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Vishay Siliconix SQ3481EV-T1_GE3
- Part No.:
- SQ3481EV-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3481EV-T1_GE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 7.5A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,223
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Product details
Overview
SQ3481EV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -30 V VDS, 7.5 A continuous drain current at TC = 25 °C, and RDS(on) = 0.043 Ω at VGS = -10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power control applications including load switching and reverse polarity protection.
For engineers reviewing the SQ3481EV-T1_GE3 datasheet, SQ3481EV-T1_GE3 pinout, SQ3481EV-T1_GE3 application, or SQ3481EV-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, TSOP-6 terminal mapping, and validated alternatives for automotive power design validation and BOM optimization.
Technical Context
This MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 15.4 nC typ. at VGS = -10 V). Its -2.0 V typical gate threshold voltage (VGS(th)) enables reliable turn-on from standard 3.3 V or 5 V logic-level controllers in high-side configurations.
The device integrates a robust body diode with VSD = -0.8 V typ. at IF = -1.7 A and supports single-pulse avalanche energy of 11 mJ. Thermal resistance from junction-to-foot is 36 °C/W, enabling direct heat transfer to PCB copper planes in space-constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load dump margin |
| RDS(on) @ VGS = -10 V | 0.043 Ω - Enables ≤ 1.7 W conduction loss at 7.5 A, supporting thermally constrained PCB layouts |
| ID Continuous @ TC = 25 °C | -7.5 A - Sustained current capability for solenoid drivers and motor H-bridge high-side switches |
| TJ Operating Range | -55 to +175 °C - Qualified for engine bay, transmission control, and ADAS ECU environments |
| Qg Total Gate Charge | 15.4 nC typ. - Supports <100 ns switching transitions with 1 Ω gate driver, minimizing dynamic losses |
| AEC-Q101 Qualified | Yes - Validated per stress test requirements for automotive electronics reliability and lifetime compliance |
| RthJA | 110 °C/W - Thermal limit for surface-mount operation on 1" × 1" FR-4 PCB with 2 oz copper |
Pinout & Package
TSOP-6 package (JEDEC MO-193C), 3.05 mm × 2.85 mm footprint, 0.95 mm pitch, 1.0 mm max height. Exposed drain pad on bottom for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Common high-current output node; electrically and thermally connected to exposed pad |
| 3 | Gate (G) | Control input requiring -10 V to fully enhance; 4.5–18.5 Ω gate resistance affects drive timing |
| 4 | Source (S) | Reference node for gate drive; tied to system ground or load return in high-side switch topology |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Power MOSFET architecture | Delivers 25 % lower RDS(on) vs. planar P-channel equivalents at same die size, reducing board area and thermal mass |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and unclamped inductive switching stress in relay/solenoid circuits |
| Exposed drain thermal pad | Enables 36 °C/W junction-to-foot thermal path, allowing >2× power dissipation vs. non-exposed SO-8 equivalents |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and ELV End-of-Life Vehicle requirements for global automotive supply chains |
Applications
| Engine Control Unit (ECU) Load Switching | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side power switching for fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with logic-level gate drive from microcontroller GPIO. Use Value: Low RDS(on) minimizes voltage drop during peak 5–7 A pulses; 175 °C rating ensures stable operation near hot engine components. | Use Scenario: Reverse polarity protection and battery disconnect in BCM power distribution networks. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and downstream 12 V rail, activated only when polarity is correct. Use Value: Fast turn-off (<42 ns td(off)) prevents latch-up during battery jump-start events; AEC-Q101 qualification guarantees field reliability. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Control |
Use Scenario: Controlled power enable for CMOS image sensors and ISP processors in rear-view and surround-view camera modules. IC Role / Device Role / Timing Role: High-side switch isolating camera subsystem during sleep mode to meet ISO 16750-2 quiescent current targets. Use Value: Ultra-low IDSS (<1 μA at TJ = 25 °C) ensures <10 μA total leakage per channel, critical for multi-camera systems. | Use Scenario: High-side switch in EPS motor phase-leg drivers for torque assist control and fail-safe shutdown. IC Role / Device Role / Timing Role: P-channel MOSFET used in conjunction with N-channel low-side devices to form half-bridge outputs. Use Value: 15 mJ single-pulse avalanche energy rating withstands inductive kickback during emergency motor stop without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.3 Ω @ -10 V), no AEC-Q101 qualification | Industrial/non-automotive use only; unsuitable for under-hood deployment | Select only for cost-sensitive prototyping where automotive qualification is not required |
| DMT3006LPS-13 | TSOP-6, -30 V, RDS(on) = 0.045 Ω @ -10 V, AEC-Q101 qualified, but lower ID (6.5 A) | Same footprint and qualification; reduced current headroom for peak-load scenarios | Valid alternative if design operates below 6.5 A continuous and shares identical layout |
Compared with IRF9530NPBF and DMT3006LPS-13, SQ3481EV-T1_GE3 provides the highest current rating (-7.5 A) in an AEC-Q101-qualified TSOP-6 package, making it optimal for space-constrained automotive modules requiring both thermal efficiency and production compliance.
Availability
SQ3481EV-T1_GE3 is available at Aetrix Electronics and suitable for automotive power management, engine control unit (ECU) load switching, and advanced driver assistance systems (ADAS) requiring stable component supply across extended temperature ranges and long lifecycle commitments.
Supply support for SQ3481EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQ3481EV-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine control, body electronics, and safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQ3481EV-T1_GE3 at 125 °C case temperature?
The SQ3481EV-T1_GE3 supports -4.3 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained high-temperature operation, and must be applied in thermal simulations for engine bay applications. The SQ3481EV-T1_GE3 maintains full functionality across its -55 °C to +175 °C junction range.
Is SQ3481EV-T1_GE3 suitable for high-side switching with 3.3 V logic-level gate drive?
The SQ3481EV-T1_GE3 has a typical VGS(th) of -2.0 V and RDS(on) = 0.070 Ω at VGS = -4.5 V, making it compatible with 3.3 V microcontrollers when driven through an inverting level shifter or dedicated gate driver IC. Direct 3.3 V drive yields partial enhancement; full performance requires ≥ -4.5 V gate bias. The SQ3481EV-T1_GE3 datasheet confirms operation down to -4.5 V gate drive in its specifications table.
Does SQ3481EV-T1_GE3 include integrated ESD protection on the gate terminal?
The SQ3481EV-T1_GE3 does not specify integrated gate ESD protection in its datasheet; however, it undergoes 100 % Rg testing and is rated for ±20 V gate-source voltage, indicating robustness against transient overstress. External gate resistors (≥10 Ω) and TVS diodes are recommended for systems exposed to ISO 10605 or IEC 61000-4-2 events. The SQ3481EV-T1_GE3 gate oxide is qualified per AEC-Q101 stress conditions, but no explicit ESD rating (e.g., HBM) is published.
What is the thermal resistance from junction to ambient (RthJA) for SQ3481EV-T1_GE3 on a standard PCB?
The SQ3481EV-T1_GE3 has a junction-to-ambient thermal resistance of 110 °C/W when mounted on a 1" × 1" FR-4 PCB with 2 oz copper on both sides, as defined in its Thermal Resistance Ratings table. This value assumes no additional heatsinking and is used for worst-case steady-state thermal analysis. For improved thermal performance, the exposed drain pad must be soldered to a large copper pour, as confirmed in the SQ3481EV-T1_GE3 package drawing documentation.
Can SQ3481EV-T1_GE3 replace N-channel MOSFETs in high-side configurations without additional circuitry?
No - the SQ3481EV-T1_GE3 is a P-channel MOSFET and can operate directly as a high-side switch with referenced gate drive, unlike N-channel devices which require bootstrap or isolated gate drivers. Its -30 V VDS rating and -7.5 A current capability make it a native high-side solution for 12 V automotive rails. Replacing an N-channel high-side switch with SQ3481EV-T1_GE3 eliminates gate drive complexity while maintaining identical functionality and layout compatibility in TSOP-6 footprints.
SQ3481EV-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 43mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3481EV-T1_GE3 FAQ
1.How can I place an order for SQ3481EV-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3481EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3481EV-T1_GE3 reliable?
The price and inventory of SQ3481EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3481EV-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ3481EV-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3481EV-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3481EV-T1_GE3?
SQ3481EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3481EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3481EV-T1_GE3?
For technical support, including SQ3481EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3481EV-T1_GE3 requirements.
6.How does Aetrix verify that SQ3481EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ3481EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3481EV-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ3481EV-T1_GE3?
All SQ3481EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3481EV-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3481EV-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ3481EV-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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