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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4005EY-T1_BE3

Name: SQ4005EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4005EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4005EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4005EY-T1_BE3.pdf

Description:: MOSFET P-CHANNEL 12V 15A 8SOIC

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Product details

Overview

SQ4005EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel MOSFET in SO-8 package, rated for -12 V V_DS, 0.016 Ω R_DS(on) at -4.5 V V_GS, and -15 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power control applications.

For engineers reviewing the SQ4005EY-T1_BE3 datasheet, SQ4005EY-T1_BE3 pinout, SQ4005EY-T1_BE3 application, or SQ4005EY-T1_BE3 equivalent, this page delivers verified electrical specs, thermal performance data, SO-8 terminal mapping, and validated alternatives for automotive body electronics, load switching, and reverse polarity protection designs.

Technical Context

This P-channel enhancement-mode MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance with gate threshold voltage of -0.45 V to -1.0 V and guaranteed 100 % R_g and UIS testing. Its SO-8 footprint supports PCB-mount thermal management with R_thJA = 92 °C/W and R_thJF = 25 °C/W.

The device features integrated source-drain diode with V_SD = -0.8 V to -1.1 V at -10 A, and dynamic parameters including C_iss = 2433–3600 pF, Q_g = 29–38 nC, and t_d(on)/t_r/t_d(off)/t_f = 19/33/73/30 ns (typ) under specified test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum drain-source blocking voltage for 12 V automotive systems
R_DS(on) @ V_GS = -4.5 V	0.016 Ω (max) - Enables <1.5 W conduction loss at -13.5 A, critical for high-efficiency load switches
I_D (continuous)	-15 A @ T_C = 25 °C - Supports robust power delivery in engine control modules and lighting drivers
T_J range	-55 °C to +175 °C - Qualified for under-hood environments per AEC-Q101
Q_g	29–38 nC - Determines gate drive energy requirement and switching speed in PWM circuits
V_GS(th)	-0.45 to -1.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers
E_AS	20 mJ - Specifies single-pulse avalanche energy handling capability for inductive load protection

Pinout & Package

SO-8 (Narrow) package per JEDEC MS-012, surface-mount, lead (Pb)-free and halogen-free. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A), pitch = 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Source (S)	Common source connection; pins 1–4 are internally tied; pin 5 is isolated source pad for thermal relief
6, 7, 8	Drain (D)	Power output node; pins 6–8 are internally connected drain leads for low-inductance, high-current routing
4	Gate (G)	Control input; pin 4 is dedicated gate terminal with R_g = 1.3–4 Ω (typ/meas)

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated reliability for automotive powertrain and chassis applications requiring >15-year service life
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and unclamped inductive switching stress
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling compact SO-8 thermal performance
175 °C maximum T_J	Supports operation in high-ambient zones such as near exhaust manifolds or battery junction boxes
Low V_GS(th) distribution	Narrow -0.45 V to -1.0 V range simplifies gate driver design and improves system consistency across temperature

Applications

Body Control Module (BCM)	Reverse Polarity Protection
Use Scenario: Controlling door lock actuators, interior lighting, and window lift motors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: High-side load switch managing up to -15 A DC loads with fast turn-off for fault isolation. Use Value: Low R_DS(on) minimizes heat generation during sustained operation; AEC-Q101 ensures long-term reliability in vibration-prone cabin environments.	Use Scenario: Protecting downstream ECUs and sensors from battery misconnection in aftermarket or service scenarios. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery positive and system input to block reverse current flow. Use Value: -12 V V_DS rating matches nominal vehicle battery; -0.45 V V_GS(th) enables immediate conduction when polarity is correct.
Engine Control Unit (ECU) Power Distribution	LED Headlamp Driver
Use Scenario: Switching 12 V power rails to fuel injectors, ignition coils, and solenoid valves in engine management systems. IC Role / Device Role / Timing Role: High-side switch with fast switching (t_f = 30 ns typ) to support precise pulse-width modulated actuation. Use Value: 20 mJ E_AS withstands inductive kickback without external snubbers; 175 °C T_J rating accommodates under-hood ambient up to 125 °C.	Use Scenario: Driving high-brightness LED arrays in adaptive front-lighting systems (AFS) with PWM dimming. IC Role / Device Role / Timing Role: Low-loss series switch regulating current to LED strings via constant-current feedback loop. Use Value: 0.016 Ω R_DS(on) limits conduction loss to <2.2 W at 12 A, reducing thermal load on headlamp PCBs.

Body Control Module (BCM)

Reverse Polarity Protection

Use Scenario: Controlling door lock actuators, interior lighting, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side load switch managing up to -15 A DC loads with fast turn-off for fault isolation.

Use Value: Low R_DS(on) minimizes heat generation during sustained operation; AEC-Q101 ensures long-term reliability in vibration-prone cabin environments.

Use Scenario: Protecting downstream ECUs and sensors from battery misconnection in aftermarket or service scenarios.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery positive and system input to block reverse current flow.

Use Value: -12 V V_DS rating matches nominal vehicle battery; -0.45 V V_GS(th) enables immediate conduction when polarity is correct.

Engine Control Unit (ECU) Power Distribution

LED Headlamp Driver

Use Scenario: Switching 12 V power rails to fuel injectors, ignition coils, and solenoid valves in engine management systems.

IC Role / Device Role / Timing Role: High-side switch with fast switching (t_f = 30 ns typ) to support precise pulse-width modulated actuation.

Use Value: 20 mJ E_AS withstands inductive kickback without external snubbers; 175 °C T_J rating accommodates under-hood ambient up to 125 °C.

Use Scenario: Driving high-brightness LED arrays in adaptive front-lighting systems (AFS) with PWM dimming.

IC Role / Device Role / Timing Role: Low-loss series switch regulating current to LED strings via constant-current feedback loop.

Use Value: 0.016 Ω R_DS(on) limits conduction loss to <2.2 W at 12 A, reducing thermal load on headlamp PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPBF	TO-220 package, -100 V V_DS, 0.3 Ω R_DS(on) @ -10 V - higher voltage, much higher on-resistance, through-hole only	Not suitable for space-constrained automotive PCBs; requires heatsink mounting	Select only if higher voltage rating and legacy through-hole assembly are required
DMT6009LPS-13	SO-8, -60 V V_DS, 0.009 Ω R_DS(on) @ -10 V - higher voltage, lower R_DS(on), but V_GS(th) = -1.0 to -2.5 V	Requires higher gate drive voltage; not optimized for 3.3 V logic control in low-voltage automotive domains	Prefer when higher blocking voltage and lower conduction loss outweigh gate drive compatibility needs

Compared with IRF9530NPBF and DMT6009LPS-13, SQ4005EY-T1_BE3 offers optimal balance of AEC-Q101 compliance, SO-8 surface-mount integration, -12 V rating matched to 12 V systems, and low-threshold gate drive-making it uniquely suited for modern automotive body electronics where board space, thermal density, and logic-level compatibility are critical.

Availability

SQ4005EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive body control modules, reverse polarity protection circuits, and engine control unit power distribution requiring stable component supply across extended production lifecycles.

Supply support for SQ4005EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ4005EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-reliability 12 V vehicle subsystems demanding AEC-Q101 qualification, low R_DS(on), and robust thermal performance.

FAQ

What is the maximum junction temperature rating for SQ4005EY-T1_BE3?

The SQ4005EY-T1_BE3 has a maximum operating junction temperature of +175 °C, fully qualified per AEC-Q101 for under-hood automotive use. This rating is confirmed in the Absolute Maximum Ratings table and supported by thermal characterization data showing normalized R_DS(on) stability up to 175 °C. The device maintains functional integrity across its full -55 °C to +175 °C T_J range, making SQ4005EY-T1_BE3 suitable for high-ambient environments like engine compartments and battery junction boxes.

Is SQ4005EY-T1_BE3 pin-compatible with other SO-8 P-channel MOSFETs?

SQ4005EY-T1_BE3 follows the standard SO-8 (MS-012) pinout: pins 1–4 and 5 are Source, pin 4 is Gate, and pins 6–8 are Drain. While physical pin count and footprint match generic SO-8, direct pin compatibility with other P-channel devices depends on internal terminal mapping - SQ4005EY-T1_BE3 uses multi-pin Source/Drain configuration for thermal and current-handling optimization. Always verify layout alignment using the official Vishay package drawing 71192 before substitution. SQ4005EY-T1_BE3 is not guaranteed as drop-in replacement for non-Vishay SO-8 MOSFETs without circuit validation.

Does SQ4005EY-T1_BE3 require a gate resistor for safe operation?

SQ4005EY-T1_BE3 has a typical gate resistance (R_g) of 2.7 Ω, measured at 1 MHz, but external gate resistors are still recommended to control dV/dt and prevent oscillation during switching. For PWM applications at 20 kHz or higher, a 5–10 Ω series gate resistor optimizes EMI and shoot-through immunity while maintaining t_d(on)/t_f within datasheet specs. The SQ4005EY-T1_BE3 gate charge (Q_g = 29–38 nC) and low V_GS(th) make it compatible with standard microcontroller GPIOs when buffered, but gate resistor selection must account for drive strength and layout parasitics to ensure reliable SQ4005EY-T1_BE3 operation.

What is the avalanche energy rating of SQ4005EY-T1_BE3 and how is it tested?

SQ4005EY-T1_BE3 is rated for 20 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, verified per JEDEC JESD24-11. This rating reflects the device's ability to absorb inductive energy during unclamped inductive switching events - common in automotive solenoid and relay drivers. The test applies a controlled current pulse while monitoring V_DS clamping behavior; SQ4005EY-T1_BE3 passes 100 % UIS (unclamped inductive switching) screening during production. E_AS is not repetitive; repeated avalanche stresses degrade reliability, so SQ4005EY-T1_BE3 should be used with appropriate snubbing or freewheeling paths in highly inductive circuits.

How does the R_DS(on) of SQ4005EY-T1_BE3 vary with temperature and gate voltage?

SQ4005EY-T1_BE3 exhibits positive temperature coefficient for R_DS(on): normalized resistance increases to ~1.5× at 150 °C vs. 25 °C (per Fig. 10), improving current sharing in parallel configurations. At V_GS = -2.5 V, R_DS(on) is 0.018–0.022 Ω (vs. 0.013–0.016 Ω at -4.5 V), enabling partial turn-on with 2.5 V logic. This behavior is documented in the "On-Resistance vs. Junction Temperature" and "On-Resistance vs. Gate-to-Source Voltage" curves. Designers can leverage SQ4005EY-T1_BE3's low V_GS(th) and stable R_DS(on) drift to simplify gate drive and improve thermal predictability in automotive power stages.

SQ4005EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 13.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4005EY-T1_BE3 FAQ

1.How can I place an order for SQ4005EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4005EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4005EY-T1_BE3 reliable?

The price and inventory of SQ4005EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4005EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4005EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4005EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4005EY-T1_BE3?

SQ4005EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4005EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4005EY-T1_BE3?

For technical support, including SQ4005EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4005EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4005EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4005EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4005EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4005EY-T1_BE3?

All SQ4005EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4005EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4005EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4005EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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