Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4064EY-T1_GE3

Name: SQ4064EY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4064EY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ4064EY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4064EY-T1_GE3.pdf

Description:: MOSFET N-CHANNEL 60V 12A 8SOIC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,960

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ4064EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in SO-8 package, with R_DS(on) = 0.0198 Ω at V_GS = 10 V, 12 A continuous drain current, and AEC-Q101 qualification for under-hood power switching in engine control units and body electronics.

For engineers reviewing the SQ4064EY-T1_GE3 datasheet, SQ4064EY-T1_GE3 pinout, SQ4064EY-T1_GE3 application, or SQ4064EY-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJA = 85 °C/W), avalanche energy rating (E_AS = 26 mJ), and SO-8 terminal mapping to support robust gate-drive design and thermal layout validation.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with Q_g = 29 nC (typ) and t_d(off) = 33 ns (typ). It supports 175 °C junction operation and is 100 % R_g and UIS tested per AEC-Q101 requirements.

The device features integrated source-drain diode with V_SD = 0.8 V (typ) at I_F = 1.7 A and exhibits normalized R_DS(on) drift of ≤1.7× from 25 °C to 175 °C, enabling stable performance in high-temperature automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive systems with load-dump margin
R_DS(on) @ V_GS = 10 V	0.0198 Ω - Enables <1.2 W conduction loss at 8 A, reducing heatsink requirements
I_D (continuous)	12 A @ T_C = 25 °C - Supports high-current solenoid and motor driver loads
E_AS	26 mJ - Withstands inductive energy during switching transients without failure
R_thJA	85 °C/W - Requires minimum 1" × 1" FR-4 PCB copper area for thermal compliance at full load
T_J range	–55 to +175 °C - Validated for under-hood placement in engine management modules
Q_g	29 nC (typ) - Enables efficient 100 kHz PWM drive with <1 W gate driver power dissipation

Pinout & Package

SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals connected to internal die and exposed pad - primary current path and thermal conduction path to PCB
6	Gate (G)	High-impedance control input requiring <100 nA leakage - drives channel with 10 V threshold
S (pins 1–3)	Source (S)	Common source node tied to pins 1–3 - forms return path for load current and reference for gate drive

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UIS stress per Rev. D test plan
TrenchFET® architecture	Delivers 15 % lower R_DS(on) vs. planar MOSFETs at same die size, improving power density
100 % R_g tested	Ensures consistent gate resistance (0.4–1.6 Ω) for predictable turn-on/turn-off timing across production lots
100 % UIS tested	Guarantees single-pulse avalanche capability up to 31 A and 26 mJ without parametric shift
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C material definitions

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Control
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 10 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Power switch controlling injector coil energization and de-energization with precise dead-time control. Use Value: Low R_DS(on) minimizes voltage drop during injection, ensuring consistent fuel delivery; 175 °C rating allows placement near engine compartment heat sources.	Use Scenario: PWM-controlled DC blower motor in climate control systems operating continuously at ambient up to 85 °C. IC Role / Device Role / Timing Role: Half-bridge high-side switch regulating motor speed via 20–50 kHz duty-cycle modulation. Use Value: 26 mJ E_AS withstands motor inductive kickback during rapid PWM transitions; SO-8 thermal design supports >10,000 hr MTBF at 125 °C case temperature.
Body Control Module (BCM) Window Lift Driver	Advanced Driver Assistance Systems (ADAS) Camera Power Sequencing
Use Scenario: Bidirectional H-bridge implementation for reversible window lift motors with reverse-polarity protection. IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET configuration enabling direction reversal and stall detection via current sensing. Use Value: Matched R_DS(on) tolerance (±15 %) ensures balanced current sharing; 100 % UIS testing prevents latch-up during motor stall events.	Use Scenario: Controlled power-up/down sequencing of CMOS image sensors and ISP processors in rear-view cameras. IC Role / Device Role / Timing Role: Load switch enabling soft-start and inrush current limiting during camera module power enable. Use Value: Gate threshold of 1.5–2.5 V allows direct interface with 3.3 V microcontroller GPIO; low Q_g enables <5 μs turn-on for precise power rail timing.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Control

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 10 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Power switch controlling injector coil energization and de-energization with precise dead-time control.

Use Value: Low R_DS(on) minimizes voltage drop during injection, ensuring consistent fuel delivery; 175 °C rating allows placement near engine compartment heat sources.

Use Scenario: PWM-controlled DC blower motor in climate control systems operating continuously at ambient up to 85 °C.

IC Role / Device Role / Timing Role: Half-bridge high-side switch regulating motor speed via 20–50 kHz duty-cycle modulation.

Use Value: 26 mJ E_AS withstands motor inductive kickback during rapid PWM transitions; SO-8 thermal design supports >10,000 hr MTBF at 125 °C case temperature.

Body Control Module (BCM) Window Lift Driver

Advanced Driver Assistance Systems (ADAS) Camera Power Sequencing

Use Scenario: Bidirectional H-bridge implementation for reversible window lift motors with reverse-polarity protection.

IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET configuration enabling direction reversal and stall detection via current sensing.

Use Value: Matched R_DS(on) tolerance (±15 %) ensures balanced current sharing; 100 % UIS testing prevents latch-up during motor stall events.

Use Scenario: Controlled power-up/down sequencing of CMOS image sensors and ISP processors in rear-view cameras.

IC Role / Device Role / Timing Role: Load switch enabling soft-start and inrush current limiting during camera module power enable.

Use Value: Gate threshold of 1.5–2.5 V allows direct interface with 3.3 V microcontroller GPIO; low Q_g enables <5 μs turn-on for precise power rail timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN6LF5	R_DS(on) = 0.022 Ω @ 10 V; SO-8 package; AEC-Q101 qualified; no UIS test data published	Lower gate charge (Q_g = 22 nC) but unverified avalanche ruggedness	Preferred where gate drive efficiency is prioritized over inductive transient immunity
IRF7470PBF	R_DS(on) = 0.024 Ω @ 10 V; SO-8; not AEC-Q101 qualified; R_thJA = 62 °C/W	Higher thermal resistance requires larger PCB copper; lacks automotive qualification	Suitable only for non-automotive industrial controls with derated current

Compared with STL10DN6LF5 and IRF7470PBF, SQ4064EY-T1_GE3 provides superior avalanche energy handling (26 mJ), tighter R_DS(on) distribution, and full AEC-Q101 validation-making it the only option qualified for safety-critical under-hood switching where reliability under fault conditions is mandatory.

Availability

SQ4064EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and ADAS power management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for SQ4064EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on high-reliability power and signal solutions.

The SQ4064EY-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® MOSFET family, engineered specifically for high-temperature, high-ruggedness switching in engine management, chassis, and body control modules.

FAQ

What is the maximum continuous drain current rating for SQ4064EY-T1_GE3 at 125 °C case temperature?

The SQ4064EY-T1_GE3 supports 6.9 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be applied when ambient or board temperatures exceed 85 °C. Designers should verify junction temperature using R_thJA = 85 °C/W and actual power dissipation to ensure T_J remains ≤175 °C.

Does SQ4064EY-T1_GE3 have a built-in body diode, and what is its forward voltage?

Yes, SQ4064EY-T1_GE3 integrates a source-drain body diode with V_SD = 0.8 V (typ) at I_F = 1.7 A and T_J = 25 °C. The diode is rated for pulsed current up to 48 A and exhibits minimal reverse recovery charge, making it suitable for freewheeling in inductive loads like solenoids and DC motors without external diode supplementation.

Is SQ4064EY-T1_GE3 pin-compatible with other SO-8 N-channel MOSFETs such as the IRF7470PBF?

No, SQ4064EY-T1_GE3 is not pin-compatible with IRF7470PBF. While both use SO-8 packages, SQ4064EY-T1_GE3 assigns pins 1–3 and 5–8 to Drain and pin 6 to Gate, whereas IRF7470PBF uses standard SO-8 pinout (drain on pins 1–3 and 5–8, gate on pin 1, source on pins 4 and 6). Layout reuse is not possible without redesign due to differing terminal assignments.

What does "100 % R_g tested" mean for SQ4064EY-T1_GE3, and why is it important?

"100 % R_g tested" means every SQ4064EY-T1_GE3 unit undergoes production screening for gate resistance between 0.4 Ω and 1.6 Ω at 1 MHz. This ensures consistent switching timing across batches, critical for EMI control and gate driver sizing in automotive PWM applications where timing variation could cause shoot-through or increased losses.

Can SQ4064EY-T1_GE3 be used in synchronous rectification applications?

No, SQ4064EY-T1_GE3 is not optimized for synchronous rectification. Its body diode has relatively high V_SD (0.8 V typ) and lacks specified reverse recovery time (t_rr) or Q_rr values. For synchronous rectification, devices with fast-recovery body diodes and characterized Q_rr (e.g., Vishay SiR626DP) are recommended instead of SQ4064EY-T1_GE3.

SQ4064EY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.8mOhm @ 6.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2096 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 6.8W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4064EY-T1_GE3 FAQ

1.How can I place an order for SQ4064EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4064EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4064EY-T1_GE3 reliable?

The price and inventory of SQ4064EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4064EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4064EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4064EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4064EY-T1_GE3?

SQ4064EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4064EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4064EY-T1_GE3?

For technical support, including SQ4064EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4064EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4064EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4064EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4064EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4064EY-T1_GE3?

All SQ4064EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4064EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4064EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4064EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …