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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4153EY-T1_BE3

Name: SQ4153EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4153EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4153EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4153EY-T1_BE3.pdf

Description:: MOSFET P-CHANNEL 12V 25A 8SOIC

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Product details

Overview

SQ4153EY-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -12 V V_DS, 0.00832 Ω R_DS(on) at V_GS = -4.5 V, and -25 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency low-side load switch in 12 V automotive power distribution systems.

For engineers reviewing the SQ4153EY-T1_BE3 datasheet, SQ4153EY-T1_BE3 pinout, SQ4153EY-T1_BE3 application, or SQ4153EY-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, 100% R_g and UIS tested reliability, and SO-8 thermal performance with R_thJA = 85 °C/W on 1" FR4 PCB.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching with Q_g = 101 nC (typ) and t_d(off) = 310 ns (typ) under standard gate drive conditions. Its negative threshold voltage range (-0.4 V to -0.9 V) ensures robust turn-on control in 12 V rail applications with logic-level gate drivers.

The device integrates a body diode with V_SD = -0.8 V (typ) at -10.5 A and supports pulsed avalanche energy up to 18 mJ. Thermal design is enabled by validated R_thJF = 21 °C/W (junction-to-foot), supporting direct heat transfer to copper planes in automotive PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum reverse blocking voltage compatible with 12 V automotive battery systems including load dump transients.
R_DS(on) @ V_GS = -4.5 V	0.00832 Ω - Enables ≤ 3 W conduction loss at -14 A, critical for thermally constrained engine control modules.
I_D (continuous)	-25 A @ T_C = 25 °C - Supports high-current loads such as fuel pumps, radiator fans, and HVAC actuators.
AEC-Q101 qualified	Qualified per stress test requirements for automotive electronics - mandatory for under-hood and safety-critical power switching.
Junction temp. range	-55 °C to +175 °C - Rated for operation in extreme environments including transmission control units and powertrain ECUs.
Q_g (total gate charge)	101 nC (typ) - Determines gate driver power requirement and switching speed; enables <500 ns total transition time with 6 Ω gate resistor.
R_thJA	85 °C/W - Measured on 1" × 1" FR4 PCB; defines thermal derating curve for ambient-limited designs without heatsinks.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement; dimensions per JEDEC MS-012: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source connection; pins 1/2/3/8 internally bonded to minimize source inductance in high-di/dt switching.
4	Gate (G)	Control terminal; requires negative V_GS for turn-on; gate resistance R_g = 2.2 Ω (typ) limits ringing during fast transitions.
5, 6, 7, D-Pad	Drain (D)	Main power output path; drain terminals and exposed pad provide low-inductance, high-current return to ground plane.

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) and high cell density in SO-8 footprint - reduces board area vs. discrete alternatives.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and unclamped inductive switching stress - critical for solenoid and motor drive reliability.
Exposed drain pad	Provides direct thermal path to PCB copper; reduces R_thJA by ~30% compared to standard SO-8 without thermal pad.
Body diode with low V_SD	V_SD = -0.8 V (typ) at -10.5 A - minimizes freewheeling losses in PWM-driven inductive loads like fuel injectors.
High-temperature operation	Rated for continuous operation at T_J = 175 °C - supports placement near hot engine components without derating.

Applications

Engine Control Unit (ECU) Power Switching	Automotive Body Control Module (BCM)
Use Scenario: Switching 12 V power to fuel injectors, ignition coils, and idle air control valves in gasoline engines. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET providing precise, fast-turning power gating synchronized with engine timing signals. Use Value: R_DS(on) ≤ 0.011 Ω at 175 °C ensures <2.5 W conduction loss at full injector current, reducing thermal stress in compact ECU enclosures.	Use Scenario: Controlling door locks, window lift motors, and interior lighting via centralized BCM power distribution. IC Role / Device Role / Timing Role: High-reliability load switch enabling PWM dimming and soft-start sequencing for LED lighting and motor actuation. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation guarantee stable performance across vehicle lifetime and environmental extremes.
Transmission Control Module (TCM)	Electric Power Steering (EPS) Auxiliary Power
Use Scenario: Driving solenoid valves and clutch actuators in automatic and dual-clutch transmissions. IC Role / Device Role / Timing Role: Robust P-channel switch handling repetitive inductive kickback during rapid valve cycling. Use Value: 18 mJ single-pulse avalanche energy rating protects against voltage spikes from 200 mH+ solenoid inductances without external clamping.	Use Scenario: Providing auxiliary 12 V power to EPS motor drivers and torque sensor interfaces during steering assist events. IC Role / Device Role / Timing Role: High-current, low-loss power switch managing peak loads up to 20 A during dynamic steering maneuvers. Use Value: SO-8 thermal pad and R_thJF = 21 °C/W enable direct mounting to thick copper layers, sustaining >15 A continuous without thermal shutdown.

Engine Control Unit (ECU) Power Switching

Automotive Body Control Module (BCM)

Use Scenario: Switching 12 V power to fuel injectors, ignition coils, and idle air control valves in gasoline engines.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET providing precise, fast-turning power gating synchronized with engine timing signals.

Use Value: R_DS(on) ≤ 0.011 Ω at 175 °C ensures <2.5 W conduction loss at full injector current, reducing thermal stress in compact ECU enclosures.

Use Scenario: Controlling door locks, window lift motors, and interior lighting via centralized BCM power distribution.

IC Role / Device Role / Timing Role: High-reliability load switch enabling PWM dimming and soft-start sequencing for LED lighting and motor actuation.

Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation guarantee stable performance across vehicle lifetime and environmental extremes.

Transmission Control Module (TCM)

Electric Power Steering (EPS) Auxiliary Power

Use Scenario: Driving solenoid valves and clutch actuators in automatic and dual-clutch transmissions.

IC Role / Device Role / Timing Role: Robust P-channel switch handling repetitive inductive kickback during rapid valve cycling.

Use Value: 18 mJ single-pulse avalanche energy rating protects against voltage spikes from 200 mH+ solenoid inductances without external clamping.

Use Scenario: Providing auxiliary 12 V power to EPS motor drivers and torque sensor interfaces during steering assist events.

IC Role / Device Role / Timing Role: High-current, low-loss power switch managing peak loads up to 20 A during dynamic steering maneuvers.

Use Value: SO-8 thermal pad and R_thJF = 21 °C/W enable direct mounting to thick copper layers, sustaining >15 A continuous without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS	N-channel, 40 V, R_DS(on) = 1.4 mΩ @ V_GS = 10 V - requires high-side driver or level-shifting circuitry.	Not suitable for simple low-side switch topology; adds complexity in space-constrained automotive modules.	Select only if system already uses N-channel gate drivers and layout allows bootstrap or isolated supply.
ON Semiconductor NTMFS4C09NT1G	P-channel, 20 V, R_DS(on) = 9.5 mΩ @ V_GS = -4.5 V, but rated only to 150 °C junction temperature.	Lacks 175 °C rating - unsuitable for under-hood applications exceeding 150 °C ambient or high-power dissipation.	Acceptable for cabin-mounted modules (e.g., infotainment power rails) where thermal margin is sufficient.

Compared with BSC014N04LS and NTMFS4C09NT1G, SQ4153EY-T1_BE3 uniquely combines -12 V rating, 175 °C operation, and SO-8 thermal pad in a drop-in-compatible P-channel solution-eliminating driver complexity while meeting stringent under-hood thermal and reliability requirements.

Availability

SQ4153EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ4153EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4153EY-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for reliable 12 V load switching in harsh-temperature, high-vibration automotive environments.

FAQ

What is the maximum continuous drain current for SQ4153EY-T1_BE3 at 125 °C case temperature?

The SQ4153EY-T1_BE3 supports -14 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the SO-8 package under high-temperature operating conditions and must be applied when designing for sustained high-power loads in under-hood applications.

Is SQ4153EY-T1_BE3 suitable for use in AEC-Q101-compliant automotive modules?

Yes, SQ4153EY-T1_BE3 is explicitly AEC-Q101 qualified per the Vishay datasheet S21-0375-Rev. C. It has undergone full stress testing including HTGB, HTRB, uHAST, and temperature cycling, making it suitable for safety-critical automotive applications such as engine control, transmission control, and EPS subsystems.

What is the typical gate charge (Q_g) of SQ4153EY-T1_BE3 and how does it affect switching performance?

The SQ4153EY-T1_BE3 has a typical total gate charge Q_g of 101 nC at V_GS = -4.5 V. This value directly determines gate driver sizing and switching speed: with a 6 Ω gate resistor, the device achieves t_d(off) ≈ 310 ns and t_f ≈ 283 ns, enabling efficient PWM operation up to 100 kHz in automotive power stages.

Does SQ4153EY-T1_BE3 include an integrated body diode, and what is its forward voltage?

Yes, SQ4153EY-T1_BE3 incorporates a monolithic body diode with typical forward voltage V_SD = -0.8 V at -10.5 A and T_J = 25 °C. This diode supports freewheeling current in inductive loads such as solenoids and motors, and its low V_SD minimizes conduction loss during PWM off-time.

What is the thermal resistance from junction to ambient (R_thJA) for SQ4153EY-T1_BE3 under standard PCB conditions?

The SQ4153EY-T1_BE3 has a measured R_thJA of 85 °C/W when mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. This value is critical for thermal design calculations and confirms the device's suitability for convection-cooled automotive modules without additional heatsinking.

SQ4153EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 8.32mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 151 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 11000 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 7.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4153EY-T1_BE3 FAQ

1.How can I place an order for SQ4153EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4153EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4153EY-T1_BE3 reliable?

The price and inventory of SQ4153EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4153EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4153EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4153EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4153EY-T1_BE3?

SQ4153EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4153EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4153EY-T1_BE3?

For technical support, including SQ4153EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4153EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4153EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4153EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4153EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4153EY-T1_BE3?

All SQ4153EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4153EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4153EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4153EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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