conditions (VDD = -6 V, Rg = 1 Ω). Its 21–28 nC total gate charge and 1600–2000 pF input capacitance allow clean switching up to 200 kHz in well-designed gate drive circuits. For LED dimming, the SQ3461EV-T1_BE3 delivers consistent duty-cycle fidelity and minimal shoot-through risk in half-bridge configurations.
What is the safe operating area (SOA) limitation for SQ3461EV-T1_BE3 in single-pulse conditions?
The SQ3461EV-T1_BE3 SOA curve shows pulse-width-limited operation: at VDS = -6 V, it supports up to -30 A for 100 μs pulses, while at VDS = -12 V, the limit drops to ~-10 A for the same duration. The device is bounded by RDS(on) at low VDS, by avalanche energy (14 mJ) at mid-VDS, and by BVDSS at high VDS. These boundaries are validated per Figure 5 in the datasheet and apply to single-pulse conditions only. SQ3461EV-T1_BE3 must be operated within these limits to avoid permanent damage.
SQ3461EV-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 7.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3461EV-T1_BE3 FAQ
1.How can I place an order for SQ3461EV-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3461EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3461EV-T1_BE3 reliable?
The price and inventory of SQ3461EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3461EV-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ3461EV-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3461EV-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3461EV-T1_BE3?
SQ3461EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3461EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3461EV-T1_BE3?
For technical support, including SQ3461EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3461EV-T1_BE3 requirements.
6.How does Aetrix verify that SQ3461EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ3461EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3461EV-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ3461EV-T1_BE3?
All SQ3461EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3461EV-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3461EV-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ3461EV-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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