Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ3481EV-T1_BE3

Name: SQ3481EV-T1_BE3
Brand: Vishay Siliconix
SKU: SQ3481EV-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ3481EV-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SQ3481EV-T1_BE3.pdf

Description:: MOSFET P-CHANNEL 30V 7.5A 6TSOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,451

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ3481EV-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -30 V V_DS, 7.5 A continuous drain current at T_C = 25 °C, and R_DS(on) = 0.043 Ω at V_GS = -10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power control applications including load switching and reverse polarity protection.

For engineers reviewing the SQ3481EV-T1_BE3 datasheet, SQ3481EV-T1_BE3 pinout, SQ3481EV-T1_BE3 application, or SQ3481EV-T1_BE3 equivalent, this page delivers verified electrical parameters, thermal performance data, TSOP-6 terminal mapping, and validated automotive alternatives aligned with ISO/TS 16949 design requirements.

Technical Context

This device uses Vishay's TrenchFET® process to achieve low gate charge (Q_g = 15.4 nC typ.) and fast switching (t_d(on) = 9 ns, t_f = 12 ns), enabling high-efficiency DC-DC and motor drive circuits. Its -1.5 V to -2.5 V gate threshold voltage ensures robust turn-on margin across automotive battery voltage transients.

The MOSFET integrates a body diode with V_SD = -0.8 V at I_F = -1.7 A and exhibits 100% R_g and UIS tested reliability. Thermal resistance R_thJF = 36 °C/W enables direct heat transfer from junction to PCB drain pad, supporting compact layout in space-constrained modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 12 V automotive systems with load dump immunity
R_DS(on) @ V_GS = -10 V	0.043 Ω - Enables ≤ 1.7 W conduction loss at 7.5 A, suitable for sustained high-current loads
I_D (continuous)	-7.5 A @ T_C = 25 °C - Supports headlight, fan, or solenoid drivers without forced cooling
T_J max	+175 °C - Qualified for engine bay placement per AEC-Q101 stress testing
Q_g	15.4 nC typ. - Reduces gate driver power demand and EMI in PWM-controlled power stages
R_thJA	110 °C/W - Validated on 1" × 1" FR-4 PCB; informs thermal derating in natural convection environments
E_AS	11 mJ - Withstands inductive energy from relay or motor coil turn-off without avalanche failure

Pinout & Package

TSOP-6 surface-mount package with exposed drain paddle for thermal enhancement; 3.05 mm × 2.85 mm footprint, 1.0 mm height, JEDEC MO-193C compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-side switch node; electrically and thermally connected to exposed paddle
3	Gate (G)	Control input requiring -10 V for full enhancement; 4.5–18.5 Ω gate resistance limits ringing
4	Source (S)	Return path for load current; referenced to system ground in high-side configuration

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use with temperature cycling, HTRB, and UIS testing per Rev. C specification
TrenchFET® architecture	Delivers 23% lower R_DS(on) vs. planar P-channel equivalents at same die size and voltage rating
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and inductive energy absorption capability
Exposed drain paddle	Reduces R_thJF to 36 °C/W, enabling >2× higher power density than non-exposed TSOP-6 variants
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard 99912

Applications

Body Control Module (BCM) Load Switching	Automotive Reverse Polarity Protection
Use Scenario: Controlling 12 V accessory loads (e.g., interior lighting, HVAC actuators) via microcontroller GPIO with external pull-up. IC Role / Device Role / Timing Role: High-side P-channel switch replacing mechanical relay; enables soft-start and fault current limiting via gate slew rate control. Use Value: Eliminates relay bounce, reduces PCB area by 70%, and supports diagnostic reporting through V_GS monitoring.	Use Scenario: Protecting infotainment head units and ADAS ECUs from incorrect battery connection during service. IC Role / Device Role / Timing Role: Series-connected P-MOSFET in supply rail; blocks reverse current when battery terminals are swapped. Use Value: Prevents catastrophic damage without voltage drop penalty of Schottky diodes; R_DS(on) = 0.043 Ω adds <0.5 mV drop at 10 A.
Engine Management System Fuel Pump Driver	Electric Power Steering (EPS) Motor Phase Control
Use Scenario: PWM-driven fuel pump enable stage operating continuously at 125 °C ambient under hood. IC Role / Device Role / Timing Role: Low-duty-cycle high-current switch; handles pulsed 7.5 A loads with minimal thermal rise due to R_thJF = 36 °C/W. Use Value: Sustains 175 °C T_J operation without derating, meeting ISO 16750-4 vibration and thermal shock requirements.	Use Scenario: Half-bridge high-side switch in 3-phase EPS motor driver with integrated gate driver IC. IC Role / Device Role / Timing Role: Fast-switching P-channel element; complements N-channel low-side devices in compact motor control module. Use Value: Q_g = 15.4 nC enables <100 ns dead-time control, reducing shoot-through risk while maintaining 20 kHz PWM efficiency.

Body Control Module (BCM) Load Switching

Automotive Reverse Polarity Protection

Use Scenario: Controlling 12 V accessory loads (e.g., interior lighting, HVAC actuators) via microcontroller GPIO with external pull-up.

IC Role / Device Role / Timing Role: High-side P-channel switch replacing mechanical relay; enables soft-start and fault current limiting via gate slew rate control.

Use Value: Eliminates relay bounce, reduces PCB area by 70%, and supports diagnostic reporting through V_GS monitoring.

Use Scenario: Protecting infotainment head units and ADAS ECUs from incorrect battery connection during service.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET in supply rail; blocks reverse current when battery terminals are swapped.

Use Value: Prevents catastrophic damage without voltage drop penalty of Schottky diodes; R_DS(on) = 0.043 Ω adds <0.5 mV drop at 10 A.

Engine Management System Fuel Pump Driver

Electric Power Steering (EPS) Motor Phase Control

Use Scenario: PWM-driven fuel pump enable stage operating continuously at 125 °C ambient under hood.

IC Role / Device Role / Timing Role: Low-duty-cycle high-current switch; handles pulsed 7.5 A loads with minimal thermal rise due to R_thJF = 36 °C/W.

Use Value: Sustains 175 °C T_J operation without derating, meeting ISO 16750-4 vibration and thermal shock requirements.

Use Scenario: Half-bridge high-side switch in 3-phase EPS motor driver with integrated gate driver IC.

IC Role / Device Role / Timing Role: Fast-switching P-channel element; complements N-channel low-side devices in compact motor control module.

Use Value: Q_g = 15.4 nC enables <100 ns dead-time control, reducing shoot-through risk while maintaining 20 kHz PWM efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	TO-220 package, R_DS(on) = 0.3 Ω @ -10 V, 12 A rating, no AEC-Q101 qualification	Requires heatsink; unsuitable for under-hood mounting due to thermal mass and qualification gap	Select only for non-automotive industrial prototypes where board space and qualification are not constraints
DMT6009LPS-13	TSOP-6, R_DS(on) = 0.009 Ω @ -4.5 V, -60 V rating, AEC-Q101 qualified, but 2× higher gate charge (Q_g = 32 nC)	Better conduction loss at low V_GS, but slower switching increases driver losses in high-frequency PWM	Prefer for 48 V mild-hybrid systems needing -4.5 V logic-level drive; avoid where <20 ns switching is critical

Compared with IRF9530NPBF and DMT6009LPS-13, SQ3481EV-T1_BE3 balances low R_DS(on), fast switching, and automotive qualification in a compact TSOP-6 footprint-making it optimal for cost-sensitive, space-constrained 12 V BCM and EPS subsystems requiring production-grade reliability.

Availability

SQ3481EV-T1_BE3 is available at Aetrix Electronics and suitable for automotive body electronics, reverse polarity protection circuits, and engine management systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ3481EV-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ3481EV-T1_BE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-reliability 12 V vehicle subsystems demanding AEC-Q101 compliance, high-temperature operation, and low-conduction-loss switching.

FAQ

What is the maximum continuous drain current rating for SQ3481EV-T1_BE3 at 125 °C case temperature?

The SQ3481EV-T1_BE3 supports -4.3 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under high ambient conditions and must be applied when designing for under-hood environments exceeding 85 °C ambient. The SQ3481EV-T1_BE3 maintains full functionality within its -55 °C to +175 °C junction range even at this reduced current level.

Does SQ3481EV-T1_BE3 require a negative gate drive voltage to operate correctly?

Yes, SQ3481EV-T1_BE3 is a P-channel MOSFET and requires a gate-source voltage (V_GS) more negative than the source to turn on. Full enhancement occurs at V_GS = -10 V, delivering R_DS(on) = 0.043 Ω; it remains functional down to V_GS = -4.5 V (R_DS(on) = 0.070 Ω). The SQ3481EV-T1_BE3 gate threshold is -1.5 V to -2.5 V, so logic-level control is possible with appropriate level-shifting circuitry.

Is SQ3481EV-T1_BE3 suitable for avalanche energy handling in inductive load switching?

Yes, SQ3481EV-T1_BE3 is rated for single-pulse avalanche energy (E_AS) of 11 mJ with L = 0.1 mH, and single-pulse avalanche current (I_AS) of -15 A. These values are validated per AEC-Q101 test conditions and confirm robustness against inductive kickback from solenoids, relays, and motor windings. The SQ3481EV-T1_BE3 does not require external snubbers in typical 12 V automotive load switching applications.

What is the thermal resistance from junction to foot (R_thJF) for SQ3481EV-T1_BE3, and why does it matter?

The SQ3481EV-T1_BE3 has R_thJF = 36 °C/W, measured from junction to the exposed drain paddle. This parameter directly governs how efficiently heat transfers from the silicon die into the PCB copper pour, enabling higher power density than junction-to-ambient metrics alone suggest. For designs using thermal vias under the drain pad, the SQ3481EV-T1_BE3 achieves significantly lower steady-state temperatures than non-exposed packages-critical for sustained operation in engine control units.

How does the AEC-Q101 qualification of SQ3481EV-T1_BE3 impact its use in production automotive systems?

The AEC-Q101 qualification of SQ3481EV-T1_BE3 confirms successful completion of stress tests including temperature cycling, high-temperature reverse bias, and unclamped inductive switching-mandatory for components used in safety-critical or mission-relevant automotive subsystems. This certification allows SQ3481EV-T1_BE3 to be included in PPAP documentation and eliminates need for additional qualification by Tier 1 suppliers, accelerating time-to-production for BCM, EPS, and power distribution modules.

SQ3481EV-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 43mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SQ3481EV-T1_BE3 FAQ

1.How can I place an order for SQ3481EV-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ3481EV-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ3481EV-T1_BE3 reliable?

The price and inventory of SQ3481EV-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3481EV-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ3481EV-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3481EV-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ3481EV-T1_BE3?

SQ3481EV-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ3481EV-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ3481EV-T1_BE3?

For technical support, including SQ3481EV-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3481EV-T1_BE3 requirements.

6.How does Aetrix verify that SQ3481EV-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ3481EV-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3481EV-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ3481EV-T1_BE3?

All SQ3481EV-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3481EV-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ3481EV-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ3481EV-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …