Vishay Siliconix SQ3461EV-T1_GE3

Overview

SQ3461EV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -12 V drain-source voltage, 0.025 Ω R_DS(on) at V_GS = -4.5 V, -8 A continuous drain current, and 175 °C maximum junction temperature. It serves as a high-reliability load switch in low-voltage automotive power distribution systems including body control modules and LED lighting drivers.

For engineers reviewing the SQ3461EV-T1_GE3 datasheet, SQ3461EV-T1_GE3 pinout, SQ3461EV-T1_GE3 application, or SQ3461EV-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, thermal performance under 125 °C ambient, and compatibility with 1.8 V–4.5 V logic-level gate drive in space-constrained PCB layouts.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 21–28 nC) and low gate resistance (R_g = 2.8–8.6 Ω). Its negative threshold voltage (-0.4 to -1.0 V) ensures robust turn-on at low gate drive voltages while maintaining low leakage (I_DSS ≤ -150 μA at 175 °C).

The device features integrated source-drain diode with V_SD = -0.8 to -1.2 V at -2 A, supports single-pulse avalanche energy up to 14 mJ, and is characterized for operation across -55 to +175 °C junction temperature range-enabling use in under-hood automotive environments without derating penalties.

Key Specifications

Pinout & Package

TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.0 mm profile, lead (Pb)-free and halogen-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMG2305UVT-7 and SI2305DS-T1-BE3, SQ3461EV-T1_GE3 delivers 45 % lower R_DS(on), 25 °C higher junction rating, and full AEC-Q101 compliance-making it the only option qualified for under-hood automotive switching with >6 A sustained current.

Availability

SQ3461EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting systems, and engine management subsystems requiring stable component supply across multi-year production cycles.

Supply support for SQ3461EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ3461EV-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability 12 V system switching where low R_DS(on), AEC-Q101 compliance, and thermal ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for SQ3461EV-T1_GE3 at 125 °C case temperature?

The SQ3461EV-T1_GE3 supports -6.6 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TSOP-6 package under typical PCB mounting conditions and ensures safe operation in high-ambient automotive environments. The SQ3461EV-T1_GE3 maintains R_DS(on) ≤ 0.033 Ω at this condition when driven with -4.5 V gate voltage.

Is SQ3461EV-T1_GE3 suitable for reverse polarity protection in 12 V automotive systems?

Yes, SQ3461EV-T1_GE3 is well-suited for reverse polarity protection due to its -12 V V_DS rating, low R_DS(on) (0.025 Ω @ -4.5 V), and integrated body diode with V_SD ≤ -1.2 V. When placed in the high-side configuration, it blocks reverse current while introducing minimal forward voltage drop-reducing power loss and heat generation compared to Schottky solutions. The SQ3461EV-T1_GE3's AEC-Q101 qualification further validates its robustness against load dump and jump-start transients.

Does SQ3461EV-T1_GE3 require a gate driver IC for PWM operation at 20 kHz?

No, SQ3461EV-T1_GE3 can be directly driven by standard 3.3 V or 5 V microcontroller GPIO pins for 20 kHz PWM, thanks to its low gate threshold (-0.4 to -1.0 V) and moderate total gate charge (21–28 nC). With a 100 Ω series gate resistor, turn-on delay remains under 20 ns and rise time under 70 ns. However, for optimal efficiency and reduced switching losses, a dedicated gate driver is recommended above 50 kHz or when driving multiple parallel devices. The SQ3461EV-T1_GE3's R_g = 2.8–8.6 Ω simplifies gate loop design.

What is the avalanche energy rating of SQ3461EV-T1_GE3 and how is it validated?

The SQ3461EV-T1_GE3 is rated for 14 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, tested per JEDEC JESD24-11. This rating is confirmed through 100 % UIS (unclamped inductive switching) screening on every production lot, ensuring robustness against inductive kickback in relay-coil or motor-drive applications. The SQ3461EV-T1_GE3's trench structure and optimized cell layout contribute to consistent avalanche performance across temperature, supporting reliable operation in automotive power switching without external snubbers.

How does the thermal resistance of SQ3461EV-T1_GE3 compare between junction-to-case and junction-to-ambient?

The SQ3461EV-T1_GE3 has R_thJF = 30 °C/W (junction-to-foot/drain) and R_thJA = 110 °C/W (junction-to-ambient on 1"² FR4 PCB). The 3.7× difference highlights the importance of thermal vias under the drain pads: routing heat to inner copper planes or external heatsinks via the drain terminals reduces effective thermal resistance significantly. For example, adding six 0.3 mm thermal vias beneath the drain pads can improve R_thJA to ~65 °C/W. This thermal behavior is intrinsic to the SQ3461EV-T1_GE3's TSOP-6 construction and must be modeled in thermal simulations.