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Vishay Siliconix SQ3493EV-T1_GE3
- Part No.:
- SQ3493EV-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SQ3493EV-T1_GE3.pdf
- Description:
- MOSFET P-CH 20V 8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,373
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Product details
Overview
SQ3493EV-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -20 V drain-source voltage, 0.021 Ω RDS(on) at VGS = -4.5 V, -8 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It serves as a high-reliability load switch or power distribution control device in engine control units and body electronics.
For engineers reviewing the SQ3493EV-T1_GE3 datasheet, SQ3493EV-T1_GE3 pinout, SQ3493EV-T1_GE3 application, or SQ3493EV-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, -1.4 V gate threshold voltage range, 100 % Rg and UIS tested reliability, and thermal performance with RthJF = 30 °C/W to drain foot.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching in a compact surface-mount package. Its gate threshold voltage of -0.6 V to -1.4 V enables robust turn-on with standard 3.3 V or 5 V logic-level drive in automotive systems.
The device features 100 % UIS (unclamped inductive switching) testing and guaranteed Rg (gate resistance) between 2.3 Ω and 9.4 Ω, supporting predictable gate drive design and EMI control. Thermal design is aided by low junction-to-foot resistance (30 °C/W), allowing efficient heat transfer to PCB copper planes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 12 V automotive battery rail protection |
| RDS(on) @ VGS = -4.5 V | 0.021 Ω - Enables ≤ 0.84 W conduction loss at -8 A, critical for thermally constrained modules |
| ID (continuous) | -8 A @ TC = 25 °C - Supports high-side switching of loads up to ~100 W in ambient-cooled applications |
| TJ max | +175 °C - Meets under-hood temperature requirements per AEC-Q101 Grade 0 |
| Qg | 22.7 nC (typ) - Determines gate drive power and switching speed in PWM-controlled DC-DC stages |
| RthJF | 30 °C/W - Enables direct thermal coupling to PCB ground plane without heatsink in space-constrained layouts |
| VGS(th) | -1.0 V (typ) - Ensures full enhancement with 3.3 V microcontroller GPIO, eliminating level-shifter need |
Pinout & Package
TSOP-6 package: 1.55 mm × 2.95 mm footprint, 0.95 mm pitch, 1.0 mm height, JEDEC MO-193C compliant. Optimized for automated assembly and thermal dissipation via exposed drain pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Internally connected to common drain terminal; electrically and thermally tied to exposed pad for low-inductance, high-current paths |
| 3 | Gate (G) | Control input requiring <22.7 nC charge for full turn-on; sensitive to ESD (±12 V rating) |
| 4 | Source (S) | Reference node for gate drive; connects to load return path; carries full switched current (-8 A) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications with zero defects in accelerated stress testing |
| 100 % Rg and UIS tested | Each unit verified for gate resistance consistency and ruggedness against inductive load transients |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar P-channel MOSFETs at same die size, improving power density |
| 175 °C operation | Enables placement near heat sources (e.g., ECUs, motor drivers) without derating or forced cooling |
| Low Qgd/Qg ratio | 6.4 nC / 22.7 nC ≈ 0.28 - Reduces Miller effect, enabling stable high-frequency switching up to 500 kHz |
Applications
| Engine Control Unit Power Distribution | Automotive Body Control Module |
|---|---|
Use Scenario: Switching 12 V supply to fuel injector drivers, ignition coils, and sensor bias rails in ECU main board. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling power domain sequencing and fault-isolation. Use Value: -20 V rating withstands load-dump transients; 175 °C rating supports operation adjacent to MCU die; RDS(on) < 0.025 Ω minimizes voltage drop during cranking. | Use Scenario: Managing power to door lock actuators, window lift motors, and interior lighting in BCM subassembly. IC Role / Device Role / Timing Role: Low-side or high-side discrete switch interfacing with 3.3 V microcontroller GPIOs. Use Value: -1.0 V VGS(th) ensures reliable turn-on with 3.3 V logic; TSOP-6 footprint saves board area vs. SO-8; AEC-Q101 compliance guarantees field longevity. |
| LED Headlamp Driver Protection | Start-Stop System Load Management |
Use Scenario: Reverse-polarity and overcurrent protection for adaptive LED headlamp arrays in front-end modules. IC Role / Device Role / Timing Role: P-channel high-side switch with integrated body diode used for reverse-battery protection and soft-start control. Use Value: VSD = -0.8 V (typ) at -5 A enables low-loss freewheeling; 100 % UIS tested withstands inductive kickback from LED driver inductors. | Use Scenario: Controlling auxiliary loads (HVAC blower, infotainment) during engine restart in 12 V start-stop systems. IC Role / Device Role / Timing Role: Power distribution switch activated by vehicle network command to reduce battery drain during idle. Use Value: RthJF = 30 °C/W allows direct mounting to thick copper pour, sustaining -7 A at 125 °C case temperature without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2011UFD-7 | RDS(on) = 0.019 Ω @ -4.5 V, but rated only to +150 °C and not AEC-Q101 qualified | Limited to non-safety-critical cabin modules; lacks automotive reliability validation | Use where cost is prioritized over under-hood temperature capability and qualification rigor |
| IPD80P03P4L-04 | Higher VDS (-30 V), larger TO-252 package, RDS(on) = 0.004 Ω @ -10 V - requires gate driver for 3.3 V logic | Better for high-power (>100 W) loads but incompatible with space-constrained TSOP-6 layouts | Select when higher voltage margin and lower conduction loss justify larger footprint and gate drive complexity |
Compared with DMN2011UFD-7 and IPD80P03P4L-04, SQ3493EV-T1_GE3 uniquely balances AEC-Q101 compliance, 175 °C operation, and logic-level drive in a 3 mm × 3 mm footprint-making it optimal for thermally dense, safety-aware automotive modules where qualification and size are non-negotiable.
Availability
SQ3493EV-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, LED headlamp drivers, and start-stop system load management requiring stable component supply across automotive production lifecycles.
Supply support for SQ3493EV-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ3493EV-T1_GE3 belongs to Vishay's TrenchFET® automotive P-channel MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine bay and chassis electronics.
FAQ
What is the gate threshold voltage range for SQ3493EV-T1_GE3?
The SQ3493EV-T1_GE3 has a gate-source threshold voltage (VGS(th)) range of -0.6 V to -1.4 V at ID = -250 μA. This ensures reliable turn-on with standard 3.3 V microcontroller outputs, as the typical value of -1.0 V provides sufficient margin below the logic-high level. The SQ3493EV-T1_GE3 does not require external level shifting in most automotive MCU interfaces.
Is SQ3493EV-T1_GE3 suitable for high-temperature under-hood applications?
Yes, SQ3493EV-T1_GE3 is rated for junction temperatures up to +175 °C and is AEC-Q101 qualified, making it suitable for under-hood applications such as engine control units and transmission control modules. Its RthJF of 30 °C/W enables effective heat transfer to the PCB, and the device maintains RDS(on) ≤ 0.034 Ω even at 175 °C, ensuring stable performance in harsh thermal environments. SQ3493EV-T1_GE3 meets Grade 0 automotive temperature requirements.
Does SQ3493EV-T1_GE3 have built-in protection features?
SQ3493EV-T1_GE3 includes 100 % unclamped inductive switching (UIS) testing and 100 % gate resistance (Rg) screening-key reliability validations for automotive use. While it does not integrate active protection circuitry (e.g., overtemperature shutdown), its rugged TrenchFET® structure, -20 V VDS rating, and -32 A pulsed drain current capability provide inherent robustness against load dump, inductive kickback, and short-circuit events. SQ3493EV-T1_GE3 relies on external circuit design for comprehensive system-level protection.
What is the recommended PCB layout for thermal performance of SQ3493EV-T1_GE3?
For optimal thermal performance, SQ3493EV-T1_GE3 should be mounted on a 1" square FR4 PCB with 2 oz. copper on both sides, per Vishay's characterization. The exposed drain pads (pins 1, 2, 5, 6) must connect to large copper pours or internal ground planes using multiple thermal vias (≥6 × 0.3 mm). The recommended land pattern follows Vishay document 72610 for TSOP-6L, with 0.95 mm pitch and 1.65 mm E1 dimension. SQ3493EV-T1_GE3 achieves RthJA = 110 °C/W under these conditions.
Can SQ3493EV-T1_GE3 replace an N-channel MOSFET in high-side switching?
Yes, SQ3493EV-T1_GE3 is a P-channel MOSFET designed explicitly for high-side switching in 12 V automotive systems, eliminating the need for a charge pump or floating gate driver required by N-channel devices. Its -20 V VDS, -8 A continuous rating, and logic-level gate drive make it a direct solution for high-side power distribution where simplicity, reliability, and space constraints matter. SQ3493EV-T1_GE3 simplifies schematic design and reduces bill-of-materials count compared to N-channel alternatives.
SQ3493EV-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SQ3493EV-T1_GE3 FAQ
1.How can I place an order for SQ3493EV-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ3493EV-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ3493EV-T1_GE3 reliable?
The price and inventory of SQ3493EV-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ3493EV-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ3493EV-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ3493EV-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ3493EV-T1_GE3?
SQ3493EV-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ3493EV-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ3493EV-T1_GE3?
For technical support, including SQ3493EV-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ3493EV-T1_GE3 requirements.
6.How does Aetrix verify that SQ3493EV-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ3493EV-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ3493EV-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ3493EV-T1_GE3?
All SQ3493EV-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ3493EV-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ3493EV-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ3493EV-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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