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Vishay Siliconix SQ4050EY-T1_GE3
- Part No.:
- SQ4050EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4050EY-T1_GE3.pdf
- Description:
- MOSFET N-CHANNEL 40V 19A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,731
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Product details
Overview
SQ4050EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 19 A continuous drain current at 25 °C, and 0.0080 Ω RDS(on) at VGS = 10 V in SO-8 package; used as a high-efficiency main switch in 12 V automotive DC/DC converters and body control modules.
For engineers reviewing the SQ4050EY-T1_GE3 datasheet, SQ4050EY-T1_GE3 pinout, SQ4050EY-T1_GE3 application, or SQ4050EY-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, low gate charge (34 nC typical), and robust UIS-tested ruggedness for under-hood switching applications.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in automotive 12 V systems. Its gate threshold voltage (1.5–2.5 V) enables direct drive from standard 3.3 V or 5 V microcontrollers, while the 0.8 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.
The device integrates a built-in body diode with 0.75–1.1 V forward voltage at 3.5 A, supporting synchronous rectification and freewheeling in buck converters and motor drivers. Thermal design is enabled by its 25 °C/W junction-to-foot (RthJF) path, allowing efficient heat transfer to PCB copper planes or heatsinks via the exposed drain pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) @ 10 V | 0.0080 Ω - Enables ≤1.6 W conduction loss at 14 A, reducing thermal stress in compact PCB layouts. |
| ID (continuous) | 19 A @ TC = 25 °C - Supports high-current loads such as solenoid drivers and LED headlamp arrays. |
| Qg (total) | 34 nC typical - Low gate charge minimizes driver power consumption and enables >100 kHz PWM operation. |
| TJ max | +175 °C - Rated for under-hood environments including engine control units and transmission control modules. |
| AEC-Q101 | Qualified - Meets automotive reliability standards for vibration, temperature cycling, and humidity testing. |
| EAS | 58 mJ - Avalanche energy rating ensures robustness against inductive switching surges in motor and relay circuits. |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012) with exposed drain paddle for thermal enhancement; dimensions: 4.9 mm × 3.9 mm × 1.5 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; pins 1–4 are internally bonded together for low-inductance, high-current return path. |
| 5, 6, 7, 8 | Drain (D) | High-current output node; pins 5–8 and exposed paddle form single low-resistance drain terminal for thermal and electrical performance. |
| 4 | Gate (G) | Control input; isolated from power terminals; requires <±20 V gate drive with 0.2–1.2 Ω internal gate resistance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-efficiency switching in space-constrained automotive modules. |
| 100 % UIS tested | Each unit validated for unclamped inductive switching integrity-critical for relay, solenoid, and motor driver reliability. |
| Exposed drain paddle | Enables direct thermal coupling to PCB copper; reduces RthJA to 85 °C/W on 1"² FR4 board for passive cooling. |
| Low VGS(th) range | 1.5–2.5 V threshold allows logic-level drive compatibility with automotive MCUs and gate drivers without level-shifting. |
| 175 °C operation | Extended junction temperature rating supports placement near heat sources (e.g., power inductors, engines) without derating. |
Applications
| Automotive Body Control Module | 12 V DC/DC Converter Primary Switch |
|---|---|
Use Scenario: Controlling door locks, window lifts, and interior lighting via centralized ECU. IC Role / Device Role / Timing Role: High-side or low-side power switch managing 5–15 A resistive/inductive loads. Use Value: AEC-Q101 qualification and 175 °C rating ensure long-term reliability in vehicle cabin environments subject to thermal cycling. |
Use Scenario: Step-down conversion from 12 V battery to 3.3 V/5 V for infotainment and ADAS subsystems. IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch operating at 200–500 kHz PWM frequency. Use Value: Low 0.0080 Ω RDS(on) and 34 nC Qg minimize conduction and switching losses, improving efficiency above 92 % at full load. |
| Engine Management Solenoid Driver | LED Headlamp Current Regulator |
Use Scenario: Driving fuel injectors, EGR valves, and turbocharger actuators in engine control units. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch handling repetitive inductive kickback. Use Value: 58 mJ EAS and 100 % UIS testing guarantee survival during 100,000+ cycles of inductive turn-off stress. |
Use Scenario: Constant-current regulation for high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled current sink in linear or buck-based LED driver topology. Use Value: Low RDS(on) tolerance over temperature (0.0150 Ω max at 175 °C) maintains stable current regulation across ambient extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A peak, TO-263 package; higher current but larger footprint and no AEC-Q101 documentation in public datasheet. | Targeted at high-power traction inverters-not optimized for space-constrained BCM or DC/DC modules. | Choose when board area permits larger package and peak current exceeds 19 A. |
| IRF7470PBF | 40 V, 12 A, SO-8, RDS(on) = 0.012 Ω @ 10 V; not AEC-Q101 qualified; lower thermal rating (150 °C). | Suitable for industrial/commercial power supplies but lacks automotive reliability validation. | Consider only for non-automotive designs where cost is prioritized over qualification and temperature margin. |
Compared with STL220N4F7AG and IRF7470PBF, the SQ4050EY-T1_GE3 uniquely balances AEC-Q101 compliance, SO-8 compactness, 175 °C operation, and sub-10 mΩ RDS(on), making it the preferred choice for thermally demanding automotive power switches where layout space and qualification are critical.
Availability
SQ4050EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC/DC converters, and engine management solenoid drivers requiring stable component supply across extended production lifecycles.
Supply support for SQ4050EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ rugged series-including SQ4050EY-T1_GE3-is engineered specifically for automotive power switching applications demanding AEC-Q101 qualification, high-temperature operation, and robust avalanche performance.
FAQ
What is the maximum continuous drain current rating for SQ4050EY-T1_GE3 at 125 °C case temperature?
The SQ4050EY-T1_GE3 supports 11 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained high-temperature conditions, and must be verified against actual PCB layout and airflow in the final design. The SQ4050EY-T1_GE3 maintains safe operation within this limit when mounted per Vishay's recommended 1"² FR4 footprint.
Does SQ4050EY-T1_GE3 have a built-in body diode, and what is its forward voltage?
Yes, the SQ4050EY-T1_GE3 integrates a parasitic body diode with a forward voltage (VSD) of 0.75–1.1 V at IF = 3.5 A and VGS = 0 V. This diode enables freewheeling in inductive loads and synchronous rectification in buck converters. Its performance is characterized across temperature, with VSD increasing slightly at elevated junction temperatures.
Is SQ4050EY-T1_GE3 suitable for use in high-frequency PWM applications above 200 kHz?
Yes, the SQ4050EY-T1_GE3 is well-suited for high-frequency PWM applications up to 500 kHz due to its low total gate charge (34 nC typical) and fast switching times (td(on) = 16–24 ns, tf = 9.6–14.5 ns). These parameters reduce switching losses and enable efficient operation in compact DC/DC converters-provided gate drive strength and PCB layout minimize parasitic inductance.
What does "T1_GE3" mean in the part number SQ4050EY-T1_GE3?
The suffix "T1_GE3" denotes Vishay's tape-and-reel packaging configuration: "T1" indicates 1000-piece reel quantity, and "GE3" specifies green (halogen-free) molding compound compliant with RoHS and Vishay's material categorization standard (doc# 99912). This marking confirms environmental compliance and logistics readiness for automated SMT assembly.
How is thermal performance affected when SQ4050EY-T1_GE3 is mounted on a standard 2-layer FR4 PCB?
When mounted on a 1"² double-sided FR4 PCB with 2 oz. copper on both sides, the SQ4050EY-T1_GE3 achieves RthJA = 85 °C/W and RthJF = 25 °C/W. Performance improves significantly with additional copper pour, thermal vias under the drain paddle, or heatsink attachment. The SQ4050EY-T1_GE3's exposed drain pad is designed to maximize this thermal path-layout adherence to Vishay's AN826 pad recommendations is essential for achieving rated specs.
SQ4050EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2406 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4050EY-T1_GE3 FAQ
1.How can I place an order for SQ4050EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4050EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4050EY-T1_GE3 reliable?
The price and inventory of SQ4050EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4050EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4050EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4050EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4050EY-T1_GE3?
SQ4050EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4050EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4050EY-T1_GE3?
For technical support, including SQ4050EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4050EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4050EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4050EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4050EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4050EY-T1_GE3?
All SQ4050EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4050EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4050EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4050EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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