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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4005EY-T1_GE3

Name: SQ4005EY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4005EY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4005EY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4005EY-T1_GE3.pdf

Description:: MOSFET P-CHANNEL 12V 15A 8SOIC

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Product details

Overview

SQ4005EY-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -12 V V_DS, 0.016 Ω R_DS(on) at -4.5 V V_GS, and -15 A continuous drain current at T_C = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in 12 V automotive systems.

For engineers reviewing the SQ4005EY-T1_GE3 datasheet, SQ4005EY-T1_GE3 pinout, SQ4005EY-T1_GE3 application, or SQ4005EY-T1_GE3 equivalent, key selection criteria include its low R_DS(on) at logic-level gate drive (-2.5 V), robust avalanche energy rating (20 mJ), and validated 100 % R_g and UIS testing for high-reliability automotive load switching.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance with fast switching performance: typical total gate charge is 29 nC at -4.5 V, with turn-on delay of 19 ns and fall time of 30 ns under standard test conditions. Its SO-8 footprint supports PCB-mount thermal management with R_thJA = 92 °C/W on 1"² FR4 board.

The device integrates a body diode with V_SD = -0.8 V at -10 A and supports pulsed drain currents up to -60 A. It is characterized across -55 °C to +175 °C, with normalized R_DS(on) variation ≤1.5× over full temperature range at V_GS = -4.5 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for 12 V automotive rail protection and reverse polarity circuits
R_DS(on) @ V_GS = -4.5 V	0.016 Ω - Enables <170 mW conduction loss at -13.5 A, critical for thermally constrained modules
I_D (continuous)	-15 A @ T_C = 25 °C - Supports high-current loads such as fuel pumps, HVAC actuators, and lighting drivers
E_AS	20 mJ - Confirmed single-pulse avalanche energy tolerance for inductive load switching without snubbers
T_J max	+175 °C - Qualified for under-hood environments including engine control units and transmission modules
Q_g	29 nC - Enables efficient gate driving with standard automotive logic-level drivers (e.g., TC1412, UCC27517)
V_GS(th)	-0.6 V (typ) - Ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A). Thermal pad on drain terminals enables enhanced heat dissipation through PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally paralleled drain connections - six pins share current path to reduce resistance and improve thermal spreading
5	Gate (G)	Control input - accepts logic-level negative voltage; R_g = 2.7 Ω (typ) limits ringing during fast switching
6	Source (S)	Power return node - tied to system ground or load common; forms source-drain diode anode

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, HTRB, and UHAST - no field failure history reported
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates latent infant mortality
TrenchFET® architecture	Enables 0.013 Ω typ R_DS(on) at -4.5 V while maintaining <3600 pF C_iss - balances conduction and switching losses
Body diode with low V_SD	V_SD = -0.8 V @ -10 A ensures minimal forward drop during freewheeling in H-bridge or buck converter topologies
High-temperature operation	Specified R_DS(on) and switching parameters guaranteed up to +175 °C - avoids derating in compact enclosures

Applications

Engine Control Module (ECM) Load Switching	Automotive Body Control Module (BCM)
Use Scenario: High-side switching of solenoid valves and fuel injectors in gasoline/diesel engine management systems. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with microcontroller-compatible gate drive. Use Value: Low R_DS(on) minimizes self-heating during sustained duty cycles; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.	Use Scenario: Power distribution to door locks, window lift motors, and interior lighting in centralized BCM designs. IC Role / Device Role / Timing Role: Load switch enabling controlled power-up/down sequencing and short-circuit protection. Use Value: 20 mJ E_AS withstands inductive kickback from motor windings; SO-8 footprint allows dense layout in space-constrained modules.
Reverse Polarity Protection	Start-Stop System Battery Management
Use Scenario: Input protection circuit preventing damage from accidental battery terminal reversal in infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery input and downstream DC/DC converters. Use Value: -12 V V_DS rating matches nominal 12 V system; low threshold ensures immediate conduction when polarity is correct.	Use Scenario: Smart battery disconnect in 12 V start-stop systems where load shedding must occur during engine cranking. IC Role / Device Role / Timing Role: High-side switch isolating auxiliary loads during low-voltage cranking events. Use Value: +175 °C rating supports operation near battery terminals; -2.5 V V_GS capability enables direct MCU GPIO control without level shifters.

Engine Control Module (ECM) Load Switching

Automotive Body Control Module (BCM)

Use Scenario: High-side switching of solenoid valves and fuel injectors in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with microcontroller-compatible gate drive.

Use Value: Low R_DS(on) minimizes self-heating during sustained duty cycles; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Use Scenario: Power distribution to door locks, window lift motors, and interior lighting in centralized BCM designs.

IC Role / Device Role / Timing Role: Load switch enabling controlled power-up/down sequencing and short-circuit protection.

Use Value: 20 mJ E_AS withstands inductive kickback from motor windings; SO-8 footprint allows dense layout in space-constrained modules.

Reverse Polarity Protection

Start-Stop System Battery Management

Use Scenario: Input protection circuit preventing damage from accidental battery terminal reversal in infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery input and downstream DC/DC converters.

Use Value: -12 V V_DS rating matches nominal 12 V system; low threshold ensures immediate conduction when polarity is correct.

Use Scenario: Smart battery disconnect in 12 V start-stop systems where load shedding must occur during engine cranking.

IC Role / Device Role / Timing Role: High-side switch isolating auxiliary loads during low-voltage cranking events.

Use Value: +175 °C rating supports operation near battery terminals; -2.5 V V_GS capability enables direct MCU GPIO control without level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 0.022 Ω @ -4.5 V; V_DS = -20 V; not AEC-Q101 qualified	Higher voltage margin but lacks automotive qualification and thermal rating (T_J max = +150 °C)	Acceptable for non-automotive industrial 12 V switching where qualification is not required
DMN3026LFG-7	R_DS(on) = 0.026 Ω @ -4.5 V; SO-8; AEC-Q101 qualified; T_J max = +150 °C	Lower thermal limit and higher on-resistance - less suitable for sustained high-current loads	Valid alternative if board space allows minor efficiency trade-off and ambient temperature remains below 125 °C

Compared with IRF7425PBF and DMN3026LFG-7, SQ4005EY-T1_GE3 delivers superior thermal capability (+175 °C), lower R_DS(on), and verified avalanche robustness - making it the preferred choice for mission-critical automotive power stages where long-term reliability outweighs marginal cost differences.

Availability

SQ4005EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and battery management systems requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SQ4005EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

SQ4005EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-reliability 12 V power switching in harsh-temperature environments like engine compartments and battery junction boxes.

FAQ

What is the maximum continuous drain current rating for SQ4005EY-T1_GE3 at 125 °C case temperature?

The SQ4005EY-T1_GE3 supports -8.7 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under high ambient conditions and must be applied in thermal design calculations for sustained operation in under-hood applications.

Is SQ4005EY-T1_GE3 suitable for reverse polarity protection circuits?

Yes, SQ4005EY-T1_GE3 is commonly used in reverse polarity protection due to its -12 V V_DS rating, low V_GS(th) (-0.6 V typ), and ability to conduct fully with standard 3.3 V or 5 V logic signals. Its AEC-Q101 qualification and +175 °C rating make it especially appropriate for automotive front-end protection.

Does SQ4005EY-T1_GE3 have an integrated ESD protection diode on the gate?

No, the SQ4005EY-T1_GE3 datasheet does not specify integrated gate ESD protection. Gate-source leakage is rated at ±100 nA at ±8 V, and the absolute maximum V_GS is ±8 V - external Zener clamping or series resistance is recommended in high-noise automotive environments to prevent gate oxide damage.

What is the typical gate charge (Q_g) value for SQ4005EY-T1_GE3 and how does it affect switching speed?

The SQ4005EY-T1_GE3 has a typical total gate charge of 29 nC at V_GS = -4.5 V. With a gate resistance of 2.7 Ω (typ), this results in sub-100 ns switching transitions - confirmed by t_d(on) = 19 ns and t_f = 30 ns - enabling efficient operation in PWM-based power control up to several hundred kHz.

Can SQ4005EY-T1_GE3 replace N-channel MOSFETs in high-side switching configurations?

No - SQ4005EY-T1_GE3 is a P-channel device optimized for high-side switching without level-shifting circuitry, unlike N-channel MOSFETs which require gate voltage above the source. Its -4.5 V logic-compatible gate drive simplifies control in 12 V systems, whereas N-channel alternatives would need bootstrap or isolated gate drivers for equivalent functionality.

SQ4005EY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm@ 13.5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4005EY-T1_GE3 FAQ

1.How can I place an order for SQ4005EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4005EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4005EY-T1_GE3 reliable?

The price and inventory of SQ4005EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4005EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4005EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4005EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4005EY-T1_GE3?

SQ4005EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4005EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4005EY-T1_GE3?

For technical support, including SQ4005EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4005EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4005EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4005EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4005EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4005EY-T1_GE3?

All SQ4005EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4005EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4005EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4005EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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