Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix SQ4184EY-T1_GE3

Part No.:
SQ4184EY-T1_GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSQ4184EY-T1_GE3.pdf
Description:
MOSFET N-CH 40V 29A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,533

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SQ4184EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V VDS, 29 A continuous drain current at 25 °C, and RDS(on) of 4.6 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQ4184EY-T1_GE3 datasheet, SQ4184EY-T1_GE3 pinout, SQ4184EY-T1_GE3 application, or SQ4184EY-T1_GE3 equivalent, key selection criteria include its 100 % Rg and UIS tested reliability, SO-8 package thermal performance (RthJF = 21 °C/W), and verified 175 °C operation in automotive power stages.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard 3.3 V and 5 V logic controllers, while the 72 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz.

The device integrates a source-drain diode with 0.75–1.2 V forward voltage at 6 A, enabling synchronous rectification and freewheeling in half-bridge topologies. Thermal design is supported by validated junction-to-foot resistance (21 °C/W) and SO-8 PCB-mount RthJA of 80 °C/W on 1"² FR4.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V/24 V automotive bus protection and load switching
RDS(on) @ 10 V4.6 mΩ - Enables ≤ 1.5 W conduction loss at 18 A DC, critical for thermally constrained engine control modules
ID (continuous)29 A @ TC = 25 °C - Supports high-current solenoid drivers and HVAC blower motors without forced cooling
TJ max+175 °C - Validated operation in under-hood environments exceeding 125 °C ambient
Qg72 nC typical - Allows efficient gate driving with <1 W driver power at 100 kHz PWM in DC-DC converters
VGS(th)1.5–2.5 V - Ensures reliable turn-on with automotive microcontroller GPIOs and level-shifted gate drivers
Ciss4319 pF typical - Predictable input capacitance for stable gate loop design and EMI filtering

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 7, 8Drain (D)Internally connected to exposed thermal pad - primary current path and heat sink interface
6Gate (G)Control terminal requiring <72 nC charge for full enhancement; sensitive to ESD (±20 V rating)
Sources (S)Source (S)Pins 1–3 are source terminals - used for Kelvin sensing or low-inductance return paths in high-di/dt applications

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive use including temperature cycling, HTRB, and UHAST - eliminates requalification effort for Tier 1 designs
100 % Rg testingGuarantees gate resistance ≤ 3.9 Ω - ensures consistent switching speed and reduces risk of oscillation in parallel configurations
100 % UIS testingEach unit withstands single-pulse avalanche energy of 125 mJ - protects against inductive load turn-off transients in motor drives
TrenchFET® architectureDelivers 22 % lower RDS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs
175 °C rated junctionEnables operation in proximity to exhaust manifolds or turbochargers without derating - extends system-level thermal margin

Applications

Engine Control Unit (ECU) Fuel Injector DriverAutomotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 25 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization and demagnetization via controlled diode conduction.

Use Value: 4.6 mΩ RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating prevents thermal shutdown during sustained high-load operation.

Use Scenario: PWM-controlled 24 V blower motor in premium HVAC systems requiring variable speed and reverse polarity capability.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, handling bidirectional current with integrated body diode recovery.

Use Value: 0.75–1.2 V VSD at 6 A enables efficient freewheeling; SO-8 thermal pad dissipates >2 W without heatsink in compact dash-mounted modules.

12 V Battery Disconnect SwitchStart-Stop System Solenoid Driver

Use Scenario: Solid-state replacement for mechanical relays in battery management systems, switching up to 30 A continuously during vehicle cranking and coast-down.

IC Role / Device Role / Timing Role: Main isolation switch between starter battery and auxiliary loads, activated only during ignition or fault conditions.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 40 V VDS provides 2× margin against load-dump transients (ISO 7637-2 Pulse 5a).

Use Scenario: Driving high-inertia solenoids in 48 V mild-hybrid start-stop systems, where rapid engagement (<50 ms) and hold current stability are critical.

IC Role / Device Role / Timing Role: Power stage switch delivering 20 A pulses with <25 ns fall time to minimize solenoid release delay.

Use Value: 15–25 ns turn-off delay and 15–25 ns fall time enable precise timing control; 84 A pulsed rating handles inrush surges without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AG40 V, 220 A pulsed, RDS(on) = 1.7 mΩ @ 10 V - larger die, higher current, different package (PowerFLAT 5x6)Targeted at high-power inverters; not SO-8 drop-in; requires PCB redesign and thermal analysisSelect when >100 A pulsed capability is required and board space allows larger footprint
IRF7470PBF40 V, 14 A continuous, RDS(on) = 8.5 mΩ @ 10 V - older planar process, no AEC-Q101 certificationLegacy industrial use only; unsuitable for automotive due to missing stress test validation and 150 °C TJ limitAccept only for non-automotive prototypes where cost outweighs qualification requirements

Compared with STL220N4F7AG and IRF7470PBF, the SQ4184EY-T1_GE3 delivers optimal balance of SO-8 compatibility, 29 A continuous rating, AEC-Q101 compliance, and 4.6 mΩ conduction loss - making it the preferred choice for space-constrained, thermally demanding automotive power stages where qualification and reliability are mandatory.

Availability

SQ4184EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC motor drives, and battery management systems requiring stable component supply across long production lifecycles.

Supply support for SQ4184EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4184EY-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine compartments, transmission controls, and ADAS power domains.

FAQ

What is the maximum continuous drain current rating for SQ4184EY-T1_GE3 at 125 °C case temperature?

The SQ4184EY-T1_GE3 supports 16.9 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be applied in thermal simulations using RthJF = 21 °C/W to ensure junction temperature remains ≤175 °C under actual operating conditions. The SQ4184EY-T1_GE3 maintains full functionality across this range without parameter shift.

Is SQ4184EY-T1_GE3 suitable for synchronous rectification in a 40 V automotive DC-DC converter?

Yes, the SQ4184EY-T1_GE3 is suitable for synchronous rectification due to its low 4.6 mΩ RDS(on) and integrated source-drain diode with 0.75–1.2 V forward voltage at 6 A. Its 72 nC Qg enables efficient gate drive at typical converter switching frequencies, and AEC-Q101 qualification ensures reliability in automotive power conversion. The SQ4184EY-T1_GE3 has been validated in 12 V–48 V bidirectional DC-DC reference designs by Vishay.

Does SQ4184EY-T1_GE3 require external gate resistors for stable switching in high-di/dt applications?

While the SQ4184EY-T1_GE3 can operate without external gate resistors, Vishay recommends a 5–10 Ω series resistor for EMI control and ringing suppression in high-di/dt circuits (e.g., motor drives). Its measured gate resistance is 0.8–3.9 Ω, and adding external resistance improves controllability of dV/dt and reduces shoot-through risk in half-bridge configurations. The SQ4184EY-T1_GE3 datasheet includes layout guidelines confirming this practice.

What is the avalanche energy rating of SQ4184EY-T1_GE3, and how is it validated?

The SQ4184EY-T1_GE3 is rated for 125 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC JESD24-1. Each unit undergoes 100 % Unclamped Inductive Switching (UIS) screening at production - ensuring every SQ4184EY-T1_GE3 survives worst-case inductive turn-off events in automotive solenoid and motor circuits without parametric shift or failure.

How does the thermal performance of SQ4184EY-T1_GE3 compare between PCB mount and heatsink mounting?

The SQ4184EY-T1_GE3 specifies RthJA = 80 °C/W for 1"² FR4 PCB mount and RthJF = 21 °C/W to the exposed drain pad. When mounted to a copper heatsink via the drain pad, thermal resistance drops significantly - enabling >5 W continuous dissipation. PCB-only designs must limit power to ~2.3 W at 125 °C case temperature. The SQ4184EY-T1_GE3 thermal model supports both configurations, with footnotes in the datasheet confirming RthJF is independent of operating temperature.

SQ4184EY-T1_GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5400 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
7.1W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

SQ4184EY-T1_GE3 FAQ

1.How can I place an order for SQ4184EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4184EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4184EY-T1_GE3 reliable?

The price and inventory of SQ4184EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4184EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4184EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4184EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4184EY-T1_GE3?

SQ4184EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4184EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4184EY-T1_GE3?

For technical support, including SQ4184EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4184EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4184EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4184EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4184EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4184EY-T1_GE3?

All SQ4184EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4184EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4184EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4184EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SQ4184EY-T1_GE3 Tags

  • SQ4184EY-T1_GE3
  • SQ4184EY-T1_GE3 PDF
  • SQ4184EY-T1_GE3 Datasheet
  • SQ4184EY-T1_GE3 Specifications
  • SQ4184EY-T1_GE3 Images
  • Vishay Siliconix
  • Vishay Siliconix SQ4184EY-T1_GE3
  • Buy SQ4184EY-T1_GE3
  • SQ4184EY-T1_GE3 Price
  • SQ4184EY-T1_GE3 Distributor
  • SQ4184EY-T1_GE3 Supplier
  • SQ4184EY-T1_GE3 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER