Vishay Siliconix SQ4184EY-T1_GE3
- Part No.:
- SQ4184EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4184EY-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 29A 8SOIC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SQ4184EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V VDS, 29 A continuous drain current at 25 °C, and RDS(on) of 4.6 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQ4184EY-T1_GE3 datasheet, SQ4184EY-T1_GE3 pinout, SQ4184EY-T1_GE3 application, or SQ4184EY-T1_GE3 equivalent, key selection criteria include its 100 % Rg and UIS tested reliability, SO-8 package thermal performance (RthJF = 21 °C/W), and verified 175 °C operation in automotive power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with standard 3.3 V and 5 V logic controllers, while the 72 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz.
The device integrates a source-drain diode with 0.75–1.2 V forward voltage at 6 A, enabling synchronous rectification and freewheeling in half-bridge topologies. Thermal design is supported by validated junction-to-foot resistance (21 °C/W) and SO-8 PCB-mount RthJA of 80 °C/W on 1"² FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive bus protection and load switching |
| RDS(on) @ 10 V | 4.6 mΩ - Enables ≤ 1.5 W conduction loss at 18 A DC, critical for thermally constrained engine control modules |
| ID (continuous) | 29 A @ TC = 25 °C - Supports high-current solenoid drivers and HVAC blower motors without forced cooling |
| TJ max | +175 °C - Validated operation in under-hood environments exceeding 125 °C ambient |
| Qg | 72 nC typical - Allows efficient gate driving with <1 W driver power at 100 kHz PWM in DC-DC converters |
| VGS(th) | 1.5–2.5 V - Ensures reliable turn-on with automotive microcontroller GPIOs and level-shifted gate drivers |
| Ciss | 4319 pF typical - Predictable input capacitance for stable gate loop design and EMI filtering |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to exposed thermal pad - primary current path and heat sink interface |
| 6 | Gate (G) | Control terminal requiring <72 nC charge for full enhancement; sensitive to ESD (±20 V rating) |
| Sources (S) | Source (S) | Pins 1–3 are source terminals - used for Kelvin sensing or low-inductance return paths in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates requalification effort for Tier 1 designs |
| 100 % Rg testing | Guarantees gate resistance ≤ 3.9 Ω - ensures consistent switching speed and reduces risk of oscillation in parallel configurations |
| 100 % UIS testing | Each unit withstands single-pulse avalanche energy of 125 mJ - protects against inductive load turn-off transients in motor drives |
| TrenchFET® architecture | Delivers 22 % lower RDS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs |
| 175 °C rated junction | Enables operation in proximity to exhaust manifolds or turbochargers without derating - extends system-level thermal margin |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 25 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization and demagnetization via controlled diode conduction. Use Value: 4.6 mΩ RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating prevents thermal shutdown during sustained high-load operation. | Use Scenario: PWM-controlled 24 V blower motor in premium HVAC systems requiring variable speed and reverse polarity capability. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, handling bidirectional current with integrated body diode recovery. Use Value: 0.75–1.2 V VSD at 6 A enables efficient freewheeling; SO-8 thermal pad dissipates >2 W without heatsink in compact dash-mounted modules. |
| 12 V Battery Disconnect Switch | Start-Stop System Solenoid Driver |
Use Scenario: Solid-state replacement for mechanical relays in battery management systems, switching up to 30 A continuously during vehicle cranking and coast-down. IC Role / Device Role / Timing Role: Main isolation switch between starter battery and auxiliary loads, activated only during ignition or fault conditions. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 40 V VDS provides 2× margin against load-dump transients (ISO 7637-2 Pulse 5a). | Use Scenario: Driving high-inertia solenoids in 48 V mild-hybrid start-stop systems, where rapid engagement (<50 ms) and hold current stability are critical. IC Role / Device Role / Timing Role: Power stage switch delivering 20 A pulses with <25 ns fall time to minimize solenoid release delay. Use Value: 15–25 ns turn-off delay and 15–25 ns fall time enable precise timing control; 84 A pulsed rating handles inrush surges without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A pulsed, RDS(on) = 1.7 mΩ @ 10 V - larger die, higher current, different package (PowerFLAT 5x6) | Targeted at high-power inverters; not SO-8 drop-in; requires PCB redesign and thermal analysis | Select when >100 A pulsed capability is required and board space allows larger footprint |
| IRF7470PBF | 40 V, 14 A continuous, RDS(on) = 8.5 mΩ @ 10 V - older planar process, no AEC-Q101 certification | Legacy industrial use only; unsuitable for automotive due to missing stress test validation and 150 °C TJ limit | Accept only for non-automotive prototypes where cost outweighs qualification requirements |
Compared with STL220N4F7AG and IRF7470PBF, the SQ4184EY-T1_GE3 delivers optimal balance of SO-8 compatibility, 29 A continuous rating, AEC-Q101 compliance, and 4.6 mΩ conduction loss - making it the preferred choice for space-constrained, thermally demanding automotive power stages where qualification and reliability are mandatory.
Availability
SQ4184EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC motor drives, and battery management systems requiring stable component supply across long production lifecycles.
Supply support for SQ4184EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4184EY-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine compartments, transmission controls, and ADAS power domains.
FAQ
What is the maximum continuous drain current rating for SQ4184EY-T1_GE3 at 125 °C case temperature?
The SQ4184EY-T1_GE3 supports 16.9 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and must be applied in thermal simulations using RthJF = 21 °C/W to ensure junction temperature remains ≤175 °C under actual operating conditions. The SQ4184EY-T1_GE3 maintains full functionality across this range without parameter shift.
Is SQ4184EY-T1_GE3 suitable for synchronous rectification in a 40 V automotive DC-DC converter?
Yes, the SQ4184EY-T1_GE3 is suitable for synchronous rectification due to its low 4.6 mΩ RDS(on) and integrated source-drain diode with 0.75–1.2 V forward voltage at 6 A. Its 72 nC Qg enables efficient gate drive at typical converter switching frequencies, and AEC-Q101 qualification ensures reliability in automotive power conversion. The SQ4184EY-T1_GE3 has been validated in 12 V–48 V bidirectional DC-DC reference designs by Vishay.
Does SQ4184EY-T1_GE3 require external gate resistors for stable switching in high-di/dt applications?
While the SQ4184EY-T1_GE3 can operate without external gate resistors, Vishay recommends a 5–10 Ω series resistor for EMI control and ringing suppression in high-di/dt circuits (e.g., motor drives). Its measured gate resistance is 0.8–3.9 Ω, and adding external resistance improves controllability of dV/dt and reduces shoot-through risk in half-bridge configurations. The SQ4184EY-T1_GE3 datasheet includes layout guidelines confirming this practice.
What is the avalanche energy rating of SQ4184EY-T1_GE3, and how is it validated?
The SQ4184EY-T1_GE3 is rated for 125 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC JESD24-1. Each unit undergoes 100 % Unclamped Inductive Switching (UIS) screening at production - ensuring every SQ4184EY-T1_GE3 survives worst-case inductive turn-off events in automotive solenoid and motor circuits without parametric shift or failure.
How does the thermal performance of SQ4184EY-T1_GE3 compare between PCB mount and heatsink mounting?
The SQ4184EY-T1_GE3 specifies RthJA = 80 °C/W for 1"² FR4 PCB mount and RthJF = 21 °C/W to the exposed drain pad. When mounted to a copper heatsink via the drain pad, thermal resistance drops significantly - enabling >5 W continuous dissipation. PCB-only designs must limit power to ~2.3 W at 125 °C case temperature. The SQ4184EY-T1_GE3 thermal model supports both configurations, with footnotes in the datasheet confirming RthJF is independent of operating temperature.
SQ4184EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.6mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5400 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.1W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4184EY-T1_GE3 FAQ
1.How can I place an order for SQ4184EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4184EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4184EY-T1_GE3 reliable?
The price and inventory of SQ4184EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4184EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4184EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4184EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4184EY-T1_GE3?
SQ4184EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4184EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4184EY-T1_GE3?
For technical support, including SQ4184EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4184EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4184EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4184EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4184EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4184EY-T1_GE3?
All SQ4184EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4184EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4184EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4184EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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