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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4080EY-T1_BE3

Name: SQ4080EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4080EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4080EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4080EY-T1_BE3.pdf

Description:: N-CHANNEL 150-V (D-S) 175C MOSFE

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Product details

Overview

SQ4080EY-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 150 V V_DS, 0.085 Ω R_DS(on) at 10 V_GS, and 19 A continuous drain current, housed in an SO-8 package and qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.

For engineers reviewing the SQ4080EY-T1_BE3 datasheet, SQ4080EY-T1_BE3 pinout, SQ4080EY-T1_BE3 application, or SQ4080EY-T1_BE3 equivalent, this page delivers verified electrical ratings, thermal resistance values, gate charge metrics, junction temperature limits up to +175 °C, and SO-8 terminal mapping - all critical for high-reliability automotive power design validation.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its 100 % R_g and UIS tested construction ensures robustness against voltage transients and avalanche energy stress (E_AS = 20 mJ).

The device operates across -55 °C to +175 °C junction temperature range with R_thJA = 85 °C/W (PCB mount) and R_thJF = 25 °C/W (junction-to-case), supporting thermally constrained layouts in engine control units and body electronics modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 24 V system bus with ≥2× overvoltage margin for load dump events
R_DS(on) @ 10 V_GS	0.085 Ω - enables ≤1.7 W conduction loss at 10 A, reducing heatsink requirements
I_D Continuous	18 A @ T_C = 25 °C - suitable for medium-power solenoid and pump drivers
Q_g	25 nC typical - balances switching speed and gate drive power in 100–500 kHz converters
T_J Max	+175 °C - certified for under-hood placement without derating in ambient >125 °C environments
E_AS	20 mJ - withstands single-pulse inductive kickback from 0.1 mH loads without failure
V_GS(th)	2.5–4.0 V - compatible with 3.3 V and 5 V microcontroller gate drive with margin

Pinout & Package

SO-8 narrow-body surface-mount package per JEDEC MS-012, 5.0 × 4.0 × 1.75 mm, with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection; pins 1–4 internally bonded to reduce source inductance
5	Gate	Control input; requires <1 μA leakage and 0.4 Ω typical gate resistance
6, 7, 8	Drain	High-side power output; pins 6–8 tied to exposed thermal pad for R_thJF = 25 °C/W

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates need for additional qualification testing
100 % R_g test	Ensures gate resistance ≤1 Ω across production lot - guarantees consistent turn-on timing and EMI behavior
TrenchFET® architecture	Delivers 15 % lower R_DS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs
175 °C operation	Enables direct mounting near heat sources (e.g., ignition coils) without external thermal shielding
UIS tested	Guarantees survival of unclamped inductive switching events up to I_AS = 20 A - critical for relay and valve driver reliability

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: Driving 12 V, 8 A peak fuel injectors in gasoline direct injection systems with PWM frequencies up to 200 Hz. IC Role / Device Role / Timing Role: High-side N-channel switch controlling injector coil current; handles repetitive 20 mJ avalanche pulses during turn-off. Use Value: 0.085 Ω R_DS(on) minimizes I²R heating during extended idle operation; 175 °C rating avoids thermal shutdown in sealed ECU enclosures.	Use Scenario: Controlling brushed DC blower motors in climate control systems with variable-speed PWM (1–20 kHz). IC Role / Device Role / Timing Role: Low-side switching element managing bidirectional current flow and freewheeling diode conduction. Use Value: V_SD = 0.75 V typ. at 3.5 A reduces reverse recovery losses; SO-8 footprint allows compact dual-MOSFET half-bridge layout.
12 V to 5 V Automotive DC-DC Converter	Body Control Module (BCM) Window Lift Driver
Use Scenario: Synchronous rectifier in buck converter supplying 5 V/3 A to infotainment head units from vehicle battery. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 500 kHz with 25 nC Q_g enabling efficient gate drive. Use Value: C_iss = 1100 pF typical ensures stable loop response; R_thJF = 25 °C/W supports direct PCB copper pour cooling.	Use Scenario: Driving reversible 12 V window lift motors requiring bidirectional current and stall protection. IC Role / Device Role / Timing Role: Half-bridge leg component handling 15 A surge currents during motor startup and reversal. Use Value: I_DM = 72 A pulsed rating accommodates 3× stall current; AEC-Q101 compliance ensures 15-year field life in door modules.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: Driving 12 V, 8 A peak fuel injectors in gasoline direct injection systems with PWM frequencies up to 200 Hz.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling injector coil current; handles repetitive 20 mJ avalanche pulses during turn-off.

Use Value: 0.085 Ω R_DS(on) minimizes I²R heating during extended idle operation; 175 °C rating avoids thermal shutdown in sealed ECU enclosures.

Use Scenario: Controlling brushed DC blower motors in climate control systems with variable-speed PWM (1–20 kHz).

IC Role / Device Role / Timing Role: Low-side switching element managing bidirectional current flow and freewheeling diode conduction.

Use Value: V_SD = 0.75 V typ. at 3.5 A reduces reverse recovery losses; SO-8 footprint allows compact dual-MOSFET half-bridge layout.

12 V to 5 V Automotive DC-DC Converter

Body Control Module (BCM) Window Lift Driver

Use Scenario: Synchronous rectifier in buck converter supplying 5 V/3 A to infotainment head units from vehicle battery.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 500 kHz with 25 nC Q_g enabling efficient gate drive.

Use Value: C_iss = 1100 pF typical ensures stable loop response; R_thJF = 25 °C/W supports direct PCB copper pour cooling.

Use Scenario: Driving reversible 12 V window lift motors requiring bidirectional current and stall protection.

IC Role / Device Role / Timing Role: Half-bridge leg component handling 15 A surge currents during motor startup and reversal.

Use Value: I_DM = 72 A pulsed rating accommodates 3× stall current; AEC-Q101 compliance ensures 15-year field life in door modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V V_DS, 2.2 mΩ R_DS(on) @ 10 V_GS, PowerFLAT 5x6 package	Limited to 12 V systems; higher current density but lower voltage margin	Select when board space is constrained and 100 V rating suffices for battery-supplied circuits
IRF3710PBF	100 V V_DS, 0.055 Ω R_DS(on), TO-220 package, non-automotive grade	No AEC-Q101 qualification; lacks UIS and R_g testing; requires heatsink	Acceptable only for non-safety-critical 12 V industrial prototypes without automotive certification needs

Compared with STL220N10F7 and IRF3710PBF, the SQ4080EY-T1_BE3 uniquely combines 150 V rating, AEC-Q101 qualification, and SO-8 thermal performance - making it the only drop-in solution for 24 V commercial vehicle DC-DC and motor control where voltage margin and qualification are mandatory.

Availability

SQ4080EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC actuation, and body electronics applications requiring stable component supply, long-term lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for SQ4080EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive, industrial, and computing markets.

The SQ4080EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-temperature, high-voltage switching in engine bay and chassis-mounted electronic control units.

FAQ

What is the maximum junction temperature rating for SQ4080EY-T1_BE3?

The SQ4080EY-T1_BE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating allows direct placement in high-ambient zones such as near exhaust manifolds or alternators. The device maintains specified R_DS(on) and switching parameters up to this limit, with derating applied only above T_C = 125 °C per the absolute maximum ratings table. SQ4080EY-T1_BE3 must be mounted on FR4 PCB with recommended pad layout to achieve thermal performance.

Is SQ4080EY-T1_BE3 pin-compatible with other SO-8 N-channel MOSFETs?

SQ4080EY-T1_BE3 follows standard SO-8 (MS-012) pinout: pins 1–4 = Source, pin 5 = Gate, pins 6–8 = Drain. While mechanically compatible with generic SO-8 footprints, electrical compatibility depends on R_DS(on), Q_g, and thermal specs - e.g., STP80NF55-08 has different pin assignment and higher capacitance. SQ4080EY-T1_BE3 is not a drop-in replacement for non-AEC-Q101 or non-150 V rated SO-8 MOSFETs without circuit revalidation.

Does SQ4080EY-T1_BE3 include integrated ESD protection?

SQ4080EY-T1_BE3 does not specify integrated ESD protection diodes in its datasheet. It features ±20 V gate-source voltage rating and 100 nA I_GSS leakage, but external gate protection (e.g., Zener clamp) is recommended in high-noise automotive environments. The device passes AEC-Q101 human-body model (HBM) testing as part of qualification, but no on-die ESD structure is documented. SQ4080EY-T1_BE3 relies on system-level protection for ISO 10605 compliance.

What is the typical gate charge value for SQ4080EY-T1_BE3 at 10 V drive?

The typical total gate charge (Q_g) for SQ4080EY-T1_BE3 is 25 nC at V_GS = 10 V, V_DS = 75 V, and I_D = 5 A. This value determines gate driver sizing and switching loss: with a 1 Ω driver, turn-on delay is ~11 ns and rise time ~3.2 ns. Q_gd = 8.7 nC and Q_gs = 5.2 nC are separately specified, enabling Miller-effect analysis. SQ4080EY-T1_BE3 gate charge remains stable across temperature, supporting consistent timing in wide-range automotive operation.

Can SQ4080EY-T1_BE3 be used in synchronous rectification applications?

Yes, SQ4080EY-T1_BE3 is suitable for synchronous rectification in automotive DC-DC converters due to its low 0.085 Ω R_DS(on), 0.75 V typical V_SD, and 500 kHz-capable switching (t_f = 2.5 ns). Its 150 V rating provides margin for 24 V input stages, and AEC-Q101 qualification ensures reliability in safety-critical power supplies. However, external gate timing control is required to prevent shoot-through; SQ4080EY-T1_BE3 does not integrate driver logic or dead-time control.

SQ4080EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1590 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 7.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4080EY-T1_BE3 FAQ

1.How can I place an order for SQ4080EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4080EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4080EY-T1_BE3 reliable?

The price and inventory of SQ4080EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4080EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4080EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4080EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4080EY-T1_BE3?

SQ4080EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4080EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4080EY-T1_BE3?

For technical support, including SQ4080EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4080EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4080EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4080EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4080EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4080EY-T1_BE3?

All SQ4080EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4080EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4080EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4080EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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