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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4182EY-T1_BE3

Name: SQ4182EY-T1_BE3
Brand: Vishay Siliconix
SKU: SQ4182EY-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4182EY-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4182EY-T1_BE3.pdf

Description:: MOSFET N-CHANNEL 30V 32A 8SOIC

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Product details

Overview

SQ4182EY-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in SO-8 package, rated for continuous drain current of 32 A at 25 °C and 18 A at 125 °C, with R_DS(on) = 3.8 mΩ at V_GS = 10 V and 5.0 mΩ at V_GS = 4.5 V, qualified to AEC-Q101 and rated for operation up to +175 °C junction temperature - used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQ4182EY-T1_BE3 datasheet, SQ4182EY-T1_BE3 pinout, SQ4182EY-T1_BE3 application, or SQ4182EY-T1_BE3 equivalent, key selection criteria include its 30 V V_DS, low gate charge (72 nC typ), 100 % UIS-tested ruggedness, thermal resistance R_thJA = 80 °C/W on 1"² FR4 PCB, and SO-8 footprint compatibility with standard automotive power switching layouts.

Technical Context

This MOSFET employs TrenchFET® technology to achieve low R_DS(on) and fast switching with Q_g = 72 nC (typ) and t_d(on)/t_r/t_d(off)/t_f = 16 ns / 10 ns / 57 ns / 8 ns under 15 V drive. It features a robust body diode with V_SD = 0.75 V (typ) at I_F = 10 A and is fully characterized for unclamped inductive switching (UIS) and avalanche energy (E_AS = 180 mJ).

The device operates across -55 °C to +175 °C junction temperature range, supports ±20 V gate drive, and is validated for automotive applications requiring high reliability under transient overvoltage, thermal cycling, and high-current pulse stress per AEC-Q101 requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage; defines use in 24 V automotive systems with margin for load dump transients.
R_DS(on) @ V_GS = 10 V	3.8 mΩ max - enables <1 W conduction loss at 18 A, critical for thermally constrained engine bay modules.
R_DS(on) @ V_GS = 4.5 V	5.0 mΩ max - ensures stable on-state performance with 5 V logic-level gate drivers in modern microcontroller-based controls.
I_D (continuous, T_C = 25 °C)	32 A - supports high-current loads such as fuel pump drivers or solenoid actuators without external heatsinking.
Q_g (total gate charge)	72 nC typ - reduces gate drive power and switching losses in high-frequency (>100 kHz) DC-DC phases.
T_J operating range	-55 °C to +175 °C - meets under-hood thermal requirements for transmission control units and battery disconnect switches.
E_AS	180 mJ - withstands repetitive inductive kickback in motor commutation without failure, verified per AEC-Q101.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation; 100 % R_g and UIS tested; lead (Pb)-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed copper pad - primary current path and thermal conduction path to PCB ground plane.
5	Gate (G)	Control terminal; requires <20 V absolute max rating; low input capacitance (C_iss = 4313 pF typ) eases driver selection.
6	Source (S)	Power return node; tied to system ground or low-side shunt; forms reference for gate drive and current sensing.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and UIS - eliminates need for additional qualification testing in Tier-1 designs.
TrenchFET® architecture	Delivers lowest R_DS(on) × Q_g figure-of-merit in SO-8 package - improves efficiency in space-constrained 12/24 V power stages.
100 % UIS tested	Each unit screened for unclamped inductive switching robustness - guarantees reliability in motor and solenoid drive applications.
Exposed drain thermal pad	Enables R_thJF = 21 °C/W to PCB foot - allows >2× power handling vs. non-exposed SO-8 equivalents at same board area.
Low threshold voltage	V_GS(th) = 1.5–2.5 V - ensures turn-on with 3.3 V or 5 V MCU GPIOs without level-shifting circuitry.

Applications

Fuel Pump Driver	Transmission Solenoid Control
Use Scenario: High-reliability 12 V/24 V brushed DC fuel pump actuation in gasoline/diesel engines, subject to vibration, thermal cycling, and load dump transients. IC Role / Device Role / Timing Role: Low-side switch controlling pump current; handles pulsed 20–30 A loads with fast turn-off to prevent back-EMF damage. Use Value: 175 °C rating and 100 % UIS testing ensure uninterrupted operation during cold cranking and hot soak conditions.	Use Scenario: Precision PWM-controlled hydraulic solenoids in automatic transmission valve bodies, requiring accurate current regulation and fault tolerance. IC Role / Device Role / Timing Role: High-side or low-side current switch; supports 1–20 kHz PWM with minimal switching loss due to low Q_g and R_DS(on). Use Value: 4.5 V R_DS(on) spec ensures full enhancement with 5 V microcontroller outputs, eliminating gate driver ICs.
Engine Cooling Fan Controller	Battery Disconnect Switch
Use Scenario: Variable-speed radiator fan drive in ICE vehicles, operating continuously at elevated ambient temperatures near exhaust manifolds. IC Role / Device Role / Timing Role: Main power switch in half-bridge or single-ended topology; conducts up to 25 A continuous with thermal derating. Use Value: R_thJA = 80 °C/W on standard 1"² PCB enables fan control without heatsink - reducing BOM cost and assembly complexity.	Use Scenario: High-current isolation between 12 V battery and vehicle ECU during sleep mode or fault conditions, requiring ultra-low leakage and high surge tolerance. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactors; blocks reverse current and handles 100 A pulsed short-circuit events. Use Value: I_AS = 60 A and E_AS = 180 mJ allow safe interruption of battery faults without fuse coordination delays.

Fuel Pump Driver

Transmission Solenoid Control

Use Scenario: High-reliability 12 V/24 V brushed DC fuel pump actuation in gasoline/diesel engines, subject to vibration, thermal cycling, and load dump transients.

IC Role / Device Role / Timing Role: Low-side switch controlling pump current; handles pulsed 20–30 A loads with fast turn-off to prevent back-EMF damage.

Use Value: 175 °C rating and 100 % UIS testing ensure uninterrupted operation during cold cranking and hot soak conditions.

Use Scenario: Precision PWM-controlled hydraulic solenoids in automatic transmission valve bodies, requiring accurate current regulation and fault tolerance.

IC Role / Device Role / Timing Role: High-side or low-side current switch; supports 1–20 kHz PWM with minimal switching loss due to low Q_g and R_DS(on).

Use Value: 4.5 V R_DS(on) spec ensures full enhancement with 5 V microcontroller outputs, eliminating gate driver ICs.

Engine Cooling Fan Controller

Battery Disconnect Switch

Use Scenario: Variable-speed radiator fan drive in ICE vehicles, operating continuously at elevated ambient temperatures near exhaust manifolds.

IC Role / Device Role / Timing Role: Main power switch in half-bridge or single-ended topology; conducts up to 25 A continuous with thermal derating.

Use Value: R_thJA = 80 °C/W on standard 1"² PCB enables fan control without heatsink - reducing BOM cost and assembly complexity.

Use Scenario: High-current isolation between 12 V battery and vehicle ECU during sleep mode or fault conditions, requiring ultra-low leakage and high surge tolerance.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactors; blocks reverse current and handles 100 A pulsed short-circuit events.

Use Value: I_AS = 60 A and E_AS = 180 mJ allow safe interruption of battery faults without fuse coordination delays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V; SO-8; not AEC-Q101 qualified; higher Q_g = 91 nC	Limited to industrial/commercial use; lacks automotive stress validation and high-temp endurance data	Acceptable for non-automotive 24 V power supplies where AEC-Q101 is not mandated
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V; PowerFLAT 5x6; AEC-Q101; lower R_DS(on) but larger footprint and different pinout	Requires PCB redesign; better thermal performance but incompatible with SO-8 layout	Preferred for new designs targeting lower conduction loss, provided layout flexibility exists

Compared with IRF7470PBF, SQ4182EY-T1_BE3 offers guaranteed automotive qualification and lower gate charge; versus STL220N3LLH6, it retains SO-8 compatibility and simplifies drop-in upgrades in legacy engine control modules despite slightly higher R_DS(on).

Availability

SQ4182EY-T1_BE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine management systems, and battery protection circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ4182EY-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4182EY-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for under-hood power switching applications demanding AEC-Q101 compliance, high-temperature operation, and ruggedized UIS performance.

FAQ

What is the maximum junction temperature rating for SQ4182EY-T1_BE3?

The SQ4182EY-T1_BE3 is rated for continuous operation from -55 °C to +175 °C junction temperature, meeting AEC-Q101 requirements for under-hood automotive environments. This rating is validated through high-temperature reverse bias (HTRB) and temperature cycling tests, and applies to all operating conditions specified in the datasheet - including continuous conduction and pulsed avalanche events.

Is SQ4182EY-T1_BE3 compatible with 5 V gate drive logic?

Yes, SQ4182EY-T1_BE3 is fully compatible with 5 V gate drive logic: its gate threshold voltage V_GS(th) is 1.5–2.5 V, and R_DS(on) is specified at 4.5 V (5.0 mΩ max). At 5 V V_GS, the device achieves near-minimum on-resistance and supports reliable switching in microcontroller-driven applications without external level shifters.

Does SQ4182EY-T1_BE3 have an integrated body diode, and what is its forward voltage?

Yes, SQ4182EY-T1_BE3 includes a monolithic body diode with V_SD = 0.75 V (typ) at I_F = 10 A and V_GS = 0 V. The diode is rated for pulsed source current I_SM = 100 A and is characterized for reverse recovery behavior - making it suitable for freewheeling in inductive loads like solenoids and motors.

What thermal resistance values apply to SQ4182EY-T1_BE3 on a standard PCB?

When mounted on a 1" square FR4 PCB (2 oz copper, double-sided), SQ4182EY-T1_BE3 has R_thJA = 80 °C/W and R_thJF = 21 °C/W. These values are measured per JEDEC JESD51-2 and JESD51-14 standards and assume full soldering of the exposed drain pad to the PCB ground plane - critical for achieving rated power dissipation.

Is SQ4182EY-T1_BE3 RoHS and halogen-free compliant?

Yes, SQ4182EY-T1_BE3 is lead (Pb)-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-BE3" suffix explicitly denotes this compliance, and the device carries appropriate marking per JEDEC standards for traceability and regulatory documentation.

SQ4182EY-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 7.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4182EY-T1_BE3 FAQ

1.How can I place an order for SQ4182EY-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4182EY-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4182EY-T1_BE3 reliable?

The price and inventory of SQ4182EY-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4182EY-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ4182EY-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4182EY-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4182EY-T1_BE3?

SQ4182EY-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4182EY-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4182EY-T1_BE3?

For technical support, including SQ4182EY-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4182EY-T1_BE3 requirements.

6.How does Aetrix verify that SQ4182EY-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ4182EY-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4182EY-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ4182EY-T1_BE3?

All SQ4182EY-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4182EY-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4182EY-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ4182EY-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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